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1. 发明授权

US5578284A Silicon single crystal having eliminated dislocation in its neck 失效
标题翻译：硅单晶消除其颈部脱位
公开(公告)号：US5578284A
公开(公告)日：1996-11-26
申请号：US483304
申请日：1995-06-07
申请人： Sadasivam Chandrasekhar , Kyong-Min Kim
发明人： Sadasivam Chandrasekhar , Kyong-Min Kim
IPC分类号： C30B15/20 , C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208 , C01B33/02
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1004 , Y10T117/1008
摘要： A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.
摘要翻译：通过切克劳斯基法制备的硅单晶包括具有上部，中间部分和下部的颈部。上部包含位错。中间部分在上部和下部之间。中间部分和下部部分的大部分具有大于10毫米的直径，并且下部部分没有位错。晶体还包括邻近颈部下部的向外扩张部分，以及与向外扩张部分相邻的主体。

2. 发明授权

US5840120A Apparatus for controlling nucleation of oxygen precipitates in silicon crystals 失效
标题翻译：用于控制硅晶体中氧沉淀物的成核的装置
公开(公告)号：US5840120A
公开(公告)日：1998-11-24
申请号：US589612
申请日：1996-01-22
申请人： Kyong-Min Kim , Roger W. Shaw , Sadasivam Chandrasekhar , Richard G. Schrenker
发明人： Kyong-Min Kim , Roger W. Shaw , Sadasivam Chandrasekhar , Richard G. Schrenker
IPC分类号： C30B15/00 , C30B15/14 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.
摘要翻译：一种用于生产通过切克劳斯基（Czochralski）工艺生长的硅单晶的设备。该设备包括中空生长室，设置在生长室内的石英坩埚，以及用于从保留在坩埚中的硅熔体向上拉出生长的硅单晶的拉动构件。生长室上方的晶体室在被拉动时接收晶体。连接构件连接生长室和晶体室。第一加热构件限定了通过其被拉动的晶体的通道，用于防止在晶体中形成氧沉淀成核中心，直到晶体被拉过通道，至少部分地设置在生长室内。限定晶体被拉动的通道的第二加热构件设置在晶体室内，用于控制晶体中氧沉淀成核中心的形成。

3. 发明授权

US5779791A Process for controlling thermal history of Czochralski-grown silicon 失效
标题翻译：控制Czochralski生长硅热历史的方法
公开(公告)号：US5779791A
公开(公告)日：1998-07-14
申请号：US694157
申请日：1996-08-08
申请人： Harold W. Korb , Sadasivam Chandrasekhar , Robert J. Falster , Joseph C. Holzer , Kyong-Min Kim , Steven L. Kimbel , Larry E. Drafall
发明人： Harold W. Korb , Sadasivam Chandrasekhar , Robert J. Falster , Joseph C. Holzer , Kyong-Min Kim , Steven L. Kimbel , Larry E. Drafall
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06 , C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/10
摘要： A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history from a silicon melt contained in a crucible coaxial with the ingot. In the process the pulling rate of the end-cone of the ingot is maintained at a relatively constant rate which is comparable to the pulling rate for the second half of the main body of the ingot. During the pulling of the end-cone of the crystal at a constant rate, the process may be further refined by, either independently or in combination, increasing the heat supplied to the melt, reducing the crystal rotation rate and/or reducing the crucible rotation rate. The second half of the main body of a single crystal silicon ingot grown in accordance with this process exhibits a relatively uniform axial concentration of flow pattern defects and amount of oxygen precipitated.
摘要翻译：一种生产具有与包含在与锭同轴的坩埚中的硅熔体具有均匀热历史的单晶硅锭的切克劳斯基法。在该过程中，锭的端锥的拉伸速率保持在相对恒定的速率，其与锭的主体的后半部分的拉拔速率相当。在以恒定速率拉伸晶体的端锥期间，可以通过独立地或组合地进一步提高该方法，从而增加供应到熔体的热量，降低晶体旋转速率和/或减少坩埚旋转率。根据该方法生长的单晶硅锭的主体的后半部分表现出相对均匀的轴向浓度的流动模式缺陷和氧沉淀量。

4. 发明授权

US5885344A Non-dash neck method for single crystal silicon growth 失效
标题翻译：用于单晶硅生长的非破折颈法
公开(公告)号：US5885344A
公开(公告)日：1999-03-23
申请号：US907795
申请日：1997-08-08
申请人： Kyong-Min Kim , Sadasivam Chandrasekhar
发明人： Kyong-Min Kim , Sadasivam Chandrasekhar
IPC分类号： C30B15/00 , C30B15/14 , C30B15/36 , C30B29/06 , C30B15/32
CPC分类号： C30B29/06 , C30B15/14 , C30B15/36 , Y10S117/902
摘要： A non-Dash neck method of preparing a single crystal silicon rod, pulled in accordance with the Czochralski method. The process is characterized in that a large diameter, dislocation-free seed crystal is allowed to thermally equilibrate prior to initiation of silicon rod growth, in order to avoid the formation of dislocations resulting from thermal shock to the crystal. The process is further characterized in that a resistance heater is used to melt the lower tip of the seed crystal to form a molten cap before it is brought into contact with the melt. The process yields a single crystal silicon rod having a short, large diameter neck which is dislocation-free, and which is capable of supporting a silicon rod which weighs at least about 100 kilograms during growth and subsequent handling.
摘要翻译：按照Czochralski法拉伸制备单晶硅棒的非Dash颈法。该方法的特征在于，在开始硅棒生长之前允许大直径的无位错晶种热平衡，以避免由于对晶体的热冲击而产生的位错形成。该方法的特征还在于，使用电阻加热器来熔化晶种的下端以在与熔体接触之前形成熔融帽。该方法产生具有短的，大直径的颈部的单晶硅棒，其是无位错的，并且其能够在生长和随后的处理期间支撑重量至少约100千克的硅棒。

5. 发明授权

US5628823A Process for eliminating dislocations in the neck of a silicon single crystal 失效
标题翻译：消除硅单晶颈部位错的方法
公开(公告)号：US5628823A
公开(公告)日：1997-05-13
申请号：US675550
申请日：1996-07-03
申请人： Sadasivam Chandrasekhar , Kyong-Min Kim
发明人： Sadasivam Chandrasekhar , Kyong-Min Kim
IPC分类号： C30B15/20 , C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1004 , Y10T117/1008
摘要： A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.
摘要翻译：通过切克劳斯基法制备的硅单晶包括具有上部，中间部分和下部的颈部。上部包含位错。中间部分在上部和下部之间。中间部分和下部部分的大部分具有大于10毫米的直径，并且下部部分没有位错。晶体还包括邻近颈部下部的向外扩张部分，以及与向外扩张部分相邻的主体。

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