会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明专利
    • DE69734221T2
    • 2006-05-11
    • DE69734221
    • 1997-03-27
    • SEIKO INSTR INC
    • SUDA MASAYUKISAKUHARA TOSHIHIKOATAKA TATSUAKI
    • B23H3/00G01N27/416B81C99/00C25D21/12C25F3/00C25F7/00G01Q60/10G01Q70/08G01Q80/00G11B9/14
    • An electrochemical cell is constructed with the use of a four-electrode system that comprises a probe 1, material to be worked 2, reference electrode 10 and outer electrode 11. Respective potentials of the probe 1 and material to be worked 2 are set to be at potentials that cause no electrochemical reaction to occur. Then, the Z-axial position of the probe 1 is controlled so that the tunnel current that flows between the probe 1 and the material to be worked 2 may be fixed. Then, while the probe 1 is being moved along a working line, the Z-axial position of the probe 1 is stored continuously in a memory device 8 whereby storage is performed of the irregularities configuration and inclinations of the material to be worked 2. When working is performed, the electrochemical cell is reconstructed in the form of a three-electrode system that comprises the probe 1, material to be worked 2, and reference electrode 10, whereby, the probe 1 is again moved along the working line while controlling the Z-axial position of the probe 1 to be kept at the stored position or a position that has been obtained by adding thereto a certain offset. Simultaneously, a voltage is applied between the probe 1 and the material to be worked 2 to thereby perform the working operation along the working line through an electrochemical reaction.
    • 6. 发明专利
    • DE69734221D1
    • 2006-02-02
    • DE69734221
    • 1997-03-27
    • SEIKO INSTR INC
    • SUDA MASAYUKISAKUHARA TOSHIHIKOATAKA TATSUAKI
    • B23H3/00B81C99/00C25D21/12C25F3/00C25F7/00G01N27/416G01Q60/10G01Q70/08G01Q80/00G11B9/14
    • An electrochemical cell is constructed with the use of a four-electrode system that comprises a probe 1, material to be worked 2, reference electrode 10 and outer electrode 11. Respective potentials of the probe 1 and material to be worked 2 are set to be at potentials that cause no electrochemical reaction to occur. Then, the Z-axial position of the probe 1 is controlled so that the tunnel current that flows between the probe 1 and the material to be worked 2 may be fixed. Then, while the probe 1 is being moved along a working line, the Z-axial position of the probe 1 is stored continuously in a memory device 8 whereby storage is performed of the irregularities configuration and inclinations of the material to be worked 2. When working is performed, the electrochemical cell is reconstructed in the form of a three-electrode system that comprises the probe 1, material to be worked 2, and reference electrode 10, whereby, the probe 1 is again moved along the working line while controlling the Z-axial position of the probe 1 to be kept at the stored position or a position that has been obtained by adding thereto a certain offset. Simultaneously, a voltage is applied between the probe 1 and the material to be worked 2 to thereby perform the working operation along the working line through an electrochemical reaction.
    • 10. 发明专利
    • DE19529170B4
    • 2006-09-14
    • DE19529170
    • 1995-08-08
    • SEIKO INSTR INC
    • SUDA MASAYUKIANDO AKITOATAKA TATSUAKI
    • G03F1/00
    • A method of forming a mask for photolithography comprises forming a transparent conductive film on a transparent substrate. The substrate and an electrode having a sharp front end are immersed in an electrolytic solution. The sharp front end of the electrode and the transparent film are then positioned close to each other while controlling a distance therebetween. The substrate and the electrode are then scanned relative to each other in two-dimensions while maintaining the distance between the sharp front end of the electrode and the transparent film constant. Thereafter, an electrochemical reaction is processed on the substrate while a voltage is applied between the transparent film and the electrode to form a mask pattern on the substrate. During repair of the mask thus formed, the substrate and the electrode are immersed in the electrolytic solution. The sharp front end of the electrode and a portion of the mask pattern to be repaired are positioned close to one another, and a distance between the sharp front end of the electrode and the mask pattern is controlled by detecting a tunnelling current flowing therebetween. Thereafter, a voltage is applied between the electrode and the mask pattern to either deposit a pattern material onto the portion of the mask pattern to be repaired or to dissolve a pattern material from the portion of the substrate pattern to be repaired.