专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008150284A Nitride semiconductor substrate and manufacturing method thereof 有权
标题翻译：氮化物半导体基板及其制造方法
公开(公告)号：JP2008150284A
公开(公告)日：2008-07-03
申请号：JP2007323451
申请日：2007-12-14
申请人： Siltron Inc , シルトロンインク
发明人： KIM DOO-SOO , LEE HO JUN , KIMU YONJIN , LEE DONG-KUN
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/18
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02381 , H01L21/02428 , H01L21/0254
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate which is prepared by growing a nitride semiconductor film such as gallium nitride (GaN) on a base substrate and a method for manufacturing the same.
SOLUTION: A plurality of trenches on a rear surface of base substrate is formed to absorb or reduce stress applied larger towards a peripheral portion of the base substrate when growing a nitride semiconductor film on the base substrate. In other words, a plurality of trenches on the rear surface of base substrate is formed such that pitches of the trenches formed on the rear surface of base substrate get smaller from a central portion of the base substrate towards the peripheral portion, widths of the trenches get larger from a central portion of the base substrate towards the peripheral portion, or depths of the trenches get larger from a central portion of the base substrate towards the peripheral portion.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供通过在基底基板上生长诸如氮化镓（GaN）的氮化物半导体膜制备的氮化物半导体衬底及其制造方法。解决方案：在基底衬底的后表面上形成多个沟槽，以在基底衬底上生长氮化物半导体膜时吸收或减小施加在基底衬底的周边部分上的应力。换句话说，在基底衬底的后表面上形成多个沟槽，使得形成在基底衬底的后表面上的沟槽的间距从基底衬底的中心部朝向周边部分变窄，沟槽的宽度从基底基板的中心部朝向周边部分变大，或者沟槽的深度从基底基板的中心部朝向周边部分变大。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2009143796A Method for manufacturing gallium nitride single crystalline substrate using self-split 有权
标题翻译：使用自分离法制造氮化镓单晶衬底的方法
公开(公告)号：JP2009143796A
公开(公告)日：2009-07-02
申请号：JP2008311832
申请日：2008-12-08
申请人： Siltron Inc , シルトロンインク
发明人： LEE HO JUN , KIM DOO-SOO , LEE DONG-KUN , KIMU YONJIN
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/18 , H01L21/205
CPC分类号： C30B29/406 , C30B25/18
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystalline substrate which enables easy splitting of a gallium nitride single crystalline layer from a base substrate and production of a large-area substrate. SOLUTION: The method for manufacturing the gallium nitride single crystalline substrate comprises (a) growing a gallium nitride film 12 on a flat base substrate 10 made of a material having a thermal expansion coefficient smaller than that of gallium nitride and cooling the gallium nitride film to convex-bend upwards the base substrate 10 and the gallium nitride film 12, and at the same time creating cracks in the gallium nitride film 12, (b) growing a gallium nitride single crystalline layer 14 on the crack-created gallium nitride film 12 located on the upward convex-bent base substrate 10, and (c) cooling a resultant product having the grown gallium nitride single crystalline layer 14 to warp the upward convex-bent resultant product flat or convex-bent downwards again and at the same time to self-split the base substrate 10 and the gallium nitride single crystalline layer 14 from each other at the crack-created gallium nitride film 12 interposed therebetween. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造氮化镓单晶衬底的方法，其能够容易地从基底衬底分离氮化镓单晶层并生产大面积衬底。解决方案：制造氮化镓单晶衬底的方法包括：（a）在具有比氮化镓的热膨胀系数小的材料制成的平坦的基底衬底10上生长氮化镓膜12，并冷却镓氮化物膜向上弯曲基底衬底10和氮化镓膜12，同时在氮化镓膜12中产生裂纹，（b）在裂纹产生的氮化镓上生长氮化镓单晶层14 薄膜12，其位于向上凸弯的基底基板10上，（c）冷却具有生长的氮化镓单晶层14的所得产品，以使向上凸起的产品平坦或向下弯曲并向下弯曲在裂纹产生的氮化镓膜12之间自由分裂基底衬底10和氮化镓单晶层14的时间。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009071279A Substrate for growing gallium nitride and method for preparing substrate for growing gallium nitride 有权
标题翻译：用于生长氮化镓的基板和用于制备用于生长氮化镓的基板的方法
公开(公告)号：JP2009071279A
公开(公告)日：2009-04-02
申请号：JP2008190935
申请日：2008-07-24
申请人： Siltron Inc , シルトロンインク
发明人： KIM YONG JIN , KIM JI HUN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN
IPC分类号： H01L33/32
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18
摘要： PROBLEM TO BE SOLVED: To provide a substrate for growing gallium nitride and a method for preparing the substrate for growing gallium nitride.
SOLUTION: The method for preparing the substrate for growing gallium nitride includes performing thermal cleaning on a surface of a silicon substrate, forming a Si
3 N
4 micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the gallium nitride substrate and the method for preparing the substrate for growing gallium nitride and reduce process cost.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长氮化镓的衬底以及用于制备用于生长氮化镓的衬底的方法。解决方案：制备用于生长氮化镓的衬底的方法包括在硅衬底的表面上进行热清洗，形成Si <3> S 微掩模以原位方式在硅衬底的表面上，并且使用微掩模中的开口通过外延横向过度生长（ELO）生长氮化镓层。根据该方法，通过改善典型的ELO，可以简化氮化镓衬底和用于制备用于生长氮化镓的衬底的方法，并降低工艺成本。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009102218A Method for manufacturing compound semiconductor substrate 审中-公开
标题翻译：制造化合物半导体基板的方法
公开(公告)号：JP2009102218A
公开(公告)日：2009-05-14
申请号：JP2008190934
申请日：2008-07-24
申请人： Siltron Inc , シルトロンインク
发明人： LEE HO-JUN , KIM YONG JIN , LEE DONG-KUN , KIM DOO-SOO , KIM JI HUN
IPC分类号： C30B29/38 , C23C16/01 , C30B25/18 , H01L21/205
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02639 , H01L21/02642 , H01L21/02664
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor substrate such as gallium nitride having few dislocation, which need not apply a laser lift-off process for separating an epitaxial layer of the compound semiconductor from the substrate.
SOLUTION: This method for manufacturing the compound semiconductor substrate comprises a step of coating the substrate 10 with a plurality of spherical balls 20; a step of forming voids 35 under the spherical balls 20 while growing an epitaxial layer 30 of a compound semiconductor on the substrate 10 coated with the spherical balls 20; a step of cooling the substrate 10 on which the epitaxial layer 30 of the compound semiconductor is grown so that the epitaxial layer 30 of the compound semiconductor is self-split from the substrate 10 along the voids 35. The method demonstrates an effect to reduce dislocation by virtue of spherical ball treatment, also as it utilizes self-splitting, it need not to apply the laser lift-off process for separating the epitaxial layer of the compound semiconductor from the substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造化合物半导体衬底的方法，所述化合物半导体衬底例如几乎没有位错的氮化镓，不需要用于从衬底分离化合物半导体的外延层的激光剥离工艺。解决方案：用于制造化合物半导体衬底的方法包括用多个球形球20涂覆衬底10的步骤; 同时在涂覆有球形球20的基板10上生长化合物半导体的外延层30，同时在球形球20下形成空隙35的步骤; 冷却其上生长化合物半导体的外延层30的衬底10的步骤，使得化合物半导体的外延层30沿着空隙35从衬底10自我分裂。该方法证明了减少位错的效果通过球形球处理，由于利用自分裂，因此不需要施加用于将化合物半导体的外延层与基板分离的激光剥离工艺。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008133180A Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the substrate 有权
标题翻译：在金属层上形成的化合物半导体基板，其制造方法和使用基板的化合物半导体器件
公开(公告)号：JP2008133180A
公开(公告)日：2008-06-12
申请号：JP2007289066
申请日：2007-11-06
申请人： Siltron Inc , シルトロンインク
发明人： KIMU YONJIN , KIM DOO-SOO , LEE HO JUN , LEE DONG-KUN
IPC分类号： C30B29/38 , C23C14/04 , C23C16/34 , C30B25/04 , H01L33/12 , H01L33/32 , H01L33/44
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/20 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide: a method for manufacturing the compound semiconductor substrate, by which a compound semiconductor substrate in which a compound semiconductor layer is grown on a metal layer can be manufactured easily at a low cost; the compound semiconductor substrate manufactured by the same; and an element using the substrate.
SOLUTION: The method for manufacturing the compound semiconductor substrate includes steps of:(a) preparing a plurality of spherical balls; (b) coating the plurality of spherical balls on a substrate; (c) depositing a metal layer on the substrate coated with the spherical balls with a thickness smaller than the diameter of the spherical balls; (d) removing the plurality of spherical balls from the substrate having the metal layer deposited thereon; (e) growing a compound semiconductor layer from a surface of the substrate exposed by removing the plurality of spherical balls; (f) growing the compound semiconductor layer in a lateral direction to form a continuous compound semiconductor layer on the metal layer; and (g) growing the compound semiconductor layer to a target thickness.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供：可以容易地以低成本制造化合物半导体衬底的方法，通过该方法可以容易地制造其中在金属层上生长化合物半导体层的化合物半导体衬底; 由其制造的化合物半导体基板; 以及使用该基板的元件。解决方案：制造化合物半导体衬底的方法包括以下步骤：（a）制备多个球形球; （b）在基板上涂覆多个球形球; （c）在涂覆有球形球的基材上沉积厚度小于球形球直径的金属层; （d）从沉积有金属层的基板上去除多个球形球; （e）通过去除所述多个球形球从所述基板的表面生长化合物半导体层; （f）在横向上生长化合物半导体层，以在金属层上形成连续的化合物半导体层; 和（g）将化合物半导体层生长到目标厚度。版权所有（C）2008，JPO＆INPIT

6. 发明专利

DE602008006159D1 Verfahren zur Herstellung eines einkristallinen Galliumnitridsubstrats unter Verwendung von Selbstspaltung 未知
公开(公告)号：DE602008006159D1
公开(公告)日：2011-05-26
申请号：DE602008006159
申请日：2008-12-03
申请人： SILTRON INC
发明人： LEE HO-JUN , KIM DOO-SOO , LEE DONG-KUN , KIM YONG-JIN
IPC分类号： C30B25/02 , C23C16/01 , C23C16/34 , C30B25/18 , C30B29/38 , C30B29/40 , H01L21/205

7. 发明申请

WO2011065665A3 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：WO2011065665A3
公开(公告)日：2011-09-29
申请号：PCT/KR2010007188
申请日：2010-10-20
申请人： SILTRON INC , KIM YONG-JIN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN , LEE KYE-JIN
发明人： KIM YONG-JIN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN , LEE KYE-JIN
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02458 , H01L21/02658 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.
摘要翻译：公开了一种制造氮化物半导体器件的方法。该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

8. 发明申请

WO2010085042A3 SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件，发光器件及其制造方法
公开(公告)号：WO2010085042A3
公开(公告)日：2010-09-16
申请号：PCT/KR2009007333
申请日：2009-12-09
申请人： SILTRON INC , LEE HO-JUN , LEE DONG-KUN , KIM YONG-JIN , KIM DOO-SOO
发明人： LEE HO-JUN , LEE DONG-KUN , KIM YONG-JIN , KIM DOO-SOO
IPC分类号： H01L33/20 , H01L33/02
CPC分类号： H01L33/007 , H01L33/0075 , H01L33/10 , H01L33/22
摘要： Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.
摘要翻译：公开了一种半导体器件，发光器件及其制造方法。半导体器件包括衬底，设置在衬底上的多个棒，设置在杆之间和衬底上的多个颗粒以及设置在杆上的第一半导体层。半导体器件的制造方法包括：准备基板，在基板上配置多个第一粒子，通过使用第一粒子作为蚀刻掩模，蚀刻基板的一部分来形成多个棒。半导体器件通过上述粒子有效地向上方向反射光，从而提高光效率。通过使用第一颗粒容易地形成棒。

9. 发明公开

EP2389693A4 SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权转让
标题翻译： HELLBLEITERBAUEMENT，LEUCHTBAUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2389693A4
公开(公告)日：2014-03-12
申请号：EP09838929
申请日：2009-12-09
申请人： LG SILTRON INC
发明人： LEE HO-JUN , LEE DONG-KUN , KIM YONG-JIN , KIM DOO-SOO
IPC分类号： H01L33/20 , H01L33/00 , H01L33/02 , H01L33/10 , H01L33/22
CPC分类号： H01L33/007 , H01L33/0075 , H01L33/10 , H01L33/22

10. 发明公开

EP2507818A4 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： PROCESS FOR一种氮化物半导体器件
公开(公告)号：EP2507818A4
公开(公告)日：2013-09-18
申请号：EP10833477
申请日：2010-10-20
申请人： LG SILTRON INC
发明人： KIM YONG-JIN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN , LEE KYE-JIN
IPC分类号： H01L21/20 , H01L21/306 , H01L33/00 , H01L33/02
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02458 , H01L21/02658 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式