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1. 发明申请

US20050017942A1 Shift register and display device 有权
标题翻译：移位寄存器和显示设备
公开(公告)号：US20050017942A1
公开(公告)日：2005-01-27
申请号：US10895891
申请日：2004-07-22
申请人： Sachio Tsujino , Shinya Takahashi
发明人： Sachio Tsujino , Shinya Takahashi
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , H01L51/50 , H05B33/14
CPC分类号： G09G3/20 , G09G2310/0267 , G09G2310/08 , G09G2330/021
摘要： A display device is provided with a shift register having a plurality of bistable circuits, each of the bistable circuits being connected to a corresponding scanning line. An RS flip-flop circuit provided in each of the bistable circuits functions as a memory portion for discriminating a start position of a display region for partial display. When partial display is carried out, first, only the RS flip-flop circuit corresponding to the start position of the display region is put into the set state, that is, only the bistable circuit corresponding to the start position of the display region is put into the set state. Moreover, the scanning lines that are connected to the bistable circuits from the start position to the end position are driven sequentially. During this, only the bistable circuit corresponding to the start position is kept in the set state, and the other bistable circuits are kept in the reset state.
摘要翻译：显示装置设置有具有多个双稳态电路的移位寄存器，每个双稳态电路连接到相应的扫描线。设置在每个双稳态电路中的RS触发器电路用作用于区分用于部分显示的显示区域的开始位置的存储部分。当进行部分显示时，首先，仅将与显示区域的开始位置相对应的RS触发器电路置于设定状态，即仅放置与显示区域的开始位置对应的双稳态电路进入设定状态。此外，从起始位置到结束位置连接到双稳态电路的扫描线被依次驱动。在此期间，只有与开始位置相对应的双稳电路保持在设定状态，其他双稳态电路保持在复位状态。

2. 发明授权

US07365728B2 Shift register and display device 有权
标题翻译：移位寄存器和显示设备
公开(公告)号：US07365728B2
公开(公告)日：2008-04-29
申请号：US10895891
申请日：2004-07-22
申请人： Sachio Tsujino , Shinya Takahashi
发明人： Sachio Tsujino , Shinya Takahashi
IPC分类号： G09G3/36
CPC分类号： G09G3/20 , G09G2310/0267 , G09G2310/08 , G09G2330/021
摘要： A display device is provided with a shift register having a plurality of bistable circuits, each of the bistable circuits being connected to a corresponding scanning line. An RS flip-flop circuit provided in each of the bistable circuits functions as a memory portion for discriminating a start position of a display region for partial display. When partial display is carried out, first, only the RS flip-flop circuit corresponding to the start position of the display region is put into the set state, that is, only the bistable circuit corresponding to the start position of the display region is put into the set state. Moreover, the scanning lines that are connected to the bistable circuits from the start position to the end position are driven sequentially. During this, only the bistable circuit corresponding to the start position is kept in the set state, and the other bistable circuits are kept in the reset state.
摘要翻译：显示装置设置有具有多个双稳态电路的移位寄存器，每个双稳态电路连接到对应的扫描线。设置在每个双稳态电路中的RS触发器电路用作用于区分用于部分显示的显示区域的开始位置的存储部分。当进行部分显示时，首先，仅将与显示区域的开始位置相对应的RS触发器电路置于设定状态，即仅放置与显示区域的开始位置对应的双稳态电路进入设定状态。此外，从起始位置到结束位置连接到双稳态电路的扫描线被依次驱动。在此期间，只有与开始位置相对应的双稳电路保持在设定状态，其他双稳态电路保持在复位状态。

3. 发明申请

US20100073356A1 Level shifter, shift register with level shifter, and display device with shift register 审中-公开
标题翻译：电平移位器，带电平移位器的移位寄存器，带移位寄存器的显示装置
公开(公告)号：US20100073356A1
公开(公告)日：2010-03-25
申请号：US11919660
申请日：2006-05-12
申请人： Sachio Tsujino , Takahiro Yamaguchi , Shinya Takahashi , Isao Takahashi , Hajime Washio
发明人： Sachio Tsujino , Takahiro Yamaguchi , Shinya Takahashi , Isao Takahashi , Hajime Washio
IPC分类号： G06F3/038 , H03L5/00 , G11C19/00
CPC分类号： G11C19/00 , G09G3/3677 , G09G2310/0289 , G11C19/28 , H03K19/0016 , H03K19/018521
摘要： In one embodiment of the present invention, a NAND circuit, an inverter, a plurality of transistors serve as stopping devices for stopping operation of a circuit in a manner responsive to a level of an initializing signal that is fed. If the initializing signal that is Low-level is fed into the NAND circuit, then a plurality of transistors all become OFF. This makes it possible to reduce steady current flowing across a voltage and a start signal. Steady current flowing across the voltage and a start inverted signal is also reduced. Thus, the steady current flowing through the level shifter is reduced reliably, regardless of the way of use, when necessary.
摘要翻译：在本发明的一个实施例中，NAND电路，反相器，多个晶体管用作停止对电路的操作的停止装置，以响应于馈送的初始化信号的电平。如果低电平的初始化信号馈送到NAND电路，则多个晶体管全部变为OFF。这使得可以减少流过电压和起始信号的稳定电流。流过电压的稳定电流和启动反转信号也减少了。因此，不管使用方式如何，在必要时，能够可靠地降低流过电平移位器的稳定电流。

4. 发明授权

US10076773B2 Method for washing reactor 有权
公开(公告)号：US10076773B2
公开(公告)日：2018-09-18
申请号：US13817218
申请日：2011-08-12
申请人： Shinya Takahashi , Kazuhiko Tasaka , Yuichi Tanaka , Marie Iwama
发明人： Shinya Takahashi , Kazuhiko Tasaka , Yuichi Tanaka , Marie Iwama
IPC分类号： B08B3/08 , B08B3/10 , B08B9/08 , B08B3/04 , C10G1/06 , C10G47/22 , C10G47/00 , C10G21/12 , C10G47/36 , C10G2/00 , B01J38/52 , B01J38/56
CPC分类号： B08B3/04 , B01J38/52 , B01J38/56 , B08B9/08 , C10G1/06 , C10G2/32 , C10G21/12 , C10G47/00 , C10G47/22 , C10G47/36 , C10G2300/1014 , C10G2300/1022 , C10G2300/4031 , C10G2300/44 , Y02P30/20
摘要： The method for cleaning a reactor of the present invention comprises passing a solvent through a wax-fraction hydrocracking apparatus which is charged with a catalyst and to which supply of a wax fraction is stopped, wherein the solvent comprising at least one oil selected from a group consisting of hydrocarbon and vegetable oils, and having a sulfur content of less than 5 ppm and being in a liquid state at 15° C.

5. 发明申请

US20110076834A1 Semiconductor device and method for semiconductor device 失效
公开(公告)号：US20110076834A1
公开(公告)日：2011-03-31
申请号：US12926676
申请日：2010-12-03
申请人： Shinya Takahashi
发明人： Shinya Takahashi
IPC分类号： H01L21/28
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： A semiconductor device includes a semiconductor substrate, a memory cell region provided on the semiconductor substrate, a word line provided on the memory cell region, a first gate insulating film provided in the memory cell region beneath the word line, a first floating gate electrode provided on the first gate insulating film, a second gate insulating film provided in the memory cell region beneath the word line, the second gate insulating film being different from the first gate insulating film in thickness, and a second floating gate electrode provided on the second gate insulating film.

6. 发明申请

US20110024825A1 SEMICONDUCTOR MEMORY 审中-公开
标题翻译：半导体存储器
公开(公告)号：US20110024825A1
公开(公告)日：2011-02-03
申请号：US12898914
申请日：2010-10-06
申请人： Tatsuo Izumi , Takeshi Kamigaichi , Shinya Takahashi
发明人： Tatsuo Izumi , Takeshi Kamigaichi , Shinya Takahashi
IPC分类号： H01L29/792
CPC分类号： H01L27/105 , H01L27/0207 , H01L27/11526 , H01L27/11534 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory according to an example of the invention includes active areas, and element isolation areas which isolate the active areas. The active areas and the element isolation areas are arranged alternately in a first direction. An n-th (n is odd number) active area from an endmost portion in the first direction and an (n+1)-th active area are coupled to each other at an endmost portion in a second direction perpendicular to the first direction.
摘要翻译：根据本发明的示例的半导体存储器包括有源区域和隔离有源区域的元件隔离区域。有源区域和元件隔离区域沿第一方向交替布置。从第一方向最端部分的第n（n是奇数）有效区域和第（n + 1）有效区域在垂直于第一方向的第二方向上的最末端处彼此耦合。

7. 发明申请

US20110023189A1 TRANSFORMED PLANT WITH PROMOTED GROWTH 有权
标题翻译：改造后的植物与增长的增长
公开(公告)号：US20110023189A1
公开(公告)日：2011-01-27
申请号：US12746654
申请日：2008-12-05
申请人： Shinya Takahashi , Takanari Ichikawa , Minami Matsui , Tomoko Kuriyama , Yukako Hasegawa , Hirohiko Hirochika , Masaki Mori
发明人： Shinya Takahashi , Takanari Ichikawa , Minami Matsui , Tomoko Kuriyama , Yukako Hasegawa , Hirohiko Hirochika , Masaki Mori
IPC分类号： C12N15/82 , A01H5/00 , A01H5/10 , C12N5/10
CPC分类号： C12N15/8261 , A01H5/08 , A01H6/88 , C07K14/415 , C12N15/8262 , Y02A40/146
摘要： The present invention is directed to identify genes involved in the growth of a plant and provide a transformed plant the growth of which is promoted utilizing the genes.
摘要翻译：本发明涉及鉴定参与植物生长的基因，并提供利用该基因促进生长的转化植物。

8. 发明授权

US07825439B2 Semiconductor memory 有权
标题翻译：半导体存储器
公开(公告)号：US07825439B2
公开(公告)日：2010-11-02
申请号：US12191592
申请日：2008-08-14
申请人： Tatsuo Izumi , Takeshi Kamigaichi , Shinya Takahashi
发明人： Tatsuo Izumi , Takeshi Kamigaichi , Shinya Takahashi
IPC分类号： H01L29/768
CPC分类号： H01L27/105 , H01L27/0207 , H01L27/11526 , H01L27/11534 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory according to an example of the invention includes active areas, and element isolation areas which isolate the active areas. The active areas and the element isolation areas are arranged alternately in a first direction. An n-th (n is odd number) active area from an endmost portion in the first direction and an (n+1)-th active area are coupled to each other at an endmost portion in a second direction perpendicular to the first direction.
摘要翻译：根据本发明的示例的半导体存储器包括有源区域和隔离有源区域的元件隔离区域。有源区域和元件隔离区域沿第一方向交替布置。从第一方向最端部分的第n（n是奇数）有效区域和第（n + 1）有效区域在垂直于第一方向的第二方向上的最末端处彼此耦合。

9. 发明授权

US07822435B2 Communication terminal unit capable of receiving a message and method for identifying a message sender in the same 有权
标题翻译：能够接收消息的通信终端单元和用于识别其中的消息发送者的方法
公开(公告)号：US07822435B2
公开(公告)日：2010-10-26
申请号：US11790375
申请日：2007-04-25
申请人： Shinya Takahashi , Akira Tanaka
发明人： Shinya Takahashi , Akira Tanaka
IPC分类号： H04Q7/20
CPC分类号： H04L29/1215 , G06Q10/107 , H04L51/28 , H04L51/30 , H04L51/38 , H04L61/1564 , H04L69/40 , H04M1/274558 , H04M1/57 , H04M1/575 , H04M1/576 , H04M1/578 , H04M1/656 , H04M1/72547 , H04M1/72552 , H04W4/12 , H04W88/02
摘要： A communication terminal unit capable of identifying a message sender by comparing a source address attached to a received message with an address registered in a memory of the unit in advance, which can identify the message sender even if the source address has an error by regarding the erroneous source address to be the same as the registered address when the difference between these two addresses is within a predetermined permissible range.
摘要翻译：一种能够通过将附加到接收到的消息的源地址与预先登记在该单元的存储器中的地址进行比较来识别消息发送者的通信终端单元，其可以识别消息发送者，即使源地址具有关于当这两个地址之间的差在预定的允许范围内时，错误的源地址与注册地址相同。

10. 发明申请

US20100234368A1 CONDENSED RING COMPOUND AND USE THEREOF 有权
标题翻译：冷凝环化合物及其用途
公开(公告)号：US20100234368A1
公开(公告)日：2010-09-16
申请号：US12791365
申请日：2010-06-01
申请人： Jun TAKEUCHI , Satoshi Itadani , Yoshisuke Nakayama , Tadashi Tatsumi , Shinya Takahashi , Manabu Fujita
发明人： Jun TAKEUCHI , Satoshi Itadani , Yoshisuke Nakayama , Tadashi Tatsumi , Shinya Takahashi , Manabu Fujita
IPC分类号： A61K31/538 , A61P11/06 , A61P11/00
CPC分类号： C07C205/60 , A61K31/538 , A61K45/06 , C07C205/37 , C07D265/36 , C07D413/04 , A61K2300/00
摘要： The present invention relates to a compound of formula (I) (wherein all symbols have the same meanings as described hereinbefore). The compound antagonizes cysLT2 and therefore, it is useful as an agent for the prevention and/or treatment of respiratory diseases such as bronchial asthma, bronchial asthma, chronic obstructive pulmonary disease, pneumonectasia, chronic bronchitis, pneumonia (e.g. interstitial pneumonitis etc.), severe acute respiratory syndrome (SARS), acute respiratory distress syndrome (ARDS), allergic rhinitis, sinusitis (e.g. acute sinusitis, chronic sinusitis, etc.), and the like, or as an expectorant or antitussives.
摘要翻译：本发明涉及式（I）化合物（其中所有符号具有与上述相同的含义）。该化合物拮抗cysLT2，因此可用作预防和/或治疗呼吸系统疾病如支气管哮喘，支气管哮喘，慢性阻塞性肺病，肺炎，慢性支气管炎，肺炎（例如间质性肺炎等）的药剂，严重急性呼吸综合征（SARS），急性呼吸窘迫综合征（ARDS），过敏性鼻炎，鼻窦炎（如急性鼻窦炎，慢性鼻窦炎等）等，或作为祛痰药或镇咳药。

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