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1. 发明申请

WO2013085815A1 ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：具有多个记忆状态的基于抗病毒剂的记忆细胞及其形成方法
公开(公告)号：WO2013085815A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/067316
申请日：2012-11-30
申请人： SANDISK 3D, LLC
发明人： BANDYOPADHYAY, Abhijit , SCHEUERLEIN, Roy E. , RABKIN, Peter
IPC分类号： H01L49/02 , G11C17/16 , G11C11/56 , H01L27/102 , H01L27/10 , H01L23/525 , G11C17/18
CPC分类号： H01L28/40 , G11C11/5692 , G11C17/165 , G11C17/18 , H01L23/5252 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/10 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A memory cell is provided that includes a steering element (14) and a metal-insulator-metal ("MIM") stack (30g) coupled in series with the steering element. The MIM stack includes a first dielectric material layer (12a) a second dielectric material layer (12b) and an optional third dielectric material layer (12c) disposed on the first dielectric material layer, without a metal or other conductive layer disposed between the dielectric material layers. The memory cell can programmed into different states by progressive! breaking down the dielectric layers.
摘要翻译：提供了一种存储单元，其包括与转向元件串联耦合的转向元件（14）和金属 - 绝缘体 - 金属（“MIM”）堆叠（30g）。 MIM堆叠包括第一介电材料层（12a），第二电介质材料层（12b）和设置在第一介电材料层上的任选的第三介电材料层（12c），而没有金属或其它导电层设置在电介质材料之间层。存储单元可以通过渐进式编程到不同的状态！分解电介质层。

2. 发明公开

EP2583323A2 COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS 有权转让
标题翻译：细胞与电阻开关层：组成
公开(公告)号：EP2583323A2
公开(公告)日：2013-04-24
申请号：EP11729217.7
申请日：2011-06-10
申请人： Sandisk 3D LLC
发明人： KREUPL, Franz , BANDYOPADHYAY, Abhijit , CHEN, Yung-Tin , FU, Chu-Chen , JAYASEKARA, Wipul, Pemsiri , KAI, James , MAKALA, Raghuveer, S. , RABKIN, Peter , SAMACHISA, George , ZHANG, Jingyan
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.

3. 发明申请

WO2015035038A1 VERTICAL BIT LINE WIDE BAND GAP TFT SELECTION TRANSISTOR OF A 3D RRAM 审中-公开
标题翻译：三维RRAM的垂直位线宽带带隙选择晶体管
公开(公告)号：WO2015035038A1
公开(公告)日：2015-03-12
申请号：PCT/US2014/054080
申请日：2014-09-04
申请人： SANDISK 3D LLC
发明人： RABKIN, Peter , HIGASHITANI, Masaaki
IPC分类号： G11C13/00 , H01L29/786 , H01L27/24
CPC分类号： H01L27/2454 , G11C13/0026 , G11C13/003 , G11C13/0033 , G11C2213/71 , G11C2213/77 , H01L21/02403 , H01L21/02565 , H01L27/124 , H01L27/1259 , H01L27/127 , H01L27/2481 , H01L27/249 , H01L29/24 , H01L29/66969 , H01L29/78642 , H01L29/7869 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/10 , H01L45/1226 , H01L45/1266 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16
摘要： A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is disclosed. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HflnZnO, or ZnlnSnO body. The source and drains can also be formed from the wide energy band gap semiconductor, although these may be doped for better conduction. The vertically oriented TFT selection device serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device has a high drive current, a high breakdown voltage and low leakage current.
摘要翻译：公开了具有由宽能带隙半导体形成的主体的垂直取向的薄膜晶体管（TFT）选择装置的3D存储器阵列。宽能带隙半导体可以是诸如金属氧化物半导体的氧化物半导体。例如，这可以是InGaZnO，InZnO，HflnZnO或ZnInSnO体。源极和漏极也可以由宽能带隙半导体形成，尽管这些可以被掺杂以便更好地传导。垂直取向的TFT选择装置用作3D存储器阵列中的垂直位线选择装置。垂直TFT选择装置具有高驱动电流，高击穿电压和低漏电流。

4. 发明申请

WO2014137652A3 VERTICAL BIT LINE TFT DECODER FOR HIGH VOLTAGE OPERATION 审中-公开
公开(公告)号：WO2014137652A3
公开(公告)日：2014-09-12
申请号：PCT/US2014/018125
申请日：2014-02-25
申请人： SANDISK 3D LLC
发明人： RABKIN, Peter , HIGASHITANI, Masaaki
IPC分类号： H01L27/24 , H01L29/786 , H01L27/105 , H01L27/115 , G11C13/00 , H01L45/00
摘要： A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a channel extension, otherwise referred to as a gate/junction offset, is disclosed. The vertically oriented TFT selection device with channel extension serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device having a channel extension has a high breakdown voltage and low leakage current. The channel extension can be at the top junction or bottom junction of the TFT. Depending on whether the memory elements undergo a forward FORM or reverse FORM, either the bottom or top junction can have the channel extension. This provides for a high voltage junction where needed.

5. 发明申请

WO2012067738A1 MEMORY SYSTEM WITH REVERSIBLE RESISTIVITY-SWITCHING USING PULSES OF ALTERNATE POLARITY 审中-公开
标题翻译：具有可逆电阻切换的存储器系统使用备用极性脉冲
公开(公告)号：WO2012067738A1
公开(公告)日：2012-05-24
申请号：PCT/US2011/056130
申请日：2011-10-13
申请人： SANDISK 3D LLC , RABKIN, Peter , SAMACHISA, George , SCHEUERLEIN, Roy, E.
发明人： RABKIN, Peter , SAMACHISA, George , SCHEUERLEIN, Roy, E.
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2013/0092
摘要： A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.
摘要翻译：存储器系统包括多个非易失性存储元件，每个非易失性存储元件包括与可逆电阻切换材料串联的二极管（或其他转向装置）。存储器系统中的一个或多个电路通过将一个或多个非易失性存储元件的可逆电阻切换材料改变为第一电阻状态而对非易失性存储元件进行编程。存储系统还可以将一个或多个非易失性存储元件的可逆电阻切换材料从第一电阻状态改变到第二电阻状态，通过将一对或多对相反极性的电压条件（例如，脉冲）施加到相应的二极管（或其他转向装置）使得电流在二极管（或其他转向装置）中流动，而不会在击穿情况下操作二极管（或其他转向装置）。

6. 发明申请

WO2011159583A2 COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS 审中-公开
标题翻译：具有电阻切换层的记忆体组成
公开(公告)号：WO2011159583A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040105
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL, Franz , BANDYOPADHYAY, Abhijit , CHEN, Yung-Tin , FU, Chu-Chen , JAYASEKARA, Wipul, Pemsiri , KAI, James , MAKALA, Raghuveer, S. , RABKIN, Peter , SAMACHISA, George , ZHANG, Jingyan
发明人： KREUPL, Franz , BANDYOPADHYAY, Abhijit , CHEN, Yung-Tin , FU, Chu-Chen , JAYASEKARA, Wipul, Pemsiri , KAI, James , MAKALA, Raghuveer, S. , RABKIN, Peter , SAMACHISA, George , ZHANG, Jingyan
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

7. 发明申请

WO2010036618A1 MIIM DIODES 审中-公开
标题翻译： MIIM二极管
公开(公告)号：WO2010036618A1
公开(公告)日：2010-04-01
申请号：PCT/US2009/057701
申请日：2009-09-21
申请人： SANDISK 3D LLC , SEKAR, Deepak, C. , KUMAR, Tanmay , RABKIN, Peter , CHEN, Xiying
发明人： SEKAR, Deepak, C. , KUMAR, Tanmay , RABKIN, Peter , CHEN, Xiying
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/2418 , H01L45/00 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/149
摘要： A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises a first electrode comprising a first metal, a first region comprising a first insulating material, a second region comprising a second insulating material, and a second electrode comprising a second metal. The first region and the second region reside between the first electrode and the second electrode. The second insulating material is doped with nitrogen. Note that the second insulating material may have an interface with either the first electrode or the second electrode.
摘要翻译：公开了一种金属绝缘体二极管。在一个方面，金属 - 绝缘体二极管包括包括第一金属的第一电极，包括第一绝缘材料的第一区域，包括第二绝缘材料的第二区域和包括第二金属的第二电极。第一区域和第二区域位于第一电极和第二电极之间。第二绝缘材料掺杂氮气。注意，第二绝缘材料可以具有与第一电极或第二电极的界面。

8. 发明申请

WO2010036616A1 MIIM DIODES HAVING STACKED STRUCTURE 审中-公开
标题翻译：具有堆叠结构的MIIM二极管
公开(公告)号：WO2010036616A1
公开(公告)日：2010-04-01
申请号：PCT/US2009/057696
申请日：2009-09-21
申请人： SANDISK 3D LLC , SEKAR, Deepak, C. , KUMAR, Tanmay , RABKIN, Peter , PING, Er-xuan , CHEN, Xiying
发明人： SEKAR, Deepak, C. , KUMAR, Tanmay , RABKIN, Peter , PING, Er-xuan , CHEN, Xiying
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/00 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/144 , H01L45/149
摘要： A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arranged as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench. A memory element can further be in contact with one of the electrodes, preferably also within the trench.
摘要翻译：公开了一种金属绝缘体二极管。在一个方面，金属绝缘体二极管包括第一和第二电极以及如下布置的第一和第二绝缘体。绝缘区域中形成有沟槽。沟槽有一个底部和侧壁。第一电极包括第一金属，位于沟槽的侧壁和底部的上方。第一绝缘体具有与第一电极的第一界面。第一绝缘体的至少一部分在沟槽内。第二绝缘体具有与第一绝缘体的第二接口。第二绝缘体的至少一部分在沟槽内。包括第二金属的第二电极与第二绝缘体接触。第二电极至少部分地填充沟槽。存储元件还可以与电极之一进一步接触，优选也在沟槽内。

9. 发明申请

WO2012067737A1 MEMORY SYSTEM WITH REVERSIBLE RESISTIVITY- SWITCHING USING PULSES OF ALTERNATE POLARITY 审中-公开
标题翻译：具有可逆电阻的存储器系统 - 使用替代极性脉冲切换
公开(公告)号：WO2012067737A1
公开(公告)日：2012-05-24
申请号：PCT/US2011/056126
申请日：2011-10-13
申请人： SANDISK 3D LLC , SAMACHISA, George , RABKIN, Peter , SCHEUERLEIN, Roy, E.
发明人： SAMACHISA, George , RABKIN, Peter , SCHEUERLEIN, Roy, E.
IPC分类号： G11C13/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2013/0092 , G11C2213/72
摘要： A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.
摘要翻译：存储器系统包括多个非易失性存储元件，每个非易失性存储元件包括与可逆电阻切换材料串联的二极管（或其他转向装置）。存储器系统中的一个或多个电路通过将一个或多个非易失性存储元件的可逆电阻切换材料改变为第一电阻状态而对非易失性存储元件进行编程。存储系统还可以将一个或多个非易失性存储元件的可逆电阻切换材料从第一电阻状态改变到第二电阻状态，通过将一对或多对相反极性的电压条件（例如，脉冲）施加到相应的二极管（或其他转向装置）使得电流在二极管（或其他转向装置）中流动，而不会在击穿情况下操作二极管（或其他转向装置）。

10. 发明授权

EP2583323B1 COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS 有权转让
标题翻译：细胞与电阻开关层：组成
公开(公告)号：EP2583323B1
公开(公告)日：2016-04-20
申请号：EP11729217.7
申请日：2011-06-10
申请人： SanDisk 3D LLC
发明人： KREUPL, Franz , BANDYOPADHYAY, Abhijit , CHEN, Yung-Tin , FU, Chu-Chen , JAYASEKARA, Wipul, Pemsiri , KAI, James , MAKALA, Raghuveer, S. , RABKIN, Peter , SAMACHISA, George , ZHANG, Jingyan
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146

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