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1. 发明专利

AU2006242030A1 Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method 未知
公开(公告)号：AU2006242030A1
公开(公告)日：2006-11-09
申请号：AU2006242030
申请日：2006-04-11
申请人： SHINETSU CHEMICAL CO , SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD
发明人： WATABE TAKENORI , OHTSUKA HIROYUKI , ISHIKAWA NAOKI , AKATSUKA TAKESHI , ONISHI TSUTOMU , TAKAHASHI MASATOSHI , OJIMA SATOYUKI , SAISU SHIGENORI , UEGURI TOYOHIRO
IPC分类号： H01L31/04
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

2. 发明专利

ES2764073T3 Método de fabricación de célula solar 未知
公开(公告)号：ES2764073T3
公开(公告)日：2020-06-02
申请号：ES06731542
申请日：2006-04-11
申请人： SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHIGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/0224 , H01L21/225 , H01L31/04 , H01L31/06 , H01L31/068 , H01L31/18
摘要： Un método de fabricación de una célula solar (100) formando una unión p-n en un sustrato semiconductor (1) que tiene un primer tipo de conductividad, en el que, al menos: un primer material de recubrimiento (8) que contiene un dopante del segundo tipo de conductividad y un agente para impedir que se disperse un dopante, incluyendo dicho agente un compuesto de silicio, está recubierto sobre el sustrato semiconductor que tiene el primer tipo de conductividad mediante serigrafía, y un segundo material de recubrimiento (9) que contiene un dopante del segundo tipo de conductividad está recubierto sobre el sustrato semiconductor que tiene el primer tipo de conductividad y el primer material de recubrimiento mediante recubrimiento por centrifugación, de modo que el segundo material de recubrimiento puede entrar en contacto con al menos el primer material de recubrimiento; y, una primera capa de difusión (2) formada recubriendo el primer material de recubrimiento, y una segunda capa de difusión (3) formada recubriendo el segundo material de recubrimiento, teniendo la segunda capa de difusión una conductividad inferior a la de la primera capa de difusión, se forman simultáneamente mediante un tratamiento térmico de difusión que da como resultado la formación de dicha unión p-n, en el que, además: el primer material de recubrimiento y el segundo material de recubrimiento difieren entre sí en cualquiera de al menos, el porcentaje de un contenido de dopante, una viscosidad, el contenido del agente para impedir que se disperse un dopante y un agente para impedir autodopaje, incluyendo dicho agente un compuesto de silicio, un tipo de dopante y/o grosores de película de recubrimiento del primer material de recubrimiento y el segundo material de recubrimiento durante el recubrimiento; y en el que el porcentaje del contenido de dopante del primer material de recubrimiento es 4 o más veces mayor que el porcentaje del contenido de dopante del segundo material de recubrimiento.

3. 发明公开

EP1876651A4 SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权转让
标题翻译：太阳能电池制造方法，太阳能电池及其制造方法半导体元件
公开(公告)号：EP1876651A4
公开(公告)日：2013-09-11
申请号：EP06731542
申请日：2006-04-11
申请人： SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHIGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/04 , H01L21/225 , H01L31/06 , H01L31/18
CPC分类号： H01L21/2254 , H01L31/022425 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

4. 发明公开

EP2058865A4 METHOD FOR FORMING SEMICONDUCTOR SUBSTRATE AND ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR BATTERY 有权转让
标题翻译：方法形成用于制造太阳能电池的半导体衬底和电极，法
公开(公告)号：EP2058865A4
公开(公告)日：2013-06-12
申请号：EP07791807
申请日：2007-08-02
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： ISHIKAWA NAOKI , OJIMA SATOYUKI , OHTSUKA HIROYUKI , WATABE TAKENORI , SAISU SHIGENORI , UEGURI TOYOHIRO
IPC分类号： H01L31/04 , H01L21/28 , H01L21/288 , H01L31/0224
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50

5. 发明公开

EP1480277A4 SOLAR CELL MODULE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：太阳能电池组件及其制造方法
公开(公告)号：EP1480277A4
公开(公告)日：2009-08-19
申请号：EP02806885
申请日：2002-11-08
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： ABE TAKAO , OHTSUKA HIROYUKI
IPC分类号： H01L31/18 , H01L31/042
CPC分类号： H01L31/035281 , H01L31/042 , Y02E10/50
摘要： First cells 10, obtained by cutting each of disk-formed solar battery cells at cutting positions set in parallel on the main surface thereof symmetrically with respect to the center line which halves the main surface, are arranged in parallel and staggered manner to thereby fabricate a solar battery module 100. Also two segments of by-produced second cells 20R and 20L are paired so as to oppose both cut edges, and a plurality of thus-obtained pairs are arranged to thereby produce a solar battery module 101. This makes it possible to reduce loss of disk-formed wafers, and to raise the packing ratio higher than that in the case where the disk-formed cells are arranged in an intact form. This is successful in providing solar battery modules and a method of fabricating the same capable of raising the module-packing ratio while reducing the loss of single crystal wafer to be used.

6. 发明公开

EP2051304A4 SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL 有权转让
标题翻译：半导体基板，方法形成用于制造太阳能电池的电极和方法
公开(公告)号：EP2051304A4
公开(公告)日：2016-08-10
申请号：EP07790675
申请日：2007-07-12
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： ISHIKAWA NAOKI , OHTSUKA HIROYUKI , WATABE TAKENORI , OJIMA SATOYUKI , UEGURI TOYOHIRO
IPC分类号： H01L31/04 , H01L21/28 , H01L21/288 , H01L31/0224 , H01L31/05
CPC分类号： H01L31/022425 , C03C8/14 , C03C8/18 , H01L21/2225 , H01L31/05 , H01L2224/48463 , H01L2224/73265 , H01L2924/3025 , Y02E10/50 , H01L2924/00
摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.

7. 发明公开

EP1630873A4 SOLAR CELL AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制造工艺FOR THEIR
公开(公告)号：EP1630873A4
公开(公告)日：2007-03-14
申请号：EP04724198
申请日：2004-03-29
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO , JAPAN ADV INST SCIENCE & TECH
发明人： TAKAHASHI MASATOSHI , OHTSUKA HIROYUKI , MATSUMURA HIDEKI , MASUDA ATSUSHI , IZUMI AKIRA
IPC分类号： H01L31/0216 , H01L31/04 , H01L21/318 , H01L31/0224 , H01L31/072 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm% of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

8. 发明公开

EP1365455A4 SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制备方法
公开(公告)号：EP1365455A4
公开(公告)日：2006-09-20
申请号：EP02711237
申请日：2002-01-30
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： WATABE TAKENORI , OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , OJIMA SATOYUKI , ABE TAKAO
IPC分类号： H01L31/0224 , H01L31/04 , H01L31/0352 , H01L31/068 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/022425 , Y02E10/50
摘要： A solar cell (1) having a large number of grooves (2) made in parallel in the first major surface (24a) of a silicon single crystal substrate. An electrode (6) is formed on one inner side face of the groove (2). Each groove (2) is made on the first major surface (24a) in a direction not matching the direction. According to the structure, mechanical strength of the solar cell (1) is enhanced. The grooves (2) are preferably made in such a direction as making an angle of 4°-45° with respect to the closest direction on the acute angle side.

9. 发明公开

EP1892116A4 SCREEN PRINTING PLATE AND SCREEN PRINTER 有权
标题翻译：丝网印版和丝网印刷机
公开(公告)号：EP1892116A4
公开(公告)日：2009-07-08
申请号：EP06745999
申请日：2006-05-02
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： OJIMA SATOYUKI , ISHIKAWA NAOKI , OHTSUKA HIROYUKI
IPC分类号： B41N1/24 , B41F15/34 , B41F15/36 , H05K3/12
CPC分类号： B41F15/34 , B41F15/36 , B41N1/248 , B41P2215/12 , H05K3/1225 , H05K2203/0545
摘要： A screen printing plate (1) is provided with an opening (2) for ejecting a print material which forms a target print pattern (4) on a printing matter in screen printing. The screen printing plate is characterized in that the size of the opening (2) is reduced as compared with the target print pattern (4), and the end (3) of the opening (2) has a protruding and recessed pattern different from the target print pattern. Consequently, smear of the print material can be controlled in screen printing resulting in a high quality screen printing plate capable of printing a target print pattern even of fine design accurately with high transfer properties at a low cost.

10. 发明专利

AU2007289892A1 Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery 未知
公开(公告)号：AU2007289892A1
公开(公告)日：2008-03-06
申请号：AU2007289892
申请日：2007-08-02
申请人： SHINETSU CHEMICAL CO , SHINETSU HANDOTAI KK
发明人： UEGURI TOYOHIRO , ISHIKAWA NAOKI , SAISU SHIGENORI , OHTSUKA HIROYUKI , OJIMA SATOYUKI , WATABE TAKENORI
IPC分类号： H01L31/04 , H01L21/28 , H01L21/288 , H01L31/0224
摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt% or more and 95 wt% or less, the content of silver particles having an average particle diameter of 4 µm or greater and 8 µm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.

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