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1. 发明专利

CA2798926C ETCHING SOLUTION AND METHOD FOR PROCESSING SURFACE OF SILICON SUBSTRATE 未知
公开(公告)号：CA2798926C
公开(公告)日：2014-09-02
申请号：CA2798926
申请日：2011-05-17
申请人： SHINRYO CORP
发明人： SAWAI TAKESHI , ISHIKAWA MAKOTO , SHIRAHAMA TOSHIKI , OTSUBO HIROSHI
IPC分类号： H01L31/18
摘要： Disclosed is an etching solution which enables the formation of a silicon substrate having fine pyramid-like depressions and protrusions (a textured structure) in a steady manner without requiring the use of any conventional etching inhibitors such as isopropyl alcohol. Specifically disclosed is an etching solution in which a silicon substrate is to be immersed to form pyramid-like depressions and protrusions on the surface of the substrate, and which is characterized by comprising at least one etching inhibitor component selected from compounds (A) each represented by general formula (1) and alkali salts thereof and an alkali hydroxide (B) at a concentration of 0.1 to 30 wt% inclusive. In the general formula (I), R represents one of an alkyl group, an alkenyl group and an alkynyl group each having 4 to 15 inclusive of carbon atoms; and X represents a sulfonic acid group. By using the etching solution, it becomes possible to form a fine textured structure on the surface of a silicon substrate.

2. 发明专利

CA2798926A1 ETCHING SOLUTION AND METHOD FOR PROCESSING SURFACE OF SILICON SUBSTRATE 未知
公开(公告)号：CA2798926A1
公开(公告)日：2011-11-24
申请号：CA2798926
申请日：2011-05-17
申请人： SHINRYO CORP
发明人： SAWAI TAKESHI , ISHIKAWA MAKOTO , SHIRAHAMA TOSHIKI , OTSUBO HIROSHI
IPC分类号： H01L21/306 , H01L21/308 , H01L31/04
摘要： Disclosed is an etching solution which enables the formation of a silicon substrate having fine pyramid-like depressions and protrusions (a textured structure) in a steady manner without requiring the use of any conventional etching inhibitor such as isopropyl alcohol. Specifically disclosed is an etching solution in which a silicon substrate is to be immersed to form pyramid-like depressions and protrusions on the surface of the substrate, and which is characterized by comprising at least one component selected from compounds (A) each represented by general formula (1) and alkali salts thereof and an alkali hydroxide (B) at a concentration of 0.1 to 30 wt% inclusive. (In the formula, R represents one of an alkyl group, an alkenyl group and an alkynyl group each having 4 to 15 inclusive of carbon atoms; and X represents a sulfonic acid group.) By using the etching solution, it becomes possible to form a fine textured structure on the surface of a silicon substrate.

3. 发明专利

JP2013110327A Method for manufacturing silicon substrate for solar cell 审中-公开
标题翻译：制造太阳能电池用硅基板的方法
公开(公告)号：JP2013110327A
公开(公告)日：2013-06-06
申请号：JP2011255543
申请日：2011-11-22
申请人： Shinryo Corp , 株式会社新菱
发明人： SHIRAHAMA TOSHIKI , MATSUO SHIGEKI , OTSUBO HIROSHI , SAWAI TAKESHI
IPC分类号： H01L31/04 , H01L21/306
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon substrate improved so that it can uniformly form an uneven structure when processing the silicon substrate with an alkaline etching liquid containing a non-alcohol-based etching inhibitor.SOLUTION: A method for manufacturing a silicon substrate for solar cell having a pyramid-like uneven structure on a surface of the substrate by using an as-sliced silicon substrate, includes the steps of: processing the silicon substrate with an alkaline etching liquid containing a non-alcohol-based etching inhibitor and forming a pyramid-like uneven structure on a surface of the silicon substrate (texture step); and removing the deposit derived from a slice step by processing the silicon substrate with a cleaning liquid (step provided in a prior stage of the texture step). In the step of removing the deposit derived from the slice step, the cleaning liquid is a foaming cleaning liquid which uses a mixture of hydrogen peroxide and alkali or a reactant of hydrogen peroxide and carbonate in an aqueous medium.
摘要翻译：要解决的问题：提供一种改进的硅基板的制造方法，以便在使用含有非醇系蚀刻抑制剂的碱性蚀刻液处理硅基板时能够均匀地形成不均匀结构。解决方案：通过使用片状硅衬底在衬底的表面上制造具有棱锥状不均匀结构的太阳能电池用硅衬底的方法包括以下步骤：用碱蚀刻处理硅衬底含有非醇系蚀刻抑制剂的液体，在硅基板的表面形成棱锥状的不均匀结构（织构工序）; 以及通过用清洗液（在纹理步骤的前一阶段提供的步骤）处理硅衬底，去除由切片步骤得到的沉积物。在从切片步骤中除去沉积物的步骤中，清洗液体是在水性介质中使用过氧化氢和碱的混合物或过氧化氢和碳酸酯的反应物的发泡清洗液。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2014165385A Silicon substrate having texture structure, and method for manufacturing the same 审中-公开
标题翻译：具有纹理结构的硅衬底及其制造方法
公开(公告)号：JP2014165385A
公开(公告)日：2014-09-08
申请号：JP2013036097
申请日：2013-02-26
申请人： Shinryo Corp , 株式会社新菱
发明人： SHIRAHAMA TOSHIKI , SAWAI TAKESHI , NISHIO DAISUKE , FUJIWARA YASUSHI
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a silicon substrate having a texture structure which is suitable for efficient absorption of solar light, and can realize the rise in the efficiency of a solar battery arranged by use of the silicon substrate.SOLUTION: A silicon substrate comprises a surface structure (texture structure) having fine pyramid-like protruding structures formed on a whole surface thereof. Pyramids forming the texture structure have an average base length in a range of from 0.5 to less than 2.0 μm. The substrate surface has a light reflection coefficient of 12.0% or smaller to light in any wavelength ranges between 600 and 1000 nm inclusive.
摘要翻译：要解决的问题：提供具有适合于有效吸收太阳光的纹理结构的硅衬底，并且可以实现使用硅衬底布置的太阳能电池的效率的提高。解决方案：硅衬底包括在其整个表面上形成有具有棱锥状突出结构的细微结构的表面结构（纹理结构）。形成纹理结构的金字塔的平均碱基长度在0.5至小于2.0μm的范围内。衬底表面的光反射系数在600和1000nm之间的任何波长范围内的光的反射系数都为12.0％或更小。

5. 发明专利

JP2013089629A Etchant and method for processing surface of silicon substrate 审中-公开
标题翻译：用于处理硅基材表面的蚀刻和方法
公开(公告)号：JP2013089629A
公开(公告)日：2013-05-13
申请号：JP2011225864
申请日：2011-10-13
申请人： Shinryo Corp , 株式会社新菱
发明人： SHIRAHAMA TOSHIKI , MORISHITA YASUKO , SAWAI TAKESHI
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide an etchant capable of forming a silicon substrate having fine pyramidal protrusions and recesses (texture structure) stably, without using a conventional etching retarder such as isopropyl alcohol.SOLUTION: There is provided an etchant in which a silicon substrate is immersed in order to form pyramidal protrusions and recesses on the surface of the substrate. The etchant contains a compound (A) represented by following general formula (1) and alkali hydroxide (B). (In the formula (1), X represents a sulfonic acid group or an alkali salt thereof, Rand Rmay be the same or different and each represent one kind selected from a group of hydrogen atom, alkyl group, alkenyl group, and alkynyl group (each having 1 or 2 carbon atoms) provided that the total number of carbon atoms of Rand Ris 0 to 2).
摘要翻译：要解决的问题：提供能够稳定地形成具有金字塔形突起和凹陷（纹理结构）的硅基板的蚀刻剂，而不使用常规的防蚀剂如异丙醇。解决方案：提供了一种蚀刻剂，其中浸渍硅衬底以在衬底的表面上形成锥体突起和凹陷。蚀刻剂含有由以下通式（1）表示的化合物（A）和碱金属氢氧化物（B）。（式（1）中，X表示磺酸基或其碱金属盐，R 1 和R 2 相同或不同，并且各自表示选自氢原子，烷基，烯基和炔基（每个具有1或2个碳原子）的一种，条件是R 1 和R 2 为0到2）。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010141139A Etchant for silicon substrate, and surface processing method for silicon substrate 有权
标题翻译：硅衬底蚀刻剂和硅衬底的表面处理方法
公开(公告)号：JP2010141139A
公开(公告)日：2010-06-24
申请号：JP2008316195
申请日：2008-12-11
申请人： Shinryo Corp , 株式会社新菱
发明人： SAWAI TAKESHI , SHIRAHAMA TOSHIKI , IWAKUMA FUJIKO
IPC分类号： H01L21/308 , H01L21/306 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide an etchant with which an etching aqueous solution is prevented from changing in composition and a low reflectivity is effectively obtained inexpensively when pyramidal unevenness is formed on the surface of a silicon substrate for a solar cell by a wet etching process.
SOLUTION: The present invention relates to the etchant in which the silicon substrate is dipped to form the pyramidal unevenness uniformly on the substrate surface, the etchant comprising a solution containing: a compound (A) and a having one or more hydroxyl group in one molecule, and having a solubility parameter of 8.0 to 13.0 [cal/cm
3 ]
0.5 and a boiling point of ≥95°C under atmospheric pressure; and alkali hydroxide (B).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种蚀刻剂，其被防止蚀刻水溶液的组成变化，并且当在太阳能电池用硅基板的表面上形成金字塔状的不均匀时，可以廉价地有效地获得低反射率湿蚀刻工艺。解决方案：本发明涉及其中硅衬底浸渍以在衬底表面上均匀地形成锥体不匀的蚀刻剂，所述蚀刻剂包括含有化合物（A）和具有一个或多个羟基的溶液在大气压下溶解度参数为8.0〜13.0 [cal / cm 3] SP> 0.5℃，沸点≥95℃，和碱金属氢氧化物（B）。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2012004528A Etchant, and surface processing method of silicon substrate 有权
标题翻译：硅衬底的表面处理方法和表面处理方法
公开(公告)号：JP2012004528A
公开(公告)日：2012-01-05
申请号：JP2010239923
申请日：2010-10-26
申请人： Shinryo Corp , 株式会社新菱
发明人： SAWAI TAKESHI , ISHIKAWA MAKOTO , SHIRAHAMA TOSHIKI , OTSUBO HIROSHI
IPC分类号： H01L21/306 , H01L21/308 , H01L31/04
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide an etchant capable of stably forming a silicon substrate having fine and pyramidal projecting and recessed parts (texture structure) without using a conventional etching inhibitor such as isopropyl alcohol.SOLUTION: The silicon substrate is dipped in this etchant to form the pyramidal projecting and recessed parts on the surface of the substrate, and the etchant contains a compound (A) expressed by the following general formula (1) or one or more kind selected from the alkali salt thereof, and alkali hydroxide (B) having concentration of not less than 0.1 wt.% and not more than 30 wt.%. R-X(1)(in the formula, R represents either one of 4C-15C alkyl group, alkenyl group, and alkynyl group, X represents a sulfonate group.) A fine texture structure can be formed on the surface of the silicon substrate by using the etchant.
摘要翻译：要解决的问题：提供能够稳定地形成具有精细和金字塔形的突出和凹陷部分（纹理结构）的硅基板的蚀刻剂，而不使用常规的蚀刻抑制剂如异丙醇。解决方案：将硅衬底浸入该蚀刻剂中以在衬底的表面上形成金字塔形突出和凹陷部分，并且蚀刻剂含有由以下通式（1）表示的化合物（A）或一种或多种从碱金属盐和碱土金属氢氧化物（B）中选出的浓度为0.1重量％以上且30重量％以下的碱金属氢氧化物。 RX（1）（式中，R表示4C-15C烷基，烯基和炔基中的任一个，X表示磺酸酯基。）可以通过使用在硅衬底的表面上形成精细的织构结构蚀刻剂版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011207753A Method for recovering silicon and method for producing silicon 有权
标题翻译：回收硅的方法和生产硅的方法
公开(公告)号：JP2011207753A
公开(公告)日：2011-10-20
申请号：JP2011053473
申请日：2011-03-10
申请人： Mitsubishi Chemicals Corp , Shinryo Corp , 三菱化学株式会社 , 株式会社新菱
发明人： YAMAHARA KEIJI , KATAYAMA TOSHIAKI , HASHIGUCHI TADASHI , SHIRAHAMA TOSHIKI , SAWAI TAKESHI
IPC分类号： C01B33/02 , B09B3/00 , C01B33/037
CPC分类号： C01B33/025 , C01B33/023
摘要： PROBLEM TO BE SOLVED: To provide a method recovering or producing silicon with abrasive grains of silicon carbide and cutting scraps that contain silicon as starting materials without separating these starting materials.SOLUTION: More specifically disclosed is a method for recovering or producing silicon from cutting scraps that contain silicon carbide produced during the cutting or grinding of silicon ingots or silicon wafers, and the method for recovering or producing silicon includes a process of producing silicon by heating the cutting scrap that contains silicon carbide along with a silica starting material.
摘要翻译：要解决的问题：提供一种在不分离这些起始材料的情况下，回收或生产含有碳化硅磨料颗粒和切削屑的方法，该方法含有硅作为起始原料。解决方案：更具体地公开了一种从切割屑回收或生产硅的方法其包含在硅锭或硅晶片的切割或研磨期间产生的碳化硅，并且回收或生产硅的方法包括通过加热含有碳化硅的切割废料以及二氧化硅起始材料来生产硅的方法。

9. 发明专利

JP2011132050A Method for recovering refined silicon-containing powder 有权
标题翻译：用于回收精炼含硅粉末的方法
公开(公告)号：JP2011132050A
公开(公告)日：2011-07-07
申请号：JP2009291132
申请日：2009-12-22
申请人： Shinryo Corp , 株式会社新菱
发明人： SAWAI TAKESHI , MORIYA DAISUKE , SHIRAHAMA TOSHIKI , NAKAMURA KIMITOSHI
IPC分类号： C01B33/02
CPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method for recovering a refined silicon-containing powder, in which efficient recovery is possible while removing surface oxides, metal impurities, etc., from a raw silicon-containing powder containing the surface oxides, metal impurities, etc., and avoiding reoxidation of a silicon-containing powder surface during refining.
SOLUTION: The method for recovering a refined silicon-containing powder includes: a pickling step where a raw silicon-containing powder whose surface is partly or entirely coated with silicon dioxide is brought into contact with an aqueous solution for pickling containing a nonionic surfactant having an HLB of ≤11 and/or an anionic surfactant having an HLB of ≤11 and hydrofluoric acid to clean the surface of the raw silicon-containing powder to obtain a silicon-containing powder (a); a water washing step of obtaining a silicon-containing powder (b) by washing the silicon-containing powder (a) with water; a solid-liquid separation step of obtaining a silicon-containing powder (c) by subjecting the silicon-containing powder (b) to solid-liquid separation; and a drying step of drying the silicon-containing powder (c).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决问题的方法：提供一种回收精制含硅粉末的方法，其中，从含有表面氧化物的原料含硅粉末中除去表面氧化物，金属杂质等，可以有效地回收，金属杂质等，并且在精炼期间避免含硅粉末表面的再氧化。解决方案：回收精制含硅粉末的方法包括：酸洗步骤，其中将表面部分或全部涂覆有二氧化硅的原料含硅粉末与含有非离子表面活性剂的酸洗水溶液接触， HLB为≤11的表面活性剂和/或HLB为≤11的阴离子表面活性剂和氢氟酸，以清洗含原料的含硅粉末的表面以获得含硅粉末（a）; 通过用水洗涤含硅粉末（a）获得含硅粉末（b）的水洗步骤; 固液分离步骤，通过使含硅粉末（b）进行固液分离来获得含硅粉末（c）; 和干燥步骤，干燥含硅粉末（c）。版权所有（C）2011，JPO＆INPIT

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