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1. 发明授权

US06930732B2 Array substrate for a liquid crystal display 失效
标题翻译：用于液晶显示器的阵列基板
公开(公告)号：US06930732B2
公开(公告)日：2005-08-16
申请号：US09971630
申请日：2001-10-09
申请人： Sang-Hun Oh , Yong-Min Ha , Jae-Deok Park
发明人： Sang-Hun Oh , Yong-Min Ha , Jae-Deok Park
IPC分类号： G02F1/1368 , G02F1/1362 , G09F9/30 , G09F9/35 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L29/786 , G02F1/136 , G02F1/1333 , H01L29/04 , H01L31/036
CPC分类号： G02F1/13458 , G02F1/136204 , G02F1/136286 , G02F2001/136295
摘要： An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a buffer layer on a substrate; forming a polycrystalline-silicon active layer on the buffer layer, the said active layer having an island shape; forming a gate insulation layer on the buffer layer to cover the polycrystalline-silicon active layer; forming a first metal layer on the gate insulation layer; forming a second metal layer on the first metal layer; patterning the first and second metal layer to form a gate electrode, a gate line and a gate shorting bar; forming a source contact area and a drain contact area at both sides of the polycrystalline-silicon active layer; forming an interlayer insulator on the gate insulation layer to cover the patterned first and second metal layers; patterning the interlayer insulator and the gate insulation layer so as to form a first contact hole to the source contact area and the second contact hole to a drain contact area, patterning a portion of the interlayer insulator on the gate shorting bar so as to form an etching hole, eliminating a portion of the first layer of the gate insulation layer under the etching hole, and forming a bridge portion in the second layer of the gate insulation layer under the etching hole; forming a third metal layer on the gate insulation layer and on the bridge portion; patterning the third metal layer so as to form a source electrode and a drain electrode, and removing the bridge portion when patterning the third metal layer; and forming a passivation layer on the interlayer insulator and on the patterned third metal layer.
摘要翻译：通过以下步骤制造用于液晶显示装置的阵列基板：在基板上形成缓冲层; 在所述缓冲层上形成多晶硅有源层，所述有源层具有岛状; 在所述缓冲层上形成栅极绝缘层以覆盖所述多晶硅有源层; 在栅绝缘层上形成第一金属层; 在所述第一金属层上形成第二金属层; 图案化第一和第二金属层以形成栅电极，栅极线和栅极短路棒; 在所述多晶硅活性层的两侧形成源极接触区域和漏极接触区域; 在所述栅极绝缘层上形成层间绝缘体以覆盖所述图案化的第一和第二金属层; 图案化层间绝缘体和栅极绝缘层，以形成到源极接触区域和第二接触孔到漏极接触区域的第一接触孔，图案化栅极短路棒上的层间绝缘体的一部分，从而形成蚀刻孔，去除蚀刻孔下面的栅极绝缘层的第一层的一部分，并且在蚀刻孔的下面的栅极绝缘层的第二层中形成桥接部分; 在所述栅极绝缘层和所述桥接部分上形成第三金属层; 图案化第三金属层以形成源电极和漏电极，并且在图案化第三金属层时去除桥接部分; 以及在层间绝缘体上和图案化的第三金属层上形成钝化层。

2. 发明授权

US06924179B2 Array substrate for a liquid crystal display and method for fabricating thereof 失效
标题翻译：液晶显示器用阵列基板及其制造方法
公开(公告)号：US06924179B2
公开(公告)日：2005-08-02
申请号：US10761388
申请日：2004-01-22
申请人： Sang-Hun Oh , Yong-Min Ha , Jae-Deok Park
发明人： Sang-Hun Oh , Yong-Min Ha , Jae-Deok Park
IPC分类号： G02F1/1368 , G02F1/1362 , G09F9/30 , G09F9/35 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L29/786 , H01L21/339
CPC分类号： G02F1/13458 , G02F1/136204 , G02F1/136286 , G02F2001/136295
摘要： An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a buffer layer on a substrate; forming a polycrystalline-silicon active layer on the buffer layer, the said active layer having an island shape; forming a gate insulation layer on the buffer layer to cover the polycrystalline-silicon active layer; forming a first metal layer on the gate insulation layer; forming a second metal layer on the first metal layer; patterning the first and second metal layer to form a gate electrode, a gate line and a gate shorting bar; forming a source contact area and a drain contact area at both sides of the polycrystalline-silicon active layer; forming an interlayer insulator on the gate insulation layer to cover the patterned first and second metal layers; patterning the interlayer insulator and the gate insulation layer so as to form a first contact hole to the source contact area and the second contact hole to a drain contact area, patterning a portion of the interlayer insulator on the gate shorting bar so as to form an etching hole, eliminating a portion of the first layer of the gate insulation layer under the etching hole, and forming a bridge portion in the second layer of the gate insulation layer under the etching hole; forming a third metal layer on the gate insulation layer and on the bridge portion; patterning the third metal layer so as to form a source electrode and a drain electrode, and removing the bridge portion when patterning the third metal layer; and forming a passivation layer on the interlayer insulator and on the patterned third metal layer.
摘要翻译：通过以下步骤制造用于液晶显示装置的阵列基板：在基板上形成缓冲层; 在所述缓冲层上形成多晶硅有源层，所述有源层具有岛状; 在所述缓冲层上形成栅极绝缘层以覆盖所述多晶硅有源层; 在栅绝缘层上形成第一金属层; 在所述第一金属层上形成第二金属层; 图案化第一和第二金属层以形成栅电极，栅极线和栅极短路棒; 在所述多晶硅活性层的两侧形成源极接触区域和漏极接触区域; 在所述栅极绝缘层上形成层间绝缘体以覆盖所述图案化的第一和第二金属层; 图案化层间绝缘体和栅极绝缘层，以形成到源极接触区域和第二接触孔到漏极接触区域的第一接触孔，图案化栅极短路棒上的层间绝缘体的一部分，从而形成蚀刻孔，去除蚀刻孔下面的栅极绝缘层的第一层的一部分，并且在蚀刻孔的下面的栅极绝缘层的第二层中形成桥接部分; 在所述栅极绝缘层和所述桥接部分上形成第三金属层; 图案化第三金属层以形成源电极和漏电极，并且在图案化第三金属层时去除桥接部分; 以及在层间绝缘体上和图案化的第三金属层上形成钝化层。

3. 发明授权

US06753934B2 Array substrate for a liquid crystal display device and a manufacturing method thereof 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US06753934B2
公开(公告)日：2004-06-22
申请号：US10206356
申请日：2002-07-29
申请人： Jae-Deok Park , Yong Min Ha
发明人： Jae-Deok Park , Yong Min Ha
IPC分类号： G02F11343
CPC分类号： G02F1/13458 , G02F1/133555 , G02F1/136213 , G02F1/136227
摘要： An array substrate for a transflective liquid crystal display device includes a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode; a gate line connected to the gate electrode; a data line connected to the source electrode, the data line defining a pixel region with the gate line; an active extension portion extending from the active layer to the pixel region, a first insulating layer on the active extension portion; a storage electrode on the first insulating layer over the active extension portion; a second insulating layer on the storage electrode; a reflective plate on the second insulating layer over the storage electrode, the reflective plate extending over one end of the data line and connected to an adjacent reflective plate; a third insulating layer on the reflective plate; and a pixel electrode on the third insulating layer, the pixel electrode extending over one end of the data line and connected to the drain electrode.
摘要翻译：一种半透射型液晶显示装置的阵列基板，包括：基板; 薄膜晶体管，其包括有源层，栅电极，源电极和漏电极; 连接到栅电极的栅极线; 连接到所述源电极的数据线，所述数据线限定具有所述栅极线的像素区域; 从所述有源层延伸到所述像素区域的有源延伸部分，所述有源延伸部分上的第一绝缘层; 在所述有源延伸部分上的所述第一绝缘层上的存储电极; 在所述存储电极上的第二绝缘层; 所述反射板在所述第二绝缘层上方的所述存储电极上，所述反射板在所述数据线的一端延伸并连接到相邻的反射板; 反射板上的第三绝缘层; 以及在所述第三绝缘层上的像素电极，所述像素电极在所述数据线的一端延伸并连接到所述漏电极。

4. 发明授权

US06429485B1 Thin film transistor and method of fabricating thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06429485B1
公开(公告)日：2002-08-06
申请号：US09192050
申请日：1998-11-13
申请人： Yong-Min Ha , Jae-Deok Park
发明人： Yong-Min Ha , Jae-Deok Park
IPC分类号： H01L2701
CPC分类号： H01L27/1237 , H01L27/1214 , H01L27/127 , H01L29/78621
摘要： A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.
摘要翻译：薄膜晶体管（TFT）具有轻掺杂漏极，其包括重掺杂区域和轻掺杂区域。轻掺杂漏极通过具有不同厚度的栅极绝缘层的单一掺杂工艺同时形成。通过在绝缘基板上形成有源层，在有源层上形成绝缘层，在绝缘层上形成导电层，在导电层上形成光致抗蚀剂图案，通过过蚀刻导电通过使用光致抗蚀剂图案作为掩模。然后通过使用光致抗蚀剂图案作为掩模来部分蚀刻第一绝缘层。结果，与光致抗蚀剂图案重叠的第一绝缘层的部分比不与光致抗蚀剂图案重叠的其它部分厚。当整个TFT被诱导到杂质时，大部分在较厚的绝缘区下面的有源区形成轻掺杂的漏极。

5. 发明申请

US20070263142A1 Transflective liquid crystal display device 有权
标题翻译：透反式液晶显示装置
公开(公告)号：US20070263142A1
公开(公告)日：2007-11-15
申请号：US11880731
申请日：2007-07-23
申请人： Jae-Deok Park
发明人： Jae-Deok Park
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227
摘要： A transflective liquid crystal display device includes a first substrate including transmissive and reflective pixels. Gate and data lines on the first substrate cross each other to define a pixel region, with a thin film transistor at each crossing. The transmissive and reflective pixels correspond to respective pixel regions. A first passivation layer covers the thin film transistor and has a transmissive hole in the transmissive pixel. A first reflector is disposed on the first passivation layer in the reflective pixel. A second passivation layer is disposed on the first reflector and in the transmissive hole. A pixel electrode on the second passivation layer is connected to the thin film transistor. A second substrate opposing the first substrate has a color filter layer on an inner surface thereof. The color filter layer contains R, G and B sub color filters, which each correspond to a pixel region.
摘要翻译：半透射型液晶显示装置包括包括透射和反射像素的第一基板。第一衬底上的栅极和数据线彼此交叉以限定像素区域，每个交叉处具有薄膜晶体管。透射和反射像素对应于各个像素区域。第一钝化层覆盖薄膜晶体管并且在透射像素中具有透射孔。第一反射器设置在反射像素中的第一钝化层上。第二钝化层设置在第一反射器和透射孔中。第二钝化层上的像素电极连接到薄膜晶体管。与第一基板相对的第二基板在其内表面上具有滤色器层。滤色器层包含R，G和B子滤色器，其分别对应于像素区域。

6. 发明授权

US07280174B2 Transflective liquid crystal display and method of fabricating the same 有权
标题翻译：反射式液晶显示器及其制造方法
公开(公告)号：US07280174B2
公开(公告)日：2007-10-09
申请号：US10825714
申请日：2004-04-14
申请人： Jae-Deok Park , Hun Jeoung , Soon-Kwang Hong
发明人： Jae-Deok Park , Hun Jeoung , Soon-Kwang Hong
IPC分类号： G02F1/1368 , G02F1/1335
CPC分类号： G02F1/133555 , G02F2001/134345
摘要： A transflective liquid crystal display includes gate and data lines perpendicular to each other and defining a plurality of unit pixels. Each unit pixel includes a plurality of sub-pixel regions, which each have a transmissive portions and a reflective portion. The transmissive portions are gathered together within each unit pixel at corners of the sub-pixel regions opposing corners in which thin film transistors near the crossings of the gate and data lines are disposed. A passivation layer covering the thin film transistors and the gate and data lines has an opening that corresponds to the transmissive portions in the unit pixel. A reflector is formed over the passivation layer in each sub-pixel region and corresponds in position to the reflective portion. A pixel electrode in each sub-pixel region contacts the thin film transistor through a contact hole in the passivation layer.
摘要翻译：透反液晶显示器包括彼此垂直并限定多个单位像素的栅极和数据线。每个单位像素包括多个子像素区域，每个子像素区域具有透射部分和反射部分。透射部分在与位于栅极和数据线的交叉点附近的薄膜晶体管相对的角部的子像素区域的拐角处的每个单位像素内聚集在一起。覆盖薄膜晶体管和栅极和数据线的钝化层具有对应于单位像素中的透射部分的开口。在每个子像素区域中的钝化层之上形成反射器，并且在反射部分中对应于反射器。每个子像素区域中的像素电极通过钝化层中的接触孔与薄膜晶体管接触。

7. 发明授权

US07248316B2 Transflective liquid crystal display device 有权
公开(公告)号：US07248316B2
公开(公告)日：2007-07-24
申请号：US10813797
申请日：2004-03-30
申请人： Jae-Deok Park
发明人： Jae-Deok Park
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227
摘要： A transflective liquid crystal display device includes a first substrate including transmissive and reflective pixels. Gate and data lines on the first substrate cross each other to define a pixel region, with a thin film transistor at each crossing. The transmissive and reflective pixels correspond to respective pixel regions. A first passivation layer covers the thin film transistor and has a transmissive hole in the transmissive pixel. A first reflector is disposed on the first passivation layer in the reflective pixel. A second passivation layer is disposed on the first reflector and in the transmissive hole. A pixel electrode on the second passivation layer is connected to the thin film transistor. A second substrate opposing the first substrate has a color filter layer on an inner surface thereof. The color filter layer contains R, G and B sub color filters, which each correspond to a pixel region.

8. 发明授权

US06356319B1 Liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06356319B1
公开(公告)日：2002-03-12
申请号：US09629952
申请日：2000-08-01
申请人： Jae-Deok Park , Ju-Cheon Yeo
发明人： Jae-Deok Park , Ju-Cheon Yeo
IPC分类号： G02F1136
CPC分类号： H01L29/78603 , G02F1/136286 , G02F1/1368 , G02F2001/13629
摘要： The present invention discloses a liquid crystal display device including a first insulating substrate having: a) a buffer layer formed on the first substrate; b) an inter-layer insulating film formed on the buffer layer, the inter-layer insulating film having an etching portion, the etching portion is etched; c) a semiconductor island formed on a portion of the buffer layer corresponding to the etching portion; d) data lines formed on the semiconductor island; e) gate lines arranged in a direction perpendicular to the data lines; f) switching elements arranged near cross points of the gate and data lines, each of the switching element having a gate electrode, a source electrode and a drain electrode, the gate electrode extending from the gate line, the source electrode extending from the data line; and g) pixel electrodes formed on a region defined by the gate and data lines, the pixel electrode connecting with the drain electrode, the pixel electrode overlapping an end portion of the data line, the adjacent two pixel electrodes spaced apart from each other; a second insulating substrate having a color filter; and a liquid crystal layer interposed between the first and second insulating substrates.
摘要翻译：本发明公开了一种液晶显示装置，包括：第一绝缘基板，具有：a）形成在第一基板上的缓冲层; b）形成在所述缓冲层上的层间绝缘膜，所述层间绝缘膜具有蚀刻部分，蚀刻所述蚀刻部分; c）形成在对应于蚀刻部分的缓冲层的一部分上的半导体岛; d）形成在半导体岛上的数据线; e）沿垂直于数据线的方向布置的栅极线; f）布置在栅极和数据线的交叉点附近的开关元件，每个开关元件具有栅电极，源电极和漏电极，栅电极从栅极线延伸，源电极从数据线延伸 ; 以及g）形成在由栅极和数据线限定的区域上的像素电极，与漏电极连接的像素电极，与数据线的端部重叠的像素电极，彼此间隔开的相邻的两个像素电极; 具有滤色器的第二绝缘基板; 以及插入在第一和第二绝缘基板之间的液晶层。

9. 发明申请

US20050018114A1 Transflective liquid crystal display and method of fabricating the same 有权
标题翻译：反射式液晶显示器及其制造方法
公开(公告)号：US20050018114A1
公开(公告)日：2005-01-27
申请号：US10825714
申请日：2004-04-14
申请人： Jae-Deok Park , Hun Jeoung , Soon-Kwang Hong
发明人： Jae-Deok Park , Hun Jeoung , Soon-Kwang Hong
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1368
CPC分类号： G02F1/133555 , G02F2001/134345
摘要： A transflective liquid crystal display includes gate and data lines perpendicular to each other and defining a plurality of unit pixels. Each unit pixel includes a plurality of sub-pixel regions, which each have a transmissive portions and a reflective portion. The transmissive portions are gathered together within each unit pixel at corners of the sub-pixel regions opposing corners in which thin film transistors near the crossings of the gate and data lines are disposed. A passivation layer covering the thin film transistors and the gate and data lines has an opening that corresponds to the transmissive portions in the unit pixel. A reflector is formed over the passivation layer in each sub-pixel region and corresponds in position to the reflective portion. A pixel electrode in each sub-pixel region contacts the thin film transistor through a contact hole in the passivation layer.
摘要翻译：透反液晶显示器包括彼此垂直并限定多个单位像素的栅极和数据线。每个单位像素包括多个子像素区域，每个子像素区域具有透射部分和反射部分。透射部分在与位于栅极和数据线的交叉点附近的薄膜晶体管相对的角部的子像素区域的拐角处的每个单位像素内聚集在一起。覆盖薄膜晶体管和栅极和数据线的钝化层具有对应于单位像素中的透射部分的开口。在每个子像素区域中的钝化层之上形成反射器，并且在反射部分中对应于反射器。每个子像素区域中的像素电极通过钝化层中的接触孔与薄膜晶体管接触。

10. 发明授权

US06589826B2 Thin film transistor and a method of forming the same 有权
公开(公告)号：US06589826B2
公开(公告)日：2003-07-08
申请号：US10196292
申请日：2002-07-17
申请人： Jae-Deok Park
发明人： Jae-Deok Park
IPC分类号： H01L2100
CPC分类号： H01L27/12 , H01L29/78621 , H01L29/78645
摘要： A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-channel region; sequentially forming a second insulating layer and a first conductive layer over the first insulating layer; patterning the second insulating layer and the first conductive layer to form a gate insulating layer and gate electrode on a channel region of the active layer, and to form a sub-gate insulating layer and associated sub-gate electrode on each sub-channel region of the active layer; forming a mask covering at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region of the active region; and implanting impurities into exposed portions of the active region using the mask to form a source region on a first side of the channel region and a drain region on a second side of the channel region such that each sub-gate region is disposed between the channel region and one of the drain region and the source region.

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