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1. 发明授权

EP0787562B1 Double side polishing machine and method of polishing opposite sides of a workpiece using the same 失效
标题翻译：双面研磨机和通过相同的方法抛光工件的相对侧的方法
公开(公告)号：EP0787562B1
公开(公告)日：1999-12-08
申请号：EP97300659.6
申请日：1997-01-31
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kato, Tadahiro , Masumura, Hisashi, A-301 355-3 Ohaza , Kudo, Hideo
IPC分类号： B24B37/04
CPC分类号： B24B37/08 , B24B37/28

2. 发明公开

EP0761599A3 Method of purifying alkaline solution and method of etching semiconductor wafers 失效
标题翻译：纯化碱性溶液的方法和半导体晶片的蚀刻方法
公开(公告)号：EP0761599A3
公开(公告)日：1999-01-07
申请号：EP96113770.0
申请日：1996-08-28
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Nakano, Masami , Uchiyama, Isao , Ajito, Toshio , Kudo, Hideo
IPC分类号： C01D1/28 , C23F1/32 , H01L21/302
CPC分类号： C01D1/28
摘要： A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.
摘要翻译：纯化碱性溶液的方法包括将金属硅和/或硅化合物溶解在碱性溶液中，并将碱性溶液中的非电离金属离子与金属硅和/或硅化合物溶解在其中时产生的反应产物一起溶解。该净化方法能够通过简单的操作以低成本显着减少碱性溶液中的金属离子。蚀刻半导体晶片的方法包括通过在碱性溶液中非离子化金属离子来纯化碱性溶液，并通过使用纯化的碱性溶液蚀刻半导体晶片。根据该蚀刻方法，由于半导体晶片的蚀刻导致的金属污染物水平大大降低，晶片质量既不降低也不降低半导体装置的特性。

3. 发明公开

EP0776030A2 Apparatus and method for double-side polishing semiconductor wafers 失效
标题翻译： Vorrichtung und Verfahren zur beidseitigen Polierung einer Halbleiterscheibe
公开(公告)号：EP0776030A2
公开(公告)日：1997-05-28
申请号：EP96308266.4
申请日：1996-11-15
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Masumura, Hisashi, Haranaka-shataku 106 , Suzuki, Kiyoshi , Kudo, Hideo
IPC分类号： H01L21/304 , H01L21/00 , B24B37/04 , B24B9/06
CPC分类号： H01L21/02024 , B24B9/065 , B24B37/08
摘要： In double-side polishing of semiconductor wafers W, not only the two main surfaces but also surface of the edge portion 42 can be polished in one operation with cost reduction and freedom from contamination. An apparatus 22 with twin polishing turn tables 24, 26 is used in the double-side polishing and the inner peripheral edge of each carrier hole 34 formed in a wafer carrier 32 is profiled such that the sectional profile of the inner peripheral edge is substantially the copy of the edge 42 of the wafer W placed in the hole 34.
摘要翻译：在半导体晶片W的双面抛光中，不仅可以在降低成本并且不受污染的一个操作中抛光边缘部分42的两个主表面而且还可以抛光表面。在双面抛光中使用具有双抛光转台24,26的装置22，并且形成在晶片载体32中的每个载体孔34的内周边缘被成形为使得内周边缘的截面轮廓基本上为放置在孔34中的晶片W的边缘42的复制

4. 发明授权

EP0407044B1 A shutter system 失效
标题翻译：封闭系统。
公开(公告)号：EP0407044B1
公开(公告)日：1994-03-02
申请号：EP90306455.8
申请日：1990-06-13
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kudo, Hideo
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , F16K3/207 , F16K51/02 , H01L21/67057 , H01L21/67126

5. 发明公开

EP0526245A1 An automatic cleaning apparatus for wafers 失效
标题翻译： Automatische ReinigungseinrichtungfürHalbleiterscheibe。
公开(公告)号：EP0526245A1
公开(公告)日：1993-02-03
申请号：EP92307019.7
申请日：1992-07-31
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kudo, Hideo , Uchiyama, Isao, 10 Aza-shimo-nishihira , Kimura, Yoshiharu , Suzuki, Morie , Tanakajima, Takashi
IPC分类号： H01L21/00
CPC分类号： H01L21/67173 , H01L21/02052 , H01L21/67028 , Y10S414/136
摘要： An automatic wafer cleaning apparatus of single wafer transfer type including a means for pricking up a horizontally held wafer upright, wafer brush which brushes a wafer both faces at a time while holding it vertically, cleaning baths for receiving and cleaning the vertically steeped wafers one at a time; a dryer bath for drying cleaned wafers; and a transportation means for vertically holding and transporting the wafers one at a time.
摘要翻译：一种单晶片转印型的自动晶片清洗装置，包括用于将水平保持的晶片直立的装置，用于在垂直保持时一次刷一个晶片两个面的晶片刷，清洗用于接收和清洁垂直浸没的晶片的洗涤槽一时间用于干燥清洁的晶片的干燥器浴; 以及一次一个地垂直保持和输送晶片的输送装置。

6. 发明公开

EP1564796A1 Semiconductor wafer processing method and semiconductor wafers produced by the same 审中-公开
标题翻译： HerstellungsverfahrenfürHalbleiterscheiben und danach hergestellte Halbleiterscheiben
公开(公告)号：EP1564796A1
公开(公告)日：2005-08-17
申请号：EP05010508.9
申请日：1998-12-08
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kudo, Hideo , Kato, Tadahiro, c/o Shirakawa R&D Center , Nihonmatsu, Takashi , Miyazaki, Seiichi , Yoshida, Masahiko
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/02019 , H01L21/30604 , H01L21/30608 , Y10S438/928 , Y10S438/959 , Y10S438/974 , Y10S438/977
摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.
摘要翻译：处理从单晶锭切片的半导体晶片的方法至少包括倒角，研磨，蚀刻，镜面抛光和清洁的步骤。在蚀刻步骤中，首先进行反应控制的酸蚀刻，然后进行扩散控制的酸蚀刻。反应控制的酸蚀刻的蚀刻量大于扩散控制的酸蚀刻的蚀刻量。该方法可以去除机械形成的损伤层，提高表面粗糙度，并有效降低局部形成的深坑的深度，同时保持通过研磨得到的晶片的平整度，以便产生具有光滑平坦的化学蚀刻晶片蚀刻的表面几乎不会导致发生颗粒和污染。

7. 发明授权

EP0761599B1 Method of purifying alkaline solution and method of etching semiconductor wafers 失效
标题翻译：一种用于纯化用于蚀刻半导体晶片的碱性溶液和方法方法
公开(公告)号：EP0761599B1
公开(公告)日：2003-10-29
申请号：EP96113770.0
申请日：1996-08-28
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Nakano, Masami , Uchiyama, Isao , Ajito, Toshio , Kudo, Hideo
IPC分类号： C01D1/28 , C23F1/32 , H01L21/302 , C01D1/32
CPC分类号： C01D1/28

8. 发明授权

EP0663685B1 Wafer holder 失效
标题翻译：板架
公开(公告)号：EP0663685B1
公开(公告)日：1998-02-25
申请号：EP94309602.4
申请日：1994-12-21
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Uchiyama, Isao , Kudo, Hideo
IPC分类号： H01L21/00
CPC分类号： H01L21/67017 , H01L21/67

9. 发明公开

EP0791953A2 Method of manufacturing semiconductor wafers 失效
标题翻译：一种用于生产半导体片的过程
公开(公告)号：EP0791953A2
公开(公告)日：1997-08-27
申请号：EP97101468.3
申请日：1997-01-30
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kato, Tadahiro , Masumura, Hisashi , Kudo, Hideo
IPC分类号： H01L21/302
CPC分类号： H01L21/02008
摘要： A method of manufacturing semiconductor wafers includes double side primary polishing step, back side etching step and single side mirror polishing step. The method is capable of easy sensor detection of the front and back sides of the wafer and higher flatness level wafer processing by forming etched rough surface at the back side of the double side polished wafer and wafer manufacturing process including a double side polishing step.

10. 发明公开

EP0788146A1 Method of polishing semiconductor wafers 失效
标题翻译： Verfahren zum Polieren von Halbleiterscheiben
公开(公告)号：EP0788146A1
公开(公告)日：1997-08-06
申请号：EP97101488.1
申请日：1997-01-30
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kato, Tadahiro , Masumura, Hisashi , Nakano, Masami , Kudo, Hideo
IPC分类号： H01L21/304 , B24B37/04 , H01L21/306
CPC分类号： H01L21/02024 , B24B37/30
摘要： A method of polishing semiconductor wafers includes a double side primary polishing step and a single side secondary polishing step using a single side polishing machine with a wafer holder including a template so bonded on a carrier plate as having one or more wafer receiving holes in which backing pads are disposed respectively for holding the back sides of the respective wafers fittingly received therein.. This method makes it to possible to hold a plurality of wafers at one time due to batch processing to thereby improve the productivity, and decrease extremely the generation of the defective dimples in the front side of the wafer. Compared with conventional single side polishing, the flatness level of the wafer polished with the double side polishing machine in this method is improved.
摘要翻译：抛光半导体晶片的方法包括双面一次抛光步骤和单面二次抛光步骤，其使用单面抛光机，其具有包括模板的晶片保持器，所述模板粘合在载体板上，具有一个或多个晶片接收孔，其中背衬分别设置衬垫以保持各个晶片的背面合适地容纳在其中。该方法使得可以由于批量处理而一次保持多个晶片，从而提高生产率，并且极大地减少在晶片正面的缺陷凹坑。与常规单面抛光相比，该方法中用双面抛光机抛光的晶片的平整度得到改善。

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