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1. 发明申请

WO2007089360A3 HETEROSTRUCTURE INCLUDING LIGHT GENERATING STRUCTURE CONTAINED IN POTENTIAL WELL 审中-公开
公开(公告)号：WO2007089360A3
公开(公告)日：2007-08-09
申请号：PCT/US2006/060464
申请日：2006-11-02
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , GASKA, Remigijus , SHUR, Michael , ZHANG, Jianping
发明人： GASKA, Remigijus , SHUR, Michael , ZHANG, Jianping
IPC分类号： H01L27/15
摘要： A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.

2. 发明申请

WO2006062880A2 NITRIDE-BASED LIGHT EMITTING HETEROSTRUCTURE 审中-公开
标题翻译：基于氮化物的发光结构
公开(公告)号：WO2006062880A2
公开(公告)日：2006-06-15
申请号：PCT/US2005/043866
申请日：2005-12-05
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , GASKA, Remigijus , ZHANG, Jianping , SHUR, Michael
发明人： GASKA, Remigijus , ZHANG, Jianping , SHUR, Michael
IPC分类号： H01L31/109
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/105 , H01S5/2009 , H01S5/3216 , H01S5/3407 , H01S5/3415 , H01S5/34333 , H01S5/34346
摘要： An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
摘要翻译：提供了一种改进的基于氮化物的发光异质结构。氮化物系发光异质结构包括电子供给层和在其间设置有发光结构的空穴供给层。光产生结构包括一组阻挡层，每个阻挡层具有梯度组成和一组量子阱，每个量子阱邻接至少一个势垒层。诸如每个量子阱的厚度的其它特征可以被选择/并入到异质结构中以改善其一个或多个特性。此外，包括渐变组合物的一个或多个附加层可以包含在发光结构外部的异质结构中。渐变组分层在光生成结构中进入量子阱之前导致电子失去能量，这使得电子能够在量子阱中更有效地与空穴重新结合。

3. 发明申请

WO2012174367A2 DEVICE WITH INVERTED LARGE SCALE LIGHT EXTRACTION STRUCTURES 审中-公开
标题翻译：具有反射大规模光提取结构的装置
公开(公告)号：WO2012174367A2
公开(公告)日：2012-12-20
申请号：PCT/US2012/042646
申请日：2012-06-15
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
发明人： SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , B82Y20/00 , H01L33/22 , H01L2933/0083 , H01L2933/0091 , H01S5/0224 , H01S5/34333
摘要： An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
摘要翻译：提供了包括用于改善辐射通过界面的传播的粗糙度分量的界面。界面包括第一层的第一成型表面，其包括一组大的粗糙度部件，其提供具有第一特征标尺的第一成型表面的第一变型和第二层的第二成型表面，所述第二成型表面包括一组小的粗糙度部件，具有第二特征标尺的第二成型表面的第二变型。第一特征量级比第二特征量级大约大一个数量级。表面可以使用接合材料粘合在一起，并且填料也可以存在于界面中。

4. 发明申请

WO2012174311A2 EMITTING DEVICE WITH IMPROVED EXTRACTION 审中-公开
标题翻译：具有改进提取的发射装置
公开(公告)号：WO2012174311A2
公开(公告)日：2012-12-20
申请号：PCT/US2012/042555
申请日：2012-06-15
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
发明人： SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/22
CPC分类号： H01L33/60 , F21V5/002 , H01L33/0045 , H01L33/007 , H01L33/20 , H01L33/22 , H01L2933/0083 , Y10T29/49
摘要： A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
摘要翻译：提供了用于改善辐射通过界面的传播的异型表面。成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。成形表面还包括一组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

5. 发明申请

WO2012068066A2 OHMIC CONTACT TO SEMICONDUCTOR 审中-公开
标题翻译： OHMIC与SEMICONDUCTOR联系
公开(公告)号：WO2012068066A2
公开(公告)日：2012-05-24
申请号：PCT/US2011/060729
申请日：2011-11-15
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , GASKA, Remigijus , SHUR, Michael
发明人： GASKA, Remigijus , SHUR, Michael
IPC分类号： H01L21/28 , H01L33/00 , H01L21/328 , H01L29/86
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/417 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/40
摘要： An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
摘要翻译：提供了与包括异质结构阻挡层和邻近异质结构阻挡层的金属层的半导体层的欧姆接触。异质结构阻挡层可以在异质结构阻挡层和半导体层的异质界面处形成用于接触的二维自由载气。金属层被配置成与二维无载体气体形成接触。

6. 发明申请

WO2008022238A2 SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE 审中-公开
标题翻译：形状接触层用于发光结构
公开(公告)号：WO2008022238A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/076071
申请日：2007-08-16
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , BILENKO, Yuriy , GASKA, Remigijus , SHUR, Michael
发明人： BILENKO, Yuriy , GASKA, Remigijus , SHUR, Michael
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01S5/0425
摘要： An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.
摘要翻译：提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。使用这些形状可以为发光器件提供一个或多个改进的操作特性。接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

7. 发明申请

WO2013023197A2 EMITTING DEVICE WITH COMPOSITIONAL AND DOPING INHOMOGENEITIES IN SEMICONDUCTOR LAYERS 审中-公开
标题翻译：在半导体层中具有组成和掺杂不均匀性的发射器件
公开(公告)号：WO2013023197A2
公开(公告)日：2013-02-14
申请号：PCT/US2012/050486
申请日：2012-08-11
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SHUR, Michael , SHATALOV, Maxim, S. , DOBRINSKY, Alexander , GASKA, Remigijus , YANG, Jinwei
发明人： SHUR, Michael , SHATALOV, Maxim, S. , DOBRINSKY, Alexander , GASKA, Remigijus , YANG, Jinwei
IPC分类号： H01L33/04 , H01L33/06
CPC分类号： H01L29/15 , B82Y20/00 , H01L21/0254 , H01L33/06 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
摘要翻译：提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。该层可以包括短期超晶格，其包括与井交替的障碍物。在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

8. 发明申请

WO2011159993A2 SEEP ULTRAVIOLET LIGHT EMITTING DIODE 审中-公开
标题翻译： SEEP ULTRAVIOLET发光二极管
公开(公告)号：WO2011159993A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040850
申请日：2011-06-17
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , GASKA, Remigijus , SHATALOV, Maxim, S. , SHUR, Michael
发明人： GASKA, Remigijus , SHATALOV, Maxim, S. , SHUR, Michael
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/385 , H01L33/405
摘要： A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.
摘要翻译：提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。光产生结构包括一组量子阱。接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量生成结构。另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。二极管可以包括阻挡层，其被配置为使得阻挡层的能量与量子阱的电子基态能量之间的差异大于光生成结构的材料中的极化光学声子的能量。二极管可以包括复合触点，其包括对由光产生结构产生的光至少部分透明的粘附层和被配置为反射由光产生结构产生的光的至少一部分的反射金属层。

9. 发明申请

WO2007087592A2 LED-BASED OPTICAL PUMPING FOR LASER LIGHT GENERATION 审中-公开
标题翻译：基于LED的光学激光用于激光发生
公开(公告)号：WO2007087592A2
公开(公告)日：2007-08-02
申请号：PCT/US2007/061030
申请日：2007-01-25
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SHUR, Michael , GASKA, Remigijus
发明人： SHUR, Michael , GASKA, Remigijus
IPC分类号： H01S3/06 , H01S3/091
CPC分类号： H01S3/0933 , H01S3/094084 , H01S5/041 , H01S5/105 , H01S5/36
摘要： Laser light generating solutions are provided that use one or more light emitting diodes to optically pump a laser light generating structure. The laser light generating structure can include organic or inorganic laser material. The light emitting diodes can be located on the same substrate as the laser light generating structure or on a separate substrate that is connected to the substrate with the laser light generating structure. Various other features can be included to enhance the optical pumping and/or enable electrical pumping of the active structure when it includes an inorganic laser material.
摘要翻译：提供了使用一个或多个发光二极管来光学泵浦激光产生结构的激光产生解决方案。激光产生结构可以包括有机或无机激光材料。发光二极管可以位于与激光产生结构相同的衬底上，或者位于与激光产生结构连接到衬底的单独衬底上。当包括无机激光材料时，可以包括各种其它特征以增强光学泵浦和/或使电活动结构电泵浦。

10. 发明申请

WO2007002028A3 LAYER GROWTH USING METAL FILM AND/OR ISLANDS 审中-公开
公开(公告)号：WO2007002028A3
公开(公告)日：2007-01-04
申请号：PCT/US2006/023896
申请日：2006-06-20
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , GASKA, Remigijus , ZHANG, Jiangping , SHUR, Michael
发明人： GASKA, Remigijus , ZHANG, Jiangping , SHUR, Michael
IPC分类号： H01L21/00
摘要： A solution for manufacturing a nitride-based heterostructure, semiconductor; device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-Ill nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-Ill metal film on the surface in a substantially nitrogen-free atmosphere. The group-Ill metal film is grown such that it covers substantially an entire area of the surface. Next, the group-Ill metal film is nitridated to form a group-Ill nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-Ill nitride film. The islands can be used to subsequent group-Ill nitride growth to form the group-Ill nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.

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