会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • SOLAR CELL EMITTER REGION FABRICATION USING ETCH RESISTANT FILM
    • 太阳能电池发射区使用耐蚀膜进行制造
    • WO2014099321A1
    • 2014-06-26
    • PCT/US2013/072418
    • 2013-11-27
    • SUNPOWER CORPORATIONLOSCUTOFF, PaulCOUSINS, Peter J.
    • LOSCUTOFF, PaulCOUSINS, Peter J.
    • H01L31/04H01L31/18
    • H01L31/18H01L31/022441H01L31/02363H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • Methods of fabricating solar cell emitter regions using etch resistant films and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. A capping layer is formed on the P-type dopant-containing layer. An etch resistant layer is formed on the capping layer. A second surface of the substrate, opposite the first surface, is etched to texturize the second surface of the substrate. The etch resistant layer protects the capping layer and the P-type dopant-containing layer during the etching.
    • 描述了使用耐腐蚀膜和所得太阳能电池制造太阳能电池发射极区域的方法。 在一个示例中,制造太阳能电池的发射极区域的方法包括在太阳能电池的基板的第一表面上形成多个N型掺杂的硅纳米颗粒区域。 在N型掺杂硅纳米颗粒的多个区域上形成P型含掺杂剂层,并且在N型掺杂硅纳米颗粒的区域之间的衬底的第一表面上形成P型掺杂剂层。 在P型掺杂剂层上形成覆盖层。 在覆盖层上形成耐蚀刻层。 衬底的与第一表面相对的第二表面被蚀刻以使衬底的第二表面纹理化。 耐腐蚀层在蚀刻期间保护覆盖层和P型掺杂剂层。
    • 5. 发明申请
    • HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL
    • 混合聚苯醚复合接触电池
    • WO2013096500A1
    • 2013-06-27
    • PCT/US2012/070709
    • 2012-12-19
    • SUNPOWER CORPORATION
    • COUSINS, Peter J.SMITH, David D.RIM, Seung B.
    • H01L31/072H01L31/042H01L31/0216H01L31/18
    • H01L31/02168H01L31/022441H01L31/0747H01L31/1804Y02E10/547Y02P70/521
    • A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
    • 公开了一种制造高效太阳能电池的方法。 该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。 随后,可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。 然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。 镀金属指可以形成第一金属网格线。 可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线,从而消除了对第二金属网格线的接触开口的需要。 其中优点在于,制造方法提供了降低的热处理,降低的蚀刻步骤,提高的效率以及用于制造高效率太阳能电池的简化程序。