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1. 发明专利

JP2008160113A Non-volatile memory device and method of operating the same 审中-公开
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：JP2008160113A
公开(公告)日：2008-07-10
申请号：JP2007325241
申请日：2007-12-17
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： HYUN JAE-WOONG , BOKU KEISAN , PARK YOON-DONG , KIM WON-JOO , JIN YOUNG-GU , KIM SUK-PIL , CHO KYOUNG-LAE , LEE JUNG-HOON , SONG SEUNG-HWAN
IPC分类号： H01L21/8247 , G11C16/04 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , B82Y10/00 , G11C16/0483 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L27/1203
摘要： PROBLEM TO BE SOLVED: To provide a non volatile memory device having a thre dimensional structure and a method of operating the same for storing data using a charge storage layer. SOLUTION: The non volatile memory device has a semiconductor layer 105, a plurality of upper control gate electrode 130a arranged on the semiconductor layer 105, a plurality of lower control gate electrode 130b arranged under the semiconductor layer 105 alternatively with the plurality of upper control gate electrode 130a, a plurality of control gate electrode 120a interposed between the semiconductor layer 105 and the upper control gate 130a respectively, a plurality of lower charge storage layer 120b interposed between the semiconductor layer 105 and the lower control gate electrode 130b. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有三维结构的非易失性存储器件及其操作方法，用于使用电荷存储层存储数据。解决方案：非易失性存储器件具有半导体层105，布置在半导体层105上的多个上控制栅电极130a，与半导体层105交替布置在半导体层105下方的多个下控制栅电极130b 上部控制栅极电极130a，分别介于半导体层105和上部控制栅极130a之间的多个控制栅电极120a，介于半导体层105和下部控制栅电极130b之间的多个下部电荷存储层120b。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2011008220A Sealant, display having the same, and method for manufacturing the display 审中-公开
标题翻译：密封剂，显示器，以及制造显示器的方法
公开(公告)号：JP2011008220A
公开(公告)日：2011-01-13
申请号：JP2010056992
申请日：2010-03-15
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE JUN-HYUP , JUNG JI-YOON , LEE JUNG-HOON , LYU JAE-JIN , KYO SEIKYOKU
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： G02F1/1339
摘要： PROBLEM TO BE SOLVED: To provide a sealant, a display having the sealant, and a method for manufacturing the display.SOLUTION: The sealant contains a photoinitiator containing an oxime ester compound, a curable resin, a curing agent, a coupling agent, a filler and the like. The display includes a first substrate, a second substrate opposite to the first substrate, a liquid crystal interposed between the first substrate and the second substrate, and a sealing pattern formed along the peripheral part of the first substrate and joining the first substrate and the second substrate together. The sealing pattern is formed by curing a sealant. The method for manufacturing the display includes forming a sealing pattern by applying a sealant having the photoinitiator containing the oxime ester compound along a peripheral part of the first substrate, dropping a liquid crystal onto the first substrate, disposing the second substrate on the first substrate so as to be opposed to the first substrate, and joining the first substrate to the second substrate by the sealing pattern.
摘要翻译：要解决的问题：提供一种密封剂，具有该密封剂的显示器以及该显示器的制造方法。解决方案：密封剂含有含有肟酯化合物的光引发剂，固化性树脂，固化剂，偶联剂，填料等。显示器包括第一基板，与第一基板相对的第二基板，插入在第一基板和第二基板之间的液晶，以及沿着第一基板的周边部分形成并将第一基板和第二基板接合的密封图案衬底在一起。通过固化密封剂形成密封图案。制造显示器的方法包括通过沿着第一基板的周边部分施加具有含有肟酯化合物的光引发剂的密封剂来形成密封图案，将液晶滴落到第一基板上，将第二基板设置在第一基板上与第一基板相对，并且通过密封图案将第一基板接合到第二基板。

3. 发明专利

JP2009004751A Non-volatile memory element and method for manufacturing the same 审中-公开
标题翻译：非挥发性记忆元件及其制造方法
公开(公告)号：JP2009004751A
公开(公告)日：2009-01-08
申请号：JP2008125228
申请日：2008-05-12
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE TAKI , HYUN JAE-WOONG , PARK JU-HEE , YOO IN-KYEONG , PARK YOON-DONG , KIM WON-JOO , LEE JUNG-HOON
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42336
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory that can be highly integrated with high reliability in operation and a method for manufacturing the same.
SOLUTION: In the non-volatile memory element, a semiconductor substrate has a pair of sidewall channel regions that are disposed upwardly and are mutually opposed. A floating gate electrode fills a pair of the sidewall channel regions and is protruded on the semiconductor substrate. A control gate electrode is disposed on the semiconductor substrate so as to cover a part of the floating gate electrode. At least a pair of the sidewall channel regions are disposed as mutually opposed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可以高度集成并具有高操作可靠性的非易失性存储器及其制造方法。解决方案：在非易失性存储元件中，半导体衬底具有一对侧壁沟槽区域，该侧壁沟道区域向上设置并相互相对。浮栅电极填充一对侧壁沟道区，并突出在半导体衬底上。控制栅电极设置在半导体衬底上以覆盖浮栅电极的一部分。至少一对侧壁沟道区域相互相对设置。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007251177A Nonvolatile memory element having pair of fins limited in void, and method of manufacturing the same 审中-公开
标题翻译：具有无效的FINS对的非易失性存储元件及其制造方法
公开(公告)号：JP2007251177A
公开(公告)日：2007-09-27
申请号：JP2007068923
申请日：2007-03-16
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK YOON-DONG , KIM WON-JOO , KOO JUN-MO , KIM SUK-PIL , HYUN JAE-WOONG , LEE JUNG-HOON
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L21/764 , H01L27/11521 , H01L27/11568 , H01L29/66825 , H01L29/66833 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory element having a pair of fins limited in void, and a method of manufacturing the same. SOLUTION: The nonvolatile memory element comprises a semiconductor substrate comprising a body and pair of fins that protrude from the body, a bridge insulating film that links top ends of the pair of Fins so that a void is limited between the pair of Fins, a control gate electrode that covers parts of surfaces of external sides of the pair of fins, extends transversely on the bridge insulating film, and is insulated from the semiconductor substrate on the opposite side of the void, gate insulating films interposed between the control gate electrode and the pair of fins, and storage node films interposed between the gate insulating film and the control gate electrode. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有限制在空隙中的一对翅片的非易失性存储元件及其制造方法。解决方案：非易失性存储元件包括半导体衬底，其包括主体和从主体突出的一对翅片，桥接绝缘膜，其连接该对金属丝的顶端，使得在一对金属丝之间限制空隙覆盖该对散热片的外侧表面的控制栅电极在桥绝缘膜上横向延伸，与空隙相反侧的半导体基板绝缘，位于控制栅之间的栅极绝缘膜电极和一对散热片，以及插入在栅极绝缘膜和控制栅电极之间的存储节点膜。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007036242A Non-volatile memory element having fin-type channel region, and method of fabricating the same 审中-公开
标题翻译：具有FIN型通道区域的非挥发性记忆元件及其制造方法
公开(公告)号：JP2007036242A
公开(公告)日：2007-02-08
申请号：JP2006200736
申请日：2006-07-24
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM WON-JOO , KIM SUK-PIL , PARK YOON-DONG , LEE EUN-HONG , HYUN JAE-WOONG , BYUN SUNG-JAE , LEE JUNG-HOON
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , G11C16/0483 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/7851 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory element with improved integration and improved performance, capable of controlling body bias and reducing the area per bit, and to provide a method of fabricating the same.
SOLUTION: The non-volatile memory elements can use the surface portions of the outer side surfaces and the upper surfaces of at least one pair of fins protruding from a body and extending, spaced from each other along one direction, as at least one pair of channel regions; and at least one or more control gate electrode can be formed across the channel regions, and at least one pair of storage nodes can be interposed, in at least one portion between the control gate electrode and the channel regions.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有改进的集成度和改进性能的非易失性存储元件，能够控制体偏置并减少每位的面积，并提供其制造方法。解决方案：非易失性存储元件可以使用从主体突出的至少一对翅片的外侧表面和上表面的表面部分，并且沿着一个方向彼此间隔开，至少为一对通道区域; 并且可以在沟道区域之间形成至少一个或多个控制栅电极，并且可以在控制栅极电极和沟道区域之间的至少一个部分中插入至少一对存储节点。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007243175A Nanowire memory device and method of manufacturing same 审中-公开
标题翻译：纳米存储器件及其制造方法
公开(公告)号：JP2007243175A
公开(公告)日：2007-09-20
申请号：JP2007033807
申请日：2007-02-14
申请人： Samsung Electronics Co Ltd , Seoul National Univ Industry Foundation , 三星電子株式会社Samsung Electronics Co.,Ltd. , 財団法人ソウル大学校産学協力財団Seoul National University Industry Foundation
发明人： YOO JIN-GYOO , KIM CHEOL-SOON , LEE JUNG-HOON
IPC分类号： H01L27/10
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L51/0048 , Y10S977/943
摘要： PROBLEM TO BE SOLVED: To provide a nanowire memory device and a method of manufacturing the same. SOLUTION: A memory device and a manufacturing method thereof are provided. The memory device includes: a substrate, a first electrode formed on the substrate, a first nanowire extended to a predetermined length at one end of the first electrode; a second electrode formed so as to overlap the first electrode; a second nanowire extended to a predetermined length in the same direction as the first nanowire at one end of the second electrode corresponding to the one end of the first electrode; and an insulation layer provided between the first and second electrodes. In this structure, the first and second electrodes only partially overlap one another. The nanowires are carbon nanotubes. At least one additional structure comprising a first electrode, a second electrode, a first nanowire, and a second nanowire that are formed on a substrate can be provided. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种纳米线存储器件及其制造方法。提供了一种存储器件及其制造方法。存储器件包括：衬底，形成在衬底上的第一电极，在第一电极的一端延伸到预定长度的第一纳米线; 形成为与第一电极重叠的第二电极; 第二纳米线在与第一电极的一端对应的第二电极的一端沿与第一纳米线相同的方向延伸到预定长度; 以及设置在第一和第二电极之间的绝缘层。在该结构中，第一电极和第二电极仅部分地彼此重叠。纳米线是碳纳米管。可以提供包括形成在基板上的第一电极，第二电极，第一纳米线和第二纳米线的至少一个附加结构。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007200540A Nand-type nonvolatile memory device having common bit line 审中-公开
标题翻译：具有通用位线的NAND型非易失性存储器件
公开(公告)号：JP2007200540A
公开(公告)日：2007-08-09
申请号：JP2007016947
申请日：2007-01-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUK-PIL , KIM WON-JOO , PARK YOON-DONG , HYUN JAE-WOONG , LEE JUNG-HOON
IPC分类号： G11C16/04 , G11C16/06 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/0483 , G11C7/18
摘要： PROBLEM TO BE SOLVED: To provide a NAND-type nonvolatile memory device having a common bit line. SOLUTION: This NAND-type nonvolatile memory device includes a first string and a second string of which the ends of them are connected to the common bit line and a common source line. The first string and the second string respectively have string selection transistors connected with each other in series, a plurality of unit devices and a source selection transistor. A plurality of word lines are respectively connected to control gates of the plurality of unit devices arranged in the same row. A first string selection line and a second string selection line are connected to gates of the string selection transistors of the first string and the second string, respectively. A first source selection line and a second source selection line are connected to the gates of source selection transistors of the second string and the first string, respectively. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有公共位线的NAND型非易失性存储器件。解决方案：该NAND型非易失性存储器件包括第一串和第二串，其端部连接到公共位线和公共源极线。第一串和第二串分别具有彼此串联的串选择晶体管，多个单元器件和源选择晶体管。多个字线分别连接到布置在同一行中的多个单元装置的控制栅极。第一串选择线和第二串选择线分别连接到第一串和第二串的串选择晶体管的栅极。第一源选择线和第二源选择线分别连接到第二串和第一串的源极选择晶体管的栅极。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2013242525A Curved surface display device 审中-公开
标题翻译：弯曲表面显示装置
公开(公告)号：JP2013242525A
公开(公告)日：2013-12-05
申请号：JP2013048924
申请日：2013-03-12
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd. , Samsung Display Co Ltd , サムスンディスプレイカンパニーリミテッド
发明人： AN JUN SEOK , KIM DONG WOOK , KIM SUNG-HWAN , PARK JI-SOO , PARK CHAN-HONG , SIM BYUNG-KOOK , LEE JONG-CHEOL , LEE CHEOL-SE , CHOI HYUNG-SIK , AHN BYUNG-WOOK , LEE JUNG-HOON
IPC分类号： G02F1/1333 , F21S2/00 , F21Y101/02 , F21Y103/00
CPC分类号： G02F1/133308 , F21V33/0052 , G02F1/133305 , G02F1/13336 , G02F1/133602 , G02F1/136286 , G02F2001/13332 , G02F2001/133328 , H05K5/0017 , H05K5/02 , H05K5/0217
摘要： PROBLEM TO BE SOLVED: To provide a curved surface display device for preventing an unevenness defect and a yellowish defect to be generated by stress of a bent display panel.SOLUTION: A curved surface display device 100 includes a display screen for displaying a video, in which the display screen has different curvatures in a plurality of sections, the curvatures have different curvature radii HR1, HR2, HR3, and each of the curvature radii corresponds to a radius of a circular arc approximated to a curve crossing a corresponding section.
摘要翻译：要解决的问题：提供一种用于防止由弯曲的显示面板的应力产生的不均匀性缺陷和黄色缺陷的曲面显示装置。解决方案：曲面显示装置100包括用于显示视频的显示屏，显示屏幕在多个部分中具有不同的曲率，曲率具有不同的曲率半径HR1，HR2，HR3，并且每个曲率半径对应于近似于与相应部分交叉的曲线的圆弧的半径。

9. 发明专利

JP2007329473A Non-volatile memory element having control gate electrode extending at angle inclined to fin 审中-公开
标题翻译：具有控制栅极电极的非易失性存储元件在角度上延伸到FIN
公开(公告)号：JP2007329473A
公开(公告)日：2007-12-20
申请号：JP2007134667
申请日：2007-05-21
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM WON-JOO , PARK YOON-DONG , LEE JUNG-HOON
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11519 , H01L29/42332 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory element having a control gate electrode extending at an angle inclined to a fin.
SOLUTION: The non-volatile memory element is constructed in a manner such that a semiconductor substrate has a body and a pair of fins which protrude upward from the body and are isolated opposed each other. A control gate electrode covers at least a part of outside surfaces of the pair of fins and extends crossing an upper portion of the pair of fins at an angle inclined to the pair of the fins, while a pair of gate insulating films are interposed between the control gate electrode and the pair of fins, and a pair of storage node films are interposed at least on a part between the pair of gate insulating films and the control gate electrode respectively.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种具有以与散热片倾斜的角度延伸的控制栅电极的非易失性存储元件。解决方案：非易失性存储元件被构造成使得半导体衬底具有主体和从主体向上突出并彼此相对隔离的一对翅片。控制栅极电极覆盖一对翅片的外表面的至少一部分，并且以与一对翅片倾斜的角度延伸与一对翅片的上部相交，而一对栅极绝缘膜介于控制栅电极和一对散热片，以及一对存储节点膜分别至少插入在一对栅极绝缘膜和控制栅电极之间的一部分上。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007282208A Mobile terminal service limiting device and method 审中-公开
标题翻译：移动终端服务限制设备和方法
公开(公告)号：JP2007282208A
公开(公告)日：2007-10-25
申请号：JP2007075363
申请日：2007-03-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK JEON MAN , CHOI KYU OK , LEE JUNG-HOON
IPC分类号： H04M1/677 , H04M1/57 , H04W4/00 , H04W8/26 , H04W48/02 , H04W76/02
CPC分类号： H04W48/02 , H04L63/0236 , H04L63/083 , H04M1/663 , H04M1/667 , H04M1/72577 , H04W4/00 , H04W8/26 , H04W12/06 , H04W12/08 , H04W76/02
摘要： PROBLEM TO BE SOLVED: To provide a mobile terminal service limiting device and method. SOLUTION: A service use limiting method in a mobile terminal includes processes: of checking a state of a service limiting mode when a given transmission or reception has been requested, of judging whether a telephone number of the given transmission or given reception has been registered in a communication authority telephone number list in advance or not if the service limiting mode is active, and of permitting the transmission or the reception if the telephone number of the transmission or reception has been registered in the communication authority telephone number list, whereas not permitting if the telephone number has not been registered. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种移动终端服务限制装置和方法。解决方案：移动终端中的服务使用限制方法包括以下处理：当已经请求给定发送或接收时，检查服务限制模式的状态，判断给定传输或给定接收的电话号码是否具有如果服务限制模式是活动的，并且如果发送或接收的电话号码已经登记在通信机构电话号码列表中，则可以提前登记在通信机构电话号码列表中，并且允许发送或接收，不允许电话号码尚未注册。版权所有（C）2008，JPO＆INPIT

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