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1. 发明申请

WO2009151809A1 TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS 审中-公开
标题翻译：背景接触太阳能电池与多晶硅区域的工艺和结构
公开(公告)号：WO2009151809A1
公开(公告)日：2009-12-17
申请号：PCT/US2009/042135
申请日：2009-04-29
申请人： SUNPOWER CORPORATION , DE CEUSTER, Denis , COUSINS, Peter, John , SMITH, David, D
发明人： DE CEUSTER, Denis , COUSINS, Peter, John , SMITH, David, D
IPC分类号： H01L31/04
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell (721) includes polysilicon P-type and N-type doped regions on a backside (721) of a substrate, such as a silicon wafer. An interrupted trench (800) structure separates the P-type doped region (101) from the N-type doped region (102) in some locations but allows the P-type doped region (101) and the N-type doped region (102) to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
摘要翻译：太阳能电池（721）在诸如硅晶片的基板的背面（721）上包括多晶硅P型和N型掺杂区域。中断沟槽（800）结构在某些位置将P型掺杂区域（101）与N型掺杂区域（102）分开，但允许P型掺杂区域（101）和N型掺杂区域（102））触摸其他位置。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

2. 发明申请

WO2013028433A1 HIGH THROUGHPUT LASER ABLATION PROCESSES AND STRUCTURES FOR FORMING CONTACT HOLES IN SOLAR CELLS 审中-公开
标题翻译：用于在太阳能电池中形成接触孔的高通量激光吸收过程和结构
公开(公告)号：WO2013028433A1
公开(公告)日：2013-02-28
申请号：PCT/US2012/050950
申请日：2012-08-15
申请人： SUNPOWER CORPORATION , KIM, Taeseok , HARLEY, Gabriel , SMITH, David, D. , COUSINS, Peter, John
发明人： KIM, Taeseok , HARLEY, Gabriel , SMITH, David, D. , COUSINS, Peter, John
IPC分类号： H01L31/00
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： Contact holes of solar cells (300) are formed by laser ablation to accommodate various solar cell designs. Throughput of the solar cell ablation process is improved by incorporating linear base diffusion regions with narrow width, for example as compared to an overlying metal contact. Throughput of the solar cell ablation process may also be improved by having contact holes to base diffusion regions that are perpendicular to contact holes to emitter diffusion regions. To allow for continuous laser scanning, a laser blocking layer may be located over an interlayer dielectric to prevent contact hole formation on certain regions, such as regions where a metal contact of one polarity may electrically shunt to a diffusion region of opposite polarity. In a hybrid design, a solar cell may have both linear and dotted base diffusion regions. An electro-optical modulator may be employed to allow for continuous laser scanning in dotted base diffusion designs.
摘要翻译：通过激光烧蚀形成太阳能电池（300）的接触孔，以适应各种太阳能电池设计。通过结合具有窄宽度的线性基极扩散区域，例如与覆盖的金属接触相比，改善了太阳能电池烧蚀过程的吞吐量。通过将与接触孔垂直的基底扩散区域的接触孔设置到发射极扩散区域，也可以改善太阳能电池烧蚀过程的吞吐量。为了允许连续激光扫描，激光阻挡层可以位于层间电介质上方，以防止在某些区域（例如一个极性的金属接触可以电分流到相反极性的扩散区域的区域）上的接触孔形成。在混合设计中，太阳能电池可以具有线性和点状的基极扩散区域。可以使用电光调制器来允许在虚点扩散设计中的连续激光扫描。

3. 发明申请

WO2010098907A1 BACK CONTACT SLIVER CELLS 审中-公开
标题翻译：返回联系塞维利亚细胞
公开(公告)号：WO2010098907A1
公开(公告)日：2010-09-02
申请号：PCT/US2010/021406
申请日：2010-01-19
申请人： SUNPOWER CORPORATION , COUSINS, Peter, John
发明人： COUSINS, Peter, John
IPC分类号： H01L21/00
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/022441 , H01L31/028 , H01L31/03529 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell uses a sliver (130) of a silicon wafer (101) as a substrate. The sliver (130) has a front side that faces the sun during normal operation. The front side of the sliver (130) includes a surface from along a thickness of the wafer (101 ), allowing for more efficient use of silicon. Metal contacts (114 and 115) are formed on the back side of the sliver (130). The metal contacts (114 and 115) electrically connect to the emitter and base of the solar cell, which may be formed within the sliver (130) or be made of polysilicon. The emitter of the solar cell may be a P-type doped region (125) and the base of the solar cell may be an N-type doped region (124), for example. The solar cell may include an anti- reflective coating (107) formed on the front side of the sliver (130). The anti- reflective coating (107) may be over a textured surface on the front side of the sliver (130).
摘要翻译：太阳能电池使用硅晶片（101）的条（130）作为基板。条子（130）在正常操作期间具有面向太阳的前侧。纱条（130）的前侧包括沿着晶片（101）的厚度的表面，允许更有效地使用硅。金属触点（114和115）形成在条子（130）的背面。金属触点（114和115）电连接到太阳能电池的发射极和基极，其可以形成在条子（130）内或由多晶硅制成。太阳能电池的发射极可以是P型掺杂区域（125），并且太阳能电池的基底可以是例如N型掺杂区域（124）。太阳能电池可以包括形成在条子（130）的前侧上的抗反射涂层（107）。抗反射涂层（107）可以在纱条（130）的前侧上的纹理表面上方。

4. 发明申请

WO2007130188A2 SOLAR CELL HAVING DOPED SEMICONDUCTOR HETEROJUNCTION CONTACTS 审中-公开
标题翻译：具有二极管半导体异质接触的太阳能电池
公开(公告)号：WO2007130188A2
公开(公告)日：2007-11-15
申请号：PCT/US2007/003459
申请日：2007-02-09
申请人： SUNPOWER CORPORATION , COUSINS, Peter, John
发明人： COUSINS, Peter, John
IPC分类号： H01L31/00
CPC分类号： H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/02366 , H01L31/03682 , H01L31/03762 , H01L31/03921 , H01L31/068 , H01L31/074 , H01L31/0745 , H01L31/0747 , H01L31/1804 , Y02E10/50 , Y02E10/548 , Y02P70/521
摘要： A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
摘要翻译：硅太阳能电池已经在硅衬底的表面上形成在隧道氧化硅层上的掺杂非晶硅接触。制造太阳能电池时不需要高温处理。

5. 发明申请

WO2010002635A1 FRONT CONTACT SOLAR CELL WITH FORMED ELECTRICALLY CONDUCTING LAYERS ON THE FRONT SIDE AND BACKSIDE 审中-公开
标题翻译：前端接触太阳能电池与正面和背面形成电导电层
公开(公告)号：WO2010002635A1
公开(公告)日：2010-01-07
申请号：PCT/US2009/048295
申请日：2009-06-23
申请人： SUNPOWER CORPORATION , COUSINS, Peter, John
发明人： COUSINS, Peter, John
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02168 , H01L31/022433 , H01L31/0236 , H01L31/02363 , H01L31/03682 , H01L31/056 , H01L31/072 , H01L31/0745 , H01L31/1804 , H01L31/182 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A bipolar solar cell (100) includes a backside junction formed by a silicon substrate (101) and a first doped layer (108) of a first dopant type on the backside of the solar cell. A second doped layer (106) of a second dopant type makes an electrical connection to the substrate (101) from the front side of the solar cell (100). A first metal contact (110) of a first electrical polarity electrically connects to the first doped layer (108) on the backside of the solar cell, and a second metal contact (102) of a second electrical polarity electrically connects to the second doped layer (106) on the front side of the solar cell (100). An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell (100).
摘要翻译：双极太阳能电池（100）包括由太阳能电池的背面由硅衬底（101）和第一掺杂剂类型的第一掺杂层（108）形成的背面结。第二掺杂剂型的第二掺杂层（106）从太阳能电池（100）的正面与基板（101）形成电连接。第一电极性的第一金属触点（110）电连接到太阳能电池的背面上的第一掺杂层（108），并且第二电极性的第二金属触点（102）电连接到第二掺杂层（106）在太阳能电池（100）的前侧。外部电路可以电连接到由太阳能电池（100）供电的第一和第二金属触点。

6. 发明申请

WO2008150344A1 ARRAY OF SMALL CONTACTS FOR SOLAR CELL FABRICATION 审中-公开
标题翻译：用于太阳能电池制造的小型接触阵列
公开(公告)号：WO2008150344A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/006017
申请日：2008-05-12
申请人： SUNPOWER CORPORATION , COUSINS, Peter, John , CUDZINOVIC, Michael, J.
发明人： COUSINS, Peter, John , CUDZINOVIC, Michael, J.
IPC分类号： H01L25/00
CPC分类号： H01L31/022425 , H01L21/0337 , H01L21/31144 , H01L21/76802 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： Fabrication of a solar cell using a printed contact mask (400). The contact mask (400) may include dots (306) formed by inkjet printing. The dots (306) may be formed in openings between dielectric layers (e.g., polyimide). Intersections of overlapping dots (306) may form gaps (321) that define contact regions. The spacing of the gaps (321) may be dictated by the alignment of nozzles that dispense the dots (306). Using the dots (306) as a contact mask (400), an underlying dielectric layer may be etched to form the contact regions through the underlying dielectric layer. Metal contact fingers may be formed over the wafer to form electrical connections to corresponding diffusion regions through the contact regions.
摘要翻译：使用印刷接触掩模（400）制造太阳能电池。接触掩模（400）可以包括通过喷墨印刷形成的点（306）。点（306）可以形成在电介质层（例如，聚酰亚胺）之间的开口中。重叠点（306）的交点可以形成限定接触区域的间隙（321）。间隙（321）的间隔可以由分配点（306）的喷嘴的对准来决定。使用点（306）作为接触掩模（400），可以蚀刻下面的介电层以通过下面的介电层形成接触区域。金属接触指可以形成在晶片之上，以形成通过接触区域的相应扩散区域的电连接。

7. 发明申请

WO2006005116A1 LASER-FORMED ELECTRODES FOR SOLAR CELLS 审中-公开
标题翻译：用于太阳能电池的激光形成电极
公开(公告)号：WO2006005116A1
公开(公告)日：2006-01-19
申请号：PCT/AU2005/001006
申请日：2005-07-08
申请人： UNISEARCH LIMITED , GUO, Jiun-Hua , COUSINS, Peter, John , COTTER, Jeffrey, Ellis , ABBOTT, Malcolm, David
发明人： GUO, Jiun-Hua , COUSINS, Peter, John , COTTER, Jeffrey, Ellis , ABBOTT, Malcolm, David
IPC分类号： H01L31/0224
CPC分类号： H01L31/065 , H01L31/022425 , H01L31/022433 , H01L31/0236 , H01L31/02363 , Y02E10/50
摘要： A method of forming electrodes for solar cells, the method comprising: depositing a dielectric layer (300) on a surface of a semiconductor layer (302) of the solar cell, laser ablating the dielectric layer to form a series of openings (304), each opening extending through the entire thickness of the dielectric layer (300), forming doped regions (305) in the semiconductor layer exposed in the openings, forming metal-semiconductor electrical contacts in the respective openings, wherein deposited metal is in contact with the formed doped semiconductor regions (305) through the respective openings (304), and forming a metal contact (306) electrically interconnecting the metal-semiconductor contacts, wherein the metal contact is formed such that the respective openings (304) are filled with metal through the entire thickness of the dielectric layer (300) and the metal interconnects adjacent metal-semiconductor contacts.
摘要翻译：一种形成太阳能电池用电极的方法，所述方法包括：在所述太阳能电池的半导体层（302）的表面上沉积电介质层（300），激光烧蚀所述电介质层以形成一系列开口（304），每个开口延伸穿过介电层（300）的整个厚度，在暴露在开口中的半导体层中形成掺杂区域（305），在相应的开口中形成金属 - 半导体电触点，其中沉积的金属与形成的金属掺杂的半导体区域（305），并且形成金属接触件（306），金属接触件（306）将金属 - 半导体接触件电互连，其中金属接触件形成为使得相应的开口（304）通过电介质层（300）的整个厚度和金属互连相邻的金属 - 半导体触点。

8. 发明公开

EP2401758A1 BACK CONTACT SLIVER CELLS 审中-公开
标题翻译： SPALTZELLEN MITRÜCKSEITENKONTAKT
公开(公告)号：EP2401758A1
公开(公告)日：2012-01-04
申请号：EP10746588.2
申请日：2010-01-19
申请人： SunPower Corporation
发明人： COUSINS, Peter, John
IPC分类号： H01L21/00
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/022441 , H01L31/028 , H01L31/03529 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell uses a sliver (130) of a silicon wafer (101) as a substrate. The sliver (130) has a front side that faces the sun during normal operation. The front side of the sliver (130) includes a surface from along a thickness of the wafer (101 ), allowing for more efficient use of silicon. Metal contacts (114 and 115) are formed on the back side of the sliver (130). The metal contacts (114 and 115) electrically connect to the emitter and base of the solar cell, which may be formed within the sliver (130) or be made of polysilicon. The emitter of the solar cell may be a P-type doped region (125) and the base of the solar cell may be an N-type doped region (124), for example. The solar cell may include an anti- reflective coating (107) formed on the front side of the sliver (130). The anti- reflective coating (107) may be over a textured surface on the front side of the sliver (130).
摘要翻译：太阳能电池使用硅晶片的条子作为基板。在正常操作期间，条子具有面向太阳的前侧。纱条的前侧包括沿着晶片的厚度的表面，允许更有效地使用硅。金属触点形成在条子的背面。金属触点电连接到太阳能电池的发射极和基极，其可以形成在条子内或由多晶硅制成。太阳能电池的发射极可以是P型掺杂区域，例如，太阳能电池的基底可以是N型掺杂区域。太阳能电池可以包括形成在条子的前侧上的抗反射涂层。抗反射涂层可以在条子的前侧上的纹理表面上。

9. 发明授权

EP2311102B1 FRONT CONTACT SOLAR CELL WITH FORMED ELECTRICALLY CONDUCTING LAYERS ON THE FRONT SIDE AND BACKSIDE 有权转让
公开(公告)号：EP2311102B1
公开(公告)日：2019-01-16
申请号：EP09774087.2
申请日：2009-06-23
申请人： Sunpower Corporation
发明人： COUSINS, Peter, John
IPC分类号： H01L31/18

10. 发明授权

EP2297789B1 TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS 有权转让
标题翻译：与POLYSILICIUMDOTIERTEN地区抓斗工艺和结构背接触太阳能电池
公开(公告)号：EP2297789B1
公开(公告)日：2015-08-05
申请号：EP09763100.6
申请日：2009-04-29
申请人： Sunpower Corporation
发明人： DE CEUSTER, Denis , COUSINS, Peter, John , SMITH, David, D
IPC分类号： H01L31/0745 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside (106) of a substrate (103), such as a silicon wafer. A trench structure (104) separates the P-type doped region (101) from the N-type doped region (102). Each of the P-type and N-type doped regions may be formed over a thin dielectric layer (113). The trench structure (104) may include a textured surface (114) for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

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