专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007053362A Manufacture method of nonvolatile memory device 审中-公开
标题翻译：非易失性存储器件的制造方法
公开(公告)号：JP2007053362A
公开(公告)日：2007-03-01
申请号：JP2006217337
申请日：2006-08-09
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEONG YOUNG-CHEON , KWON CHUL-SOON , YU JAE-MIN , PARK ZAIGEN , RIM JI-WOON , YOON IN-GU
IPC分类号： H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/105 , H01L27/11526 , H01L27/11543 , H01L29/42324
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a split-gate nonvolatile memory device.
SOLUTION: A first gate insulating film and a first conductive film are formed on a substrate, and an oxide film pattern is formed by oxidizing the conductive film partially. A floating gate electrode is formed on the first gate insulating film through a process of partly etching the first conductive film by using the oxide film pattern as an etching mask. After a first silicon film is formed on all the surface of the substrate where the floating gate electrode is formed, a tunnel insulating film and a second gate insulating film are formed on the side of the floating gate electrode and a part of the surface of the substrate adjacent to the floating gate electrode respectively by oxidizing the first silicon film. A control gate electrode is formed on the tunnel insulating film and the second gate insulating film. A second silicon film is formed on all the surface of the substrate where the control gate electrode is formed, and the second silicon film is turned to a thermal oxide film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种制造分离式非易失性存储装置的方法。解决方案：在基板上形成第一栅极绝缘膜和第一导电膜，并且部分地氧化导电膜形成氧化物膜图案。通过使用氧化膜图案作为蚀刻掩模，部分地蚀刻第一导电膜的工艺，在第一栅极绝缘膜上形成浮栅电极。在形成浮栅的衬底的所有表面上形成第一硅膜之后，在浮栅电极的一侧形成隧道绝缘膜和第二栅绝缘膜，通过氧化第一硅膜分别与浮置栅电极相邻的衬底。在隧道绝缘膜和第二栅极绝缘膜上形成控制栅电极。在形成控制栅极的基板的所有表面上形成第二硅膜，并将第二硅膜转变为热氧化膜。版权所有（C）2007，JPO＆INPIT

IPRDB

热门服务

关于我们

友情链接

联系方式