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1. 发明申请

WO2009060736A1 A SEMICONDUCTOR LAYER STRUCTURE 审中-公开
标题翻译：半导体层结构
公开(公告)号：WO2009060736A1
公开(公告)日：2009-05-14
申请号：PCT/JP2008/069400
申请日：2008-10-21
申请人： SHARP KABUSHIKI KAISHA , BOUSQUET, Valerie , KAUER, Matthias , TAN, Wei-Sin , HEFFERNAN, Jonathan , TAKAHASHI, Koji
发明人： BOUSQUET, Valerie , KAUER, Matthias , TAN, Wei-Sin , HEFFERNAN, Jonathan , TAKAHASHI, Koji
IPC分类号： H01S5/343 , H01L21/205 , H01L29/06 , H01L29/201 , H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02631 , H01S5/221 , H01S5/2216 , H01S5/2231 , H01S5/32341
摘要： A III-nitride compound device which has a layer of AlInN (7) having a non-zero In content, for example acting as a current blocking layer, is described. The layer of AlInN (7) has at least aperture defined therein. The layer of AlInN (7) is grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 10 2 ohm.cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having smaller resistivity. As a consequence, when the AlInN layer has an opening and is placed in a laser diode device, the resistance of the device is lower resulting in a device with better performance.
摘要翻译：描述了具有例如用作电流阻挡层的非零In含量的AlInN（7）层的III族氮化物复合器件。 AlInN（7）的层至少具有限定在其中的孔。 AlInN（7）的层与下层（例如下面的GaN层）以较小的晶格失配生长，从而防止在器件中增加晶体应变。通过使用优化的生长条件，使AlInN的电阻率高于102ohm·cm，从而在具有较低电阻率的层的多层半导体器件中用作电流阻挡层时防止电流流动。结果，当AlInN层具有开口并且放置在激光二极管器件中时，器件的电阻较低，导致具有更好性能的器件。

2. 发明申请

WO2013128901A1 A VERTICAL JUNCTION SOLAR CELL STRUCTURE AND METHOD 审中-公开
标题翻译：垂直结型太阳能电池结构与方法
公开(公告)号：WO2013128901A1
公开(公告)日：2013-09-06
申请号：PCT/JP2013/001135
申请日：2013-02-26
申请人： SHARP KABUSHIKI KAISHA
发明人： DAY, Stephen , DIMMOCK, James Andrew Robert , KAUER, Matthias
IPC分类号： H01L31/04 , B82Y20/00 , B82Y40/00
CPC分类号： H01L31/035281 , B82Y30/00 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A non-close-packed vertical junction photovoltaic device includes a substrate(50), a two dimensional array of elongate nanostructures(52) extending substantially perpendicularly from a surface of the substrate(50), and a thin film solar cell disposed over the nanostructures(52) such that the thin film solar cell substantially conforms to the topography of the nanostructures(52). An average separation(57) of nearest neighbor solar cell coated nanostructures(52) is greater than zero and less than a vacuum wavelength of light corresponding to a band gap of absorption of the thin film solar cell. The thin film solar cell may include an active region(53) that conforms to the elongate nanostructures(52), a first electrode(51) that conforms to a surface of the active region(53), and a second electrode. A separation(57) of opposing outer surfaces of the first electrode(51) is greater than zero and less than the vacuum wavelength of the light corresponding to the band gap of the active region(53).
摘要翻译：非紧密堆积的垂直结光伏器件包括基板（50），从基板（50）的表面基本上垂直延伸的细长纳米结构（52）的二维阵列，以及设置在纳米结构上的薄膜太阳能电池（52），使得薄膜太阳能电池基本上符合纳米结构（52）的形貌。最近相邻的太阳能电池涂覆的纳米结构（52）的平均间隔（57）大于零并且小于对应于薄膜太阳能电池的吸收带隙的光的真空波长。薄膜太阳能电池可以包括符合细长纳米结构（52）的活性区域（53），符合有源区域（53）的表面的第一电极（51）和第二电极。第一电极（51）的相对的外表面的分离（57）大于零并且小于对应于有源区（53）的带隙的光的真空波长。

3. 发明公开

EP3246950A1 BALLISTIC CARRIER SPECTRAL SENSOR 审中-公开
标题翻译：弹道载波频谱传感器
公开(公告)号：EP3246950A1
公开(公告)日：2017-11-22
申请号：EP17172004.8
申请日：2017-05-19
申请人： Sharp Kabushiki Kaisha
发明人： GALLARDO, Diego , DIMMOCK, James Andrew Robert , KAUER, Matthias , BERRYMAN-BOUSQUET, Valerie
IPC分类号： H01L27/146 , G01J3/28
CPC分类号： G01J3/2803 , H01L27/14621 , H01L27/14647 , H01L27/14681 , H01L31/022491 , H01L31/035209 , H01L31/035236 , H01L31/0543 , H01L31/055 , H01L31/11
摘要： A ballistic carrier spectral sensor includes a photon absorption region to generate photo-generated carriers from incident light; a first potential barrier region adjacent the photon absorption region and having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a second potential barrier region having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a spillage well region disposed between the first potential barrier region and the second potential barrier region and configured to collect photo-generated carriers having an energy lower than that required to pass through the second potential barrier region; and a collection region adjacent the second potential barrier region and configured to collect carriers that cross the second potential barrier region. A total thickness of the first potential barrier region and the spillage well region is less than a mean free path of the photo-generated carriers.
摘要翻译：一种弹道载波光谱传感器包括：光子吸收区域，用于从入射光产生光生载流子; 第一势垒区域，与光子吸收区域相邻并具有可调整的高度，从而限定穿过其中所需的光生载流子的最小能量; 具有可调高度的第二势垒区域，其限定了穿过其中所需的光生载流子的最小能量; 溢出阱区域，所述溢出阱区域设置在所述第一势垒区域和所述第二势垒区域之间，并被配置为收集能量低于穿过所述第二势垒区域所需能量的光生载流子; 以及与第二势垒区域相邻并被配置为收集与第二势垒区域交叉的载流子的收集区域。第一势垒区域和溢出阱区域的总厚度小于光生载流子的平均自由路径。

4. 发明公开

EP3301728A1 ENERGY SELECTIVE PHOTODETECTOR 审中-公开
标题翻译：能量选择性光电探测器
公开(公告)号：EP3301728A1
公开(公告)日：2018-04-04
申请号：EP17183442.7
申请日：2017-07-27
申请人： Sharp Kabushiki Kaisha
发明人： DIMMOCK, James Andrew Robert , KAUER, Matthias , EKINS-DAUKES, Nicholas J. , STAVRINOU, Paul N.
IPC分类号： H01L31/108
CPC分类号： H01L31/035227 , H01L31/02 , H01L31/02161 , H01L31/02168 , H01L31/022408 , H01L31/022425 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/07 , H01L31/108 , H01L31/1085 , Y02E10/50
摘要： A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100nm, with a thickness optimised to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimise reflection of light in the wavelength range of operation.
摘要翻译：半导体器件具有分层结构。该半导体器件包括厚度为1-100nm的金属层，其厚度被优化以吸收在工作波长范围内的光。该器件还包括附加的与欧姆电触点相邻的半导体层，其中金属层和半导体层之间的界面是电整流和能量选择性的。该器件还包括反射后表面，该反射后表面相对于在工作的波长范围内提供宽带反射的入射光定位在半导体层的对面。半导体层包括与金属层相邻的量子阱，其中能量选择性由量子阱提供，允许电荷载流子从金属层隧穿。该器件还可以包括沉积在金属层上的附加抗反射介电层，该附加抗反射介电层被配置成使波长范围内的光的反射最小化。

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