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1. 发明授权

US07141494B2 Method for reducing tungsten film roughness and improving step coverage 有权
标题翻译：降低钨膜粗糙度和提高台阶覆盖率的方法
公开(公告)号：US07141494B2
公开(公告)日：2006-11-28
申请号：US10649351
申请日：2003-08-26
申请人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
发明人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/902
摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
摘要翻译：通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。该方法的每个循环提供了一个或多个钨膜的单层。该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

2. 发明授权

US07262125B2 Method of forming low-resistivity tungsten interconnects 有权
标题翻译：形成低电阻钨互连的方法
公开(公告)号：US07262125B2
公开(公告)日：2007-08-28
申请号：US10815560
申请日：2004-03-31
申请人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
发明人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763
CPC分类号： C23C16/45523 , C23C16/0281 , C23C16/08 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.
摘要翻译：提供了在基板上制备低电阻率钨膜的方法和装置。方法包括使用脉冲成核层（PNL）技术在衬底上形成钨成核层并在其上沉积体钨层。用于形成钨成核层的方法包括使用含硼物质，含钨前体和任选的硅烷。所描述的方法对于需要薄的低电阻率薄膜（例如互连应用）的应用特别有用。

3. 发明授权

US08101521B1 Methods for improving uniformity and resistivity of thin tungsten films 有权
标题翻译：改善薄钨膜的均匀性和电阻率的方法
公开(公告)号：US08101521B1
公开(公告)日：2012-01-24
申请号：US12636616
申请日：2009-12-11
申请人： Juwen Gao , Lana Hiului Chan , Panya Wongsenakhum
发明人： Juwen Gao , Lana Hiului Chan , Panya Wongsenakhum
IPC分类号： H01L21/44
CPC分类号： H01L21/76876 , C23C16/0281 , C23C16/08 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.
摘要翻译：本文所述的方法涉及沉积低电阻率，高保形钨成核层。这些层用作沉积钨体层的种子层。该方法对于钨插头填充特别有用，其中以高纵横比特征沉积钨。所述方法包括通过组合的PNL和CVD工艺沉积成核层。首先在PNL工艺中将衬底暴露于还原剂和钨前体的一个或多个循环的顺序脉冲。然后通过在化学气相沉积工艺中同时将衬底暴露于还原剂和钨前体来完成成核层。在某些实施方案中，该方法在不使用硼烷作为还原剂的情况下进行。

4. 发明授权

US07655567B1 Methods for improving uniformity and resistivity of thin tungsten films 有权
标题翻译：改善薄钨膜的均匀性和电阻率的方法
公开(公告)号：US07655567B1
公开(公告)日：2010-02-02
申请号：US11782570
申请日：2007-07-24
申请人： Juwen Gao , Lana Hiului Chan , Panya Wongsenakhum
发明人： Juwen Gao , Lana Hiului Chan , Panya Wongsenakhum
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76876 , C23C16/0281 , C23C16/08 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.
摘要翻译：本文所述的方法涉及沉积低电阻率，高保形钨成核层。这些层用作沉积钨体层的种子层。该方法对于钨插头填充特别有用，其中以高纵横比特征沉积钨。所述方法包括通过组合的PNL和CVD工艺沉积成核层。首先在PNL工艺中将衬底暴露于还原剂和钨前体的一个或多个循环的顺序脉冲。然后通过在化学气相沉积工艺中同时将衬底暴露于还原剂和钨前体来完成成核层。在某些实施方案中，该方法在不使用硼烷作为还原剂的情况下进行。

5. 发明申请

US20080124926A1 Methods for growing low-resistivity tungsten film 有权
标题翻译：生长低电阻率钨膜的方法
公开(公告)号：US20080124926A1
公开(公告)日：2008-05-29
申请号：US11265531
申请日：2005-11-01
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

6. 发明授权

US07589017B2 Methods for growing low-resistivity tungsten film 有权
标题翻译：生长低电阻率钨膜的方法
公开(公告)号：US07589017B2
公开(公告)日：2009-09-15
申请号：US11265531
申请日：2005-11-01
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

7. 发明授权

US08048805B2 Methods for growing low-resistivity tungsten film 有权
标题翻译：生长低电阻率钨膜的方法
公开(公告)号：US08048805B2
公开(公告)日：2011-11-01
申请号：US12538770
申请日：2009-08-10
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

8. 发明申请

US20100035427A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FILM 有权
标题翻译：用于生长低电阻丝网膜的方法
公开(公告)号：US20100035427A1
公开(公告)日：2010-02-11
申请号：US12538770
申请日：2009-08-10
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

9. 发明授权

US08329576B2 Method for improving uniformity and adhesion of low resistivity tungsten film 有权
标题翻译：改善低电阻率钨膜的均匀性和附着力的方法
公开(公告)号：US08329576B2
公开(公告)日：2012-12-11
申请号：US12829119
申请日：2010-07-01
申请人： Lana Hiului Chan , Feng Chen , Karl B. Levy
发明人： Lana Hiului Chan , Feng Chen , Karl B. Levy
IPC分类号： H01L21/443
CPC分类号： C23C16/0281 , C23C16/02 , C23C16/06 , C23C16/45523 , H01L21/28562 , H01L21/32051
摘要： Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.
摘要翻译：提供了改善低电阻率钨膜的均匀性和粘附性的方法。通过在沉积钨体层之前将钨成核层暴露于一系列脉冲中的还原剂形成低电阻率钨膜。根据各种实施例，该方法包括以不同的流速，不同的脉冲时间和不同的间隔时间来减少代理脉冲。

10. 发明申请

US20090149022A1 METHOD FOR IMPROVING UNIFORMITY AND ADHESION OF LOW RESISTIVITY TUNGSTEN FILM 有权
标题翻译：改善低电阻钨膜的均匀性和粘合性的方法
公开(公告)号：US20090149022A1
公开(公告)日：2009-06-11
申请号：US11951236
申请日：2007-12-05
申请人： Lana Hiului Chan , Feng Chen , Karl B. Levy
发明人： Lana Hiului Chan , Feng Chen , Karl B. Levy
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/0281 , C23C16/02 , C23C16/06 , C23C16/45523 , H01L21/28562 , H01L21/32051
摘要： Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.
摘要翻译：提供了改善低电阻率钨膜的均匀性和粘附性的方法。通过在沉积钨体层之前将钨成核层暴露于一系列脉冲中的还原剂形成低电阻率钨膜。根据各种实施例，该方法包括以不同的流速，不同的脉冲时间和不同的间隔时间来减少代理脉冲。

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