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1. 发明申请

US20060092694A1 Phase change memory device and method of operating the same 有权
标题翻译：相变存储器件及其操作方法
公开(公告)号：US20060092694A1
公开(公告)日：2006-05-04
申请号：US11193413
申请日：2005-08-01
申请人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
发明人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
IPC分类号： G11C11/00
CPC分类号： G11C8/08 , G11C13/0004 , G11C13/0028 , G11C13/0069 , G11C2013/008
摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.
摘要翻译：提供了一种相变存储器件及其操作方法。相变存储装置可以包括以行和列为单位排列成矩阵的多个单元，排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

2. 发明授权

US07170777B2 Phase change memory device and method of operating the same 有权
标题翻译：相变存储器件及其操作方法
公开(公告)号：US07170777B2
公开(公告)日：2007-01-30
申请号：US11193413
申请日：2005-08-01
申请人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
发明人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C8/08 , G11C13/0004 , G11C13/0028 , G11C13/0069 , G11C2013/008
摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.
摘要翻译：提供了一种相变存储器件及其操作方法。相变存储装置可以包括以行和列为单位排列成矩阵的多个单元，排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

3. 发明授权

US06966952B2 Apparatus of depositing thin film with high uniformity 失效
公开(公告)号：US06966952B2
公开(公告)日：2005-11-22
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

4. 发明申请

US20050129848A1 Patterned deposition source unit and method of depositing thin film using the same 审中-公开
标题翻译：图案化沉积源单元和使用其沉积薄膜的方法
公开(公告)号：US20050129848A1
公开(公告)日：2005-06-16
申请号：US10902798
申请日：2004-08-02
申请人： Sang-jun Choi , Young-eal Kim , Dong-joon Ma
发明人： Sang-jun Choi , Young-eal Kim , Dong-joon Ma
IPC分类号： H01L21/203 , C23C14/24 , C23C16/00
CPC分类号： C23C14/243
摘要： Provided is a patterned deposition source unit for forming a thin film on a substrate and a deposition method using the same. The patterned deposition source unit includes a main body that includes a loading section for loading a deposition material and a cover unit, which covers openings of the loading section and has a plurality of line shaped openings. The deposition material vaporized through line shaped openings of the cover unit can be vertically deposited on the substrate which moves back and forth over the main body. The method enables the improvement in the uniformity of a thin film by preventing dispersion of the deposition material in a conventional depositor, and the improvement in the density of a thin film by increasing vapor flux per unit area by reducing the distance between the deposition source unit and the substrate.
摘要翻译：提供了一种用于在基板上形成薄膜的图案化沉积源单元和使用其的沉积方法。图案化沉积源单元包括主体，该主体包括用于装载沉积材料的装载部分和覆盖装置，其覆盖装载部分的开口并且具有多个线状开口。通过盖单元的线形开口蒸发的沉积材料可以垂直地沉积在基板上，该基板在主体上前后移动。该方法通过防止沉积材料在常规沉积物中的分散而提高薄膜的均匀性，并且通过减小沉积源单元之间的距离来提高薄膜的密度，通过增加单位面积的蒸气通量来提高薄膜的密度和基板。

5. 发明申请

US20050150461A1 Apparatus of depositing thin film with high uniformity 失效
标题翻译：沉积高均匀度薄膜的设备
公开(公告)号：US20050150461A1
公开(公告)日：2005-07-14
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.
摘要翻译：在真空室中在晶片上沉积沉积材料的沉积设备包括安装在真空室中以蒸发沉积材料的沉积舟，加载晶片的晶片引导件，晶片引导件具有与晶片转动装置，当晶片导向件接近时旋转旋转构件的晶片旋转装置以及在真空室的入口，沉积舟和晶片旋转装置之间使晶片导向件往复运动的晶片传送装置。

6. 发明授权

US08632855B2 Methods of preparing a graphene sheet 有权
标题翻译：制备石墨烯片的方法
公开(公告)号：US08632855B2
公开(公告)日：2014-01-21
申请号：US12656823
申请日：2010-02-17
申请人： Xianyu Wenxu , Dong-joon Ma , Jung-hyun Lee
发明人： Xianyu Wenxu , Dong-joon Ma , Jung-hyun Lee
IPC分类号： B05D3/02 , C01B31/04
CPC分类号： H05B3/145 , H05B2214/04
摘要： Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.
摘要翻译：提供了制备碳基片材的方法，所述方法包括通过对包含含碳材料的基材进行退火处理，将基材上的含碳材料对准并在基板上形成碳基片材。碳基片可以是石墨烯片。

7. 发明授权

US08445366B2 Electron beam annealing apparatus and annealing methods using the same 有权
标题翻译：电子束退火装置及使用其的退火方法
公开(公告)号：US08445366B2
公开(公告)日：2013-05-21
申请号：US12457916
申请日：2009-06-25
申请人： Jung-hyun Lee , Jong-min Kim , Dong-joon Ma , Chang-soo Lee
发明人： Jung-hyun Lee , Jong-min Kim , Dong-joon Ma , Chang-soo Lee
IPC分类号： H01L21/428 , H01L21/477
CPC分类号： H01L21/02689 , H01J37/317 , H01J2237/3156 , H01J2237/316 , H01L21/02532
摘要： Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate.
摘要翻译：提供了用于退火衬底上的薄层的电子束退火装置和使用该装置的退火方法。电子束退火装置可以包括可以将脉冲电子束扫描到衬底上的电子束扫描单元。

8. 发明授权

US08748969B2 Non-volatile memory device including dummy electrodes and method of fabricating the same 有权
标题翻译：包括虚拟电极的非易失性存储器件及其制造方法
公开(公告)号：US08748969B2
公开(公告)日：2014-06-10
申请号：US12654470
申请日：2009-12-22
申请人： Xianyu Wenxu , Jung-hyun Lee , Dong-joon Ma , Yeon-hee Kim , Yong-young Park , Chang-soo Lee
发明人： Xianyu Wenxu , Jung-hyun Lee , Dong-joon Ma , Yeon-hee Kim , Yong-young Park , Chang-soo Lee
IPC分类号： H01L29/792
CPC分类号： H01L27/11556 , H01L27/11551 , H01L27/11578
摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件可以包括衬底和衬底上的多个半导体柱。多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。多个通孔塞可以连接到多个控制栅电极。多个字线可以在多个通孔插头上。多个通孔塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

9. 发明授权

US08299521B2 Nonvolatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08299521B2
公开(公告)日：2012-10-30
申请号：US12656681
申请日：2010-02-12
申请人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
IPC分类号： H01L29/72
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11582
摘要： Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.
摘要翻译：提供一种具有垂直折叠结构的非易失性存储器件和制造非易失性存储器件的方法。半导体结构包括基本垂直的第一和第二部分。沿着半导体结构的第一和第二部分布置多个存储单元并串联连接。

10. 发明申请

US20100155826A1 Non-volatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100155826A1
公开(公告)日：2010-06-24
申请号：US12654470
申请日：2009-12-22
申请人： Xianyu Wenxu , Jung-hyun Lee , Dong-joon Ma , Yeon-hee Kim , Yong-young Park , Chang-soo Lee
发明人： Xianyu Wenxu , Jung-hyun Lee , Dong-joon Ma , Yeon-hee Kim , Yong-young Park , Chang-soo Lee
IPC分类号： H01L27/115 , H01L21/8246 , H01L21/20
CPC分类号： H01L27/11556 , H01L27/11551 , H01L27/11578
摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件可以包括衬底和衬底上的多个半导体柱。多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。多个通孔塞可以连接到多个控制栅电极。多个字线可以在多个通孔插头上。多个通孔插塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

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