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    • 5. 发明公开
    • MONOLITHIC RF CIRCUIT AND METHOD OF FABRICATING THE SAME
    • 单片RF电路及其制造方法
    • KR20070081321A
    • 2007-08-16
    • KR20060013216
    • 2006-02-10
    • SAMSUNG ELECTRONICS CO LTD
    • SONG IN SANGKWON SANG WOOKKIM CHUL SOOPARK YUN KWON
    • H01L27/02B81B3/00B81C1/00H01L27/20H01L41/09H01L41/22H01L41/311H03H3/02H03H9/17H03H9/54
    • H03H3/02H03H9/0542H03H9/173
    • A monolithic RF circuit and its manufacturing method are provided to improve a manufacturing yield of the monolithic RF circuit by forming a switch along with a filter. A monolithic RF circuit includes a base substrate(110), a filter unit(130), and a switching unit(140). The filter unit includes first and second support layers(131a,131b), a first air gap(AG), a first electrode, a first piezoelectric layer(133), and a second electrode(134). The filter unit passes a signal within a predetermined frequency band. The switching unit includes a third support layer(141), a second air gap(AG2), a first switch electrode(142), and a second piezoelectric layer(143). The switching unit is switched by an RF signal, which is received from outside. The first air gap is formed between the first and the second support layers. The first electrode is formed on the second support layer and the first air gap. The first piezoelectric layer is formed on the first support layer and the first electrode. The second electrode is formed on the first piezoelectric layer.
    • 提供单片RF电路及其制造方法,通过与滤波器一起形成开关来提高单片RF电路的制造成品率。 单片RF电路包括基底(110),滤光单元(130)和开关单元(140)。 过滤器单元包括第一和第二支撑层(131a,131b),第一气隙(AG),第一电极,第一压电层(133)和第二电极(134)。 滤波器单元通过预定频带内的信号。 开关单元包括第三支撑层(141),第二气隙(AG2),第一开关电极(142)和第二压电层(143)。 切换单元由从外部接收的RF信号切换。 第一气隙形成在第一和第二支撑层之间。 第一电极形成在第二支撑层和第一气隙上。 第一压电层形成在第一支撑层和第一电极上。 第二电极形成在第一压电层上。