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1. 发明申请

WO2015095797A1 CONTACTS FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池联系人
公开(公告)号：WO2015095797A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/071674
申请日：2014-12-19
申请人： SUNPOWER CORPORATION , TOTAL MARKETING SERVICES
发明人： MOORS, Matthieu , SMITH, David D. , HARLEY, Gabriel , KIM, Taeseok
IPC分类号： H01L31/18 , H01L31/04
CPC分类号： H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要： A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
摘要翻译：公开了一种制造太阳能电池的方法。该方法可以包括在太阳能电池结构的表面上形成电介质区域，并在电介质层上形成金属层。该方法还可以包括配置具有特定形状的激光束并且将具有特定形状的激光束引导到金属层上，其中特定形状允许在金属层和太阳能电池结构之间形成接触。

2. 发明申请

WO2015200715A1 PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON 审中-公开
标题翻译：太阳能电池的光接收表面与晶体硅的钝化
公开(公告)号：WO2015200715A1
公开(公告)日：2015-12-30
申请号：PCT/US2015/037819
申请日：2015-06-25
申请人： TOTAL MARKETING SERVICES , SUNPOWER CORPORATION
发明人： JOHNSON, Michael C. , TRACY, Kieran Mark , TOMADA, Princess Carmi , SMITH, David D. , RIM, Seung Bum , JAFFRENNOU, Périne
IPC分类号： H01L31/0216 , H01L31/0288 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02363 , H01L31/0682 , H01L31/0745 , H01L31/0747 , Y02E10/547
摘要： Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.
摘要翻译：描述了用结晶硅钝化太阳能电池的光接收表面的方法和所得的太阳能电池。在一个示例中，太阳能电池包括具有光接收表面的硅衬底。本征硅层设置在硅衬底的光接收表面之上。 N型硅层设置在本征硅层上。本征硅层和N型硅层中的一个或两个是微晶或多晶硅层。在另一示例中，太阳能电池包括具有受光面的硅基板。钝化介质层设置在硅衬底的光接收表面上。设置在钝化介电层上的N型微晶或多晶硅层。

4. 发明公开

EP3161874A1 PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON 有权转让
标题翻译：结晶硅对太阳电池光接收表面钝化的研究
公开(公告)号：EP3161874A1
公开(公告)日：2017-05-03
申请号：EP15812793.6
申请日：2015-06-25
申请人： Total Marketing Services , SunPower Corporation
发明人： JOHNSON, Michael C. , TRACY, Kieran Mark , TOMADA, Princess Carmi , SMITH, David D. , RIM, Seung Bum , JAFFRENNOU, Périne
IPC分类号： H01L31/0216 , H01L31/0288 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02363 , H01L31/0682 , H01L31/0745 , H01L31/0747 , Y02E10/547
摘要： Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.
摘要翻译：描述了用晶体硅钝化太阳能电池的光接收表面的方法以及所得到的太阳能电池。在一个示例中，太阳能电池包括具有光接收表面的硅基板。本征硅层设置在硅衬底的光接收表面上方。在本征硅层上设置N型硅层。本征硅层和N型硅层中的一个或两个是微晶硅层或多晶硅层。在另一个例子中，太阳能电池包括具有光接收表面的硅基板。钝化介电层设置在硅衬底的光接收表面上。设置在钝化介电层上的N型微晶硅或多晶硅层。

5. 发明申请

WO2017173385A1 METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
标题翻译：具有不同P型和N型区域结构的太阳能电池的金属化
公开(公告)号：WO2017173385A1
公开(公告)日：2017-10-05
申请号：PCT/US2017/025574
申请日：2017-03-31
申请人： SUNPOWER CORPORATION
发明人： SMITH, David D. , WEIDMAN, Timothy , HARRINGTON, Scott , BALU, Venkatasubramani
IPC分类号： H01L31/18 , H01L31/028 , H01L31/0216 , H01L31/0236 , H01L31/0224
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.
摘要翻译：描述了制造具有差异化的P型和N型区域架构的太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个示例中，背接触太阳能电池可以包括具有光接收表面和背表面的衬底。第一导电类型的第一多晶硅发射极区域设置在设置在基板背面上的第一薄介电层上。第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面上的第二薄介电层上。第三薄介电层设置在第一多晶硅发射极区的暴露的外部上，并且横向设置在第一和第二多晶硅发射极区之间。第一导电接触结构设置在第一多晶硅发射区上。第二导电接触结构设置在第二多晶硅发射区上。还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

6. 发明申请

WO2015094988A1 BUILT-IN BYPASS DIODE 审中-公开
标题翻译：内置旁路二极管
公开(公告)号：WO2015094988A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/070164
申请日：2014-12-12
申请人： SUNPOWER CORPORATION
发明人： SMITH, David D. , RIM, Seung Bum
IPC分类号： H01L31/044
CPC分类号： H01L31/02167 , H01L27/1421 , H01L31/022441 , H01L31/0443 , H01L31/0745 , Y02E10/50
摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
摘要翻译：旁路二极管可以包括设置在太阳能电池的衬底上方的第一导电类型的第一导电区域和设置在第一导电区域上方的第二导电类型的第二导电区域。旁路二极管可以包括直接设置在第一和第二导电区域之间的薄介电区域。

7. 发明申请

WO2014099322A1 ENHANCED ADHESION OF SEED LAYER FOR SOLAR CELL CONDUCTIVE CONTACT 审中-公开
标题翻译：用于太阳能电池导电接触的增强层粘合剂
公开(公告)号：WO2014099322A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/072421
申请日：2013-11-27
申请人： SUNPOWER CORPORATION , WU, Junbo , JOHNSON, Michael C. , CUDZINOVIC, Michael , BEHNKE, Joseph , ZHU, Xi , SMITH, David D. , SEWELL, Richard Hamilton , TU, Xiuwen , RIM, Seung Bum
发明人： WU, Junbo , JOHNSON, Michael C. , CUDZINOVIC, Michael , ZHU, Xi , SMITH, David D. , SEWELL, Richard Hamilton , TU, Xiuwen , RIM, Seung Bum
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/022441 , H01L31/0682 , H01L31/1864 , Y02E10/50 , Y02E10/547
摘要： Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.
摘要翻译：描述了用于太阳能电池导电触点的种子层的增强的附着和形成太阳能电池导电触点的方法。例如，制造太阳能电池的方法包括在基板的发射极区域的上方形成粘附层。在粘合层上形成金属种子糊层。将金属种子糊层和粘附层退火以形成与衬底的发射极区域接触的导电层。用于太阳能电池的导电接触由导电层形成。

8. 发明申请

WO2016160535A1 PASSIVATION LAYER FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池的钝化层
公开(公告)号：WO2016160535A1
公开(公告)日：2016-10-06
申请号：PCT/US2016/024120
申请日：2016-03-24
申请人： SUNPOWER CORPORATION
发明人： RIM, Seung Bum , SMITH, David D. , JOHNSON, Michael C. , SIMMONS, Christine Bourdet
IPC分类号： H01L31/0392 , H01L31/036 , H01L31/077 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/0747 , Y02E10/50
摘要： Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.
摘要翻译：描述了制造具有钝化层的太阳能电池的方法和所得到的太阳能电池。在一个示例中，太阳能电池包括具有第一表面和第二表面的基板。多个发射极区域设置在基板的第一表面上并且彼此间隔开。非晶硅钝化层设置在多个发射极区域中的每一个上，并且在多个发射极区域中的每一个之间，直接位于衬底的第一表面的暴露部分上。

9. 发明申请

WO2016106252A1 SOLAR CELLS WITH IMPROVED LIFETIME, PASSIVATION AND/OR EFFICIENCY 审中-公开
标题翻译：具有改善的生命和/或效率的太阳能电池
公开(公告)号：WO2016106252A1
公开(公告)日：2016-06-30
申请号：PCT/US2015/067220
申请日：2015-12-21
申请人： SUNPOWER CORPORATION
发明人： SMITH, David D. , DENNIS, Tim , TABAJONDA, Russelle De Jesus
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/0368 , H01L31/14
CPC分类号： H01L31/02008 , H01L21/3221 , H01L31/02167 , H01L31/022441 , H01L31/0368 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
摘要翻译：制造太阳能电池的方法可以包括在硅衬底上形成电介质区域。该方法还可以包括在电介质区域上形成发射极区域，并在硅衬底的表面上形成掺杂区域。在一个实施例中，该方法可以包括在高于900摄氏度的温度下加热硅衬底以将杂质吸收到发射极区域，并将掺杂剂从掺杂剂区域驱动到硅衬底的一部分。

10. 发明申请

WO2015047950A1 EPITAXIAL SILICON SOLAR CELLS WITH MOISTURE BARRIER 审中-公开
标题翻译：具有水分阻挡层的外延硅太阳能电池
公开(公告)号：WO2015047950A1
公开(公告)日：2015-04-02
申请号：PCT/US2014/056786
申请日：2014-09-22
申请人： SUNPOWER CORPORATION
发明人： SMITH, David D.
IPC分类号： H01L31/00
CPC分类号： H01L31/02167 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A thin epitaxial silicon solar cell includes one or more layers of doped oxides on the backside. A silicon nitride layer that serves as a moisture barrier is formed on the one or more layers of doped oxides (207). The doped oxides provide dopants for forming doped regions in an epitaxial silicon layer. Metal contacts are electrically coupled to the doped regions through the silicon nitride layer and the one or more layers of doped oxides (208, 209).
摘要翻译：薄的外延硅太阳能电池在背面包括一层或多层掺杂的氧化物。在一层或多层掺杂氧化物（207）上形成用作防潮层的氮化硅层。掺杂的氧化物提供用于在外延硅层中形成掺杂区的掺杂剂。金属触点通过氮化硅层和一个或多个掺杂氧化物层（208,209）电耦合到掺杂区域。

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