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1. 发明公开

EP3301728A1 ENERGY SELECTIVE PHOTODETECTOR 审中-公开
标题翻译：能量选择性光电探测器
公开(公告)号：EP3301728A1
公开(公告)日：2018-04-04
申请号：EP17183442.7
申请日：2017-07-27
申请人： Sharp Kabushiki Kaisha
发明人： DIMMOCK, James Andrew Robert , KAUER, Matthias , EKINS-DAUKES, Nicholas J. , STAVRINOU, Paul N.
IPC分类号： H01L31/108
CPC分类号： H01L31/035227 , H01L31/02 , H01L31/02161 , H01L31/02168 , H01L31/022408 , H01L31/022425 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/07 , H01L31/108 , H01L31/1085 , Y02E10/50
摘要： A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100nm, with a thickness optimised to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimise reflection of light in the wavelength range of operation.
摘要翻译：半导体器件具有分层结构。该半导体器件包括厚度为1-100nm的金属层，其厚度被优化以吸收在工作波长范围内的光。该器件还包括附加的与欧姆电触点相邻的半导体层，其中金属层和半导体层之间的界面是电整流和能量选择性的。该器件还包括反射后表面，该反射后表面相对于在工作的波长范围内提供宽带反射的入射光定位在半导体层的对面。半导体层包括与金属层相邻的量子阱，其中能量选择性由量子阱提供，允许电荷载流子从金属层隧穿。该器件还可以包括沉积在金属层上的附加抗反射介电层，该附加抗反射介电层被配置成使波长范围内的光的反射最小化。

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