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1. 发明申请

US20050150461A1 Apparatus of depositing thin film with high uniformity 失效
标题翻译：沉积高均匀度薄膜的设备
公开(公告)号：US20050150461A1
公开(公告)日：2005-07-14
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.
摘要翻译：在真空室中在晶片上沉积沉积材料的沉积设备包括安装在真空室中以蒸发沉积材料的沉积舟，加载晶片的晶片引导件，晶片引导件具有与晶片转动装置，当晶片导向件接近时旋转旋转构件的晶片旋转装置以及在真空室的入口，沉积舟和晶片旋转装置之间使晶片导向件往复运动的晶片传送装置。

2. 发明申请

US20050129848A1 Patterned deposition source unit and method of depositing thin film using the same 审中-公开
标题翻译：图案化沉积源单元和使用其沉积薄膜的方法
公开(公告)号：US20050129848A1
公开(公告)日：2005-06-16
申请号：US10902798
申请日：2004-08-02
申请人： Sang-jun Choi , Young-eal Kim , Dong-joon Ma
发明人： Sang-jun Choi , Young-eal Kim , Dong-joon Ma
IPC分类号： H01L21/203 , C23C14/24 , C23C16/00
CPC分类号： C23C14/243
摘要： Provided is a patterned deposition source unit for forming a thin film on a substrate and a deposition method using the same. The patterned deposition source unit includes a main body that includes a loading section for loading a deposition material and a cover unit, which covers openings of the loading section and has a plurality of line shaped openings. The deposition material vaporized through line shaped openings of the cover unit can be vertically deposited on the substrate which moves back and forth over the main body. The method enables the improvement in the uniformity of a thin film by preventing dispersion of the deposition material in a conventional depositor, and the improvement in the density of a thin film by increasing vapor flux per unit area by reducing the distance between the deposition source unit and the substrate.
摘要翻译：提供了一种用于在基板上形成薄膜的图案化沉积源单元和使用其的沉积方法。图案化沉积源单元包括主体，该主体包括用于装载沉积材料的装载部分和覆盖装置，其覆盖装载部分的开口并且具有多个线状开口。通过盖单元的线形开口蒸发的沉积材料可以垂直地沉积在基板上，该基板在主体上前后移动。该方法通过防止沉积材料在常规沉积物中的分散而提高薄膜的均匀性，并且通过减小沉积源单元之间的距离来提高薄膜的密度，通过增加单位面积的蒸气通量来提高薄膜的密度和基板。

3. 发明授权

US06966952B2 Apparatus of depositing thin film with high uniformity 失效
公开(公告)号：US06966952B2
公开(公告)日：2005-11-22
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

4. 发明申请

US20100200908A1 Nonvolatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100200908A1
公开(公告)日：2010-08-12
申请号：US12656681
申请日：2010-02-12
申请人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11582
摘要： Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.
摘要翻译：提供一种具有垂直折叠结构的非易失性存储器件和制造非易失性存储器件的方法。半导体结构包括基本垂直的第一和第二部分。沿着半导体结构的第一和第二部分布置多个存储单元并串联连接。

5. 发明授权

US08299521B2 Nonvolatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08299521B2
公开(公告)日：2012-10-30
申请号：US12656681
申请日：2010-02-12
申请人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
IPC分类号： H01L29/72
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11582
摘要： Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.
摘要翻译：提供一种具有垂直折叠结构的非易失性存储器件和制造非易失性存储器件的方法。半导体结构包括基本垂直的第一和第二部分。沿着半导体结构的第一和第二部分布置多个存储单元并串联连接。

6. 发明申请

US20060113928A1 Electromagnetic induced accelerator based on coil-turn modulation 有权
标题翻译：基于线圈匝调制的电磁感应加速器
公开(公告)号：US20060113928A1
公开(公告)日：2006-06-01
申请号：US11288386
申请日：2005-11-29
申请人： Won-taek Park , Vladimir Volynets , Young-eal Kim
发明人： Won-taek Park , Vladimir Volynets , Young-eal Kim
IPC分类号： H05H7/00
CPC分类号： H05H1/54 , H01J27/14
摘要： An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.
摘要翻译：一种基于线圈匝调制的电磁感应加速器，包括具有不同直径的内圆柱体和外圆柱体，该圆柱体同轴地设置以形成在其间的空间部分的通道; 沿着通道的上表面螺旋地向内缠绕的放电线圈，用于通过在通道中引起磁场和次级电流来产生等离子体; 并且内圈和外圈线圈沿着内筒的内表面和外筒的外表面螺旋地缠绕，彼此平行，以通过抵消磁场的方式在内筒和外筒的共同轴线的方向上加速等离子体在轴的方向上感应。

7. 发明授权

US07253572B2 Electromagnetic induced accelerator based on coil-turn modulation 有权
标题翻译：基于线圈匝调制的电磁感应加速器
公开(公告)号：US07253572B2
公开(公告)日：2007-08-07
申请号：US11288386
申请日：2005-11-29
申请人： Won-taek Park , Vladimir Volynets , Young-eal Kim
发明人： Won-taek Park , Vladimir Volynets , Young-eal Kim
IPC分类号： H05H7/00
CPC分类号： H05H1/54 , H01J27/14
摘要： An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.
摘要翻译：一种基于线圈匝调制的电磁感应加速器，包括具有不同直径的内圆柱体和外圆柱体，该圆柱体同轴地设置以形成在其间的空间部分的通道; 沿着通道的上表面螺旋地向内缠绕的放电线圈，用于通过在通道中引起磁场和次级电流来产生等离子体; 并且内圈和外圈线圈沿着内筒的内表面和外筒的外表面螺旋地缠绕，彼此平行，以通过抵消磁场的方式在内筒和外筒的共同轴线的方向上加速等离子体在轴的方向上感应。

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