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    • 1. 发明专利
    • Electrostatic chuck
    • 静电卡
    • JP2005045208A
    • 2005-02-17
    • JP2004096934
    • 2004-03-29
    • Samsung Electronics Co Ltd三星電子株式会社
    • CHO JAE-YONGAHN BYUNG-SUNKIM JIN-MANKIM KYUNG-SUN
    • H01L21/68H01L21/683H02N13/00
    • H01L21/6833Y10S156/915
    • PROBLEM TO BE SOLVED: To provide an electrostatic chuck capable of reducing a manufacture cost by enhancing a yield with uniform treatment to reduce defectives by the increase of the yield. SOLUTION: The electrostatic chuck includes a chuck body for supporting an object 1 to be treated, a guide ring 10 surrounding the circumference of the object 1 by the support of the chuck body, the layers 20a, 20b of a dielectric material intervened between the guide ring 10 and the chuck body, a mediation gas supply system 50 for supplying a mediation gas to the guide ring 10, and a power supply 75 for supplying a power source to chuck body. Consequently, the temperature difference between the object 1 and the guide ring 10 is reduced, and the uniform treatment can be done up to the edge of the object 1 in a semiconductor treatment process. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种能够通过均匀处理提高产量而降低制造成本的静电卡盘,通过提高产量来减少缺陷。 解决方案:静电卡盘包括用于支撑待处理物体1的卡盘体,通过卡盘主体的支撑件围绕物体1的周围的引导环10,介电材料的层20a,20b介入 在导向环10和卡盘体之间,用于向引导环10供给中介气体的中介气体供给系统50以及用于向卡盘体供给动力源的电源75。 因此,物体1和引导环10之间的温度差减小,并且在半导体处理工艺中可以对象物1的边缘进行均匀处理。 版权所有(C)2005,JPO&NCIPI
    • 2. 发明专利
    • Electrostatic chuck for wafer
    • 防静电卡盘
    • JP2005045207A
    • 2005-02-17
    • JP2004096933
    • 2004-03-29
    • Samsung Electronics Co Ltd三星電子株式会社
    • PARK JONG-ROKCHO JAE-YONGAHN BYUNG-SUN
    • H01L21/68H01L21/683H02N13/00
    • H01L21/6831
    • PROBLEM TO BE SOLVED: To provide an electrostatic chuck for a wafer by which heat generated in the wafer is simply and conveniently cooled by feeding a helium gas through a helium feeding passage. SOLUTION: The electrostatic chuck for the wafer includes a base 20 on which the wafer 10 is mounted, an annular first sealing member 30 which is fitted to the end of the upper face of the base 20, an annular second sealing member 40 which is fitted on the upper face of the base 20 separated from and inside the first sealing member 30 and which divides the wafer 10 into an edge 12 and a center portion 14 when the wafer 10 is mounted, a first helium feeding passage 50 that is branched and formed within the base 20 and that discharges the helium gas to the edge 12 of the wafer 10, and a second helium feeding passage 60 which is branched and formed within the base 20 so that it may have a difference in height from the first helium feeding passage 50 and which discharges the helium gas to the central portion 14 of the wafer 10. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了提供一种用于晶片的静电卡盘,通过这样一种静电卡盘,通过使氦气通过氦气供给通道进行供给,从而简单且便利地冷却晶片产生的热量。 解决方案:用于晶片的静电卡盘包括其上安装有晶片10的基座20,安装在基座20的上表面的端部的环形第一密封构件30,环形第二密封构件40 其安装在与第一密封构件30分离并在其内部的基部20的上表面上,并且当安装晶片10时将晶片10分割成边缘12和中心部分14;第一氦气供给通道50 分支并形成在基座20内并且将氦气排放到晶片10的边缘12,以及第二氦馈送通道60,其在基座20内分支形成,使得其可以具有与第一 氦气进料通道50,并将氦气排放到晶片10的中心部分14.版权所有:(C)2005,JPO&NCIPI