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1. 发明申请

WO2016044213A1 SCHOTTKY CLAMPED RADIO FREQUENCY SWITCH 审中-公开
标题翻译： SCHOTTKY钳位无线电频率开关
公开(公告)号：WO2016044213A1
公开(公告)日：2016-03-24
申请号：PCT/US2015/050096
申请日：2015-09-15
申请人： SILANNA SEMICONDUCTOR U.S.A., INC.
发明人： NYGAARD, Paul A.
IPC分类号： H01L29/872 , H01L29/02
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L27/0727 , H01L29/47 , H01L29/665 , H01L29/7833 , H01L29/7839 , H01L29/78615
摘要： Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating.
摘要翻译：提供了涉及具有夹持体的射频（RF）开关的各种方法和装置。具有夹持体的示例性RF开关包括分离源极和漏极的沟道。 RF开关还包括跨越沟道的夹持区域，延伸到源极和漏极中，并且具有比源极和漏极都更低的掺杂剂浓度。 RF开关还包括一对匹配的硅化物区域，形成在通道的任一侧并与夹持区域接触。夹持区域形成一对具有一对匹配硅化物区域的肖特基二极管屏障。 RF开关可以以多种工作模式工作。这对肖特基二极管屏障为夹紧体内的累积电荷提供恒定的吸收，独立于RF开关工作的工作模式。

2. 发明授权

EP2454752B1 SEMICONDUCTOR-ON-INSULATOR WITH BACKSIDE HEAT DISSIPATION 有权转让
标题翻译：背部散热的SOI
公开(公告)号：EP2454752B1
公开(公告)日：2015-09-09
申请号：EP10734619.9
申请日：2010-07-14
申请人： Silanna Semiconductor U.S.A., Inc.
发明人： NYGAARD, Paul A. , MOLIN, Stuart B. , STUBER, Michael A.
IPC分类号： H01L21/78 , H01L23/36 , H01L21/84 , H01L27/12 , H01L21/336 , H01L29/786 , H01L23/367
CPC分类号： H01L27/1207 , H01L21/76256 , H01L21/78 , H01L21/84 , H01L23/36 , H01L23/3677 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/80 , H01L24/83 , H01L24/94 , H01L27/1203 , H01L29/78603 , H01L29/78606 , H01L2221/6834 , H01L2221/6835 , H01L2221/68377 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/03845 , H01L2224/0401 , H01L2224/05572 , H01L2224/08225 , H01L2224/11002 , H01L2224/13022 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/16227 , H01L2224/29186 , H01L2224/29188 , H01L2224/2919 , H01L2224/32225 , H01L2224/48 , H01L2224/80006 , H01L2224/8022 , H01L2224/80801 , H01L2224/80894 , H01L2224/83005 , H01L2224/8322 , H01L2224/83801 , H01L2224/8385 , H01L2224/9202 , H01L2224/9212 , H01L2224/92142 , H01L2224/94 , H01L2924/00014 , H01L2924/1305 , H01L2924/14 , H01L2924/3011 , H01L2924/3511 , H01L2924/014 , H01L2224/11 , H01L2924/00 , H01L2924/053 , H01L2924/00012 , H01L2224/83 , H01L2224/80 , H01L2224/03 , H01L2224/45099
摘要： Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating.

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