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1. 发明申请

WO2007058331A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2007058331A1
公开(公告)日：2007-05-24
申请号：PCT/JP2006/323052
申请日：2006-11-14
申请人： SHOWA DENKO K.K. , KAMEI, Koji
发明人： KAMEI, Koji
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/40
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.
摘要翻译：本发明的目的是提供一种具有低驱动电压和高发光输出的氮化镓基化合物半导体发光器件，其具有包括与p型直接接触的透明导电层的正极半导体层。本发明的氮化镓系化合物半导体发光元件包括在基板上依次形成的n型半导体层，发光层和p型半导体层，其中，各层包含氮化镓系化合物半导体发光元件，所述发光装置的负极和正极分别设置在所述n型半导体层和所述p型半导体层上，所述正极至少部分地由透明导电膜形成透明导电膜至少部分地与p型半导体层接触，在透明导电膜的半导体侧表面上存在含有III族金属成分的半导体金属混合层，半导体金属混合层为0.1〜10nm。

2. 发明申请

WO2007004701A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIHGT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2007004701A1
公开(公告)日：2007-01-11
申请号：PCT/JP2006/313515
申请日：2006-06-30
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki , SHINOHARA, Hironao , KAMEI, Koji
发明人： MIKI, Hisayuki , SHINOHARA, Hironao , KAMEI, Koji
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2933/0083
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.
摘要翻译：本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件，其具有优异的光提取效率。本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体层结构，设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

3. 发明申请

WO2006001462A1 REFLECTIVE POSITIVE ELECTRODE AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：使用其的反射正电极和基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2006001462A1
公开(公告)日：2006-01-05
申请号：PCT/JP2005/011870
申请日：2005-06-22
申请人： SHOWA DENKO K.K. , KAMEI, Koji
发明人： KAMEI, Koji
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L21/28575 , H01L33/32
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device which has a highly reflective positive electrode that has high reverse voltage and excellent reliability with low contact resistance to the p-type gallium nitride-based compound semiconductor layer. The inventive reflective positive electrode for a semiconductor light-emitting device comprises a contact metal layer adjoining a p-type semiconductor layer, and a reflective layer on the contact metal layer, wherein the contact metal layer is formed of a platinum group metal or an alloy containing a platinum group metal, and the reflective layer is formed of at least one metal selected from the group consisting of Ag, Al, and alloys containing at least one of Ag and Al.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件具有高反射性的正极，具有高的反向电压和优异的可靠性以及对p型氮化镓系化合物的低接触电阻半导体层。本发明的用于半导体发光器件的反射正极包括邻接p型半导体层的接触金属层和接触金属层上的反射层，其中接触金属层由铂族金属或合金含有铂族金属，反射层由选自Ag，Al的至少一种金属和含有Ag和Al中的至少一种的合金形成。

4. 发明申请

WO1998014962A1 COMPOUND MAGNETIC MATERIAL AND ELECTROMAGNETIC INTERFERENCE SUPPRESSOR 审中-公开
标题翻译：化学磁性材料和电磁干扰抑制剂
公开(公告)号：WO1998014962A1
公开(公告)日：1998-04-09
申请号：PCT/JP1997003396
申请日：1997-09-24
申请人： TOKIN CORPORATION , YOSHIDA, Shigeyoshi , SATO, Mitsuharu , KAMEI, Koji
发明人： TOKIN CORPORATION
IPC分类号： H01F01/00
CPC分类号： H05K9/0083 , H01F1/0027 , H01F1/26 , H01F1/37 , H01Q17/00 , H01Q17/002 , H01Q17/004 , Y10T307/653
摘要： A thin electromagnetic interference depressor effective in suppressing electromagnetic interferences of microwave band. As an electromagnetic interference suppressing material, there is provided a compound magnetic material which is prepared by binding powder of a semi-rigid magnetic material with an organic binder and has a high magnetic loss in the microwave band. The semi-rigid magnetic material can be exemplified by a metallic magnetic material such as an alloy of Fe-Co-Mo, Co-Fe-Nb or Fe-Co-V or by an oxide magnetic material such as gamma -Fe2O3 or Ba ferrite replaced. On the other hand, the organic binder can be exemplified by a polyurethane resin.
摘要翻译：有效抑制微波频段电磁干扰的薄型电磁干扰抑制器。作为电磁干扰抑制材料，提供了一种复合磁性材料，其通过将半刚性磁性材料的粉末与有机粘结剂结合并在微波带中具有高磁损而制备。半刚性磁性材料可以由Fe-Co-Mo，Co-Fe-Nb或Fe-Co-V的合金等金属磁性材料或γ-Fe 2 O 3或Ba铁氧体等氧化物磁性材料更换。另一方面，有机粘合剂可以举例为聚氨酯树脂。

5. 发明申请

WO2005059982A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND NEGATIVE ELECTRODE THEREOF 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件及其负极
公开(公告)号：WO2005059982A1
公开(公告)日：2005-06-30
申请号：PCT/JP2004/019284
申请日：2004-12-16
申请人： SHOWA DENKO K.K. , KAMEI, Koji
发明人： KAMEI, Koji
IPC分类号： H01L21/28
CPC分类号： H01L21/28575 , H01L33/32 , H01L33/40
摘要： An object of the present invention is to provide a negative electrode which attains excellent Ohmic contact with an n-type gallium nitride-based compound semiconductor layer, which resists deterioration in characteristics which would be caused by heating, and which can be produced at high efficiency. Another object of the invention is to provide a gallium nitride-based compound semiconductor light-emitting device having the negative electrode. The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode comprises a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of a Cr-Al alloy.
摘要翻译：本发明的目的是提供一种与n型氮化镓系化合物半导体层具有优异的欧姆接触的负极，其耐受由加热引起的特性劣化，并且能够以高效率。本发明的另一个目的是提供一种具有负极的氮化镓基化合物半导体发光器件。本发明的氮化镓系化合物半导体发光元件包括氮化镓系化合物半导体的n型半导体层，氮化镓类化合物半导体的发光层和p型半导体层氮化镓基化合物半导体依次形成在基板上，分别具有设置在n型半导体层和p型半导体层上的负极和正极; 其中所述负极包括接合焊盘层和与所述n型半导体层接触的接触金属层，并且所述接触金属层由Cr-Al合金构成。

6. 发明申请

WO1998008234A1 EMI PREVENTIVE PART AND ACTIVE DEVICE WITH THE SAME 审中-公开
标题翻译： EMI预防部分及其相关的主动设备
公开(公告)号：WO1998008234A1
公开(公告)日：1998-02-26
申请号：PCT/JP1997002940
申请日：1997-08-25
申请人： TOKIN CORPORATION , SATO, Mitsuharu , KAMEI, Koji , YOSHIDA, Shigeyoshi
发明人： TOKIN CORPORATION
IPC分类号： H01F01/24
CPC分类号： H01L23/552 , H01F1/24 , H01F1/26 , H01F1/33 , H01L2924/0002 , H01Q1/526 , H01Q17/00 , Y10T428/24372 , Y10T428/24413 , H01L2924/00
摘要： An EMI preventive part which has a sufficiently large shielding effect against the transmission of electromagnetic waves radiated outside from an active device without deteriorating the circuit function of the device and prevents malfunctions, etc., caused by the mutual interference between peripheral parts or electromagnetic induction in signal lines. The part is composed of a composite magnetic material containing the powder of a soft magnetic material coated with oxide films and an organic binder. Because of the complex permeability, the part dissipates unnecessary high-frequency electromagnetic radiation as heat.
摘要翻译：一种EMI防止部件，其对从有源器件向外辐射的电磁波的透射具有足够大的屏蔽效果，而不会降低器件的电路功能，并防止由周边部件之间的相互干扰或电磁感应引起的故障等信号线。该部分由包含涂覆有氧化物膜和有机粘合剂的软磁材料的粉末的复合磁性材料组成。由于复杂的磁导率，该部分散发不必要的高频电磁辐射作为热量。

7. 发明申请

WO2007034971A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2007034971A1
公开(公告)日：2007-03-29
申请号：PCT/JP2006/319089
申请日：2006-09-20
申请人： SHOWA DENKO K.K. , ORIJI, Gaku , KAMEI, Koji , MIKI, Hisayuki , MATSUSE, Akihiro
发明人： ORIJI, Gaku , KAMEI, Koji , MIKI, Hisayuki , MATSUSE, Akihiro
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/0075 , H01L33/025 , H01L33/24 , H01L33/38
摘要： The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.
摘要翻译：本发明旨在提高III族氮化物半导体发光器件的光提取效率。本发明的III族氮化物半导体发光器件包括衬底; 以及层叠在所述基板上的包含发光层的III族氮化物半导体层，其中，所述III族氮化物半导体层的侧面相对于所述基板的主面的法线倾斜。

8. 发明申请

WO2005081328A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005081328A1
公开(公告)日：2005-09-01
申请号：PCT/JP2005/003255
申请日：2005-02-22
申请人： SHOWA DENKO K.K. , KAMEI, Koji
发明人： KAMEI, Koji
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having a positive electrode that exhibits low contact resistance with a p-type gallium nitride compound semiconductor layer and that can be fabricated with high productivity. The inventive gallium nitride compound semiconductor light-emitting device includes a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a negative electrode provided in contact with the n-type semiconductor layer, and a positive electrode provided in contact with the p-type semiconductor layer, the layers being successively provided atop the substrate in this order and being composed of a gallium nitride compound semiconductor, wherein the positive electrode includes at least a contact metal layer which is in contact with the p-type semiconductor layer, the contact metal layer comprises at least one metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru, Re, and Os, or an alloy containing said at least one metal, and the surface portion of the p-type semiconductor layer on the positive electrode side includes a positive-electrode-metal-containing layer that contains at least one metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru, Re, and Os.
摘要翻译：本发明的目的是提供一种具有与p型氮化镓化合物半导体层具有低接触电阻并且可以以高生产率制造的正电极的氮化镓化合物半导体发光器件。本发明的氮化镓化合物半导体发光器件包括衬底，n型半导体层，发光层，p型半导体层，与n型半导体层接触的负极，以及与p型半导体层接触地设置的正极，该层依次依次设置在基板的上方，并由氮化镓系化合物半导体构成，其中，所述正极至少包含接触金属层 p型半导体层，接触金属层包括选自Pt，Ir，Rh，Pd，Ru，Re和Os中的至少一种金属，或包含所述至少一种金属的合金，以及表面正极侧的p型半导体层的一部分包含含有选自Pt，Ir，Rh中的至少一种金属的正极 - 金属含有层，Pd，Ru，Re和Os。

9. 发明申请

WO1998009189A1 OPTICAL FIBER CABLE 审中-公开
标题翻译：光纤电缆
公开(公告)号：WO1998009189A1
公开(公告)日：1998-03-05
申请号：PCT/JP1997003003
申请日：1997-08-28
申请人： TOKIN CORPORATION , KAMEI, Koji , YOSHIDA, Shigeyoshi
发明人： TOKIN CORPORATION
IPC分类号： G02B06/44
CPC分类号： G02B6/4422 , G02B6/443
摘要： In order to effectively minimize the unnecessary radiation noise propagated along or produced from a reinforcing wire in an optical fiber cable without providing an electromagnetic shielding member in addition to the optical fiber cable, a buffering layer covering the reinforcing wire, which is a tension member constituting the optical fiber cable, and an outer layer of a LAP sheath are formed of a composite magnetic material comprising powder of a soft magnetic material and an organic binder. The powder of the magnetic material preferably comprises substantially flat particles.
摘要翻译：为了有效地最小化除了光纤电缆之外，在不提供电磁屏蔽构件的情况下，在光纤电缆中沿着或由增强线产生的不必要的辐射噪声最小化，覆盖作为构成的张紧构件的增强线的缓冲层光纤电缆和LAP护套的外层由包含软磁性材料和有机粘合剂的粉末的复合磁性材料形成。磁性材料的粉末优选包含基本平坦的颗粒。

10. 发明申请

WO2007015537A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2007015537A1
公开(公告)日：2007-02-08
申请号：PCT/JP2006/315362
申请日：2006-07-27
申请人： SHOWA DENKO K.K. , KAMEI, Koji
发明人： KAMEI, Koji
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/405 , H01L2933/0016
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a positive electrode which comprises a first electrode and an over-coating layer covering the side surfaces and upper surface of the first electrode provided on a p-type semiconductor layer, the over-coating layer tending not to be exfoliated from the p-type semiconductor layer. The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer of gallium nitride-based compound semiconductors which are formed in this order on a substrate, the negative electrode and the positive electrode being provided in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode comprises at least a first electrode and an over-coating layer covering the side surfaces and upper surface of the first electrode, and the area where the over-coating layer comes into contact with the p-type semiconductor layer is greater at the corner portions of the positive electrode than at the side portions thereof, per unit length of the outer edge of the first electrode.
摘要翻译：本发明的目的在于提供一种具有正极的氮化镓系化合物半导体发光元件，该正极具有覆盖设置在p上的第一电极的侧面和上表面的第一电极和覆盖层型半导体层，该覆盖层倾向于不从p型半导体层剥离。本发明的氮化镓系化合物半导体发光元件包括在基板上依次形成的氮化镓系化合物半导体的n型半导体层，发光层和p型半导体层，负极和正极分别设置为与n型半导体层和p型半导体层接触，其中正电极至少包括第一电极和覆盖层，其覆盖侧表面和上表面，并且所述外涂层与所述p型半导体层接触的区域在所述正极的所述角部比在所述第一电极的所述侧部的每个所述边缘的每个单位长度处更大第一电极。

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