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1. 发明授权

US07615421B2 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07615421B2
公开(公告)日：2009-11-10
申请号：US11011585
申请日：2004-12-15
申请人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
发明人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.
摘要翻译：本发明涉及一种制造薄膜晶体管的方法，更具体地说，涉及制造薄膜晶体管的方法，该方法不仅通过热处理制造具有大晶粒尺寸并且含有微量残余金属催化剂的多晶硅层，从而使在基板上形成非晶硅层之后，形成由氮化物膜形成的覆盖层，所述覆盖层在结晶非晶硅层时具有1.78〜1.90的折射率，并且在封盖层上形成金属催化剂层，而且还控制特性的多晶硅层，通过控制覆盖层的折射率。

2. 发明申请

US20060046357A1 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20060046357A1
公开(公告)日：2006-03-02
申请号：US11011585
申请日：2004-12-15
申请人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
发明人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer. The present invention provides a method for fabricating thin film transistor comprising the steps of preparing an insulation substrate; forming an amorphous silicon layer on the substrate; forming a capping layer having 1.78 to 1.90 of the refraction index on the amorphous silicon layer; forming a metal catalyst layer on the capping layer; and crystallizing the amorphous silicon layer into a polycrystalline silicon layer by heat treating the substrate. Therefore, a method for fabricating thin film transistor fabricates a thin film transistor which has superior characteristics and is capable of controlling the characteristics by controlling the refraction index of capping layer formed of nitride film to 1.78 to 1.90 when performing crystallization by super grain silicon crystallization method, thereby obtaining a semiconductor layer having a large grain size so that electron mobility is increased, and an amount of metal catalyst remained is decreased to lower leakage current, and controlling grain size of polycrystalline silicon layer by the refraction index of the capping layer so that a polycrystalline silicon layer having desired size and uniformity is obtained.
摘要翻译：本发明涉及一种制造薄膜晶体管的方法，更具体地说，涉及制造薄膜晶体管的方法，该方法不仅通过热处理制造具有大晶粒尺寸并且含有微量残余金属催化剂的多晶硅层，从而使在基板上形成非晶硅层之后，形成由氮化物膜形成的覆盖层，所述覆盖层在结晶非晶硅层时具有1.78〜1.90的折射率，并且在封盖层上形成金属催化剂层，而且还控制特性的多晶硅层，通过控制覆盖层的折射率。本发明提供一种制造薄膜晶体管的方法，包括以下步骤：制备绝缘衬底; 在所述基板上形成非晶硅层; 形成在非晶硅层上具有1.78至1.90折射率的覆盖层; 在覆盖层上形成金属催化剂层; 以及通过对所述衬底进行热处理将所述非晶硅层结晶成多晶硅层。因此，制造薄膜晶体管的方法制造薄膜晶体管，其具有优异的特性，并且能够通过将由氮化物膜形成的覆盖层的折射率控制在通过超晶硅结晶法进行结晶时为1.78〜1.90的特性从而获得具有大晶粒尺寸的电子迁移率增加的半导体层，并且减少金属催化剂的剩余量以降低泄漏电流，并且通过覆盖层的折射率控制多晶硅层的晶粒尺寸，使得得到所需尺寸和均匀性的多晶硅层。

3. 发明授权

US08409887B2 Organic light emitting diode display device and method of fabricating the same 有权
公开(公告)号：US08409887B2
公开(公告)日：2013-04-02
申请号：US12713846
申请日：2010-02-26
申请人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
发明人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

4. 发明申请

US20120000986A1 CANISTER FOR DEPOSITION APPARATUS AND DEPOSITION APPARATUS USING SAME 审中-公开
标题翻译：用于沉积装置和沉积装置的装置
公开(公告)号：US20120000986A1
公开(公告)日：2012-01-05
申请号：US13009279
申请日：2011-01-19
申请人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F24D5/00
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/52
摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.
摘要翻译：一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应源材料和使用该罐的沉积装置。沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

5. 发明授权

US07935586B2 Thin film transistor and method for fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07935586B2
公开(公告)日：2011-05-03
申请号：US12853263
申请日：2010-08-09
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/84
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no gram boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

6. 发明申请

US20110020990A1 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110020990A1
公开(公告)日：2011-01-27
申请号：US12853263
申请日：2010-08-09
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/336
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no gram boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

7. 发明申请

US20110014756A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20110014756A1
公开(公告)日：2011-01-20
申请号：US12889826
申请日：2010-09-24
申请人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
发明人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L27/12 , H01L27/1277 , H01L27/3244
摘要： A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括：基板; 设置在所述基板上的半导体层，并且包括沟道区，源极和漏极区以及在所述源极和漏极区的边缘处形成的具有第一杂质的边缘区，以及可选地在所述沟道区中; 绝缘半导体层的栅极绝缘层; 通过所述栅极绝缘层与所述半导体层绝缘的栅电极; 以及电连接到半导体层的源极和漏极。

8. 发明授权

US07815734B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07815734B2
公开(公告)日：2010-10-19
申请号：US11457491
申请日：2006-07-14
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L21/04 , C30B25/12
CPC分类号： H01L29/66757 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78675
摘要： Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.
摘要翻译：本发明提供一种薄膜晶体管及其制造方法，其中在基板上形成非晶硅层，在非晶硅层上形成包含不同浓度的金属催化剂的覆盖层图案化以形成覆盖层图案，并且使非晶硅层结晶化，使得在非晶硅层和覆盖层图案之间的界面处形成的晶种的密度和位置受到控制，从而提高了非晶硅层的尺寸和均匀性晶粒，并且其中通过一次结晶工艺在期望的位置选择性地形成所需尺寸和均匀性的多晶硅，导致具有优异和期望性能的薄膜晶体管。

9. 发明授权

US07795082B2 Method of fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07795082B2
公开(公告)日：2010-09-14
申请号：US11741273
申请日：2007-04-27
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L21/3226 , H01L27/1277 , H01L27/1288
摘要： A method of fabricating a CMOS thin film transistor includes: providing a substrate; forming an amorphous silicon layer on the substrate; performing a first annealing process on the substrate and crystallizing the amorphous silicon layer into a polysilicon layer; patterning the polysilicon layer to form first and second semiconductor layers; implanting first impurities into the first and second semiconductor layers; implanting second impurities into the first or second semiconductor layer; and performing a second annealing process on the semiconductor layers to remove the metal catalyst remaining in the first or second semiconductor layer, on which the second impurities are implanted, wherein the first impurities are implanted at a dose of 6×1013/cm2 to 5×1015/cm2, and the second impurities are implanted at a dose of 1×1011/cm2 to 3×1015/cm2.
摘要翻译：制造CMOS薄膜晶体管的方法包括：提供衬底; 在所述基板上形成非晶硅层; 在所述衬底上进行第一退火处理并将所述非晶硅层结晶成多晶硅层; 图案化多晶硅层以形成第一和第二半导体层; 将第一杂质注入到第一和第二半导体层中; 将第二杂质注入第一或第二半导体层; 以及对所述半导体层进行第二退火处理，以去除留在其中注入所述第二杂质的所述第一或第二半导体层中的金属催化剂，其中所述第一杂质以6×10 13 / cm 2至5× 1015 / cm2，第1杂质以1×10 11 / cm 2的剂量注入3×1015 / cm 2。

10. 发明授权

US07772061B2 Method for fabricating semiconductor device using two crystallization methods 有权
标题翻译：使用两种结晶方法制造半导体器件的方法
公开(公告)号：US07772061B2
公开(公告)日：2010-08-10
申请号：US12185229
申请日：2008-08-04
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L27/1255 , H01L27/1277
摘要： A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.
摘要翻译：一种半导体器件，其中薄膜晶体管的半导体层和电容器的第一电极由非晶硅形成，并且半导体层的源极/漏极区域和电容器的第一电极的整体或一部分通过金属诱导结晶法，半导体层的沟道区域通过金属诱导横向结晶法结晶化。

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