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1. 发明申请

WO2006013867A1 TRANSPARENT ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：透明电极用于半导体发光器件
公开(公告)号：WO2006013867A1
公开(公告)日：2006-02-09
申请号：PCT/JP2005/014137
申请日：2005-07-27
申请人： SHOWA DENKO K.K. , EITOH, Nobuo , MURAKI, Noritaka , MIKI, Hisayuki , WATANABE, Munetaka
发明人： EITOH, Nobuo , MURAKI, Noritaka , MIKI, Hisayuki , WATANABE, Munetaka
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/42 , H01L33/32
摘要： A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.
摘要翻译：用于氮化镓基化合物半导体发光器件的透明电极包括p型半导体层（5），在p型半导体层上通过欧姆接触形成的接触金属层（1），电流扩散层 12），形成在所述接触金属层上，并且在所述透明电极的平面上的电阻率比接触金属低，并且形成在所述电流扩散层上的接合焊盘（13）。透明电极在扩大p型半导体层的发光表面方面具有优点，降低了正向的工作电压，能够提供优异的粘合强度。

2. 发明申请

WO2005074046A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005074046A1
公开(公告)日：2005-08-11
申请号：PCT/JP2005/001645
申请日：2005-01-28
申请人： SHOWA DENKO K.K , MURAKI, Noritaka , WATANABE, Munetaka , MIKI, Hisayuki , OHNO, Yasushi
发明人： MURAKI, Noritaka , WATANABE, Munetaka , MIKI, Hisayuki , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emitting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.
摘要翻译：氮化镓系化合物半导体发光元件包括晶体基板（10），由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层形成的量子阱结构的发光层（15）所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17）欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。欧姆电极相对于从发光层发射的光呈现透光性。阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

3. 发明申请

WO2006011672A1 POSITIVE ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：用于半导体发光器件的正极
公开(公告)号：WO2006011672A1
公开(公告)日：2006-02-02
申请号：PCT/JP2005/014265
申请日：2005-07-28
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki , MURAKI, Noritaka , WATANABE, Munetaka
发明人： MIKI, Hisayuki , MURAKI, Noritaka , WATANABE, Munetaka
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079
摘要： An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.
摘要翻译：本发明的目的是提供一种用于面朝上型芯片的透明正电极，即使使用低驱动电压也能发出强光。本发明的半导体发光装置用正极包括形成在半导体层上的透明电极和形成在透明电极上的焊盘电极，其中，焊盘电极具有与至少透明电极接触的反射层。

4. 发明申请

WO2007029841A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2007029841A1
公开(公告)日：2007-03-15
申请号：PCT/JP2006/317930
申请日：2006-09-05
申请人： SHOWA DENKO K.K. , SHINOHARA, Hironao , MIKI, Hisayuki , MURAKI, Noritaka
发明人： SHINOHARA, Hironao , MIKI, Hisayuki , MURAKI, Noritaka
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

5. 发明申请

WO2006038713A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的生产方法
公开(公告)号：WO2006038713A1
公开(公告)日：2006-04-13
申请号：PCT/JP2005/018731
申请日：2005-10-05
申请人： SHOWA DENKO K.K. , YAKUSHIJI, Kenji , KUSUNOKI, Katsuki , MIKI, Hisayuki
发明人： YAKUSHIJI, Kenji , KUSUNOKI, Katsuki , MIKI, Hisayuki
IPC分类号： H01L21/301 , H01L33/00 , H01L21/02
CPC分类号： H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/78 , H01L33/0095 , H01L33/20
摘要： An object of the present invention is to provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area efficiency and at a low cost. The inventive method of producing a Group III nitride semiconductor device having a chip shape which is a pentagonal or more highly polygonal shape comprises a first step of epitaxially growing a Group III nitride semiconductor on a substrate to form a semiconductor wafer; a second step of irradiating said semiconductor wafer with a laser beam to form separation grooves; a third step of grinding and/or polishing the main surface side differently from the epitaxially grown main surface of the substrate; and a fourth step of division into individual chips by applying stress to said separation grooves.
摘要翻译：本发明的目的是提供一种具有五边形或更高多边形的芯片形式的维持良好的面积效率和低成本的III族氮化物半导体器件的方法。制造具有五边形或更高多边形形状的芯片形状的III族氮化物半导体器件的本发明的方法包括在衬底上外延生长III族氮化物半导体以形成半导体晶片的第一步骤; 用激光束照射所述半导体晶片以形成分离槽的第二步骤; 与衬底的外延生长的主表面不同的研磨和/或抛光主表面侧的第三步骤; 以及通过向所述分离槽施加应力的第四步骤，分割成单个碎屑。

6. 发明申请

WO2006030950A1 N-TYPE GROUP III NITRIDE SEMICONDUCTOR STACKED LAYER STRUCTURE 审中-公开
标题翻译： N型III类氮化物半导体堆叠层结构
公开(公告)号：WO2006030950A1
公开(公告)日：2006-03-23
申请号：PCT/JP2005/017243
申请日：2005-09-13
申请人： SHOWA DENKO K.K. , TAKEDA, Hitoshi , MIKI, Hisayuki
发明人： TAKEDA, Hitoshi , MIKI, Hisayuki
IPC分类号： H01L33/00
CPC分类号： H01L29/155 , B82Y20/00 , H01L24/73 , H01L29/2003 , H01L33/02 , H01L33/025 , H01L33/32 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01S5/34333 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An object of the present invention provides an n-type Group III nitride semiconductor stacked layer structure of a low resistance having excellent flatness generating few cracks and pits in the uppermost surface. The inventive n-type Group III nitride semiconductor stacked layer structure comprises a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.
摘要翻译：本发明的目的是提供一种低电阻的n型III族氮化物半导体叠层结构，其在最上表面产生很少的裂纹和凹坑。本发明的n型III族氮化物半导体堆叠层结构包括第一n型层，其包括含有高浓度的n型杂质原子的层和含有低浓度的n型杂质原子的层，第二n型型层，其平均浓度小于第一n型层的n型杂质原子，与第一n型层中低浓度的含有n型杂质原子的层相邻的第二n型层。

7. 发明申请

WO2005117151A1 POSITIVE ELECTRODE STRUCTURE AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：正极电极结构和基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005117151A1
公开(公告)日：2005-12-08
申请号：PCT/JP2005/009715
申请日：2005-05-20
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki
发明人： MIKI, Hisayuki
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/40
摘要： This positive electrode structure is a transparent positive electrode for a gallium nitride-based compound semiconductor light emitting device including In, the positive electrode structure includes two layers which are a contact metal layer including a thin film of at least one metal selected from the platinum group and a current diffusion layer including a thin film of metals or alloys other than the metal included in the contact metal layer and a bonding pad.
摘要翻译：这种正极结构是包括In的氮化镓基化合物半导体发光器件的透明正电极，正极结构包括两层，它们是包括选自铂族中的至少一种金属的薄膜的接触金属层以及电流扩散层，其包含除了接触金属层中包含的金属以外的金属或合金的薄膜和接合焊盘。

8. 发明申请

WO2005106982A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2005106982A1
公开(公告)日：2005-11-10
申请号：PCT/JP2005/008552
申请日：2005-04-28
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki , BANDO, Akira , UDAGAWA, Takashi
发明人： MIKI, Hisayuki , BANDO, Akira , UDAGAWA, Takashi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/325
摘要： A Group III nitride semiconductor light-emitting device includes a crystal substrate, an n-type and a p-type semiconductor of Al X Ga Y In Z N 1 - a M a , wherein 0 ≤ X ≤ 1, 0 ≤ Y ≤ 1, 0 ≤ Z ≤ 1, X + Y + Z = 1, M denotes a Group V element other than N, and 0 ≤ a
摘要翻译： III族氮化物半导体发光器件包括晶体衬底，AlXGaYInZN1-aMa的n型和p型半导体，其中0 <= X <=1,0,0≤Y≤1,0

9. 发明申请

WO2007034971A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2007034971A1
公开(公告)日：2007-03-29
申请号：PCT/JP2006/319089
申请日：2006-09-20
申请人： SHOWA DENKO K.K. , ORIJI, Gaku , KAMEI, Koji , MIKI, Hisayuki , MATSUSE, Akihiro
发明人： ORIJI, Gaku , KAMEI, Koji , MIKI, Hisayuki , MATSUSE, Akihiro
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/0075 , H01L33/025 , H01L33/24 , H01L33/38
摘要： The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.
摘要翻译：本发明旨在提高III族氮化物半导体发光器件的光提取效率。本发明的III族氮化物半导体发光器件包括衬底; 以及层叠在所述基板上的包含发光层的III族氮化物半导体层，其中，所述III族氮化物半导体层的侧面相对于所述基板的主面的法线倾斜。

10. 发明申请

WO2007029859A1 ELECTRODE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：用于半导体发光器件的电极
公开(公告)号：WO2007029859A1
公开(公告)日：2007-03-15
申请号：PCT/JP2006/318088
申请日：2006-09-06
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki
发明人： MIKI, Hisayuki
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L33/42
摘要： An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
摘要翻译：本发明的目的是提供一种能够以低驱动电压产生强大的发光而不降低结晶度的电极。用于半导体发光器件的电极具有在发光器件的同一侧上具有n型或p型电极和相对的p型或n型电极的结构。两个电极都包括接合焊盘和透明导电层。优选地，发光器件是GaN基半导体发光器件。透明导电层的材料是诸如ITO的金属氧化物或诸如Al，Ni的金属。

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