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1. 发明授权

US07589017B2 Methods for growing low-resistivity tungsten film 有权
标题翻译：生长低电阻率钨膜的方法
公开(公告)号：US07589017B2
公开(公告)日：2009-09-15
申请号：US11265531
申请日：2005-11-01
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

2. 发明授权

US07141494B2 Method for reducing tungsten film roughness and improving step coverage 有权
标题翻译：降低钨膜粗糙度和提高台阶覆盖率的方法
公开(公告)号：US07141494B2
公开(公告)日：2006-11-28
申请号：US10649351
申请日：2003-08-26
申请人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
发明人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/902
摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
摘要翻译：通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。该方法的每个循环提供了一个或多个钨膜的单层。该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

3. 发明申请

US20080124926A1 Methods for growing low-resistivity tungsten film 有权
标题翻译：生长低电阻率钨膜的方法
公开(公告)号：US20080124926A1
公开(公告)日：2008-05-29
申请号：US11265531
申请日：2005-11-01
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

4. 发明授权

US08048805B2 Methods for growing low-resistivity tungsten film 有权
标题翻译：生长低电阻率钨膜的方法
公开(公告)号：US08048805B2
公开(公告)日：2011-11-01
申请号：US12538770
申请日：2009-08-10
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

5. 发明申请

US20100035427A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FILM 有权
标题翻译：用于生长低电阻丝网膜的方法
公开(公告)号：US20100035427A1
公开(公告)日：2010-02-11
申请号：US12538770
申请日：2009-08-10
申请人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
发明人： Lana Hiului Chan , Panya Wongsenakhum , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76876
摘要： Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
摘要翻译：提供了用于沉积低电阻率钨膜的改进方法。所述方法包括在衬底上沉积钨成核层，然后在钨成核层上沉积钨体层以形成钨膜。这些方法提供了成核层厚度的精确控制和改进的台阶覆盖。根据各种实施例，所述方法包括通过在低温下将衬底暴露于脉冲成核层（PNL）循环来控制厚度和/或改善步骤覆盖。同样在一些实施方案中，该方法可以通过使用含硼物质和含钨前体的高温PNL循环来完成形成钨成核层而提高电阻率。

6. 发明授权

US07262125B2 Method of forming low-resistivity tungsten interconnects 有权
标题翻译：形成低电阻钨互连的方法
公开(公告)号：US07262125B2
公开(公告)日：2007-08-28
申请号：US10815560
申请日：2004-03-31
申请人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
发明人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763
CPC分类号： C23C16/45523 , C23C16/0281 , C23C16/08 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.
摘要翻译：提供了在基板上制备低电阻率钨膜的方法和装置。方法包括使用脉冲成核层（PNL）技术在衬底上形成钨成核层并在其上沉积体钨层。用于形成钨成核层的方法包括使用含硼物质，含钨前体和任选的硅烷。所描述的方法对于需要薄的低电阻率薄膜（例如互连应用）的应用特别有用。

7. 发明申请

US20080254623A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
标题翻译：用于生长高电阻率和小特征的低电阻电阻的方法
公开(公告)号：US20080254623A1
公开(公告)日：2008-10-16
申请号：US12030645
申请日：2008-02-13
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得大约14微米的电阻率。

8. 发明申请

US20110223763A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
标题翻译：用于生长高电阻率和小特征的低电阻电阻的方法
公开(公告)号：US20110223763A1
公开(公告)日：2011-09-15
申请号：US13095734
申请日：2011-04-27
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/768
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

9. 发明授权

US08409985B2 Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
标题翻译：生长低电阻率钨用于高纵横比和小特征的方法
公开(公告)号：US08409985B2
公开(公告)日：2013-04-02
申请号：US13095734
申请日：2011-04-27
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

10. 发明授权

US07955972B2 Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
标题翻译：生长低电阻率钨用于高纵横比和小特征的方法
公开(公告)号：US07955972B2
公开(公告)日：2011-06-07
申请号：US12030645
申请日：2008-02-13
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

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