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1. 发明申请

WO2008045886A3 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：保护金属器件的外延结构
公开(公告)号：WO2008045886A3
公开(公告)日：2008-06-12
申请号：PCT/US2007080836
申请日：2007-10-09
申请人： SEMI PHOTONICS CO LTD , FAN FENG-HSU , DOAN TRUNG TRI , TRAN CHUONG ANH , CHU CHEN-FU , CHENG CHAO-CHEN , CHU JIUNN-YI , LIU WEN-HUANG , CHENG HAO-CHUN , YEN JUI-KANG
发明人： FAN FENG-HSU , DOAN TRUNG TRI , TRAN CHUONG ANH , CHU CHEN-FU , CHENG CHAO-CHEN , CHU JIUNN-YI , LIU WEN-HUANG , CHENG HAO-CHUN , YEN JUI-KANG
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器器件。相应地生产的器件可以获益于比传统金属器件更高的产量和更高的性能，例如更高的发光二极管亮度和更高的导热率。此外，本发明公开了在具有原始非（或低）导热和/或非导电的金属装置的高散热率的情况下，可应用于GaN基电子装置的制造领域中的技术，（或低）导电载体衬底，已经被移除。

2. 发明申请

WO2008154526A3 METHOD TO MAKE LOW RESISTANCE CONTACT 审中-公开
标题翻译：制造低电阻接触的方法
公开(公告)号：WO2008154526A3
公开(公告)日：2010-02-18
申请号：PCT/US2008066378
申请日：2008-06-10
申请人： SEMI PHOTONICS CO LTD , CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
发明人： CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
IPC分类号： H01L23/48 , H01L33/00
CPC分类号： H01L33/0079
摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
摘要翻译：提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

3. 发明申请

WO2008154526A4 METHOD TO MAKE LOW RESISTANCE CONTACT 审中-公开
标题翻译：低电阻接触的方法
公开(公告)号：WO2008154526A4
公开(公告)日：2010-04-15
申请号：PCT/US2008066378
申请日：2008-06-10
申请人： SEMI PHOTONICS CO LTD , CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
发明人： CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
IPC分类号： H01L23/48 , H01L33/00
CPC分类号： H01L33/0079
摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
摘要翻译：提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。可以通过去除其上形成有n掺杂GaN层的衬底来暴露表面来形成n掺杂GaN层。这种表面的晶体结构可以具有与如此沉积的p掺杂GaN层的表面明显不同的配置。

4. 发明申请

WO2008083140A3 LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING 审中-公开
标题翻译：发光二极管（LED）通过粗化改善光提取
公开(公告)号：WO2008083140A3
公开(公告)日：2008-09-18
申请号：PCT/US2007088792
申请日：2007-12-26
申请人： SEMI PHOTONICS CO LTD , TRAN CHUONG ANH , DOAN TRUNG TRI , CHU CHEN-FU , CHENG HAO-CHUN , FAN FENG-HSU
发明人： TRAN CHUONG ANH , DOAN TRUNG TRI , CHU CHEN-FU , CHENG HAO-CHUN , FAN FENG-HSU
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/22 , H01L33/0095
摘要： Systems and methods are disclosed for fabricating a semiconductor light- emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
摘要翻译：公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化来提取来自第二发光二极管器件的光的制造半导体发光二极管（LED）器件的系统和方法 LED设备的内部。

5. 发明申请

WO2007117805A3 METHOD OF SEPARATING SEMICONDUCTOR DIES 审中-公开
标题翻译：分离半导体芯片的方法
公开(公告)号：WO2007117805A3
公开(公告)日：2007-12-13
申请号：PCT/US2007063589
申请日：2007-03-08
申请人： SEMILEDS CORP , CHU CHEN-FU , DOAN TRUNG TRI , CHENG HAO-CHUN , FAN FENG-HSU , WANG FU-HSIEN
发明人： CHU CHEN-FU , DOAN TRUNG TRI , CHENG HAO-CHUN , FAN FENG-HSU , WANG FU-HSIEN
IPC分类号： H01L21/301 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L33/0079 , H01L33/0095
摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.
摘要翻译：描述了在半导体制造过程中分离多个管芯的方法。在包含多个管芯的半导体晶片的上表面上，除了存在阻挡电镀材料块的地方之外，金属层被沉积在各处。停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。在阻挡层上方添加牺牲金属元素，然后除去衬底。在各个裸片之间的半导体材料被消除之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，钝化层被添加到该表面，然后去除牺牲金属元件。将胶带添加到现在暴露的阻挡层中，去除钝化层，翻转所得到的结构，并且将胶带展开以分离各个模具。

6. 发明公开

EP2087509A4 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：保护医疗器械的外延
公开(公告)号：EP2087509A4
公开(公告)日：2013-06-05
申请号：EP07844027
申请日：2007-10-09
申请人： SEMI PHOTONICS CO LTD
发明人： FAN FENG-HSU , DOAN TRUNG TRI , TRAN CHUONG ANH , CHU CHEN-FU , CHENG CHAO-CHEN , CHU JIUNN-YI , LIU WEN-HUANG , CHENG HAO-CHUN , YEN JUI-KANG
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44 , H01L33/64
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64

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