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1. 发明授权

US06977711B2 Liquid crystal display 失效
标题翻译：液晶显示器
公开(公告)号：US06977711B2
公开(公告)日：2005-12-20
申请号：US09983878
申请日：2001-10-26
申请人： Sang-Ki Kwak , Kwon-Young Choi , Young-Jae Tak , Myung-Jae Park , Woon-Yong Park
发明人： Sang-Ki Kwak , Kwon-Young Choi , Young-Jae Tak , Myung-Jae Park , Woon-Yong Park
IPC分类号： G02F1/136 , G02F1/13 , G02F1/1345 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35
CPC分类号： G02F1/13458 , G02F1/1309 , G02F1/1345
摘要： An LCD having a plurality of test pads applied with a common voltage, covered with respective shielding conductor or located sufficiently far from pixels. A gate wire including pluralities of gate lines and test pads disconnected from the gate lines and located near one ends of the gate lines, and a common electrode wire including a plurality of common electrodes and a common electrode pad connected to the common electrode electrodes are formed on a substrate, and covered with a gate insulating film. A data wire and a pixel electrode wire are formed thereon and covered with a passivation film. The passivation film and the gate insulating film have contact holes exposing the test pads and the common electrode pad. A plurality of connecting members which are connected to the test pads and the common electrode pad through the contact holes are formed on the passivation film. Alternatively, the passivation film and the gate insulating layer have contact holes exposing only the common electrode pad, and a plurality of shielding members are provided on the passivation layer to be connected to the common electrode pad and to cover the test pads. Alternatively, the distance between the gate lines and the test pads is equal to or larger than twice the width of the pixel.
摘要翻译：一种LCD，其具有施加有公共电压的多个测试焊盘，覆盖有相应的屏蔽导体或位于足够远离像素的位置。一种栅极线，其包括多条栅极线和测试焊盘，与栅极线断开并位于栅极线的一端附近，并且形成包括连接到公共电极电极的多个公共电极和公共电极焊盘的公共电极线在基板上，并覆盖有栅极绝缘膜。数据线和像素电极线形成在其上并被钝化膜覆盖。钝化膜和栅极绝缘膜具有暴露测试焊盘和公共电极焊盘的接触孔。通过接触孔连接到测试焊盘和公共电极焊盘的多个连接部件形成在钝化膜上。或者，钝化膜和栅极绝缘层具有仅暴露公共电极焊盘的接触孔，并且在钝化层上设置多个屏蔽构件，以连接到公共电极焊盘并覆盖测试焊盘。或者，栅极线和测试焊盘之间的距离等于或大于像素宽度的两倍。

2. 发明授权

US06337520B1 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof 失效
标题翻译：配线用组合物，使用该组合物的配线，其制造方法，使用配线的显示器及其制造方法
公开(公告)号：US06337520B1
公开(公告)日：2002-01-08
申请号：US09031486
申请日：1998-02-26
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Chun-Gi You
IPC分类号： H01L2348
CPC分类号： G02F1/1368 , G02F1/136227 , G02F1/136286 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.
摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线装置以及Al层和Cr层。由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

3. 发明授权

US06445004B1 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
标题翻译：配线用组合物，使用该组合物的布线及其制造方法，使用布线的显示器及其制造方法
公开(公告)号：US06445004B1
公开(公告)日：2002-09-03
申请号：US09617311
申请日：2000-07-14
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.
摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或半导体显示器以及Al层或Cr层。由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

4. 发明申请

US20060207145A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20060207145A1
公开(公告)日：2006-09-21
申请号：US11346925
申请日：2006-02-03
申请人： Man-Soo Kim , Valeri Tcherniak , Jeong-Seon Kim , Dong-Choul Yang , Young-Jae Tak , Dong-Lyoul Shin
发明人： Man-Soo Kim , Valeri Tcherniak , Jeong-Seon Kim , Dong-Choul Yang , Young-Jae Tak , Dong-Lyoul Shin
IPC分类号： A47G1/06
CPC分类号： G02F1/133308 , G02F2201/465
摘要： A display device includes a first receiving container, a display panel, and a second receiving container. The first receiving container includes a receiving bottom portion and a receiving side portion. The receiving side portion extends from an edge of the receiving bottom portion. The receiving bottom portion and the receiving side portion together define a receiving space therein. The display panel is positioned in the first receiving container. The display panel is configured for displaying images. The second receiving container includes a panel support portion and a chassis side portion. The second receiving container is partially combined with the first receiving container. The panel support portion fixes an edge of the display panel. The chassis side portion extends from an edge of the panel support portion. The receiving container and the top chassis may be efficiently combined without aid of a screw. Thus, the display device may be manufactured in a processing time substantially shorter than that of a conventional display device.
摘要翻译：显示装置包括第一接收容器，显示面板和第二接收容器。第一接收容器包括接收底部和接收侧部分。接收侧部分从接收底部的边缘延伸。接收底部和接收侧部分一起在其中限定了接收空间。显示面板位于第一接收容器中。显示面板被配置为显示图像。第二容纳容器包括面板支撑部分和底盘侧部分。第二接收容器与第一接收容器部分地组合。面板支撑部分固定显示面板的边缘。底盘侧部分从面板支撑部分的边缘延伸。接收容器和顶部底盘可以在没有螺丝的帮助下有效地组合。因此，显示装置可以在比传统显示装置短的处理时间内制造。

5. 发明授权

US6130443A Liquid crystal display having wires made of molybdenum-tungsten alloy and a method of manufacturing the same 有权
标题翻译：具有由钼 - 钨合金制成的导线的液晶显示器及其制造方法
公开(公告)号：US6130443A
公开(公告)日：2000-10-10
申请号：US170100
申请日：1998-10-13
申请人： Mun-Pyo Hong , Young-Jae Tak
发明人： Mun-Pyo Hong , Young-Jae Tak
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , H01L21/3213 , H01L29/45 , H01L29/00
CPC分类号： G02F1/136286 , H01L21/32134 , H01L27/124 , H01L29/458 , G02F2001/13629
摘要： A liquid crystal display has wires made of aluminum alloy layer, and two molybdenum-tungsten alloy layers MoW located on/under the aluminum alloy layer, respectively. To form a wire, the first molybdenum-tungsten alloy layer, the aluminum alloy layer, and the second molybdenum-tungsten alloy layer are sequentially deposited. The molybdenum-tungsten alloy layer has different etch rates for one etchant, depending on the deposition temperature and tungsten content ratio. Particularly, since the molybdenum-tungsten alloy layer has an etch rate similar to that of an aluminum layer and aluminum alloy layer for an aluminum etchant CH.sub.3 COOH/HNO.sub.3 /H.sub.3 PO.sub.4 /H.sub.2 O. Therefore, the first molybdenum-tungsten alloy layer having a lower etch rate than that of the aluminum layer or the aluminum alloy layer, and the second molybdenum-tungsten alloy layer having a higher etch rate than that of the aluminum layer or the aluminum alloy layer may be formed by adjusting deposition temperature and tungsten content ratio. Accordingly, the wires have a gradually sloped taper angle.
摘要翻译：液晶显示器具有由铝合金层制成的线和分别位于铝合金层之下的两个钼 - 钨合金层MoW。为了形成导线，顺序地沉积第一钼 - 钨合金层，铝合金层和第二钼 - 钨合金层。根据沉积温度和钨含量比，钼 - 钨合金层对于一种蚀刻剂具有不同的蚀刻速率。特别地，由于钼 - 钨合金层的蚀刻速率与用于铝蚀刻剂CH 3 COOH / HNO 3 / H 3 PO 4 / H 2 O的铝层和铝合金层相同。因此，具有比铝层或铝合金层蚀刻速率低的蚀刻速率的第一钼 - 钨合金层和比铝层或铝合金层蚀刻速率高的蚀刻速率的第二钼 - 钨合金层可以通过调节沉积温度和钨含量比来形成。因此，电线具有逐渐倾斜的锥角。

6. 发明授权

US06946681B2 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 失效
标题翻译：配线用组合物，使用该组合物的布线及其制造方法，使用布线的显示器及其制造方法
公开(公告)号：US06946681B2
公开(公告)日：2005-09-20
申请号：US10732480
申请日：2003-12-11
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/28 , H01L23/482 , H01L29/423 , H01L29/49 , H01L29/04 , H01L31/036 , H01L31/0376
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.
摘要翻译： Mo或MoW组合物层具有小于15μOggacm的低电阻率，并且使用Al合金附魔或Cr附魔蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或半导体显示器以及Al层或Cr层。由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 O 2 O 2的蚀刻气体系统防止Mo或MoW合金层的蚀刻，以及SF 6+ + HCl（+ He）或SF 6 + Cl 2 2的蚀刻气体 >（+ He）可以形成要平滑的接触孔的边缘轮廓。此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢的气体和选自以下的至少一种气体的蚀刻气体系统： 4，CHF 3，CHClF 2，CH 3，F和C 2 _{6 ，产生良好的TFT特性，H 2等离子体处理可进一步提高TFT特性。}

7. 发明授权

US06570182B2 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
公开(公告)号：US06570182B2
公开(公告)日：2003-05-27
申请号：US10190494
申请日：2002-07-09
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

8. 发明授权

US6081308A Method for manufacturing liquid crystal display 失效
标题翻译：制造液晶显示器的方法
公开(公告)号：US6081308A
公开(公告)日：2000-06-27
申请号：US31445
申请日：1998-02-26
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jueng-Gil Lee
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jueng-Gil Lee
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/28 , H01L23/482 , H01L29/423 , H01L29/49 , G02F1/136 , G02F1/1343 , H01L23/48 , H01L29/04
CPC分类号： G02F1/1368 , G02F1/136286 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , G02F1/136227 , G02F2001/13629 , H01L2924/0002
摘要： Since Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single Mo or MoW layer can be used as a wiring by itself of large scale and high resolution liquid crystal. The Mo or MoW layer has the low resistivity of less than 15 .mu..OMEGA.cm and is etched to have a smooth taper angle using an Al etchant with Al or Al alloy. Therefore, it is possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.
摘要翻译：由于通过调整沉积压力可以沉积Mo或MoW层以便对衬底施加低应力，所以可以使用单个Mo或MoW层作为大规模和高分辨率液晶本身的布线。 Mo或MoW层具有小于15微米欧米伽厘米的低电阻率，并且使用Al或Al合金的Al蚀刻剂被蚀刻以具有平滑的锥角。因此，可以减少光刻工艺的数量并防止电池效应和产生小丘。

9. 发明授权

US06686606B2 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
公开(公告)号：US06686606B2
公开(公告)日：2004-02-03
申请号：US10389778
申请日：2003-03-18
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chua-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chua-Gi You
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

10. 发明授权

US06582982B2 Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
公开(公告)号：US06582982B2
公开(公告)日：2003-06-24
申请号：US09962210
申请日：2001-09-26
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： H01L2100
CPC分类号： G02F1/1368 , G02F1/136227 , G02F1/136286 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

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