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1. 发明申请

US20040242446A1 Cleaning agent including a corrosion inhibitor used in a process of forming a semiconductor device 审中-公开
标题翻译：包括用于形成半导体器件的工艺中的腐蚀抑制剂的清洁剂
公开(公告)号：US20040242446A1
公开(公告)日：2004-12-02
申请号：US10774783
申请日：2004-02-09
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Chang-Sup Mun , Sang-Jun Choi , Woo-Sung Han , Chang-Ki Hong
IPC分类号： C11D001/00
CPC分类号： C11D3/042 , C11D3/0073 , C11D3/044 , C11D3/164 , C11D3/2075 , C11D11/0047
摘要： A cleaning solution having a corrosion inhibitor and a surfactant is disclosed. The corrosion inhibitor is represented by formula 1 and the surfactant is represented by the formula 2 as follows: R1nullR2nullCnullCnullR3nullR4nullnull R5null(CH2)K-Anullnull In formula 1, any one of R1 and R4 is a hydroxyl group (nullOH) and the other is hydrogen (nullH), a halogen element (nullX) or one functional group selected from the group consisting of alkyl (nullR) group, alkoxy (ROnull) group, amino (nullNH2) group, nitro (nullNO2) group, mercapto (nullSH) group, hydroxyl (nullOH) group, aldehyde (nullCHO) group and carboxyl (nullCOOH) group. R2 and R3 are hydrocarbons having 0 to 10 carbons including a straight or a branched structure. In formula 2, R5 is methyl group and K is an integer ranging from 3 to 22. A is HO(CH2CH2O)L(CH(CH3)CH2O)M or hydroxyl group, and L and M are integers ranging from 0 to 15.
摘要翻译：公开了具有腐蚀抑制剂和表面活性剂的清洁溶液。腐蚀抑制剂由式1表示，表面活性剂由式2表示如下：R1-R2-C = C-R3-R4 <式1> R5-（CH2）KA <式2>在式1中，任何 R 1和R 4中的一个是羟基（-OH），另一个是氢（-H），卤素元素（-X）或一个选自烷基（-R）基团，烷氧基（RO - ）基，氨基（-NH 2）基，硝基（-NO 2）基，巯基（-SH）基，羟基（-OH）基，醛（-CHO）基和羧基（-COOH） R2和R3是包括直链或支链结构的具有0至10个碳的烃。式2中，R 5为甲基，K为3〜22的整数.A为HO（CH 2 CH 2 O）L（CH（CH 3）CH 2 O）M或羟基，L和M为0〜15的整数。

2. 发明申请

US20040018451A1 Photoresist developer-soluble organic bottom antireflective composition and photolithography and etching process using the same 审中-公开
标题翻译：光致抗蚀剂显影剂可溶性有机底部防反射组合物和使用其的光刻和蚀刻工艺
公开(公告)号：US20040018451A1
公开(公告)日：2004-01-29
申请号：US10400029
申请日：2003-03-26
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi
IPC分类号： G03F007/20 , G03F007/40 , G03F007/30 , G03F007/038
CPC分类号： G03F7/091
摘要： An organic bottom antireflective composition containing an aromatic polymer compound, a thermal cross-linking agent, and an organic solvent is provided. The aromatic polymer compound has a functional group that absorbs exposure light of a short wavelength of less than about 248 nm and is thermally cross-linkable and de-crosslinkable by acid hydrolysis. The thermal cross-linking agent causes a thermal cross-linking reaction by reacting with the functional group of the aromatic polymer compound. The organic bottom antireflective composition is soluble in a photoresist developer. When the organic bottom antireflective composition is-applied to a photolithography and etching process, a layer formed of the organic bottom antireflective composition can be developed together with a photoresist layer into a pattern in a development process following photoresist exposure and baking processes. As a result, the photolithography and etching process can be simplified, the initial thickness of deposition of the photoresist layer can be reduced, and a processing margin in etching increases.
摘要翻译：提供了含有芳族聚合物化合物，热交联剂和有机溶剂的有机底部抗反射组合物。芳族聚合物化合物具有吸收短波长小于约248nm的曝光光的官能团，并且通过酸水解可热交联和脱交联。热交联剂通过与芳族聚合物化合物的官能团反应引起热交联反应。有机底部抗反射组合物可溶于光致抗蚀剂显影剂。当将有机底部抗反射组合物应用于光刻和蚀刻工艺时，由有机底部抗反射组合物形成的层可以在光致抗蚀剂曝光和烘烤工艺之后的显影过程中与光致抗蚀剂层一起显影成图案。结果，可以简化光刻和蚀刻工艺，可以降低光致抗蚀剂层的初始沉积厚度，并且蚀刻中的处理裕度增加。

3. 发明申请

US20030235788A1 Negative resist composition comprising hydroxy-substituted base polymer and si-containing crosslinker having epoxy ring and a method for patterning semiconductor devices using the same 有权
标题翻译：包含羟基取代的基础聚合物和含有环氧环的含Si的交联剂的负型抗蚀剂组合物和使用其形成半导体器件的方法
公开(公告)号：US20030235788A1
公开(公告)日：2003-12-25
申请号：US10400097
申请日：2003-03-26
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi
IPC分类号： G03F007/075 , G03F007/40
CPC分类号： G03F7/095 , G03F7/0755 , G03F7/40 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146
摘要： A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.
摘要翻译：提供了一种负型抗蚀剂组合物和使用该组合物对半导体器件进行图案化的方法。负性抗蚀剂组合物含有碱溶性羟基取代的基础聚合物，具有环氧环的含硅交联剂和光酸产生剂。在用于图案化半导体器件的方法中，根据使用负光刻胶组合物的双层抗蚀剂工艺形成精细图案。

4. 发明申请

US20030232279A1 Negative resist composition comprising base polymer having epoxy ring and Si-containing crosslinker and patterning method for semiconductor device using the same 失效
标题翻译：包含具有环氧环的基础聚合物和含Si的交联剂的负型抗蚀剂组合物和使用其的半导体器件的图案化方法
公开(公告)号：US20030232279A1
公开(公告)日：2003-12-18
申请号：US10395914
申请日：2003-03-24
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi
IPC分类号： G03F007/038 , G03F007/20 , G03F007/38 , G03F007/40
CPC分类号： G03F7/0757 , G03F7/038 , G03F7/0385 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.
摘要翻译：提供了使用该组合物的半导体器件的负型抗蚀剂组合物和图案化方法。一方面，负性抗蚀剂组合物包含具有环氧环取代基的碱溶性基础聚合物，具有多个羟基的含硅交联剂和光酸产生剂。在另一方面，图案化方法包括在双层抗蚀剂工艺中使用负性抗蚀剂组合物以形成精细图案。

5. 发明申请

US20030224289A1 Photosensitive polymers and resist compositions containing the same 审中-公开
标题翻译：含有它们的光敏聚合物和抗蚀剂组合物
公开(公告)号：US20030224289A1
公开(公告)日：2003-12-04
申请号：US10417604
申请日：2003-04-17
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi , Woo-Sung Han , Sang-Gyun Woo
IPC分类号： G03F007/038
CPC分类号： G03F7/0395 , C08F216/1416 , G03F7/0397
摘要： A class of photosensitive polymers having special utility in a resist composition is disclosed, said polymers being prepared utilizing a vinyl oxy alkyl adamantane carboxylate monomer having a structural formula as shown below, the polymers having a weight average molecular weight in the range of about 3,000 to 50,000: 1 wherein x is an integer in the range of 2 to 6 inclusive. The photosensitive polymers of this invention include polymers having three or more monomer units and having the vinyl oxy alkyl adamantane carboxylate monomer polymerized with maleic acid anhydride and at least one monomer selected from the group consisting of a (meth)acrylate and norbornene derivative monomer.
摘要翻译：公开了一类在抗蚀剂组合物中具有特殊用途的光敏聚合物，所述聚合物使用具有如下结构式的乙烯基氧基烷基金刚烷羧酸酯单体制备，所述聚合物的重均分子量在约3,000至 50,000：其中x是2-6以下的整数。本发明的光敏聚合物包括具有三个或更多个单体单元并且具有与马来酸酐聚合的乙烯基氧基烷基金刚烷羧酸酯单体的聚合物和至少一种选自（甲基）丙烯酸酯和降冰片烯衍生物单体的单体。

6. 发明申请

US20030157430A1 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same 失效
标题翻译：具有水合物结构的含氟光敏聚合物和包含其的抗蚀剂组合物
公开(公告)号：US20030157430A1
公开(公告)日：2003-08-21
申请号：US10264429
申请日：2002-10-04
申请人： Samsung Electronics Co., Ltd.
发明人： Kwang-Sub Yoon , Ki-Yong Song , Sang-Jun Choi , Sang-Gyun Woo
IPC分类号： G03F007/038
CPC分类号： C08F232/08 , G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer. The photosensitive polymer has an average molecular weight of about 3,000-100,000 with a repeating unit including a group having one of structural formulae below: 1
摘要翻译：提供具有水合物结构的含氟光敏聚合物和包含光敏聚合物的抗蚀剂组合物。光敏聚合物的平均分子量约为3,000-100,000，重复单元包括具有以下结构式之一的基团：

7. 发明申请

US20040106064A1 Silicon-containing polymer, negative type resist composition comprising the same, and patterning method for semiconductor device using the same 有权
标题翻译：含硅聚合物，含有它们的负型抗蚀剂组合物和使用其的半导体器件的图案化方法
公开(公告)号：US20040106064A1
公开(公告)日：2004-06-03
申请号：US10702778
申请日：2003-11-06
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi
IPC分类号： G03C001/73 , G03C007/38 , G03C007/20 , G03C007/30 , G03C007/36
CPC分类号： C08F220/26 , C08F230/08 , G03F7/0382 , G03F7/0758 , G03F7/095 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146
摘要： A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula: 1 wherein R1 is a hydrogen atom or a methyl group, X is a C1-C4 alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.
摘要翻译：提供了用于具有含Si单体单元的第一重复单元，具有羟基或环氧环并与第一重复单元共聚的第二重复单元的负型抗蚀剂组合物的聚合物。第一重复单元由下式表示：其中R1是氢原子或甲基，X是C1-C4烷基或烷氧基，n是2-4的整数。另外，提供一个负的包括作为碱溶性基础聚合物的聚合物，光酸产生剂和在酸存在下可交联的交联剂。

8. 发明申请

US20040082170A1 Method for forming fine pattern of semiconductor device 有权
标题翻译：用于形成半导体器件精细图案的方法
公开(公告)号：US20040082170A1
公开(公告)日：2004-04-29
申请号：US10462448
申请日：2003-06-16
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi , Young-Mi Lee , Woo-Sung Han
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： G03F7/40 , H01L21/0275 , H01L21/0276
摘要： Provided is a method for forming a fine pattern of a semiconductor device by controlling the amount of flow of a resist pattern, including forming a resist pattern having a predetermined pattern distance on a material layer to be etched, forming a flow control barrier layer on the resist pattern to control the amount of flow during a subsequent resist flow process and to make the profile of the flowed pattern be vertical, optionally forming the flow control barrier layer by coating a material including a water-soluble high-molecular material and a crosslinking agent on the resist pattern, mixing and baking the coated material layer, and processing the resultant structure using deionized water, carrying out the flow resist process to form a hyperfine pattern and etching the lower material layer, and thereby forming fine patterns having the shape of contact holes or lines and spaces to have a critical dimension of about 100 nm or less, even with use of a KrF resist.
摘要翻译：提供了一种通过控制抗蚀剂图案的流动量来形成半导体器件的精细图案的方法，包括在待蚀刻的材料层上形成具有预定图案距离的抗蚀剂图案，在其上形成流动控制阻挡层抗蚀剂图案以控制随后的抗蚀剂流动过程期间的流量并使流动图案的轮廓垂直，任选地通过涂覆包括水溶性高分子材料和交联剂的材料形成流动控制阻挡层在抗蚀剂图案上，混合和烘烤涂覆材料层，并使用去离子水处理所得到的结构，进行流动阻挡工艺以形成超精细图案并蚀刻下部材料层，从而形成具有接触形状的精细图案空穴或线和空间具有约100nm或更小的临界尺寸，即使使用KrF抗蚀剂。

9. 发明申请

US20020076641A1 Photosensitive polymer having fused aromatic ring and photoresist composition containing the same 失效
标题翻译：具有稠合芳族环的光敏聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US20020076641A1
公开(公告)日：2002-06-20
申请号：US09888912
申请日：2001-06-25
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi , Yool Kang
IPC分类号： G03F007/038
CPC分类号： G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A photosensitive polymer having a protecting group including a fused aromatic ring, and a photoresist composition including the photosensitive polymer are provided. The photosensitive polymer has an acid-labile protecting group at its polymer backbone, the acid-labile protecting group including a fused aromatic ring having formula: 1 where R1 is hydrogen atom or alkyl group having from 1 to 4 carbon atoms; X is hydrogen atom, halogen, alkyl, or alkoxy; and y is an integer from 1 to 3, wherein the fused aromatic ring is a liner ring or branched ring with y greater than or equal to 2. A photoresist composition is also provided which includes the photosensitive polymer and a photoacid generator(PAG).
摘要翻译：提供了具有包含稠合芳环的保护基的光敏聚合物和包含该光敏聚合物的光致抗蚀剂组合物。光敏聚合物在其聚合物主链上具有酸不稳定的保护基，酸不稳定保护基包括具有下式的稠合芳环：其中R 1是氢原子或具有1至4个碳原子的烷基; X是氢原子，卤素，烷基或烷氧基; y为1〜3的整数，其中稠合芳香环为y大于或等于2的衬垫环或分支环。还提供光致抗蚀剂组合物，其包含光敏聚合物和光酸产生剂（PAG）。

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