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1. 发明专利

DE19529170B4 未知
公开(公告)号：DE19529170B4
公开(公告)日：2006-09-14
申请号：DE19529170
申请日：1995-08-08
申请人： SEIKO INSTR INC
发明人： SUDA MASAYUKI , ANDO AKITO , ATAKA TATSUAKI
IPC分类号： G03F1/00
摘要： A method of forming a mask for photolithography comprises forming a transparent conductive film on a transparent substrate. The substrate and an electrode having a sharp front end are immersed in an electrolytic solution. The sharp front end of the electrode and the transparent film are then positioned close to each other while controlling a distance therebetween. The substrate and the electrode are then scanned relative to each other in two-dimensions while maintaining the distance between the sharp front end of the electrode and the transparent film constant. Thereafter, an electrochemical reaction is processed on the substrate while a voltage is applied between the transparent film and the electrode to form a mask pattern on the substrate. During repair of the mask thus formed, the substrate and the electrode are immersed in the electrolytic solution. The sharp front end of the electrode and a portion of the mask pattern to be repaired are positioned close to one another, and a distance between the sharp front end of the electrode and the mask pattern is controlled by detecting a tunnelling current flowing therebetween. Thereafter, a voltage is applied between the electrode and the mask pattern to either deposit a pattern material onto the portion of the mask pattern to be repaired or to dissolve a pattern material from the portion of the substrate pattern to be repaired.

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