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    • 10. 发明申请
    • Semiconductor optical device having current-confined structure
    • 具有限流结构的半导体光学器件
    • US20070120206A1
    • 2007-05-31
    • US11698418
    • 2007-01-25
    • Hyun SongO KwonWon HanSang ParkJong KimJae ShinYoung Ju
    • Hyun SongO KwonWon HanSang ParkJong KimJae ShinYoung Ju
    • H01L29/82
    • H01L33/145H01S5/18308H01S5/18316H01S5/18347H01S5/3095H01S2301/176
    • Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
    • 提供了具有限流结构的半导体光学器件。 该器件包括:第一导电类型的第一半导体层,其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层,形成在第一半导体层上并包括一个或多个材料层;第三半导体层, 第二导电类型的半导体层,其形成在第二半导体层上并且包括一个或多个材料层。 第一半导体层,第二半导体和第三半导体层中的一层或多层具有台面结构。 构成第一半导体层,第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入,并且凹部被部分地或全部地填充有氧化物层,氮化物层或者 他们。 具有电流限制区域的半导体光学器件是机械可靠的,高导热性的,并且是商业上优选的,并且可以用于光通信的波长范围。