会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US09176339B2
    • 2015-11-03
    • US13184341
    • 2011-07-15
    • Sang Ho KimYong Min Ha
    • Sang Ho KimYong Min Ha
    • G02F1/1335G02F1/1339
    • G02F1/133512G02F1/13394G02F2001/13396
    • A liquid crystal display device is discussed, which includes a first substrate and a second substrate, which face each other; a liquid crystal layer formed between the first substrate and the second substrate; and a column spacer formed between the first substrate and the second substrate, wherein the column spacer is formed within a light-shielding region on the first substrate or the second substrate, and a width of the light-shielding region in the periphery of the column spacer is greater than that of the light-shielding region where the column spacer is not formed. Since the width of the light-shielding region in the periphery of the column spacer is greater than that of the light-shielding region where the column spacer is not formed, even though an alignment film is damaged by the column spacer, light leakage can be prevented from occurring at the damaged portion.
    • 讨论了一种液晶显示装置,其包括彼此面对的第一基板和第二基板; 形成在第一基板和第二基板之间的液晶层; 以及形成在所述第一基板和所述第二基板之间的柱间隔件,其中所述柱间隔件形成在所述第一基板或所述第二基板上的遮光区域内,并且所述列的周边中的所述遮光区域的宽度 间隔物大于未形成柱间隔物的遮光区域。 由于柱间隔物的周围的遮光区域的宽度大于未形成柱间隔物的遮光区域的宽度,所以即使取向膜被柱间隔件损坏,也可以是漏光 防止在损坏部分发生。
    • 2. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE
    • 液晶显示装置
    • US20120019748A1
    • 2012-01-26
    • US13184341
    • 2011-07-15
    • Sang Ho KIMYong Min Ha
    • Sang Ho KIMYong Min Ha
    • G02F1/1335
    • G02F1/133512G02F1/13394G02F2001/13396
    • A liquid crystal display device is discussed, which includes a first substrate and a second substrate, which face each other; a liquid crystal layer formed between the first substrate and the second substrate; and a column spacer formed between the first substrate and the second substrate, wherein the column spacer is formed within a light-shielding region on the first substrate or the second substrate, and a width of the light-shielding region in the periphery of the column spacer is greater than that of the light-shielding region where the column spacer is not formed. Since the width of the light-shielding region in the periphery of the column spacer is greater than that of the light-shielding region where the column spacer is not formed, even though an alignment film is damaged by the column spacer, light leakage can be prevented from occurring at the damaged portion.
    • 讨论了一种液晶显示装置,其包括彼此面对的第一基板和第二基板; 形成在第一基板和第二基板之间的液晶层; 以及形成在所述第一基板和所述第二基板之间的柱间隔件,其中所述柱间隔件形成在所述第一基板或所述第二基板上的遮光区域内,并且所述列的周边中的所述遮光区域的宽度 间隔物大于未形成柱间隔物的遮光区域。 由于柱间隔物的周围的遮光区域的宽度大于未形成柱间隔物的遮光区域的宽度,因此即使取向膜被柱间隔件损坏,因此漏光可以是 防止在损坏部分发生。
    • 7. 发明授权
    • Transflective type liquid crystal display device and method for manufacturing the same
    • 反射型液晶显示装置及其制造方法
    • US07002651B2
    • 2006-02-21
    • US10849149
    • 2004-05-20
    • Yong Min HaHan Wook Hwang
    • Yong Min HaHan Wook Hwang
    • G02F1/1335
    • G02F1/133555G02F1/136213G02F1/136227
    • A transflective type liquid crystal display (LCD) device and method for manufacturing the same is disclosed, in which it is possible to decrease manufacturing cost and improve yield by decreasing the number of masks. The transflective type LCD device includes a substrate having reflection and transmission regions, a first insulating layer on an entire surface of the substrate whereon gate and storage electrodes are formed at predetermined portions, a transparent electrode overlapped with the storage electrode and formed over the transmission region of the first insulating layer, and a second insulating layer formed over the reflection region of the substrate and having a contact hole for exposing a predetermined portion of the transparent electrode.
    • 公开了一种透反式液晶显示(LCD)装置及其制造方法,其中通过减少掩模数量可以降低制造成本并提高产量。 半透射型LCD装置包括具有反射和透射区域的基板,在基板的整个表面上的预定部分形成有栅极和存储电极的第一绝缘层,与存储电极重叠并形成在透射区域上的透明电极 以及形成在所述基板的反射区域上的第二绝缘层,并且具有用于暴露所述透明电极的预定部分的接触孔。
    • 8. 发明授权
    • Liquid crystal display and method for fabricating the same
    • US06982771B2
    • 2006-01-03
    • US10683666
    • 2003-10-14
    • Ju Cheon YeoYong Min HaJae Deok Park
    • Ju Cheon YeoYong Min HaJae Deok Park
    • G02F1/136
    • G02F1/136227G02F1/1368
    • A liquid crystal display and a method for fabricating the same include a first substrate having an active layer with source/drain regions formed therein, a gate line and a data line extending in directions perpendicular to each other formed thereon, a dummy gate insulating film and a dummy gate electrode both formed on the first substrate in fixed patterns isolated from the gate line, an interlayer insulating film on the first substrate inclusive of the dummy gate electrode with a step, a drain electrode formed on the interlayer insulating film to overlap on upper regions of the dummy gate electrode so as to be in contact with the drain region and have a step to the data line, the data line formed on the interlayer insulating having a step to the drain electrode, a passivation film formed on the interlayer insulating film inclusive of the dummy gate electrode and the data line, a contact hole formed to expose the drain electrode overlapped with the dummy gate electrode, and a pixel electrode overlapping upper edges of the data line and in contact with the drain electrode through the contact hole, thereby reducing a vertical crosstalk while a large aperture is achieved, to improve the picture quality.
    • 9. 发明授权
    • Array substrate for a liquid crystal display device and a manufacturing method thereof
    • 液晶显示装置用阵列基板及其制造方法
    • US06753934B2
    • 2004-06-22
    • US10206356
    • 2002-07-29
    • Jae-Deok ParkYong Min Ha
    • Jae-Deok ParkYong Min Ha
    • G02F11343
    • G02F1/13458G02F1/133555G02F1/136213G02F1/136227
    • An array substrate for a transflective liquid crystal display device includes a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode; a gate line connected to the gate electrode; a data line connected to the source electrode, the data line defining a pixel region with the gate line; an active extension portion extending from the active layer to the pixel region, a first insulating layer on the active extension portion; a storage electrode on the first insulating layer over the active extension portion; a second insulating layer on the storage electrode; a reflective plate on the second insulating layer over the storage electrode, the reflective plate extending over one end of the data line and connected to an adjacent reflective plate; a third insulating layer on the reflective plate; and a pixel electrode on the third insulating layer, the pixel electrode extending over one end of the data line and connected to the drain electrode.
    • 一种半透射型液晶显示装置的阵列基板,包括:基板; 薄膜晶体管,其包括有源层,栅电极,源电极和漏电极; 连接到栅电极的栅极线; 连接到所述源电极的数据线,所述数据线限定具有所述栅极线的像素区域; 从所述有源层延伸到所述像素区域的有源延伸部分,所述有源延伸部分上的第一绝缘层; 在所述有源延伸部分上的所述第一绝缘层上的存储电极; 在所述存储电极上的第二绝缘层; 所述反射板在所述第二绝缘层上方的所述存储电极上,所述反射板在所述数据线的一端延伸并连接到相邻的反射板; 反射板上的第三绝缘层; 以及在所述第三绝缘层上的像素电极,所述像素电极在所述数据线的一端延伸并连接到所述漏电极。
    • 10. 发明授权
    • Thin film transistor and fabricating method thereof an insulating layer having a pattern not being in contact with source or drain electrode
    • 薄膜晶体管及其制造方法具有不与源极或漏极接触的图案的绝缘层
    • US06275275B1
    • 2001-08-14
    • US09705713
    • 2000-11-06
    • Yong Min Ha
    • Yong Min Ha
    • G02F1136
    • H01L27/124
    • The present invention relates to a thin film transistor and a fabricating method thereof which is applied to a buried bus coplanar type TFT wherein the source and drain wires are located on a substrate. The present invention includes an insulated substrate, a source electrode and a drain electrode on the insulated substrate, a first insulating layer on the insulated substrate wherein the first insulating layer has a predetermined pattern, an active layer on the first insulating layer wherein the active layer has a source region, a channel region and a drain region, a second insulating layer covering the active layer, and a gate electrode on the second insulating layer over the channel region.
    • 薄膜晶体管及其制造方法技术领域本发明涉及一种薄膜晶体管及其制造方法,其应用于埋地式总线共面型TFT,其中源极和漏极布线位于基板上。 本发明包括在绝缘基板上的绝缘基板,源电极和漏电极,绝缘基板上的第一绝缘层,其中第一绝缘层具有预定图案,第一绝缘层上的有源层,其中有源层 具有源极区域,沟道区域和漏极区域,覆盖有源层的第二绝缘层,以及在沟道区域上的第二绝缘层上的栅电极。