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1. 发明申请

WO2013022479A2 HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 审中-公开
标题翻译：高效太阳能光伏电池和使用薄晶体半导体吸收器的模块
公开(公告)号：WO2013022479A2
公开(公告)日：2013-02-14
申请号：PCT/US2012/000348
申请日：2012-08-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, K.-Josef , RANA, Virendra, V. , SEUTTER, Sean , DESHPANDE, Anand , CALCATERRA, Anthony , OLSEN, Gerry , MANTEGHI, Kamran , STALCUP, Thom , KAMIAN, George, D. , WANG, David, Xuan-Qi , SU, Yen-Sheng , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, K.-Josef , RANA, Virendra, V. , SEUTTER, Sean , DESHPANDE, Anand , CALCATERRA, Anthony , OLSEN, Gerry , MANTEGHI, Kamran , STALCUP, Thom , KAMIAN, George, D. , WANG, David, Xuan-Qi , SU, Yen-Sheng , WINGERT, Michael
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构以及用于形成薄膜背接触太阳能电池的制造方法和结构。

2. 发明申请

WO2011072161A2 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THIN PLANAR SEMICONDUCTORS 审中-公开
标题翻译：高效光伏反接触太阳能电池结构和使用薄平面半导体的制造方法
公开(公告)号：WO2011072161A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/059759
申请日：2010-12-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-Josef , WANG, David, Xuan-Qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-Josef , WANG, David, Xuan-Qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel
IPC分类号： H01L31/042 , H01L31/0216
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.
摘要翻译：提供背接触式太阳能电池及制造方法。背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

3. 发明申请

WO2011072153A2 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS 审中-公开
标题翻译：高效率光伏背接触太阳能电池结构及使用三维半导体吸收剂的制造方法
公开(公告)号：WO2011072153A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/059748
申请日：2010-12-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad M. , KAPUR, Pawan , KRAMER, Karl-Josef , WANG, David, Xuan-Qi , SEUTTER, Sean , RANA, Virendra V.
发明人： MOSLEHI, Mehrdad M. , KAPUR, Pawan , KRAMER, Karl-Josef , WANG, David, Xuan-Qi , SEUTTER, Sean , RANA, Virendra V.
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.
摘要翻译：提供了背接触背结三维太阳能电池和用于制造的方法。背接触背接触背结三维太阳能电池包括三维基板。衬底包括具有钝化层，掺杂基极区和掺杂背面发射极区的光捕获正面表面，极性与掺杂基极区相反。背面钝化层位于掺杂的背面发射极区域上。背侧发射极触点和背侧基极触点连接到金属互连，并选择性地形成在三维太阳能电池背面的三维特征上。

4. 发明申请

WO2013055307A2 BACKPLANE REINFORCEMENT AND INTERCONNECTS FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池的背板加固和互连
公开(公告)号：WO2013055307A2
公开(公告)日：2013-04-18
申请号：PCT/US2011/046873
申请日：2011-08-05
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , WANG, David, Xuan-Qi , KRAMER, Karl-Josef , SEUTTER, Sean , TOR, Sam, Tone , CALCATERRA, Anthony
发明人： MOSLEHI, Mehrdad, M. , WANG, David, Xuan-Qi , KRAMER, Karl-Josef , SEUTTER, Sean , TOR, Sam, Tone , CALCATERRA, Anthony
IPC分类号： H01L31/042 , H01L31/05 , H01L31/18
CPC分类号： H01L31/022458 , H01L31/02008 , H01L31/02013 , H01L31/022441 , H01L31/028 , H01L31/0516 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/50
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，在交叉图案上形成导电发射器插头和基座插头，并且附接具有第二互补图案的基极和发射极的背板在导电发射器和基座插头上形成电互连。

5. 发明申请

WO2012099701A1 METHOD FOR RECONSTRUCTING A SEMICONDUCTOR TEMPLATE 审中-公开
标题翻译：重构半导体模板的方法
公开(公告)号：WO2012099701A1
公开(公告)日：2012-07-26
申请号：PCT/US2011/068270
申请日：2011-12-31
申请人： SOLEXEL, INC. , KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , WANG, David, Xuan-Qi , KAVARI, Rahim , RICOLCOL, Rafael , ASHJAEE, Jay
发明人： KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , WANG, David, Xuan-Qi , KAVARI, Rahim , RICOLCOL, Rafael , ASHJAEE, Jay
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/1892 , H01L21/02381 , H01L21/0243 , H01L21/02513 , Y02E10/50
摘要： The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a substrate or template used in the manufacturing process of silicon solar cells. Further, methods are disclosed which provide for the conversion of a low quality starting surface into an improved quality starting surface of a silicon wafer.
摘要翻译：所公开的主题一般涉及薄膜或薄箔材料的沉积，更具体地涉及用于制造高效率太阳能电池的外延单晶或准单晶硅膜（epi膜）的沉积。在操作中，公开了延长可再利用寿命并降低在硅太阳能电池的制造过程中使用的基板或模板的摊销成本的方法。此外，公开了提供将低质量起始表面转化为硅晶片的改进质量起始表面的方法。

6. 发明申请

WO2010111417A1 METHOD FOR FABRICATING A THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE FROM A TEMPLATE 审中-公开
标题翻译：从模板制造三维薄膜半导体基板的方法
公开(公告)号：WO2010111417A1
公开(公告)日：2010-09-30
申请号：PCT/US2010/028534
申请日：2010-03-24
申请人： SOLEXEL, INC. , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L31/00
CPC分类号： H01L31/035281 , C30B29/06 , C30B31/22 , H01L31/1892 , Y02E10/50
摘要： A method is presented for fabrication of a three-dimensional thin-film solar cell semiconductor substrate from a template. A semiconductor template having three-dimensional surface features comprising a top surfaces substantially aligned along a (100) crystallographic plane of semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls substantially aligned along a (111) crystallographic plane is formed according to an anisotropic etching process. A dose of relatively of high energy light-mass species is implanted in the template at a uniform depth and parallel to the top surfaces and said sidewalls defining the inverted pyramidal cavities of the template. The semiconductor template is annealed to convert the dose of relatively of high energy light-mass species to a mechanically-weak-thin layer. The semiconductor template is cleaved along the mechanically-weak-thin layer to release a three- dimensional thin-film semiconductor substrate from the semiconductor template.
摘要翻译：介绍了从模板制造三维薄膜太阳能电池半导体衬底的方法。具有三维表面特征的半导体模板包括沿着半导体模板的（100）结晶平面基本上对准的顶表面和由沿（111）晶面平行排列的侧壁限定的多个倒置金字塔形腔，根据各向异性蚀刻工艺。将相对高能量光质物质的剂量以均匀的深度注入模板中，并平行于顶表面和限定模板的倒锥形腔的所述侧壁。将半导体模板退火以将相对较高能量的光质物质的剂量转换成机械弱薄层。半导体模板沿着机械弱薄层切割，从半导体模板释放三维薄膜半导体衬底。

7. 发明申请

WO2010057060A3 METHODS AND SYSTEMS FOR MANUFACTURING THIN-FILM SOLAR CELLS 审中-公开
公开(公告)号：WO2010057060A3
公开(公告)日：2010-05-20
申请号：PCT/US2009/064484
申请日：2009-11-13
申请人： SOLEXEL, INC. , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L31/0368
摘要： Methods and systems for manufacturing thin-film solar cells utilizing a template having inverted pyramidal cavities defined by a plurality of walls aligned along a (111) crystallographic orientation plane and methods for manufacturing the template. Methods and systems for manufacturing thin-film solar cells utilizing a 3-D TFSS having a plurality of ridges on the surface of the semiconductor substrate defining a base opening of an inverted pyramidal cavity and walls defining an inverted pyramidal cavity and methods for manufacturing the 3-D TFSS. A 3-D TFSC comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity and methods for manufacturing the 3-D TFSC.

8. 发明申请

WO2009026240A8 METHODS FOR LIQUID TRANSFER COATING OF THREE-DIMENSIONAL SUBSTRATES 审中-公开
公开(公告)号：WO2009026240A8
公开(公告)日：2009-02-26
申请号：PCT/US2008/073499
申请日：2008-08-18
申请人： SOLEXEL, INC. , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M. , NAG, Somnath
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M. , NAG, Somnath
IPC分类号： B05D1/36 , B05D5/00 , H01L21/00
摘要： Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

9. 发明申请

WO2010102306A1 METHOD FOR RELEASING A THIN-FILM SUBSTRATE 审中-公开
标题翻译：用于释放薄膜基板的方法
公开(公告)号：WO2010102306A1
公开(公告)日：2010-09-10
申请号：PCT/US2010/026570
申请日：2010-03-08
申请人： SOLEXEL, INC. , RICOLCOL, Rafael , KRAMER, Joe , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
发明人： RICOLCOL, Rafael , KRAMER, Joe , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L21/4763
CPC分类号： H01L21/30608 , H01L31/03529 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
摘要翻译：本公开涉及用于选择性蚀刻多孔半导体层以从相应的半导体模板分离具有平面或三维特征的薄膜半导体衬底（TFSS）的方法。该方法包括在模板上形成共形牺牲多孔半导体层。接着，在多孔硅层的顶部形成保形薄膜硅衬底。然后选择性地蚀刻中间多孔硅层以分离TFSS和半导体模板。所公开的高级蚀刻化学和蚀刻方法实现选择性蚀刻，对TFSS和模板的损害最小。

10. 发明申请

WO2010091367A1 TRENCH FORMATION METHOD FOR RELEASING A THIN-FILM SUBSTRATE FROM A REUSABLE SEMICONDUCTOR TEMPLATE 审中-公开
标题翻译：用于从可重复使用的半导体模板中释放薄膜基板的成型方法
公开(公告)号：WO2010091367A1
公开(公告)日：2010-08-12
申请号：PCT/US2010/023514
申请日：2010-02-08
申请人： SOLEXEL, INC. , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/035281 , H01L21/76229 , H01L21/76232 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.
摘要翻译：提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。然后从可重复使用的半导体模板中释放薄膜半导体衬底。

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