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1. 发明授权

US06686272B1 Anti-reflective coatings for use at 248 nm and 193 nm 有权
标题翻译：抗反射涂层用于248 nm和193 nm
公开(公告)号：US06686272B1
公开(公告)日：2004-02-03
申请号：US10020084
申请日：2001-12-13
申请人： Sang-Yun Lee , Masaichi Eda , Hongqiang Lu , Wei-Jen Hsia , Wilbur G. Catabay , Hiroaki Takikawa , Yongbae Kim
发明人： Sang-Yun Lee , Masaichi Eda , Hongqiang Lu , Wei-Jen Hsia , Wilbur G. Catabay , Hiroaki Takikawa , Yongbae Kim
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/0276 , H01L21/3148 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76835 , Y10S438/931 , Y10S438/952
摘要： The present invention is directed to a silicon carbide anti-reflective coating (ARC) and a silicon oxycarbide ARC. Another embodiment is directed to a silicon oxycarbide ARC that is treated with oxygen plasma. The invention includes method embodiments for forming silicon carbide layers and silicon oxycarbide layers as ARC's on a semiconductor substrate surface. Particularly, the methods include introducing methyl silane materials into a process chamber where they are ignited as plasma and deposited onto the substrate surface as silicon carbide. Another method includes introducing methyl silane precursor materials with an inert carrier gas into the process chamber with oxygen. These materials are ignited into a plasma, and silicon oxycarbide material is deposited onto the substrate. By regulating the oxygen flow rate, the optical properties of the silicon oxycarbide layer can be adjusted. In another embodiment, the silicon oxycarbide layer can be treated with oxygen plasma.
摘要翻译：本发明涉及碳化硅抗反射涂层（ARC）和碳氧化硅ARC。另一个实施方案涉及用氧等离子体处理的碳氧化硅ARC。本发明包括在半导体衬底表面上形成碳化硅层和碳氧化硅层作为ARC的方法实施例。特别地，所述方法包括将甲基硅烷材料引入处理室中，其中它们被等离子体点燃并作为碳化硅沉积在基板表面上。另一种方法包括将具有惰性载气的甲基硅烷前体材料用氧气引入到处理室中。将这些材料点燃到等离子体中，并将碳氧化硅材料沉积到基底上。通过调节氧气流速，可以调节碳硅氧烷层的光学性能。在另一个实施方案中，可以用氧等离子体处理碳氧化硅层。

2. 发明授权

US06613665B1 Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface 有权
标题翻译：一种用于形成集成电路结构的方法，其包括在上表面具有抗反射特性的低k电介质材料层
公开(公告)号：US06613665B1
公开(公告)日：2003-09-02
申请号：US10002981
申请日：2001-10-26
申请人： Wilbur G. Catabay , Wei-Jen Hsia
发明人： Wilbur G. Catabay , Wei-Jen Hsia
IPC分类号： H01L214763
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/76807 , H01L21/76826
摘要： A process is disclosed for forming an integrated circuit structure characterized by formation of a combined dielectric layer and antireflective coating layer. The process comprises forming a layer of dielectric material over an integrated circuit structure, and treating the surface of the layer of dielectric material to form an antireflective coating (ARC) surface therein. When a layer of photoresist is then formed over the ARC surface, and the layer of photoresist is exposed to a pattern of radiation, the ARC surface improves the accuracy of the replication, in the photoresist layer, of the pattern of radiation. Preferably, the surface of the dielectric layer is treated with a plasma comprising ions of elements and/or compounds to form the ARC surface.
摘要翻译：公开了一种用于形成集成电路结构的方法，其特征在于形成组合的电介质层和抗反射涂层。该方法包括在集成电路结构上形成介电材料层，以及处理介电材料层的表面以在其中形成抗反射涂层（ARC）表面。当然后在ARC表面上形成一层光致抗蚀剂，并且光致抗蚀剂层暴露于辐射图形时，ARC表面提高了光致抗蚀剂层中辐射图案复制的准确性。优选地，用包含元素和/或化合物的离子的等离子体处理介电层的表面以形成ARC表面。

3. 发明授权

US06204192B1 Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures 有权
标题翻译：在集成电路结构中的铜金属化的至少一个低介电常数绝缘层中形成的开口的等离子体清洁工艺
公开(公告)号：US06204192B1
公开(公告)日：2001-03-20
申请号：US09281602
申请日：1999-03-29
申请人： Joe W. Zhao , Wei-Jen Hsia , Wilbur G. Catabay
发明人： Joe W. Zhao , Wei-Jen Hsia , Wilbur G. Catabay
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/7681 , H01L21/76814 , H01L21/76826
摘要： A process is provided for removing etch residues from one or more openings formed in one or more layers of a low dielectric constant insulation material over a copper metal interconnect layer of an integrated circuit structure which includes cleaning exposed portions of the surface of the copper interconnect layer at the bottom of the one or more openings, the process comprising providing an anisotropic hydrogen plasma to cause a chemical reaction between ions in the plasma and the etch residues in the bottom of the one or more opening, including copper oxide on the exposed copper surface, to thereby clean the exposed portions of the copper surface, and to remove the etch residues without sputtering the copper at the bottom of the opening.
摘要翻译：提供了一种用于从集成电路结构的铜金属互连层上去除在低介电常数绝缘材料的一层或多层中形成的一个或多个开口的蚀刻残留物的工艺，其包括清洁铜互连层的表面的暴露部分在一个或多个开口的底部，该方法包括提供各向异性氢等离子体以引起等离子体中的离子与一个或多个开口底部的蚀刻残留物（包括暴露的铜表面上的氧化铜）的化学反应，从而清洁铜表面的暴露部分，并且在不溅射开口底部的铜的情况下除去蚀刻残留物。

4. 发明授权

US5789028A Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride 失效
标题翻译：在氮化钛的金属有机化学气相沉积中消除半导体衬底端部剥离的方法
公开(公告)号：US5789028A
公开(公告)日：1998-08-04
申请号：US811818
申请日：1997-03-04
申请人： Joe W. Zhao , Wei-Jen Hsia , Wilbur G. Catabay
发明人： Joe W. Zhao , Wei-Jen Hsia , Wilbur G. Catabay
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285
CPC分类号： C23C16/45521 , C23C16/34 , C23C16/455
摘要： A process and apparatus are described for inhibiting, but not completely eliminating, the deposition of titanium nitride by MOCVD on the end edge of a semiconductor substrate which comprises directing toward such substrate end edge a flow of one or more deposition-inhibiting gases in a direction which substantially opposes the flow of process gases toward the end edges of the substrate. This flow of deposition-inhibiting gases toward the end edges of the substrate reduces the deposition of the titanium nitride at the end edge of the semiconductor substrate either by directing some of the flow of process gases away from such end edge of the substrate, or by locally diluting such process gases in the region of the deposition chamber adjacent the end edge of the substrate, or by some combination of the foregoing. Such flow of deposition-inhibiting gas or gases may be directed toward the end edge of the substrate by flowing such deposition-inhibiting gas or gases through bores provided in the underlying substrate support pedestal which bores have openings peripherally spaced around the pedestal, adjacent the top of the pedestal, through which such gas or gases then exit beneath the plane of the top surface of the substrate and adjacent the end edge of the substrate.
摘要翻译：描述了一种方法和装置，用于通过MOCVD在半导体衬底的端部边缘上抑制但不完全消除氮化钛的沉积，该方法包括将一个或多个沉积抑制气体沿着方向其基本上反对处理气体朝向基板的端部边缘的流动。这种沉积抑制气体朝向衬底的端部边缘的流动减少了氮化钛在半导体衬底的端部边缘处的沉积，或者通过将一些工艺气体流从衬底的这种端部边缘引导，或者通过在邻近衬底的端边缘的沉积室的区域中或通过前述的某些组合来局部稀释这些工艺气体。这种沉积抑制气体或气体的流动可以通过使这种沉积抑制气体或气体通过设置在下面的基底支撑基座中的孔而被引向衬底的端部边缘，孔中具有围绕基座周向间隔开的开口，邻近顶部基座的这种气体或气体然后在衬底的顶表面的平面之下离开并且靠近衬底的端边缘。

5. 发明授权

US07259462B1 Interconnect dielectric tuning 有权
标题翻译：互连电介质调谐
公开(公告)号：US07259462B1
公开(公告)日：2007-08-21
申请号：US11419548
申请日：2006-05-22
申请人： Wai Lo , Hong Lin , Shiqun Gu , Wilbur G. Catabay , Zhihai Wang , Wei-Jen Hsia
发明人： Wai Lo , Hong Lin , Shiqun Gu , Wilbur G. Catabay , Zhihai Wang , Wei-Jen Hsia
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/76838 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.
摘要翻译：对形成集成电路的方法的改进。形成蚀刻停止层以覆盖集成电路的前端处理层。形成支撑结构，其被布置为支撑集成电路的各个级别上的导电互连。基本上去除了在制造互连期间形成的蚀刻停止层上方的所有非导电层。

6. 发明授权

US07071094B2 Dual layer barrier film techniques to prevent resist poisoning 有权
标题翻译：双层阻挡膜技术，以防止中毒
公开(公告)号：US07071094B2
公开(公告)日：2006-07-04
申请号：US10893659
申请日：2004-07-16
申请人： Hong-Qiang Lu , Wei-Jen Hsia , Wilbur G. Catabay
发明人： Hong-Qiang Lu , Wei-Jen Hsia , Wilbur G. Catabay
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/31144 , H01L21/3148 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76832
摘要： Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier layer. This technique maintains the low electrical leakage characteristics of the first barrier layer and reduces nitrogen poisoning of a photoresist layer subsequently applied.
摘要翻译：本发明提供一种通过在含有氮的第一阻挡层的顶部沉积第二无氮阻挡层来形成阻挡膜以防止半导体器件中的中毒的方法。在第二阻挡层上形成低k电介质层。该技术保持了第一阻挡层的低漏电特性，并且减少随后施加的光致抗蚀剂层的氮中毒。

7. 发明授权

US06930056B1 Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure 失效
标题翻译：低介电常数介电材料的等离子体处理，以形成用于形成用于集成电路结构的金属互连和/或填充通孔的结构
公开(公告)号：US06930056B1
公开(公告)日：2005-08-16
申请号：US09884736
申请日：2001-06-19
申请人： Wilbur G. Catabay , Wei-Jen Hsia
发明人： Wilbur G. Catabay , Wei-Jen Hsia
IPC分类号： H01L21/3105 , H01L21/311 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76829 , H01L21/31058 , H01L21/31138 , H01L21/76801 , H01L21/76807 , H01L21/7681 , H01L21/76825
摘要： A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of the layer of low k dielectric material with a plasma to form a layer of densified dielectric material over the remainder of the underlying layer of low k dielectric material, forming a second layer of low k dielectric material over the layer of densified dielectric material, and treating this second layer of low k dielectric material to form a second layer of densified dielectric material over the second layer of low k dielectric material. The layer or layers of densified dielectric material formed from the low k dielectric material provide mechanical support and can then function as etch stop and mask layers for the formation of vias and/or trenches.
摘要翻译：一种用于形成集成电路结构的工艺包括在先前形成的集成电路结构上形成低k电介质材料层，并用等离子体处理低k电介质材料层的上表面以形成一层致密的电介质材料，低k介电材料的下层的剩余部分，在致密化介电材料层上形成第二层低k电介质材料层，并处理该第二层低k电介质材料以形成第二层致密电介质材料第二层低k电介质材料。由低k电介质材料形成的致密化介电材料的层或层提供机械支撑，并且然后可以用作用于形成通孔和/或沟槽的蚀刻停止层和掩模层。

8. 发明授权

US06812134B1 Dual layer barrier film techniques to prevent resist poisoning 有权
标题翻译：双层阻挡膜技术，以防止中毒
公开(公告)号：US06812134B1
公开(公告)日：2004-11-02
申请号：US09896363
申请日：2001-06-28
申请人： Hong-Qiang Lu , Wei-Jen Hsia , Wilbur G. Catabay
发明人： Hong-Qiang Lu , Wei-Jen Hsia , Wilbur G. Catabay
IPC分类号： H01K214763
CPC分类号： H01L21/76829 , H01L21/31144 , H01L21/3148 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76832
摘要： Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier layer. This technique maintains the low electrical leakage characteristics of the first barrier layer and reduces nitrogen poisoning of a photoresist layer subsequently applied.
摘要翻译：本发明提供一种通过在含有氮的第一阻挡层的顶部沉积第二无氮阻挡层来形成阻挡膜以防止半导体器件中的中毒的方法。在第二阻挡层上形成低k电介质层。该技术保持了第一阻挡层的低漏电特性，并且减少随后施加的光致抗蚀剂层的氮中毒。

9. 发明授权

US06537896B1 Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric material 有权
标题翻译：用于在镶嵌结构中处理多孔低k电介质材料以在多孔低k电介质材料中的蚀刻通孔和沟槽表面上形成无孔电介质扩散阻挡层的方法
公开(公告)号：US06537896B1
公开(公告)日：2003-03-25
申请号：US10007405
申请日：2001-12-04
申请人： Wilbur G. Catabay , Wei-Jen Hsia
发明人： Wilbur G. Catabay , Wei-Jen Hsia
IPC分类号： H01L21322
CPC分类号： H01L21/76831 , H01L21/02107 , H01L21/02203 , H01L21/02321 , H01L21/0234 , H01L21/02362 , H01L21/31695 , H01L21/76802 , H01L21/76826
摘要： A process for forming a non-porous dielectric diffusion barrier layer on etched via and trench sidewall surfaces in a layer of porous low k dielectric material comprises exposing such etched surfaces to a plasma formed from one or more gases such as, for example, O2; H2; Ar; He; SiH4; NH3; N2; CHxFy, where x=1-3 and y=4-y; H2O; and mixtures of same, for a period of time sufficient to form from about 1 nanometer (nm) to about 20 nm of the non-porous dielectric diffusion barrier layer which prevents adsorption of moisture and other process gases into the layer of porous low k dielectric material, and prevents degassing from the porous low k dielectric material during subsequent processing.
摘要翻译：在多孔低k介电材料层中的蚀刻过孔和沟槽侧壁表面上形成无孔介电扩散阻挡层的方法包括将这种蚀刻表面暴露于由一种或多种气体例如O 2形成的等离子体; H2; Ar; 他; SiH4; NH3; N2; CHxFy，其中x = 1-3和y = 4-y; H2O; 和其混合物，足以形成约1纳米（nm）至约20nm的无孔介电扩散阻挡层的时间段，其阻止水分和其它工艺气体吸收到多孔低k电介质层中材料，并且在后续处理期间防止从多孔低k电介质材料脱气。

10. 发明授权

US06346490B1 Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps 有权
标题翻译：用于在等离子体蚀刻和等离子体清洗步骤之后处理低k碳掺杂的氧化硅介电材料的损坏表面的方法
公开(公告)号：US06346490B1
公开(公告)日：2002-02-12
申请号：US09543412
申请日：2000-04-05
申请人： Wilbur G. Catabay , Wei-Jen Hsia , Alex Kabansky
发明人： Wilbur G. Catabay , Wei-Jen Hsia , Alex Kabansky
IPC分类号： H01L2131
CPC分类号： H01L21/76814 , H01L21/31116 , H01L21/31633 , H01L21/76826 , H01L21/76831
摘要： Damaged surfaces of a low k carbon-containing silicon oxide dielectric material are treated with one or more carbon-containing gases, and in the absence of an oxidizing agent, to inhibit subsequent formation of silicon-hydroxyl bonds when the damaged surfaces of the low k dielectric material are thereafter exposed to moisture. The carbon-containing gas treatment of the invention is carried out after the step of oxidizing or “ashing” the resist mask to remove the mask, but prior to exposure of the damaged surfaces of the low k dielectric material to moisture. Optionally, the carbon-containing gas treatment may also be carried out after the initial step of etching the low k carbon-containing silicon oxide dielectric material to form vias or contact openings as well, particularly when exposure of the damaged surfaces of the low k dielectric material to moisture after the via etching step and prior to the resist removing oxidation step is possible. The treatment of the damaged low k carbon-containing silicon oxide dielectric material with a carbon-containing gas may be carried out with or without the assistance of a plasma, but preferably will be carried out in the presence of a plasma. An N2 densification step may also be carried out after the via etch step and optional carbon-containing gas treatment, but prior to the resist removal oxidation step.
摘要翻译：低k碳氧化硅介电材料的损伤表面用一种或多种含碳气体进行处理，并且在不存在氧化剂的情况下，当低k的损坏表面时，抑制随后的硅 - 羟基键形成介电材料此后暴露于水分。本发明的含碳气体处理在氧化或“灰化”抗蚀剂掩模以去除掩模的步骤之后，但是在将低k介电材料的损坏表面暴露于水分之前进行。任选地，含碳气体处理也可以在蚀刻低k含碳氧化硅电介质材料的初始步骤之后进行，以形成通孔或接触开口，特别是当暴露低k电介质的受损表面时在通孔蚀刻步骤之后和抗蚀剂去除氧化步骤之前的材料对湿气是可能的。用含碳气体处理损坏的低k含碳氧化硅电介质材料可以在或不用等离子体的帮助下进行，但优选在等离子体存在下进行。在通孔蚀刻步骤和任选的含碳气体处理之后，但在抗蚀剂去除氧化步骤之前，也可以进行N2致密化步骤。

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