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1. 发明申请

US20070181192A1 Method and apparatus for monitoring gas flow amount in semiconductor manufacturing equipment 审中-公开
标题翻译：用于监测半导体制造设备中的气体流量的方法和装置
公开(公告)号：US20070181192A1
公开(公告)日：2007-08-09
申请号：US11546317
申请日：2006-10-12
申请人： Sang-Kook Choi , Chang-Hyun Lim , Young-Sang Lee , Nam-Oh Kim
发明人： Sang-Kook Choi , Chang-Hyun Lim , Young-Sang Lee , Nam-Oh Kim
IPC分类号： H01L21/66 , G01M3/26 , G01F1/00
CPC分类号： G01F25/0053 , Y10T137/8158
摘要： An apparatus for monitoring gas flow in a semiconductor manufacturing equipment, includes an exhaust line, a flow amount measuring unit, and a controller unit having a first input electrically connected to the flow amount measuring unit and a second input having a predetermined reference value, the controller unit having the capability of comparing data in the first input to the predetermined reference value in the second input and generate a signal when the data in the first input exceed the predetermined reference value. The apparatus of the present invention may be incorporated into a gas delivery system employed in semiconductor manufacturing to detect gas leaks.
摘要翻译：一种用于监测半导体制造设备中的气体流量的装置，包括排气管线，流量测量单元和具有电连接到流量测量单元的第一输入端和具有预定参考值的第二输入端的控制器单元，控制器单元具有将第一输入中的数据与第二输入中的预定参考值进行比较的能力，并且当第一输入中的数据超过预定参考值时产生信号。本发明的装置可以并入用于半导体制造的气体输送系统中以检测气体泄漏。

2. 发明授权

US07236485B2 Call forwarding method 失效
标题翻译：呼叫转接方式
公开(公告)号：US07236485B2
公开(公告)日：2007-06-26
申请号：US10202890
申请日：2002-07-26
申请人： Jung-Ouk Lim , Young-Sang Lee
发明人： Jung-Ouk Lim , Young-Sang Lee
IPC分类号： H04L12/28
CPC分类号： H04M1/006 , H04M1/2535 , H04M3/54 , H04M7/0057 , H04M7/1235 , H04M7/128
摘要： The present invention relates to a call forwarding method for a web phone which connects to at least two networks and is mounted with at least two communication ports. According to the call forwarding method, if a call is received at the selective call forwarding mode, the call forwarding mode is checked. If the call forwarding mode is set, the web phone announces such to a calling party, receives a port for call forwarding from the calling party, and conducts the calling forwarding unless the port received from the calling party is not of a busy route. If the web phone is on the automatic call forwarding mode and receives a call, the phone forwards the call to a predetermined number after confirming that the predetermined port for call forwarding is not of a busy route.
摘要翻译：本发明涉及一种用于网络电话的呼叫转移方法，该方法连接至少两个网络并安装有至少两个通信端口。根据呼叫转移方式，如果在选择呼叫转移模式下接收到呼叫，则检查呼叫转移模式。如果呼叫转移模式被设置，则网络电话向主叫方通知主叫方接收用于呼叫转移的端口，并且进行呼叫转移，除非从主叫方接收到的端口不是繁忙的路由。如果网络电话处于自动呼叫转移模式并接收呼叫，则在确认呼叫转移的预定端口不是繁忙路由之后，电话将呼叫转发到预定号码。

3. 发明授权

US09396988B2 Methods for fabricating semiconductor devices using liner layers to avoid damage to underlying patterns 有权
标题翻译：使用衬里层制造半导体器件以避免损坏底层图案的方法
公开(公告)号：US09396988B2
公开(公告)日：2016-07-19
申请号：US14703556
申请日：2015-05-04
申请人： Kyoung-Woo Lee , Woo-Jin Lee , Jong-Sam Kim , Woo-Kyung You , Young-Sang Lee , Min Huh
发明人： Kyoung-Woo Lee , Woo-Jin Lee , Jong-Sam Kim , Woo-Kyung You , Young-Sang Lee , Min Huh
IPC分类号： H01L21/02 , H01L21/311 , H01L21/70 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/31144 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76843 , H01L2221/1063
摘要： A method for fabricating a semiconductor device includes sequentially forming an interlayer insulating layer and a hard mask pattern including a first opening on a substrate including a lower pattern, forming a trench exposing the lower pattern in the interlayer insulating layer using the hard mask pattern, forming a liner layer including a first part formed along sidewalls and a bottom surface of the trench and a second part formed along a top surface of the hard mask pattern, forming a sacrificial pattern exposing the second part of the liner layer in the trench, removing the second part of the liner layer and the hard mask pattern using the sacrificial pattern, and after the removing of the hard mask pattern, removing the sacrificial pattern to expose the first part of the liner layer.
摘要翻译：一种制造半导体器件的方法包括在包括下图案的衬底上顺序地形成层间绝缘层和包括第一开口的硬掩模图案，使用硬掩模图案形成在层间绝缘层中暴露下图案的沟槽，形成包括沿着沟槽的侧壁和底表面形成的第一部分和沿着硬掩模图案的顶表面形成的第二部分的衬垫层，形成暴露沟槽中的衬垫层的第二部分的牺牲图案，衬垫层的第二部分和使用牺牲图案的硬掩模图案，并且在去除硬掩模图案之后，去除牺牲图案以露出衬垫层的第一部分。

4. 发明申请

US20160079115A1 Methods for Fabricating Semiconductor Devices Using Liner Layers to Avoid Damage to Underlying Patterns 有权
标题翻译：使用衬垫层制造半导体器件以避免损害底层图案的方法
公开(公告)号：US20160079115A1
公开(公告)日：2016-03-17
申请号：US14703556
申请日：2015-05-04
申请人： Kyoung-Woo Lee , Woo-Jin Lee , Jong-Sam Kim , Woo-Kyung You , Young-Sang Lee , Min Huh
发明人： Kyoung-Woo Lee , Woo-Jin Lee , Jong-Sam Kim , Woo-Kyung You , Young-Sang Lee , Min Huh
IPC分类号： H01L21/768
CPC分类号： H01L21/76802 , H01L21/31144 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76843 , H01L2221/1063
摘要： A method for fabricating a semiconductor device includes sequentially forming an interlayer insulating layer and a hard mask pattern including a first opening on a substrate including a lower pattern, forming a trench exposing the lower pattern in the interlayer insulating layer using the hard mask pattern, forming a liner layer including a first part formed along sidewalls and a bottom surface of the trench and a second part formed along a top surface of the hard mask pattern, forming a sacrificial pattern exposing the second part of the liner layer in the trench, removing the second part of the liner layer and the hard mask pattern using the sacrificial pattern, and after the removing of the hard mask pattern, removing the sacrificial pattern to expose the first part of the liner layer.
摘要翻译：一种制造半导体器件的方法包括在包括下图案的衬底上顺序地形成层间绝缘层和包括第一开口的硬掩模图案，使用硬掩模图案形成在层间绝缘层中暴露下图案的沟槽，形成包括沿着沟槽的侧壁和底表面形成的第一部分和沿着硬掩模图案的顶表面形成的第二部分的衬垫层，形成暴露沟槽中的衬垫层的第二部分的牺牲图案，衬垫层的第二部分和使用牺牲图案的硬掩模图案，并且在去除硬掩模图案之后，去除牺牲图案以露出衬垫层的第一部分。

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