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1. 发明申请

US20070181192A1 Method and apparatus for monitoring gas flow amount in semiconductor manufacturing equipment 审中-公开
标题翻译：用于监测半导体制造设备中的气体流量的方法和装置
公开(公告)号：US20070181192A1
公开(公告)日：2007-08-09
申请号：US11546317
申请日：2006-10-12
申请人： Sang-Kook Choi , Chang-Hyun Lim , Young-Sang Lee , Nam-Oh Kim
发明人： Sang-Kook Choi , Chang-Hyun Lim , Young-Sang Lee , Nam-Oh Kim
IPC分类号： H01L21/66 , G01M3/26 , G01F1/00
CPC分类号： G01F25/0053 , Y10T137/8158
摘要： An apparatus for monitoring gas flow in a semiconductor manufacturing equipment, includes an exhaust line, a flow amount measuring unit, and a controller unit having a first input electrically connected to the flow amount measuring unit and a second input having a predetermined reference value, the controller unit having the capability of comparing data in the first input to the predetermined reference value in the second input and generate a signal when the data in the first input exceed the predetermined reference value. The apparatus of the present invention may be incorporated into a gas delivery system employed in semiconductor manufacturing to detect gas leaks.
摘要翻译：一种用于监测半导体制造设备中的气体流量的装置，包括排气管线，流量测量单元和具有电连接到流量测量单元的第一输入端和具有预定参考值的第二输入端的控制器单元，控制器单元具有将第一输入中的数据与第二输入中的预定参考值进行比较的能力，并且当第一输入中的数据超过预定参考值时产生信号。本发明的装置可以并入用于半导体制造的气体输送系统中以检测气体泄漏。

2. 发明授权

US06837619B2 Furnace temperature detector 失效
标题翻译：炉温检测仪
公开(公告)号：US06837619B2
公开(公告)日：2005-01-04
申请号：US10442143
申请日：2003-05-21
申请人： Seong-Ho Cho , Sang-Kook Choi
发明人： Seong-Ho Cho , Sang-Kook Choi
IPC分类号： H01L21/22 , G01K7/02 , G01K3/06 , G01K1/14 , G01K3/08 , G01K3/14
CPC分类号： G01K7/02
摘要： A furnace temperature detector includes a spike thermocouple attached to a heating chamber; an overheat thermocouple attached to the heating chamber; an inner thermocouple installed inside a reaction tube; a temperature controller connected to the spike thermocouple and the inner thermocouple; an overheat controller connected the overheat thermocouple; and a control switch for directing the output line of the overheat thermocouple. When the furnace overheats, the overheat thermocouple detects the overheating and generates and outputs an electric signal corresponding to the overheating to the overheat controller; the overheat controller generates and outputs an overheat control signal. When the furnace is operating normally, the overheat thermocouple detects a furnace temperature and generates and outputs an electric signal corresponding to the temperature to the control switch; the control switch directs the output line of the overheat thermocouple to the temperature controller; the temperature controller generates and outputs a temperature control signal.
摘要翻译：炉温检测器包括附接到加热室的尖峰热电偶; 连接到加热室的过热热电偶; 内部热电偶安装在反应管内; 连接到尖峰热电偶和内部热电偶的温度控制器; 过热控制器连接过热热电偶; 以及用于引导过热热电偶的输出线的控制开关。当炉子过热时，过热热电偶检测过热，并将过热控制器的过热过程产生并输出; 过热控制器产生并输出过热控制信号。当炉正常运行时，过热热电偶检测炉温，并将与温度相对应的电信号输出到控制开关; 控制开关将过热热电偶的输出线引导到温度控制器; 温度控制器产生并输出温度控制信号。

3. 发明授权

US6068316A Large diameter wafer conveying system and method thereof 失效
标题翻译：大直径晶片输送系统及其方法
公开(公告)号：US6068316A
公开(公告)日：2000-05-30
申请号：US768696
申请日：1996-12-18
申请人： Dae-Woo Kim , Chang-Hyun Lim , Sang-Kook Choi , Jong-Dae Park
发明人： Dae-Woo Kim , Chang-Hyun Lim , Sang-Kook Choi , Jong-Dae Park
IPC分类号： B65G49/07 , H01L21/677 , H01L21/68 , H01L21/683 , B66C1/02
CPC分类号： H01L21/6838
摘要： A large diameter wafer conveying system includes a vacuum supplier and a valve unit for ON/OFF controlling a vacuum supplied from the vacuum supplier. A wafer holder stably absorbs and holds a wafer by using the vacuum supplied from the vacuum supplier through the valve unit. A residual vacuum clearer automatically clears a portion of the vacuum which remains after the valve unit is turned OFF to completely remove the vacuum.
摘要翻译：大直径晶片输送系统包括真空供应器和用于ON / OFF控制从真空供应器提供的真空的阀单元。晶片支架通过使用从真空供应器通过阀单元提供的真空来稳定地吸收和保持晶片。残余真空清除器自动清除在阀单元关闭之后保留的真空部分以完全去除真空。

4. 发明授权

US5616025A Vertical diffusion furnace having improved gas flow 失效
标题翻译：立式扩散炉具有改善的气流
公开(公告)号：US5616025A
公开(公告)日：1997-04-01
申请号：US558398
申请日：1995-11-16
申请人： Sang-kook Choi , Chung-hwan Kwon , Hong-keun Kim
发明人： Sang-kook Choi , Chung-hwan Kwon , Hong-keun Kim
IPC分类号： H01L21/22 , C30B31/16 , H01L21/223 , F27D3/12
CPC分类号： C30B31/16
摘要： A vertical diffusion furnace comprising; a quartz tube, a plurality of wafers loaded into the quartz tube, and a gas inlet formed in the quartz tube proximate a lowermost wafer in the plurality of wafers, and providing reactive gases into the quartz tube.
摘要翻译：一种垂直扩散炉，包括：石英管，装载到石英管中的多个晶片和形成在石英管中的气体入口，靠近多个晶片中的最下面的晶片，并将反应性气体提供到石英管中。

5. 发明授权

US08164148B2 Method of generating strong spin waves and spin devices for ultra-high speed information processing using spin waves 有权
标题翻译：使用自旋波产生超高速信息处理的强自旋波和自旋装置的方法
公开(公告)号：US08164148B2
公开(公告)日：2012-04-24
申请号：US12064060
申请日：2006-09-28
申请人： Sang-Koog Kim , Ki-Suk Lee , Sang-Kook Choi
发明人： Sang-Koog Kim , Ki-Suk Lee , Sang-Kook Choi
IPC分类号： G11B5/66 , H01L27/105
CPC分类号： H03K19/168 , G11C11/161 , G11C11/1675 , G11C13/06 , H01F1/401 , H01F1/408 , H03B15/006
摘要： Provided are a method of generating strong spin waves, a method of simultaneously generating spin waves and electromagnetic waves, a logic operation device using spin waves, a variety of spin wave devices employing the same, and a method of controlling phases of spin waves. In the method of generating spin waves, strong spin waves are generated by supplying various shapes of energies to a magnetic material in which a magnetic vortex and magnetic antivortex spin structures exist separately or together. In the logic operation device, wave factors of frequency, wavelength, amplitude, and phase of a spin wave generated by the method of generating spin waves are controlled and wave characteristics such as reflection, refraction, transmission, tunneling, superposition, interference, and diffraction are used.
摘要翻译：提供了产生强自旋波的方法，同时产生自旋波和电磁波的方法，使用自旋波的逻辑运算装置，采用该自旋波的各种自旋波装置以及控制自旋波相位的方法。在产生自旋波的方法中，通过向磁性材料提供各种形状的能量而产生强的自旋波，其中分别或一起存在磁涡旋和磁性抗涡旋结构。在逻辑运算装置中，通过产生自旋波的方法产生的自旋波的频率，波长，幅度和相位的波动因子受到控制，反射，折射，透射，隧穿，叠加，干涉和衍射等波特性被使用。

6. 发明申请

US20080255697A1 VERTICAL FURNACE HAVING LOT-UNIT TRANSFER FUNCTION AND RELATED TRANSFER CONTROL METHOD 审中-公开
标题翻译：具有多功能转换功能的垂直炉和相关传输控制方法
公开(公告)号：US20080255697A1
公开(公告)日：2008-10-16
申请号：US12053741
申请日：2008-03-24
申请人： Jae-Woo CHUNG , Sang-Kook CHOI
发明人： Jae-Woo CHUNG , Sang-Kook CHOI
IPC分类号： G06F17/00
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/32275 , G05B2219/45031 , H01L21/67276 , H01L21/67769 , Y02P90/18 , Y02P90/20
摘要： A system and method of transferring wafers by the lot to a vertical furnace are disclosed. The method includes receiving batch information related to a track-in operation and storing the batch information in a memory associated with the vertical furnace, wherein the batch information identifies a plurality of lots, sequentially transferring a plurality of carriers associated with the plurality of lots from an 1/0 port of the vertical furnace to a carrier stocker, transferring at least one of the plurality of carriers from the stock carrier to a wafer transfer stage before the carrier stocker receives all of the carriers in the plurality of carriers, and transferring wafers from at least one of the plurality of carriers from the wafer transfer stage to wafer boat.
摘要翻译：公开了一种将批料转移到立式炉中的晶片的系统和方法。该方法包括接收与跟踪操作有关的批次信息并将批量信息存储在与垂直炉相关联的存储器中，其中批量信息标识多个批次，顺序地将与多个批次相关联的多个载体从将垂直炉的1/0端口连接到载体储料器，在载体储料器接收多个载体中的所有载体之前将多个载体中的至少一个从储存载体转移到晶片转移级，并且转移晶片从多个载体中的至少一个从晶片传送台到晶片舟。

7. 发明申请

US20080231392A1 Method of Generating Strong Spin Waves and Spin Devices for Ultra-High Speed Information Processing Using Spin Waves 有权
标题翻译：使用自旋波生成超自旋波和旋转装置的超高速信息处理方法
公开(公告)号：US20080231392A1
公开(公告)日：2008-09-25
申请号：US12064060
申请日：2006-09-28
申请人： Sang-Koog Kim , Ki-Suk Lee , Sang-Kook Choi
发明人： Sang-Koog Kim , Ki-Suk Lee , Sang-Kook Choi
IPC分类号： G11C11/16
CPC分类号： H03K19/168 , G11C11/161 , G11C11/1675 , G11C13/06 , H01F1/401 , H01F1/408 , H03B15/006
摘要： Provided are a method of generating strong spin waves, a method of simultaneously generating spin waves and electromagnetic waves, a logic operation device using spin waves, a variety of spin wave devices employing the same, and a method of controlling phases of spin waves. In the method of generating spin waves, strong spin waves are generated by supplying various shapes of energies to a magnetic material in which a magnetic vortex and magnetic antivortex spin structures exist separately or together. When energies are applied to a patterned magnetic material so that magnetic vortex or magnetic antivortex can be generated, a strong torque is generated in a vortex core so that strong spin waves can be generated from the vortex core. The spin waves generated in this way have large amplitudes, short wavelengths, and high frequencies. In the logic operation device using spin waves and the spin wave devices employing the same, wave factors of frequency, wavelength, amplitude, and phase of a spin wave generated by the method of generating spin waves are controlled and wave characteristics such as reflection, refraction, transmission, tunneling, superposition, interference, and diffraction are used. According to the present invention, logic operation spin wave devices capable of performing ultra-high speed information processing and various shapes of optical devices using waves in optics can be reconstructed using spin waves.
摘要翻译：提供了产生强自旋波的方法，同时产生自旋波和电磁波的方法，使用自旋波的逻辑运算装置，采用该自旋波的各种自旋波装置以及控制自旋波相位的方法。在产生自旋波的方法中，通过向磁性材料提供各种形状的能量而产生强的自旋波，其中分别或一起存在磁涡旋和磁性抗涡旋结构。当将能量施加到图案化的磁性材料上使得可以产生磁涡旋或磁性反向涡流时，在涡流磁芯中产生强扭矩，从而可以从涡流芯产生强的自旋波。以这种方式产生的自旋波幅度较大，波长短，频率高。在使用自旋波的逻辑运算装置和采用该自旋波装置的自旋波装置中，通过产生自旋波的方法产生的自旋波的频率，波长，振幅和相位的波因数被控制，并且波特性如反射，折射，使用传输，隧道，叠加，干涉和衍射。根据本发明，可以使用自旋波来重构能够执行超高速信息处理的逻辑运算自旋波装置和使用光学中的波的各种形状的光学装置。

8. 发明授权

US5704984A Chemical vapor deposition apparatus with a heat radiation structure 失效
标题翻译：具有放热结构的化学气相沉积装置
公开(公告)号：US5704984A
公开(公告)日：1998-01-06
申请号：US768703
申请日：1996-12-18
申请人： Nam-Jin Lee , Sang-Kook Choi , Hyeog-Joon Ko , Chung-Hwan Kwon
发明人： Nam-Jin Lee , Sang-Kook Choi , Hyeog-Joon Ko , Chung-Hwan Kwon
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45572 , C23C16/455
摘要： A chemical vapor deposition (CVD) apparatus having a heat radiation structure. The CVD apparatus has a process chamber wherein the semiconductor substrate is located, a gas inlet for introducing a process gas into the process chamber, a manifold for supporting the process chamber and the gas inlet, and a heat radiating member provided around the gas inlet, for radiating heat transmitted from the manifold. The gas inlet has a plurality of radiation plates formed around the gas inlet and a plurality of through-holes formed in each of the radiation plates. With the gas inlet having the heat radiating structure, heat from the manifold during the deposition process is not transmitted to the gas supply line and the like. Thus the associated parts are not corroded or deformed.
摘要翻译：一种具有散热结构的化学气相沉积（CVD）装置。 CVD装置具有处理室，其中位于半导体基板上，用于将处理气体引入处理室的气体入口，用于支撑处理室和气体入口的歧管以及设置在气体入口周围的散热构件，用于散发从歧管传播的热量。气体入口具有围绕气体入口形成的多个辐射板和形成在每个辐射板中的多个通孔。在气体入口具有散热结构的情况下，在沉积过程中来自歧管的热量不会传送到气体供应管线等。因此，相关部件不被腐蚀或变形。

9. 发明授权

US06340625B1 Method for simultaneously forming thinner and thicker parts of a dual oxide layer having varying thicknesses 失效
标题翻译：同时形成具有不同厚度的双重氧化物层的较薄和较厚部分的方法
公开(公告)号：US06340625B1
公开(公告)日：2002-01-22
申请号：US09497687
申请日：2000-02-04
申请人： Sang Kook Choi , Kyung Hawn Cho , Won Sik An , Chung Hwan Kwon
发明人： Sang Kook Choi , Kyung Hawn Cho , Won Sik An , Chung Hwan Kwon
IPC分类号： H01L2130
CPC分类号： H01L21/0214 , H01L21/02131 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/02307 , H01L21/31662 , H01L21/32 , H01L21/823462 , Y10S438/981
摘要： A method for forming a dual oxide layer on a silicon substrate provides that layer having varying thicknesses by using a damage layer formed on the silicon substrate, or a silicon nitride layer deposited on the silicon substrate. The damage layer is formed on the silicon substrate by dry etching a designated part of the silicon substrate, and the dual oxide layer is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate. A pattern of the damage layer is defined by photolithography, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or Ar gas at a pressure of 900 mTorr or less, or using Cl2 or HBr. In the preoxidation cleaning step, a solution containing NH4F, HF, and H2O, a standard solution containing NH4OH, H2O2, and H2O, and/or HF are used. Meanwhile, using the nitride layer, after depositing the silicon nitride to a thickness of about 10 to about 100 Å on the silicon substrate, a pattern of the silicon nitride layer is defined by photolithography and the silicon nitride layer is partially removed depending on the pattern.
摘要翻译：在硅衬底上形成双重氧化物层的方法通过使用形成在硅衬底上的损伤层或沉积在硅衬底上的氮化硅层来提供具有变化厚度的层。通过对硅衬底的指定部分进行干蚀刻在硅衬底上形成损伤层，并且通过使用SiO 2的特性形成双氧化物层，通过该性质，损伤层上的氧化物层生长速度比在硅衬底。通过光刻法限定损伤层的图案，并且使用CF4，CHF3或Ar气体在900mTorr或更低的压力下或使用Cl 2或HBr形成具有约20至5000深度的损伤层。在预氧化清洗步骤中，使用含有NH 4 F，HF和H 2 O，含有NH 4 OH，H 2 O 2和H 2 O和/或HF的标准溶液的溶液。同时，使用氮化物层，在硅衬底上沉积氮化硅至约10至约100埃的厚度之后，通过光刻法限定氮化硅层的图案，并且根据图案部分去除氮化硅层。

10. 发明授权

US06207588B1 Method for simultaneously forming thinner and thicker parts of a dual oxide layer having varying thicknesses 失效
标题翻译：同时形成具有不同厚度的双重氧化物层的较薄和较厚部分的方法
公开(公告)号：US06207588B1
公开(公告)日：2001-03-27
申请号：US09135555
申请日：1998-08-18
申请人： Sang Kook Choi , Kyung Hawn Cho , Won Sik An , Chung Hwan Kwon
发明人： Sang Kook Choi , Kyung Hawn Cho , Won Sik An , Chung Hwan Kwon
IPC分类号： H01L2131
CPC分类号： H01L21/0214 , H01L21/02131 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/02307 , H01L21/31662 , H01L21/32 , H01L21/823462 , Y10S438/981
摘要： A method for forming a dual oxide layer on a silicon substrate provides that layer having varying thicknesses by using a damage layer formed on the silicon substrate, or a silicon nitride layer deposited on the silicon substrate. The damage layer is formed on the silicon substrate by dry etching a designated part of the silicon substrate, and the dual oxide layer is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate. A pattern of the damage layer is defined by photolithography, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or Ar gas at a pressure of 900 m Torr or less, or using Cl2 or HBr. In the preoxidation cleaning step, a solution containing NH4F, HF, and H2O, a standard solution containing NH4OH, H2O2, and H2O, and/or HF are used. Meanwhile, using the nitride layer, after depositing the silicon nitride to a thickness of about 10 to about 100 Å on the silicon substrate, a pattern of the silicon nitride layer is defined by photolithography and the silicon nitride layer is partially removed depending on the pattern.
摘要翻译：在硅衬底上形成双重氧化物层的方法通过使用形成在硅衬底上的损伤层或沉积在硅衬底上的氮化硅层来提供具有变化厚度的层。通过对硅衬底的指定部分进行干蚀刻在硅衬底上形成损伤层，并且通过使用SiO 2的特性形成双氧化物层，通过该性质，损伤层上的氧化物层生长速度比在硅衬底。通过光刻法限定损伤层的图案，并且使用CF 4，CHF 3或Ar气体在900m乇或更低的压力下或使用Cl 2或HBr形成深度为约20至5000的损伤层。在预氧化清洗步骤中，使用含有NH 4 F，HF和H 2 O，含有NH 4 OH，H 2 O 2和H 2 O和/或HF的标准溶液的溶液。同时，使用氮化物层，在硅衬底上沉积氮化硅至约10至约100埃的厚度之后，通过光刻法限定氮化硅层的图案，并且根据图案部分去除氮化硅层。

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