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1. 发明公开

EP1876651A4 SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权转让
标题翻译：太阳能电池制造方法，太阳能电池及其制造方法半导体元件
公开(公告)号：EP1876651A4
公开(公告)日：2013-09-11
申请号：EP06731542
申请日：2006-04-11
申请人： SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHIGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/04 , H01L21/225 , H01L31/06 , H01L31/18
CPC分类号： H01L21/2254 , H01L31/022425 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

2. 发明公开

EP1630873A4 SOLAR CELL AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制造工艺FOR THEIR
公开(公告)号：EP1630873A4
公开(公告)日：2007-03-14
申请号：EP04724198
申请日：2004-03-29
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO , JAPAN ADV INST SCIENCE & TECH
发明人： TAKAHASHI MASATOSHI , OHTSUKA HIROYUKI , MATSUMURA HIDEKI , MASUDA ATSUSHI , IZUMI AKIRA
IPC分类号： H01L31/0216 , H01L31/04 , H01L21/318 , H01L31/0224 , H01L31/072 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm% of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

3. 发明公开

EP1365455A4 SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制备方法
公开(公告)号：EP1365455A4
公开(公告)日：2006-09-20
申请号：EP02711237
申请日：2002-01-30
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： WATABE TAKENORI , OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , OJIMA SATOYUKI , ABE TAKAO
IPC分类号： H01L31/0224 , H01L31/04 , H01L31/0352 , H01L31/068 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/022425 , Y02E10/50
摘要： A solar cell (1) having a large number of grooves (2) made in parallel in the first major surface (24a) of a silicon single crystal substrate. An electrode (6) is formed on one inner side face of the groove (2). Each groove (2) is made on the first major surface (24a) in a direction not matching the direction. According to the structure, mechanical strength of the solar cell (1) is enhanced. The grooves (2) are preferably made in such a direction as making an angle of 4°-45° with respect to the closest direction on the acute angle side.

4. 发明专利

AU2004237524B2 Solar cell and process for producing the same 未知
公开(公告)号：AU2004237524B2
公开(公告)日：2009-09-17
申请号：AU2004237524
申请日：2004-03-29
申请人： SHINETSU CHEMICAL CO
发明人： TAKAHASHI MASATOSHI , MATSUMURA HIDEKI , OHTSUKA HIROYUKI , MASUDA ATSUSHI , IZUMI AKIRA
IPC分类号： H01L31/04 , H01L21/318 , H01L31/0216 , H01L31/068 , H01L31/072 , H01L31/18
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm% of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

5. 发明专利

AU2006242030A1 Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method 未知
公开(公告)号：AU2006242030A1
公开(公告)日：2006-11-09
申请号：AU2006242030
申请日：2006-04-11
申请人： SHINETSU CHEMICAL CO , SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD
发明人： WATABE TAKENORI , OHTSUKA HIROYUKI , ISHIKAWA NAOKI , AKATSUKA TAKESHI , ONISHI TSUTOMU , TAKAHASHI MASATOSHI , OJIMA SATOYUKI , SAISU SHIGENORI , UEGURI TOYOHIRO
IPC分类号： H01L31/04
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

6. 发明专利

DE60130187T2 未知
公开(公告)号：DE60130187T2
公开(公告)日：2008-05-21
申请号：DE60130187
申请日：2001-12-11
申请人： SHINETSU CHEMICAL CO
发明人： TAKAHASHI MASATOSHI , OGAWA MASAHIKO
IPC分类号： C09D183/06 , C08G59/30 , C08G65/10 , C08G77/38 , C08K5/00 , C08K5/42 , C08K5/56
摘要： The invention discloses a novel radiation-curable silicone-based release coating composition capable of giving a cured release coating film on a substrate such as a plastic resin film exhibiting excellent adhesion to a variety of substrate materials and excellent releasability. The radiation-curable releasing silicone composition of the invention comprises (A) an aromatic compound having, in a molecule, at least two cationically polymerizable organopolysiloxanyl groups such as epoxy-substituted organopolysiloxanyl groups as the silicone ingredient and (B) a photopolymerization initiator which is an onium salt compound such as diaryliodonium salt compounds.

7. 发明专利

ES2764073T3 Método de fabricación de célula solar 未知
公开(公告)号：ES2764073T3
公开(公告)日：2020-06-02
申请号：ES06731542
申请日：2006-04-11
申请人： SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHIGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/0224 , H01L21/225 , H01L31/04 , H01L31/06 , H01L31/068 , H01L31/18
摘要： Un método de fabricación de una célula solar (100) formando una unión p-n en un sustrato semiconductor (1) que tiene un primer tipo de conductividad, en el que, al menos: un primer material de recubrimiento (8) que contiene un dopante del segundo tipo de conductividad y un agente para impedir que se disperse un dopante, incluyendo dicho agente un compuesto de silicio, está recubierto sobre el sustrato semiconductor que tiene el primer tipo de conductividad mediante serigrafía, y un segundo material de recubrimiento (9) que contiene un dopante del segundo tipo de conductividad está recubierto sobre el sustrato semiconductor que tiene el primer tipo de conductividad y el primer material de recubrimiento mediante recubrimiento por centrifugación, de modo que el segundo material de recubrimiento puede entrar en contacto con al menos el primer material de recubrimiento; y, una primera capa de difusión (2) formada recubriendo el primer material de recubrimiento, y una segunda capa de difusión (3) formada recubriendo el segundo material de recubrimiento, teniendo la segunda capa de difusión una conductividad inferior a la de la primera capa de difusión, se forman simultáneamente mediante un tratamiento térmico de difusión que da como resultado la formación de dicha unión p-n, en el que, además: el primer material de recubrimiento y el segundo material de recubrimiento difieren entre sí en cualquiera de al menos, el porcentaje de un contenido de dopante, una viscosidad, el contenido del agente para impedir que se disperse un dopante y un agente para impedir autodopaje, incluyendo dicho agente un compuesto de silicio, un tipo de dopante y/o grosores de película de recubrimiento del primer material de recubrimiento y el segundo material de recubrimiento durante el recubrimiento; y en el que el porcentaje del contenido de dopante del primer material de recubrimiento es 4 o más veces mayor que el porcentaje del contenido de dopante del segundo material de recubrimiento.

8. 发明专利

DE60130187D1 未知
公开(公告)号：DE60130187D1
公开(公告)日：2007-10-11
申请号：DE60130187
申请日：2001-12-11
申请人： SHINETSU CHEMICAL CO
发明人： TAKAHASHI MASATOSHI , OGAWA MASAHIKO
IPC分类号： C09D183/06 , C08G59/30 , C08G65/10 , C08G77/38 , C08K5/00 , C08K5/42 , C08K5/56
摘要： The invention discloses a novel radiation-curable silicone-based release coating composition capable of giving a cured release coating film on a substrate such as a plastic resin film exhibiting excellent adhesion to a variety of substrate materials and excellent releasability. The radiation-curable releasing silicone composition of the invention comprises (A) an aromatic compound having, in a molecule, at least two cationically polymerizable organopolysiloxanyl groups such as epoxy-substituted organopolysiloxanyl groups as the silicone ingredient and (B) a photopolymerization initiator which is an onium salt compound such as diaryliodonium salt compounds.

9. 发明专利

AU2002238953B2 Solar cell and its manufacturing method 未知
公开(公告)号：AU2002238953B2
公开(公告)日：2007-03-29
申请号：AU2002238953
申请日：2002-03-19
申请人： SHINETSU CHEMICAL CO
发明人： TAKAHASHI MASATOSHI , WATABE TAKENORI , OHTSUKA HIROYUKI , OJIMA SATOYUKI
IPC分类号： H01L31/0236 , H01L31/0224 , H01L31/0352 , H01L31/04 , H01L31/068
摘要： A solar cell according to a first aspect of the invention is an OECO solar cell using a silicon single crystal substrate, wherein a minimum depth h of each groove always satisfies the relation of h>/= W1tan&thetas;, where &thetas; represents an angle between a line which connects the lower end, along the thickness-wise direction of the semiconductor single crystal substrate, of the electrode formed in one groove having the largest depth among all grooves as viewed along an arbitrary section normal to the longitudinal direction of the individual grooves, and the upper end of the inner side face of the same groove having no electrode formed thereon, and a reference line normal to the thickness-wise direction, and W1 represents a distance between both opening edges of the groove. A method of fabricating a solar cell according to a second aspect of the invention forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.

10. 发明专利

AU2006243111A1 Solar cell manufacturing method and solar cell 未知
公开(公告)号：AU2006243111A1
公开(公告)日：2006-11-09
申请号：AU2006243111
申请日：2006-04-07
申请人： SHINETSU CHEMICAL CO , SHINETSU HANDOTAI KK
发明人： OHTSUKA HIROYUKI , ISHIKAWA NAOKI , TAKAHASHI MASATOSHI
IPC分类号： H01L31/04 , H01L21/223 , H01L21/225
摘要： The present invention is a method for manufacturing a solar cell by forming a pn junction in a semiconductor substrate having a first conductivity type to manufacture a solar cell, including at least: applying a first coating material containing a dopant onto the semiconductor substrate having the first conductivity type; and performing vapor-phase diffusion heat treatment to form a first diffusion layer in a region applied with the first coating material and a second diffusion layer, which is formed next to the first diffusion layer through vapor-phase diffusion, with a conductivity lower than a conductivity of the first diffusion layer at the same time, and provides a solar cell. Hence, it is possible to provide a method for manufacturing a solar cell, which can manufacture a solar cell at a low cost in a simple and easy way while suppressing surface recombination in a light-receiving surface other than an electrode region and recombination in an emitter to increase photoelectric conversion efficiency of the solar cell, and a solar cell.

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