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    • 4. 发明申请
    • THIN FILM TRANNSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    • 薄膜传感器阵列及其制造方法
    • US20140191256A1
    • 2014-07-10
    • US14090487
    • 2013-11-26
    • Samsung Display Co., Ltd.
    • Jeong Min PARKJi-Hyun KIMJung-Soo LEESung Kyun PARK
    • H01L33/58
    • H01L27/124G02F1/13458G02F1/136227G02F1/1368H01L27/1248H01L29/78669H01L29/78678H01L33/58
    • Instead of forming contact holes the same way in both the non-image forming peripheral area (PA) and the image forming display area of a thin film transistor array panel, contact holes in the DA are formed to be substantially smaller than those in the PA for thereby improving an aperture ratio of the corresponding display device. In an exemplary embodiment, an inorganic gate insulating layer is not etched in the DA and only an inorganic first passivation layer among inorganic insulating layers positioned in the DA is etched to allow communication between the drain electrode and the corresponding field generating electrode. On the other hand, in the peripheral area, plural inorganic insulating layers such as the gate insulating laver, the first passivation laver, and the second passivation layer positioned on the gate wire and the data wire are simultaneously etched to form second contact holes and third contact holes exposing respective gate pads and data pads.
    • 代替在非图像形成周边区域(PA)和薄膜晶体管阵列面板的图像形成显示区域中以相同的方式形成接触孔,DA中的接触孔形成为显着小于PA中的接触孔 从而提高对应的显示装置的开口率。 在一个示例性实施例中,在DA中不蚀刻无机栅极绝缘层,并且仅在位于DA中的无机绝缘层中只有无机第一钝化层被蚀刻以允许漏电极和相应的场产生电极之间的连通。 另一方面,在外围区域中,同时蚀刻位于栅极线和数据线上的多个无机绝缘层,例如栅极绝缘层,第一钝化层和第二钝化层,形成第二接触孔,第三接触孔 接触孔暴露各个栅极焊盘和数据焊盘。