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1. 发明申请

WO2014098982A1 SOLAR CELL EMITTER REGION FABRICATION USING N-TYPE DOPED SILICON NANO-PARTICLES 审中-公开
标题翻译：使用N型掺杂硅纳米颗粒的太阳能电池区域制造
公开(公告)号：WO2014098982A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/046435
申请日：2013-06-18
申请人： SUNPOWER CORPORATION , LOSCUTOFF, Paul , COUSINS, Peter J. , MOLESA, Steven Edward , WALDHAUER, Ann
发明人： LOSCUTOFF, Paul , COUSINS, Peter J. , MOLESA, Steven Edward , WALDHAUER, Ann
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/03529 , H01L31/0682 , Y02E10/547 , Y10S977/773
摘要： Methods of fabricating solar cell emitter regions using N-type doped silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. At least a portion of the P-type dopant-containing layer is mixed with at least a portion of each of the plurality of regions of N-type doped silicon nano-particles.
摘要翻译：描述了使用N型掺杂硅纳米颗粒制造太阳能电池发射极区域的方法和所得到的太阳能电池。在一个示例中，制造太阳能电池的发射极区域的方法包括在太阳能电池的基板的第一表面上形成多个N型掺杂的硅纳米颗粒区域。在N型掺杂硅纳米颗粒的多个区域上形成P型掺杂剂层，并且在N型掺杂硅纳米颗粒的区域之间的衬底的第一表面上形成P型掺杂剂层。含P型掺杂剂层的至少一部分与N型掺杂硅纳米粒子的多个区域的至少一部分混合。

2. 发明申请

WO2014099321A1 SOLAR CELL EMITTER REGION FABRICATION USING ETCH RESISTANT FILM 审中-公开
标题翻译：太阳能电池发射区使用耐蚀膜进行制造
公开(公告)号：WO2014099321A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/072418
申请日：2013-11-27
申请人： SUNPOWER CORPORATION , LOSCUTOFF, Paul , COUSINS, Peter J.
发明人： LOSCUTOFF, Paul , COUSINS, Peter J.
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022441 , H01L31/02363 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using etch resistant films and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. A capping layer is formed on the P-type dopant-containing layer. An etch resistant layer is formed on the capping layer. A second surface of the substrate, opposite the first surface, is etched to texturize the second surface of the substrate. The etch resistant layer protects the capping layer and the P-type dopant-containing layer during the etching.
摘要翻译：描述了使用耐腐蚀膜和所得太阳能电池制造太阳能电池发射极区域的方法。在一个示例中，制造太阳能电池的发射极区域的方法包括在太阳能电池的基板的第一表面上形成多个N型掺杂的硅纳米颗粒区域。在N型掺杂硅纳米颗粒的多个区域上形成P型含掺杂剂层，并且在N型掺杂硅纳米颗粒的区域之间的衬底的第一表面上形成P型掺杂剂层。在P型掺杂剂层上形成覆盖层。在覆盖层上形成耐蚀刻层。衬底的与第一表面相对的第二表面被蚀刻以使衬底的第二表面纹理化。耐腐蚀层在蚀刻期间保护覆盖层和P型掺杂剂层。

3. 发明申请

WO2013058724A2 BYPASS DIODE FOR A SOLAR CELL 审中-公开
标题翻译：用于太阳能电池的旁路二极管
公开(公告)号：WO2013058724A2
公开(公告)日：2013-04-25
申请号：PCT/US2011/054607
申请日：2011-10-03
申请人： SUNPOWER CORPORATION , RIM, Seung Bum , KIM, Taeseok , SMITH, David D. , COUSINS, Peter J.
发明人： RIM, Seung Bum , KIM, Taeseok , SMITH, David D. , COUSINS, Peter J.
IPC分类号： H01L31/042 , H01L31/06 , H01L31/18
CPC分类号： H01L29/861 , H01L31/022441 , H01L31/0443 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.
摘要翻译：描述了用于太阳能电池的旁路二极管。在一个实施例中，用于太阳能电池的旁路二极管包括太阳能电池的基板。第一导电区域设置在衬底上方，第一导电类型的第一导电区域。第二导电区域设置在第一导电区域上，第二导电区域具有与第一导电类型相反的第二导电类型。

4. 发明申请

WO2020069419A1 SOLAR CELL WITH WRAPAROUND FINGER 审中-公开
公开(公告)号：WO2020069419A1
公开(公告)日：2020-04-02
申请号：PCT/US2019/053621
申请日：2019-09-27
申请人： SUNPOWER CORPORATION
发明人： REICH, Matthieu Minault , ABRA, Lewis C. , KAVULAK, David Fredic Joel , BOWRING, Andrea R. , FRANCOIS, Benjamin , COUSINS, Peter J. , BASTIAN, Boris , HSIA, Benjamin I. , MANALO, Raphael M.
IPC分类号： H01L31/02 , H01L31/0224 , H01L31/18
摘要： A solar cell can include a first plurality of metal contact fingers, and a second plurality of metal contact fingers interdigitated with the first plurality of metal contact fingers, wherein at least one of the first plurality of metal contact fingers comprises a wrap¬ around metal finger that passes between a first edge of the solar cell and at least one contact pads. A photovoltaic (PV) string including a solar cell with a wrap-around metal contact finger. A method of coupling an electrically conductive connector to a solar cell with a wrap-around metal contact finger.

5. 发明申请

WO2013141917A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：具有宽带束半导体材料的发射极区域的太阳能电池
公开(公告)号：WO2013141917A1
公开(公告)日：2013-09-26
申请号：PCT/US2012/070711
申请日：2012-12-19
申请人： SUNPOWER CORPORATION
发明人： SWANSON, Richard M. , BUNEA, Marius M. , SMITH, David D. , SHEN, Yu-Chen , COUSINS, Peter J. , DENNIS, Tim
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中，在太阳能电池的半导体衬底的表面上形成薄的电介质层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

6. 发明申请

WO2013096500A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL 审中-公开
标题翻译：混合聚苯醚复合接触电池
公开(公告)号：WO2013096500A1
公开(公告)日：2013-06-27
申请号：PCT/US2012/070709
申请日：2012-12-19
申请人： SUNPOWER CORPORATION
发明人： COUSINS, Peter J. , SMITH, David D. , RIM, Seung B.
IPC分类号： H01L31/072 , H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/022441 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
摘要翻译：公开了一种制造高效太阳能电池的方法。该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。镀金属指可以形成第一金属网格线。可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

7. 发明公开

EP3073537A1 SOLAR CELL WITH REDUCED BASE DIFFUSION AREA 无效转让
标题翻译： SOLARZELLE MIT VERRINGERTEM BASISDIFFUSIONSBEREICH
公开(公告)号：EP3073537A1
公开(公告)日：2016-09-28
申请号：EP16169171.2
申请日：2007-06-06
申请人： SunPower Corporation
发明人： DE CEUSTER, Denis , COUSINS, Peter J.
IPC分类号： H01L31/061 , H01L31/068 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/022441 , H01L31/061 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.
摘要翻译：在一个实施例中，太阳能电池具有形成在背面的基极和发射极扩散区域。发射极扩散区被配置为收集太阳能电池中的少数电荷载流子，而基极扩散区被配置成收集多数电荷载流子。发射极扩散区域可以是分离基极扩散区域的连续区域。每个基底扩散区域可以具有减小的面积以减少少数电荷载流子复合损耗，而不会由于多数电荷载流子的横向流动而基本上增加串联电阻损耗。例如，每个基底扩散区域可以具有点状。

8. 发明公开

EP2828897A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 有权转让
标题翻译： SOLARZELLE MIT EINER EMITTERZONE MIT HALBLEITERMATERIAL MIT BREITEM BANDABSTAND
公开(公告)号：EP2828897A1
公开(公告)日：2015-01-28
申请号：EP12871937.4
申请日：2012-12-19
申请人： SunPower Corporation
发明人： SWANSON, Richard M. , BUNEA, Marius M. , SMITH, David D. , SHEN, Yu-Chen , COUSINS, Peter J. , DENNIS, Tim
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中，在太阳能电池的半导体衬底的表面上形成薄的电介质层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

9. 发明公开

EP2652795A2 BYPASS DIODE FOR A SOLAR CELL 审中-公开
标题翻译：旁路二极管，用于太阳能电池
公开(公告)号：EP2652795A2
公开(公告)日：2013-10-23
申请号：EP11869509.7
申请日：2011-10-03
申请人： Sunpower Corporation
发明人： RIM, Seung Bum , KIM, Taeseok , SMITH, David D. , COUSINS, Peter J.
IPC分类号： H01L31/042 , H01L31/06 , H01L31/18
CPC分类号： H01L29/861 , H01L31/022441 , H01L31/0443 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

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