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1. 发明申请

WO2012173416A3 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MENUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制作方法
公开(公告)号：WO2012173416A3
公开(公告)日：2013-03-28
申请号：PCT/KR2012004712
申请日：2012-06-15
申请人： SEOUL OPTO DEVICE CO LTD , SUH DUCK II , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM JI HYE
发明人： SUH DUCK II , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM JI HYE
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
摘要翻译：本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

2. 发明申请

WO2012026695A3 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
标题翻译：提高发光效率的发光二极管
公开(公告)号：WO2012026695A3
公开(公告)日：2012-05-31
申请号：PCT/KR2011005872
申请日：2011-08-11
申请人： SEOUL OPTO DEVICE CO LTD , YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , SUH DUK IL , LEE KEUM JU , LEE JIN WOONG , JEONG DA YEON
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , SUH DUK IL , LEE KEUM JU , LEE JIN WOONG , JEONG DA YEON
IPC分类号： H01L33/36
CPC分类号： H01L33/385 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0091
摘要： xemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.
摘要翻译：本发明的示例性实施例涉及发光二极管。根据本发明示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板以及布置在基板上的发光结构。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。包括凹部和凸部的透明电极层被布置在第二导电类型半导体层上。第一电极焊盘接触第一导电型半导体层的上表面并位于第一侧边缘的中心附近。两个第二电极焊盘位于第二侧边的相对远端附近以向第二导电类型半导体层供应电流。第一焊盘延伸部从第一电极焊盘延伸并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

3. 发明申请

WO2012015153A3 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管
公开(公告)号：WO2012015153A3
公开(公告)日：2012-04-19
申请号：PCT/KR2011003266
申请日：2011-05-02
申请人： SEOUL OPTO DEVICE CO LTD , SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
发明人： SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
IPC分类号： H01L33/10 , H01L33/46
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A light-emitting diode having a distributed Bragg reflector is disclosed. The light-emitting diode includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first layer and the second layer. A first distributed Bragg reflector (DBR) is arranged on a second surface of the substrate opposite to the first surface, the first DBR to reflect light emitted from the light-emitting structure. The first DBR has a reflectivity of at least 90% with respect to light of a first wavelength in a blue range, light of a second wavelength in a green range, and light of a third wavelength in a red range. The first DBR has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
摘要翻译：公开了具有分布式布拉格反射器的发光二极管。发光二极管包括布置在衬底的第一表面上的发光结构，该发光结构包括第一半导体层，第二半导体层以及介于第一层和第二层之间的有源层。第一分布布拉格反射器（DBR）布置在基板的与第一表面相对的第二表面上，第一DBR反射从发光结构发射的光。第一DBR相对于蓝色范围中的第一波长的光，绿色范围中的第二波长的光和红色范围中的第三波长的光具有至少90％的反射率。第一DBR具有交替堆叠的SiO 2层和Nb 2 O 5层的层压结构。

4. 发明申请

WO2012165903A2 SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE AND LASER-PROCESSING APPARATUS COMPRISING SAME 审中-公开
标题翻译：半导体发光器件，其制造方法和半导体发光器件封装以及包含其的激光加工装置
公开(公告)号：WO2012165903A2
公开(公告)日：2012-12-06
申请号：PCT/KR2012004350
申请日：2012-06-01
申请人： SEOUL OPTO DEVICE CO LTD , LEE JIN WOONG , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM SHIN HYOUNG , KIM TAE GYUN , KIM IN SOO
发明人： LEE JIN WOONG , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM SHIN HYOUNG , KIM TAE GYUN , KIM IN SOO
IPC分类号： H01L33/20 , H01L21/78
CPC分类号： H01L33/24 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L2933/0091
摘要： Disclosed is a semiconductor light-emitting device having superior light-extracting efficiency in a lateral direction and enabling a substrate to be easily cut, a method for manufacturing the semiconductor light-emitting device, and a semiconductor light-emitting device package and a laser-processing apparatus comprising the semiconductor light-emitting device. The semiconductor light-emitting device comprises: a sapphire substrate; and a nitride structure consisting of a plurality of nitride epitaxial layers which are stacked on the upper surface of the sapphire substrate and which comprise an active layer for generating light. Each horizontal cross-section of the substrate and the nitride structure has a diamond shape having two acute angles and two obtuse angles. One or more reforming areas having a horizontal-band shape are formed on at least one surface of the substrate.
摘要翻译：公开了一种在横向上具有优异的光提取效率并使得能够容易地切割基板的半导体发光器件，半导体发光器件的制造方法以及半导体发光器件封装和激光器件，包括半导体发光器件的处理设备。半导体发光器件包括：蓝宝石衬底; 以及由多个氮化物外延层组成的氮化物结构，其堆叠在蓝宝石衬底的上表面上并且包括用于产生光的有源层。衬底和氮化物结构的每个水平横截面具有具有两个锐角和两个钝角的菱形形状。在基板的至少一个表面上形成具有水平带形状的一个或多个重整区域。

5. 发明申请

WO2011083923A3 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011083923A3
公开(公告)日：2011-09-29
申请号：PCT/KR2010009008
申请日：2010-12-16
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHUL , KAL DAE SUNG , YE KYUNG HEE , KIM KYOUNG WAN , YOON YEO JIN
发明人： SEO WON CHUL , KAL DAE SUNG , YE KYUNG HEE , KIM KYOUNG WAN , YOON YEO JIN
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电类型半导体层。

6. 发明申请

WO2010050694A3 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2010050694A3
公开(公告)日：2010-07-15
申请号：PCT/KR2009006120
申请日：2009-10-22
申请人： SEOUL OPTO DEVICE CO LTD , LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
发明人： LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
IPC分类号： H01L33/08
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： Disclosed is a light emitting diode having a plurality of light emitting cells. The light emitting diode comprises half-wave light emitting units each of which has at least one light emitting cell and a first and a second terminal, and full-wave light emitting units each of which has at least one light emitting cell and a third terminal and a fourth terminal. The third terminals of the full-wave light emitting units are electrically and commonly connected to the second terminals of two half-wave light emitting units, and the fourth terminals of the full-wave light emitting units are electrically and commonly connected to the first terminals of another two half-wave light emitting units. Further, one of the half-wave light emitting units is connected in series between the third terminal of one of said two full-wave light emitting units disposed adjacent to each other and the fourth terminal of the other of the two full-wave light emitting units. Another half-wave light emitting unit is connected in series between the fourth terminal of one of said two full-wave light emitting units and the third terminal of the other of the two-full wave light emitting units. Whereby, the efficiency of using light emitting cells can be improved, and a light emitting diode which is stable to reverse voltage can be obtained.
摘要翻译：公开了具有多个发光单元的发光二极管。发光二极管包括半波发光单元，每个发光单元具有至少一个发光单元和第一和第二端子，全波发光单元各自具有至少一个发光单元和第三端子和第四终端。全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且全波发光单元的第四端子电连接到第一端子的另外两个半波发光单元。此外，半波发光单元中的一个串联连接在彼此相邻布置的所述两个全波发光单元中的一个的第三端子和两个全波发光区域中的另一个的第四端子单位。另一个半波发光单元串联连接在所述两个全波发光单元之一的第四端与两全波发光单元中另一个的第三端之间。由此，可以提高使用发光单元的效率，可以获得对反向电压稳定的发光二极管。

7. 发明申请

WO2009084857A3 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2009084857A3
公开(公告)日：2009-10-08
申请号：PCT/KR2008007658
申请日：2008-12-24
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHEOL , KIM CHANG YOUN , YOON YEO JIN
发明人： SEO WON CHEOL , KIM CHANG YOUN , YOON YEO JIN
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L2224/73265
摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers includes an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
摘要翻译：这里公开了一种发光二极管。发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。在牺牲基板上生长半导体层，并且支撑基板与牺牲基板均匀。

8. 发明公开

KR20120002130A Flip-chip light-emitting device and method of manufacturing the same 审中-公开
标题翻译：闪光灯发光装置及其制造方法
公开(公告)号：KR20120002130A
公开(公告)日：2012-01-05
申请号：KR20100062863
申请日：2010-06-30
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE KYU HO , YOON YEO JIN , KIM KYOUNG WAN , CHOI JAE RYANG
IPC分类号： H01L33/10 , H01L33/44
CPC分类号： H01L33/46 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32
摘要： PURPOSE: A flip-chip light-emitting device and a method of manufacturing the same are provided to improve the optical extraction efficiency of a light emitting device by reflecting light circulating inside the light emitting device outside. CONSTITUTION: In a flip-chip light-emitting device and a method of manufacturing the same, an N type semiconductor layer(1210), an active layer(1230), and a p-type semiconductor layer(1250) are formed on a transparent substrate(1100). A transparent electrode layer(1510) is formed on the p-type semiconductor layer. A P-type electrode pad(1550) is formed on the transparent electrode layer. An insulating layer(1390) is formed between the P-type electrode pad and n type electrode pads(1310,1330). Under bump metals(1410,1430,1450) are formed on the N type electrode and the P-type electrode pad.
摘要翻译：目的：提供一种倒装芯片发光器件及其制造方法，以通过将发光器件内部循环的光反射到外部来提高发光器件的光学提取效率。构成：在倒装芯片的发光装置及其制造方法中，在透明的（透明的）形成有N型半导体层（1210），有源层（1230）和p型半导体层（1250）衬底（1100）。在p型半导体层上形成透明电极层（1510）。在透明电极层上形成P型电极焊盘（1550）。在P型电极焊盘和n型电极焊盘之间形成绝缘层（1390）（1310,1330）。在N型电极和P型电极焊盘上形成凹凸金属（1410,1430,1450）。

9. 发明公开

KR20090060271A LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING 审中-公开
标题翻译：具有电流扩展电极的发光二极管
公开(公告)号：KR20090060271A
公开(公告)日：2009-06-11
申请号：KR20097003347
申请日：2009-02-18
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOON YEO JIN , KIM DAE WON
IPC分类号： H01L33/36
摘要： A light emitting diode is provided to maximize current spreading by arranging bottom extension parts and top extension parts into a rotation symmetry structure. A bottom semiconductor layer(13) is formed on a substrate. A top semiconductor layer is positioned on a top part of the bottom semiconductor layer in order to expose edge regions of the bottom semiconductor layer. The top semiconductor layer has an indentation part(18d). An active layer is interposed between the bottom semiconductor layer and the top semiconductor layer. A bottom electrode(21) is formed on the bottom semiconductor layer exposed of a first edge part of the substrate. A transparent electrode layer(19) is formed on the top semiconductor layer. A top electrode(31) is formed on the transparent electrode layer of a second edge part of the substrate. Bottom extension parts(25d) are extended from the bottom electrode, and are formed on edge regions of the exposed bottom semiconductor layer and regions of the bottom semiconductor layer exposed by the indentation part. Top extension parts are formed on the transparent electrode layer, and are extended from the top electrode.
摘要翻译：提供发光二极管以通过将底部延伸部分和顶部延伸部分布置成旋转对称结构来最大化电流扩展。底部半导体层（13）形成在基板上。顶部半导体层位于底部半导体层的顶部以便露出底部半导体层的边缘区域。顶部半导体层具有压痕部分（18d）。在底部半导体层和顶部半导体层之间插入有源层。底部电极（21）形成在衬底的第一边缘部分露出的底部半导体层上。在顶部半导体层上形成透明电极层（19）。在基板的第二边缘部分的透明电极层上形成顶部电极（31）。底部延伸部分（25d）从底部电极延伸，并且形成在暴露的底部半导体层的边缘区域和由凹陷部分露出的底部半导体层的区域。顶部延伸部分形成在透明电极层上，并从顶部电极延伸。

10. 发明公开

KR20120031207A Light emitting diode and method for fabricating the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：KR20120031207A
公开(公告)日：2012-03-30
申请号：KR20120024512
申请日：2012-03-09
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM CHANG YEON , YOON YEO JIN
IPC分类号： H01L33/62 , H01L33/36
CPC分类号： H01L33/62 , H01L27/156 , H01L33/32 , H01L33/42
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to simplify manufacturing processes by omitting an insulation layer between a wiring layer and a semiconductor layer. CONSTITUTION: A plurality of insulating partitions(72) are formed on a substrate. A plurality of light emitting cells(56) are located between adjacent partitions on the substrate. A connection unit electrically connects the light emitting cells. The plurality of light emitting cells includes a lower semiconductor layer, an active layer(57), and an upper semiconductor layer.
摘要翻译：目的：提供一种发光二极管及其制造方法，以通过省略布线层和半导体层之间的绝缘层来简化制造工艺。构成：在基板上形成多个绝缘隔板（72）。多个发光单元（56）位于基板上的相邻隔板之间。连接单元电连接发光单元。多个发光单元包括下半导体层，有源层（57）和上半导体层。

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