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1. 发明申请

WO2011025266A2 LIGHT-EMITTING DIODE HAVING AN INTERLAYER WITH A HIGH VOLTAGE DENSITY, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有高压密度中间层的发光二极管及其制造方法
公开(公告)号：WO2011025266A2
公开(公告)日：2011-03-03
申请号：PCT/KR2010005708
申请日：2010-08-25
申请人： SEOUL OPTO DEVICE CO LTD , YOO HONG JAE , YE KYUNG HEE
发明人： YOO HONG JAE , YE KYUNG HEE
IPC分类号： H01L33/12
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： Disclosed is a light-emitting diode having an interlayer with a high voltage density, and a method for manufacturing same. The light-emitting diode comprises: a substrate; a buffer layer formed on the substrate; a gallium nitride-based N-type contact layer disposed on the buffer layer; a gallium nitride-based P-type contact layer disposed on the N-type contact layer; an active layer interposed between the N-type contact layer and the P-type contact layer; a gallium nitride-based first lower semiconductor layer interposed between the buffer layer and the N-type contact layer; and a gallium nitride-based first interlayer interposed between the first lower semiconductor layer and the N-type contact layer, wherein the first interlayer has a voltage density less than the buffer layer and greater than the first lower semiconductor layer. Voltage formed in the first lower semiconductor layer can be prevented from being transferred to the N-type contact layer by means of the first interlayer having a relatively high voltage density.
摘要翻译：公开了具有高电压密度的中间层的发光二极管及其制造方法。发光二极管包括：衬底; 形成在基板上的缓冲层; 设置在缓冲层上的氮化镓基N型接触层; 设置在所述N型接触层上的氮化镓基P型接触层; 介于所述N型接触层与所述P型接触层之间的有源层; 介于缓冲层和N型接触层之间的基于氮化镓的第一下半导体层; 以及介于所述第一下半导体层和所述N型接触层之间的基于氮化镓的第一中间层，其中所述第一中间层的电压密度小于所述缓冲层且大于所述第一下半导体层。借助于具有相对高电压密度的第一中间层，可以防止在第一下半导体层中形成的电压转移到N型接触层。

2. 发明申请

WO2011083923A3 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011083923A3
公开(公告)日：2011-09-29
申请号：PCT/KR2010009008
申请日：2010-12-16
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHUL , KAL DAE SUNG , YE KYUNG HEE , KIM KYOUNG WAN , YOON YEO JIN
发明人： SEO WON CHUL , KAL DAE SUNG , YE KYUNG HEE , KIM KYOUNG WAN , YOON YEO JIN
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电类型半导体层。

3. 发明申请

WO2013028000A3 LIGHT-EMITTING ELEMENT FOR HIGH-CURRENT DRIVE 审中-公开
标题翻译：用于高电流驱动的发光元件
公开(公告)号：WO2013028000A3
公开(公告)日：2013-05-10
申请号：PCT/KR2012006648
申请日：2012-08-22
申请人： SEOUL OPTO DEVICE CO LTD , YE KYUNG HEE , KAL DAE SUNG , NAM KI BUM
发明人： YE KYUNG HEE , KAL DAE SUNG , NAM KI BUM
IPC分类号： H01L33/48
CPC分类号： H01L33/504 , F21K9/237 , F21K9/64 , F21V29/89 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , G02B5/283 , H01L25/0753 , H01L27/15 , H01L33/0004 , H01L33/46 , H01L33/50 , H01L33/507 , H01L33/58 , H01L33/60 , H01L2924/0002 , H05B33/0857 , H01L2924/00
摘要： Disclosed is a light-emitting element for high-current drive. The light-emitting element comprises: a light-emitting diode chip which emits ultraviolet light; and a wavelength conversion layer which converts the wavelength of the ultraviolet light emitted from the light-emitting diode chip into visible light. The light-emitting diode chip is driven at a current density of at least 150 A/cm2.
摘要翻译：公开了一种用于大电流驱动的发光元件。该发光元件包括：发射紫外光的发光二极管芯片; 以及波长转换层，其将从发光二极管芯片发射的紫外光的波长转换为可见光。发光二极管芯片以至少150A / cm 2的电流密度驱动。

4. 发明申请

WO2011115361A3 LIGHT-EMITTING DEVICE HAVING A PLURALITY OF LIGHT-EMITTING CELLS 审中-公开
标题翻译：具有多个发光细胞的发光器件
公开(公告)号：WO2011115361A3
公开(公告)日：2011-11-10
申请号：PCT/KR2011000213
申请日：2011-01-12
申请人： SEOUL OPTO DEVICE CO LTD , YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL , YANG YOUNG EUN , LEE SUM GEUN
发明人： YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL , YANG YOUNG EUN , LEE SUM GEUN
IPC分类号： H01L33/08 , H05B37/02
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The light-emitting device according to the present invention comprises: at least three pairs of half-wave light-emitting units comprising half-wave light-emitting units in pairs in which terminals of the same polarity are electrically connected together, arranged in such a way that the terminals of the same polarity that are electrically connected together in any one pair have the opposite polarity to terminals of the same polarity that are electrically connected together in any other pair to which the first pair is adjacent; and full-wave light-emitting units electrically connected to two adjacent pairs of half-wave light-emitting units, wherein each of the half-wave light-emitting units and each of the full-wave light-emitting units has at least one light-emitting cell, and each of the terminals of the full-wave light-emitting units is respectively electrically connected to the terminals of the same polarity that are electrically connected together in the half-wave light-emitting units.
摘要翻译：根据本发明的发光器件包括：至少三对半波发光单元，它们成对地包括半波发光单元，其中相同极性的端子电连接在一起，以这样的方式布置使得在任何一对中电连接在一起的相同极性的端子具有与在第一对所邻接的任何其他对中的电连接在一起的相同极性的端子相反的极性; 以及全波发光单元，电性连接至相邻的两对半波发光单元，其中每一半波发光单元及每一全波发光单元具有至少一光源发射单元，并且全波发光单元的每个端子分别电连接到在半波发光单元中电连接在一起的相同极性的端子。

5. 发明申请

WO2011129548A3 SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：用于使用其的发光装置的晶体生长和制造方法的基板组件
公开(公告)号：WO2011129548A3
公开(公告)日：2012-03-01
申请号：PCT/KR2011002454
申请日：2011-04-07
申请人： SEOUL OPTO DEVICE CO LTD , LEE CHUNG HOON , YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL
发明人： LEE CHUNG HOON , YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL
IPC分类号： H01L33/12 , H01L33/02
CPC分类号： H01L33/0079 , Y10T428/24942
摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.
摘要翻译：公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

6. 发明申请

WO2011083940A2 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2011083940A2
公开(公告)日：2011-07-14
申请号：PCT/KR2011000002
申请日：2011-01-03
申请人： SEOUL OPTO DEVICE CO LTD , KIM KWANG JOONG , HAN CHANG SUK , CHOI SEUNG KYU , NAM KI BUM , KIM NAM YOON , KIM KYUNG HAE , YOON JU HYUNG , YE KYUNG HEE
发明人： KIM KWANG JOONG , HAN CHANG SUK , CHOI SEUNG KYU , NAM KI BUM , KIM NAM YOON , KIM KYUNG HAE , YOON JU HYUNG , YE KYUNG HEE
IPC分类号： H01L33/04 , H01L33/12 , H01L33/14
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
摘要： Disclosed are a reliable light-emitting diode and a method for manufacturing same. The light-emitting diode according to one embodiment of the present invention comprises: a silicon-doped n-type contact layer; a p-type contact layer; an active region interposed between the n-type contact layer and the p-type contact layer; a super-lattice layer interposed between the n-type contact layer and the active region; a non-doped intermediate layer interposed between the super-lattice layer and the n-type contact layer; and an electronic reinforcement layer interposed between the non-doped intermediate layer and the super-lattice layer. Only the final layer of the super-lattice layer, which is closest to the active region, is intentionally doped with silicon, and the silicon-doped concentration of the final layer is higher than the silicon-doped concentration of the n-type contact layer. Almost all layers of the super=lattice layer which is close to the active region are intentionally not doped with silicon, thereby reducing leakage current. The final layer of the super-lattice layer, which is closest to the active region, is doped with high concentration silicon, thereby preventing the degradation of junction characteristics and improving electrostatic discharge characteristics.
摘要翻译：公开了一种可靠的发光二极管及其制造方法。根据本发明的一个实施例的发光二极管包括：掺硅的n型接触层; p型接触层; 介于n型接触层和p型接触层之间的有源区; 介于n型接触层和有源区之间的超晶格层; 介于超晶格层和n型接触层之间的非掺杂中间层; 以及插入在非掺杂中间层和超晶格层之间的电子加强层。最靠近有源区的超晶格层的最终层有意地用硅掺杂，并且最终层的掺硅浓度高于n型接触层的掺硅浓度。接近有源区的超级晶格层的几乎所有层都有意地不掺杂硅，从而减少漏电流。最接近有源区的超晶格层的最后一层掺杂有高浓度硅，从而防止结特性的降低和改善静电放电特性。

7. 发明申请

WO2010050694A3 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2010050694A3
公开(公告)日：2010-07-15
申请号：PCT/KR2009006120
申请日：2009-10-22
申请人： SEOUL OPTO DEVICE CO LTD , LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
发明人： LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
IPC分类号： H01L33/08
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： Disclosed is a light emitting diode having a plurality of light emitting cells. The light emitting diode comprises half-wave light emitting units each of which has at least one light emitting cell and a first and a second terminal, and full-wave light emitting units each of which has at least one light emitting cell and a third terminal and a fourth terminal. The third terminals of the full-wave light emitting units are electrically and commonly connected to the second terminals of two half-wave light emitting units, and the fourth terminals of the full-wave light emitting units are electrically and commonly connected to the first terminals of another two half-wave light emitting units. Further, one of the half-wave light emitting units is connected in series between the third terminal of one of said two full-wave light emitting units disposed adjacent to each other and the fourth terminal of the other of the two full-wave light emitting units. Another half-wave light emitting unit is connected in series between the fourth terminal of one of said two full-wave light emitting units and the third terminal of the other of the two-full wave light emitting units. Whereby, the efficiency of using light emitting cells can be improved, and a light emitting diode which is stable to reverse voltage can be obtained.
摘要翻译：公开了具有多个发光单元的发光二极管。发光二极管包括半波发光单元，每个发光单元具有至少一个发光单元和第一和第二端子，全波发光单元各自具有至少一个发光单元和第三端子和第四终端。全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且全波发光单元的第四端子电连接到第一端子的另外两个半波发光单元。此外，半波发光单元中的一个串联连接在彼此相邻布置的所述两个全波发光单元中的一个的第三端子和两个全波发光区域中的另一个的第四端子单位。另一个半波发光单元串联连接在所述两个全波发光单元之一的第四端与两全波发光单元中另一个的第三端之间。由此，可以提高使用发光单元的效率，可以获得对反向电压稳定的发光二极管。

8. 发明公开

KR20100079843A Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same 有权
标题翻译：具有非极性发光电池的多重性的发光装置及其制造方法
公开(公告)号：KR20100079843A
公开(公告)日：2010-07-08
申请号：KR20080138422
申请日：2008-12-31
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SEO WON CHEOL , KIM KWANG JOONG , YE KYUNG HEE
IPC分类号： H01L33/16
CPC分类号： H01L33/007 , H01L27/156
摘要： PURPOSE: While dividing light emitting cells, the emitting device having a plurality of non-polar light emitting cells and the method for manufacturing that prevent the exposure of metal. Inside of the light emitting cell the electrical short by the metal etching by-product is prevented. CONSTITUTION: A first substrate(21) of sapphire having the top surface is the r side, and the side or the m side or the silicon carbide is prepared. The first substrate comprises the growth prevention pattern(23) and recess region of the stripe shape having the opening. The nitride semiconductor layer is formed in the top of the substrate having recess region. Nitride semiconductor layers are patterned and light emitting cells which each other separate are formed. Nitride semiconductor layers comprises the first electrical conduction semiconductor layer(25), and the active layer(27) and the second electrical conduction semiconductor layer.
摘要翻译：目的：在分配发光单元的同时，具有多个非极性发光单元的发光器件和防止金属暴露的制造方法。在发光单元的内部，防止金属蚀刻副产物的电短路。构成：具有顶表面的蓝宝石的第一衬底（21）是r侧，并且制备侧面或m侧或碳化硅。第一衬底包括生长防止图案（23）和具有开口的条纹形状的凹部区域。氮化物半导体层形成在具有凹陷区域的衬底的顶部。形成氮化物半导体层，并形成彼此分开的发光单元。氮化物半导体层包括第一导电半导体层（25）和有源层（27）和第二导电半导体层。

9. 发明公开

KR20100079693A Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same 有权
标题翻译：具有非极性发光电池的多重性的发光装置及其制造方法
公开(公告)号：KR20100079693A
公开(公告)日：2010-07-08
申请号：KR20080138238
申请日：2008-12-31
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM KWANG JOONG , SEO WON CHEOL , KIM DAE WON , KAL DAE SUNG , YE KYUNG HEE
IPC分类号： H01L33/16 , H01L33/08 , H01L33/14
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE: A light emitting device with a plurality of non-polar light emitting cells and a manufacturing method thereof are provided to prevent a metal etch byproduct by preventing the exposure of the metal when light emitting cells are separated. CONSTITUTION: A GaN substrate includes a non-polar or semi-polar crystal surface to form an angle of intersection with a C surface and an upper surface. Nitride semiconductor layers(25,27,29) are grown on the substrate. Separated light emitting cells are formed by patterning the nitride semiconductor layers. Recess regions are formed by partially removing the substrate under the separation regions between the light emitting cells. An insulation layer is formed to fill the recess regions. The substrate is partially removed to expose the insulation layer.
摘要翻译：目的：提供具有多个非极性发光单元的发光器件及其制造方法，以防止当发光单元分离时防止金属暴露而导致金属蚀刻副产物。构成：GaN衬底包括非极性或半极性晶体表面以形成与C表面和上表面的交叉角。在衬底上生长氮化物半导体层（25,27,29）。通过图案化氮化物半导体层来形成分离的发光单元。通过在发光单元之间的分离区域之下部分地去除衬底而形成凹陷区域。形成绝缘层以填充凹部区域。部分地去除衬底以暴露绝缘层。

10. 发明公开

KR20100054172A Light emitting device module for ac power operation 有权
标题翻译：用于交流电源运行的发光装置模块
公开(公告)号：KR20100054172A
公开(公告)日：2010-05-25
申请号：KR20080108172
申请日：2008-11-03
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE CHUNG HOON , KAL DAE SUNG , KIM DAE WON , YE KYUNG HEE , YOON YEO JIN
IPC分类号： H01L33/58
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PURPOSE: A light emitting module for AC is provided to alleviate flicker effect without an additional circuit for delaying an AC signal. CONSTITUTION: An LED module(100) for AC includes a first light emitting device(10a) and a second light emitting device(10b). The first and second light emitting devices includes a light emitting diode chip(20a) with a plurality of light emitting cells on a single substrate(30) and a delay phosphor(21a) for changing the wavelength of light emitted from the light emitting diode chip. The second light emitting device has higher afterglow brightness by the delay phosphor than that of the first light emitting device.
摘要翻译：目的：提供用于AC的发光模块以减轻闪烁效应，而不需要用于延迟AC信号的附加电路。构成：用于AC的LED模块（100）包括第一发光装置（10a）和第二发光装置（10b）。第一和第二发光器件包括在单个衬底（30）上具有多个发光单元的发光二极管芯片（20a）和用于改变从发光二极管芯片发射的光的波长的延迟荧光体（21a）。第二发光器件具有比第一发光器件的延迟荧光体更高的余辉亮度。

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