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1. 发明授权

KR960010000B1 SEMICONDUCTOR DEVICE FABRICATION PROCESS 无效
标题翻译：半导体器件制造工艺
公开(公告)号：KR960010000B1
公开(公告)日：1996-07-25
申请号：KR920016152
申请日：1992-09-04
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM SUNG-TAE , KANG SUNG-HOON
IPC分类号： H01L27/04 , H01L27/108
摘要： The method comprises forming oxide film with a thickness of 10-40 angstrom on the 1st electrode; nitrifying pare of oxide film; forming a dielectric layer of high dielectric materials on the nitride surface; and forming a 2nd electrode on the dielectric layer.
摘要翻译：该方法包括在第一电极上形成厚度为10-40埃的氧化膜; 氧化膜硝化作用; 在氮化物表面上形成高介电材料的介电层; 以及在所述电介质层上形成第二电极。

2. 发明专利

JP2005242351A Rear projection optical system providing wide angle-of-view and high resolution 审中-公开
标题翻译：后投影光系统提供宽视角和高分辨率
公开(公告)号：JP2005242351A
公开(公告)日：2005-09-08
申请号：JP2005042708
申请日：2005-02-18
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUNG-TAE
IPC分类号： G02B13/00 , G02B13/04 , G02B13/16 , G02B13/18 , G02F1/1335 , G03B21/10 , G03B21/14
CPC分类号： G02B13/04 , G02B13/16
摘要： PROBLEM TO BE SOLVED: To provide a rear projection lens, realizing high resolution such that the unit cell of an image forming panel can be separated and realizing a wide angle-of-view to possess a small projection distance. SOLUTION: The rear projection optical system, for enlarging an image formed on the image forming panel and projecting it to the back of a screen, includes a front lens group arranged on the screen side and constituted of 1st to 3rd lenses each having negative refractive power and a 4th lens and a 5th lens, each having positive refractive power; a rear lens group arranged on the panel side and constituted of a 6th lens having positive refractive power and a 7th lens having negative refractive power which constitute a 1st bonding lens; an 8th lens having negative refractive power and a 9th lens having positive refractive power which constitute a 2nd bonding lens; and a 10th lens having negative refractive power, and a diaphragm arranged between the front lens group and the group lens rear for adjusting the light quantity. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种后投影透镜，实现高分辨率，使得图像形成面板的单元可以被分离并实现具有小的投影距离的广角。解决方案：用于放大形成在图像形成面板上并且将其投影到屏幕背面的图像的后投影光学系统包括布置在屏幕侧并由第1至第3透镜构成的前透镜组，每个具有负折射力和第四透镜和第五透镜，每个具有正的折射光焦度; 布置在面板侧并由构成第一粘合透镜的具有正折光力的第六透镜和具有负折光力的第七透镜构成的后透镜组; 构成第二粘合透镜的具有负屈光力的第八透镜和具有正屈光力的第九透镜; 和具有负屈光力的第十透镜，以及布置在前透镜组和组透镜后部之间用于调节光量的光阑。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2006228718A Optical tunnel and projection apparatus including the same 审中-公开
标题翻译：光学隧道和投影装置，包括它们
公开(公告)号：JP2006228718A
公开(公告)日：2006-08-31
申请号：JP2006013903
申请日：2006-01-23
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM JIN-SIK , KIM SUNG-TAE , NHO JEONG-HO , JEON KEE-UK
IPC分类号： F21V8/00 , F21S2/00 , F21V11/00 , F21V14/00 , F21Y101/00 , G02B5/02 , G02B27/09 , G02F1/13 , G03B21/14 , H04N5/74
CPC分类号： G02B27/0927 , G02B27/0994 , G03B21/10 , G03B21/208 , H04N9/3114 , H04N9/315 , H04N9/3152
摘要： PROBLEM TO BE SOLVED: To provide an optical tunnel and a projection apparatus that includes the same for improving a brightness ratio leading to improvement of the degree of light separation and to size reduction of an optical system.
SOLUTION: An optical tunnel and a projection apparatus including the same for improving crystal performance, and a light separation degree of illumination light are provided. The optical tunnel uniformizing the intensity distribution of the light, supplied form a light source, has a light-incident surface to which the light is made incident and a light-emitting surface from which the incident light is emitted, the area of the light-emitting surface is larger than that of the light-incident surface, and the light-emitting surface is inclined to the light-incident surface by a fixed angle (θ). Accordingly, the crystal performance of the illumination light is improved, and the light separation degree is also improved.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种光隧道和投影装置，其包括其，以提高亮度比，从而提高光分离的程度和减小光学系统的尺寸。解决方案：提供一种包括其的用于提高晶体性能的光学隧道和投影设备以及照明光的分光度。将从光源提供的光的强度分布均匀化的光学隧道具有入射光的入射面和发射入射光的发光面，发光面比光入射面大，发光面以入射面倾斜固定角度（θ）。因此，提高了照明光的晶体性能，并且还提高了光分离度。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006217567A Communication equipment using command line interface agent and management method thereof 审中-公开
标题翻译：使用命令行接口代理的通信设备及其管理方法
公开(公告)号：JP2006217567A
公开(公告)日：2006-08-17
申请号：JP2005348592
申请日：2005-12-02
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUNG-TAE , CHA JEONG-HO , PARK TAISEI
IPC分类号： H04L12/70
CPC分类号： H04L41/00
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for managing communication equipment using a CLI interface. SOLUTION: The communication equipment is managed by a management device and has a management file storage part which receives and stores management information defined by the management device which manages the communication equipment and a command line interface agent which analyzes the management information from the management file storage part when the communication equipment is started, determines whether or not there is a piece of newly registered information in the analyzed management information, stores the newly registered information based on a determination result and allocates a socket port for a newly registered software module and IPC. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用CLI接口管理通信设备的设备和方法。解决方案：通信设备由管理设备管理，并具有管理文件存储部分，其管理由管理通信设备的管理设备定义的管理信息，以及命令行接口代理，该管理信息从管理文件存储部分，当通信设备启动时，确定在分析的管理信息中是否存在新登记的信息，根据确定结果存储新登记的信息，并为新注册的软件模块分配插座端口和IPC。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

DE60209841T2 未知
公开(公告)号：DE60209841T2
公开(公告)日：2006-08-17
申请号：DE60209841
申请日：2002-09-11
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HWANG SEONG-TAEK , SONG KWAN-WOONG , KIM SUNG-TAE , JOO YOUNG-HOON , PARK SUNG-JIN
IPC分类号： H01S3/067 , H04B10/2507 , G02B6/00 , H01S3/00 , H01S3/094 , H04B10/2525 , H04B10/29 , H04B10/291 , H04J14/00 , H04J14/02
摘要： Disclosed is a dispersion-compensated optical-fiber amplifier including a circulator for outputting an optical signal received at a first terminal connected to an optical fiber to a second terminal, while outputting an optical signal received at the second terminal to a third terminal connected to the optical fiber; a first amplifier for amplifying the optical signal from the second terminal and an optical signal reapplied thereto by utilizing an induced emission of pumped-excited ions; a dispersion-compensating fiber for compensating for a dispersion occurring in the optical signal received from the first amplifier and an optical signal reapplied thereto; a second amplifier for amplifying the optical signal from the dispersion-compensating fiber and an optical signal reapplied thereto by utilizing an induced emission of pumped-excited ions; a splitter installed on the dispersion-compensating fiber and adapted to output to the dispersion-compensating fiber, an optical signal applied thereto and an optical signal reapplied thereto, while outputting a pumping light applied to one end thereof and adapted to pump both the first and second amplifiers to the other end thereof without allowing the pumping light to pass through the dispersion-compensating fiber; and, a reflector for reflecting back an optical signal from the second amplifier, so that the reflected optical signal is reapplied to the second amplifier, the splitter, the first amplifier, and the circulator, in this order.

6. 发明专利

DE10045019B4 未知
公开(公告)号：DE10045019B4
公开(公告)日：2006-11-02
申请号：DE10045019
申请日：2000-09-12
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM MIN , KIM SUNG-TAE
IPC分类号： H01L21/8234 , H01L21/28 , H01L21/8247 , H01L27/115

7. 发明专利

DE60209841D1 未知
公开(公告)号：DE60209841D1
公开(公告)日：2006-05-11
申请号：DE60209841
申请日：2002-09-11
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HWANG SEONG-TAEK , SONG KWAN-WOONG , KIM SUNG-TAE , JOO YOUNG-HOON , PARK SUNG-JIN
IPC分类号： H01S3/067 , H04B10/2507 , G02B6/00 , H01S3/00 , H01S3/094 , H04B10/2525 , H04B10/29 , H04B10/291 , H04J14/00 , H04J14/02
摘要： Disclosed is a dispersion-compensated optical-fiber amplifier including a circulator for outputting an optical signal received at a first terminal connected to an optical fiber to a second terminal, while outputting an optical signal received at the second terminal to a third terminal connected to the optical fiber; a first amplifier for amplifying the optical signal from the second terminal and an optical signal reapplied thereto by utilizing an induced emission of pumped-excited ions; a dispersion-compensating fiber for compensating for a dispersion occurring in the optical signal received from the first amplifier and an optical signal reapplied thereto; a second amplifier for amplifying the optical signal from the dispersion-compensating fiber and an optical signal reapplied thereto by utilizing an induced emission of pumped-excited ions; a splitter installed on the dispersion-compensating fiber and adapted to output to the dispersion-compensating fiber, an optical signal applied thereto and an optical signal reapplied thereto, while outputting a pumping light applied to one end thereof and adapted to pump both the first and second amplifiers to the other end thereof without allowing the pumping light to pass through the dispersion-compensating fiber; and, a reflector for reflecting back an optical signal from the second amplifier, so that the reflected optical signal is reapplied to the second amplifier, the splitter, the first amplifier, and the circulator, in this order.

8. 发明专利

GB2347787A Method of forming a tantalum oxide containing capacitor 未知
公开(公告)号：GB2347787A
公开(公告)日：2000-09-13
申请号：GB9826790
申请日：1998-12-04
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM SUNG-TAE , KIM KYUNG-HOON , JANG WON-JUN , KIM DO-HYUNG
IPC分类号： H01L21/02 , H01L21/316 , H01L21/3205
摘要： A method of forming a tantalum oxide containing capacitor which improves the Ta 2 O 5 film's properties, and includes providing a plasma silicon nitride film having a thickness of 20 100 angstroms, sufficient to prevent oxidation of a lower capacitor electrode, by a plasma nitridation process using a reactant gas during the step of preprocessing the surface of the lower capacitor electrode. The plasma silicon nitride film is formed by nitrifying a surface portion of the lower capacitor electrode by means of excitation of a reactant gas with a plasma. The plasma nitridation process is effective to form a sufficiently thick silicon nitride film on the lower capacitor electrode and anneal the resulting substrate in the same process chamber. Also, the method is applicable to a more simplified annealing mechanism, providing cost savings in the manufacture of DRAM devices, in the form of an ozone annealing process using thermal energy of more than about 400{C. In the ozone annealing process, the thermal energy is generated by heating a susceptor where wafers are placed.

9. 发明专利

NL1012544A1 未知
公开(公告)号：NL1012544A1
公开(公告)日：2000-02-29
申请号：NL1012544
申请日：1999-07-08
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM SUNG-TAE , KIM KYUNG-HOON
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242
摘要： The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.

10. 发明专利

DE19929605B4 未知
公开(公告)号：DE19929605B4
公开(公告)日：2006-08-10
申请号：DE19929605
申请日：1999-06-28
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM SUNG-TAE , KIM KYUNG-HOON
IPC分类号： H01L21/8242 , H01L27/108 , H01L21/02
摘要： The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.

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