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    • 4. 发明授权
    • Unpolarized light beam splitter
    • 非偏振光束分离器
    • US5717523A
    • 1998-02-10
    • US741930
    • 1996-10-31
    • Yuichi Ohashi
    • Yuichi Ohashi
    • G02B5/08G02B5/28G02B5/30G02B27/28G02B1/10
    • G02B27/283
    • Four kinds of dielectrics in the form of a mixture of ZrO.sub.2 and TiO.sub.2 having a refractive index of 2.07, MgF.sub.2 having a refractive index of 1.37, Al.sub.2 O.sub.3 having a refractive index of 1.61, and TiO.sub.2 having a refractive index of 2.27 are laminated on a transparent glass substrate in twenty layers. Two kinds of unpolarized light beam splitters having ratios of the reflected light to the transmitted light of 7:3 and 8:2, respectively, are thereby obtained. Both kinds of unpolarized light beam splitters have the twentieth layer, that is the outermost layer, formed with MgF.sub.2. The difference between the reflectance of the polarizing P component and the reflectance of the polarizing S component of the reflected light is set to be below 10%.
    • 折射率为2.07的ZrO 2和TiO 2的混合物,折射率为1.37的MgF 2,折射率为1.61的Al 2 O 3和折射率为2.27的TiO 2的四种电介质叠层在透明 玻璃基板二十层。 由此得到分别具有反射光与透射光的比例分别为7:3和8:2的两种非偏振光束分离器。 两种非偏振光束分离器都是由MgF2形成的第二十层,即最外层。 偏光P成分的反射率与反射光的偏振S成分的反射率之差设定为低于10%。
    • 7. 发明授权
    • Imaging device and endoscopic apparatus
    • 成像装置和内窥镜装置
    • US08848047B2
    • 2014-09-30
    • US11861361
    • 2007-09-26
    • Masafumi InuiyaYuichi OhashiMikio Ihama
    • Masafumi InuiyaYuichi OhashiMikio Ihama
    • A62B1/04H04N3/14H04N5/33H04N9/04
    • H04N9/045A61B1/00186H04N5/332
    • An imaging device comprising: in-substrate photoelectric converting devices arranged on the same plane in a semiconductor substrate; on-substrate photoelectric converting devices, formed on the same plane above the semiconductor substrate, each of which corresponds to each of at least a part of the in-substrate photoelectric converting devices and comprises a first electrode formed above the semiconductor substrate, a photoelectric converting layer formed on the first electrode and a second electrode formed on the photoelectric converting layer; a color filter layer that is formed above the semiconductor substrate and transmits a light in a different wave range from a wave range of a light to be absorbed by the photoelectric converting layer; and a signal reading section that reads a signal corresponding to an electric charge generated in the on-substrate photoelectric converting device and a signal corresponding to an electric charge generated in the in-substrate photoelectric converting device respectively.
    • 一种成像装置,包括:在半导体衬底中布置在同一平面上的衬底内光电转换装置; 衬底上光电转换装置,形成在半导体衬底上的相同平面上,每个衬底上的光电转换装置对应于衬底内光电转换装置的至少一部分中的每一个,并且包括形成在半导体衬底上的第一电极,光电转换 形成在第一电极上的第一电极和形成在光电转换层上的第二电极; 滤色器层,其形成在所述半导体基板的上方,并且透过由所述光电转换层吸收的光的波长范围的不同波长的光; 以及信号读取部分,其分别读取与在衬底上光电转换装置中产生的电荷相对应的信号和对应于在衬底内光电转换装置中产生的电荷的信号。