专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100163709A1 SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS 审中-公开
标题翻译：传感器至少包含垂直双结结构光电子体，集成在半导体基板上和相应的集成工艺
公开(公告)号：US20100163709A1
公开(公告)日：2010-07-01
申请号：US12649248
申请日：2009-12-29
申请人： Salvatore Leonardi , Marie Eloisa Castagna , Anna Muscara
发明人： Salvatore Leonardi , Marie Eloisa Castagna , Anna Muscara
IPC分类号： G01J1/32 , H01L31/10 , H01L31/0216
CPC分类号： H01L31/11 , H01L27/1443 , H01L31/02165 , H05B37/0218
摘要： An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor.
摘要翻译：一个实施例涉及集成在半导体衬底上并包括至少一个垂直双结光电二极管的传感器，其又包括形成在所述半导体衬底中的至少一个第一和一个第二pn结，以及至少一个抗反射在所述光电二极管上形成的涂层。所述至少一个防反射涂层包括至少一个第一和第二不同的抗反射层，适合于获得与所述传感器上的入射光信号的预定波长对应的响应峰。实施例还涉及这种传感器的集成过程，以及通过这种传感器制造的环境光传感器。

2. 发明授权

US08575720B2 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 有权
标题翻译：用于在惰性基板上集成至少包括无源元件和有源元件的器件以及相应的集成器件的工艺
公开(公告)号：US08575720B2
公开(公告)日：2013-11-05
申请号：US11803716
申请日：2007-05-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
IPC分类号： H01L27/08
CPC分类号： H01L21/84 , H01L27/12
摘要： A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.
摘要翻译：描述了一种在惰性基板上集成具有至少一个无源部件和一个有源部件的装置的方法。该方法包括：将保护电介质层沉积在惰性衬底上; 在保护电介质层上形成多晶硅岛; 有源元件在多晶硅岛上的集成; 覆盖电介质层沉积在保护电介质层和有源元件上; 将被动元件集成在覆盖介电层上; 在与所述有源部件的有源区域对应的覆盖介电层中实现的开口中形成第一接触结构; 以及与被动部件对应地形成第二接触结构。还描述了通过该方法获得的集成装置。

3. 发明授权

US07952104B2 Thin-film transistor (TFT) device 有权
标题翻译：薄膜晶体管（TFT）器件
公开(公告)号：US07952104B2
公开(公告)日：2011-05-31
申请号：US12564719
申请日：2009-09-22
申请人： Salvatore Leonardi , Claudia Caligiore
发明人： Salvatore Leonardi , Claudia Caligiore
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02686 , H01L21/02488 , H01L21/02532 , H01L21/2026 , H01L27/1229 , H01L27/1281 , H01L29/66757
摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.
摘要翻译：一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

4. 发明申请

US20100163759A1 RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS 审中-公开
标题翻译：带有光电转换器的辐射传感器集成在半导体衬底和相应的集成工艺
公开(公告)号：US20100163759A1
公开(公告)日：2010-07-01
申请号：US12649256
申请日：2009-12-29
申请人： Maria Eloisa Castagna , Salvatore Leonardi , Salvatore Abbisso , Lidia Maddiona
发明人： Maria Eloisa Castagna , Salvatore Leonardi , Salvatore Abbisso , Lidia Maddiona
IPC分类号： H01L31/14 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/18 , G01J1/0488 , G01J1/4204 , G01J1/4228 , H01L27/1443 , H01L31/02165
摘要： An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor.
摘要翻译：实施例涉及集成在半导体衬底上并包括至少一个第一和第二光电二极管的传感器，该至少一个第一和第二光电二极管包括在这种半导体衬底中形成的至少一个第一和一个第二pn结，以及至少一个第一和第二反射防止涂层这样的第一和第二光电二极管的顶部。这种第一和第二光电二极管的至少一个抗反射涂层包括至少一个第一和第二不同的抗反射层，以制造双层抗反射涂层，其适合于为相应的光电二极管获得在入射到其上的光信号的预定波长的响应峰传感器。实施例还涉及这种传感器以及由这种传感器制成的环境光传感器的集成过程。

5. 发明申请

US20070148527A1 FUEL CELL PLANARLY INTEGRATED ON A MONOCRYSTALLINE SILICON CHIP AND PROCESS OF FABRICATION 有权
标题翻译：燃料电池平面集成在单晶硅芯片和制造工艺
公开(公告)号：US20070148527A1
公开(公告)日：2007-06-28
申请号：US11611521
申请日：2006-12-15
申请人： Simone Siciliano , Luigi La Magna , Salvatore Leonardi
发明人： Simone Siciliano , Luigi La Magna , Salvatore Leonardi
IPC分类号： H01M8/02 , H01M4/86 , H01M4/88 , B05D5/12 , C25D5/02 , C25D3/00
CPC分类号： H01M8/1097 , H01M8/0271 , H01M8/04089 , H01M8/241 , H01M8/2425 , H01M2008/1095
摘要： A fuel cell is entirely fabricated on a single monocrystalline silicon substrate, and substantially overcomes leak proofing and wafer bonding difficulties and criticalities while ensuring an intrinsic sturdiness of the planarly integrated functional structure of the fuel cell. The integrated fuel cell is formed in an oxidized porous silicon region on a monocrystalline silicon substrate that is pervious to fluid flow and is electrically nonconductive with the monocrystalline silicon substrate.
摘要翻译：燃料电池完全制造在单个单晶硅衬底上，并且基本上克服了防漏和晶片接合困难和临界，同时确保燃料电池的平面集成的功能结构的内在坚固性。集成的燃料电池形成在单晶硅衬底上的氧化的多孔硅区域中，该单晶硅衬底可渗透流体流动并且与单晶硅衬底不导电。

6. 发明申请

US20070034872A1 Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process 有权
标题翻译：用于制造薄膜晶体管（TFT）器件和通过该工艺制造的TFT器件的工艺
公开(公告)号：US20070034872A1
公开(公告)日：2007-02-15
申请号：US11478332
申请日：2006-06-28
申请人： Salvatore Leonardi , Claudia Caligiore
发明人： Salvatore Leonardi , Claudia Caligiore
IPC分类号： H01L29/04
CPC分类号： H01L21/02686 , H01L21/02488 , H01L21/02532 , H01L21/2026 , H01L27/1229 , H01L27/1281 , H01L29/66757
摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.
摘要翻译：一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

7. 发明授权

US06815795B2 High voltage resistive structure integrated on a semiconductor substrate 有权
标题翻译：集成在半导体衬底上的高电压电阻结构
公开(公告)号：US06815795B2
公开(公告)日：2004-11-09
申请号：US10420386
申请日：2003-04-21
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L2900
CPC分类号： H01L21/76208 , H01L21/761 , H01L27/0802
摘要： A resistive structure integrated on a semiconductive substrate is described. The resistive structure has a first type of conductivity formed into a serpentine region of conductivity which is opposite to that of the semiconductive substrate. In at least two parallel portions of the serpentine region, there is at least one trench filled with an insulating material.

8. 发明授权

US5796156A High-voltage semiconductor device with integrated edge structure and associated manufacturing process 失效
标题翻译：具有集成边缘结构和相关制造工艺的高压半导体器件
公开(公告)号：US5796156A
公开(公告)日：1998-08-18
申请号：US671851
申请日：1996-06-28
申请人： Salvatore Leonardi , Davide Bolognesi
发明人： Salvatore Leonardi , Davide Bolognesi
IPC分类号： H01L29/06 , H01L23/58
CPC分类号： H01L29/0619 , H01L29/0615
摘要： A semiconductor device including a substrate having a first conductivity type on which are formed first and second epitaxial layers of the same conductivity type of the substrate. The semiconductor device also includes a first diffused region having a second conductivity type formed in a first portion of the first and second epitaxial layers. Said first diffused region defines a first junction with said first and second epitaxial layers. The semiconductor device also comprises an edge structure having the second conductivity type formed in a second portion of the first and second epitaxial layers. The edge structure includes a second diffused region having the second conductivity type formed in the first and second epitaxial layers, said second diffused region defining a second junction with said first and second epitaxial layers. The edge structure also includes a third diffused region of the same conductivity type of the second diffused region formed in the second epitaxial layer, said third diffused region being interposed between the first and the second diffuse regions and defining a third junction with said second epitaxial layer, said third junction being shallower than the first and the second junctions.
摘要翻译：一种半导体器件，包括具有第一导电类型的衬底，其上形成有相同导电类型的衬底的第一和第二外延层。半导体器件还包括形成在第一和第二外延层的第一部分中的具有第二导电类型的第一扩散区域。所述第一扩散区域限定与所述第一和第二外延层的第一结。半导体器件还包括在第一和第二外延层的第二部分中形成的具有第二导电类型的边缘结构。边缘结构包括形成在第一和第二外延层中的具有第二导电类型的第二扩散区域，所述第二扩散区域限定与所述第一和第二外延层的第二结。边缘结构还包括形成在第二外延层中的与第二扩散区相同导电类型的第三扩散区，所述第三扩散区介于第一和第二扩散区之间，并且与所述第二外延层所述第三结点比所述第一和第二结点浅。

9. 发明授权

US08753869B2 Cartridge for biochemical analyses, system for biochemical analyses, and method of carrying out a biochemical process 有权
标题翻译：用于生化分析的药盒，生化分析系统，以及进行生化过程的方法
公开(公告)号：US08753869B2
公开(公告)日：2014-06-17
申请号：US13531303
申请日：2012-06-22
申请人： Maria Eloisa Castagna , Giuseppe Catania , Salvatore Leonardi , Alberto Mario Piro
发明人： Maria Eloisa Castagna , Giuseppe Catania , Salvatore Leonardi , Alberto Mario Piro
IPC分类号： C12M1/00 , C12Q1/68 , C12M1/34 , G01N21/00 , A61J1/06 , G01J3/30 , G01N21/25
CPC分类号： G01N21/6454 , G01N21/6456
摘要： A cartridge for biochemical analysis includes a support, a structure, which is set on the support and contains wells for receiving a solution, and photodetectors on the support, in positions corresponding to respective wells.
摘要翻译：用于生物化学分析的盒包括支撑件，结构，其设置在支撑件上并且包含用于接收溶液的孔以及在支撑件上的对应于各个孔的位置的光电检测器。

10. 发明授权

US08405303B2 Organic electroluminescent device with isolation region for improved light emission and systems including same 有权
标题翻译：具有用于改善发光的隔离区域的有机电致发光器件及包括其的系统
公开(公告)号：US08405303B2
公开(公告)日：2013-03-26
申请号：US11582137
申请日：2006-10-16
申请人： Maria Grazia Maglione , Chiara Leo , Salvatore Leonardi
发明人： Maria Grazia Maglione , Chiara Leo , Salvatore Leonardi
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3246 , H01L51/5284
摘要： An electroluminescent device includes at least first and second radiation emitter devices arranged on a common substrate. Each radiation emitter devise includes a first active layer and a second layer of organic material for generating the radiation, respectively. This device includes isolation means of dielectric material which are at least partially interposed between the first and second active layers to electrically isolate the first layer from the second active layer.
摘要翻译：电致发光器件至少包括布置在公共衬底上的第一和第二辐射发射器器件。每个辐射发射器设备分别包括用于产生辐射的第一有源层和第二有机材料层。该装置包括介电材料的隔离装置，其至少部分插入在第一和第二有源层之间以将第一层与第二有源层电隔离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式