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1. 发明专利

JP2008129574A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2008129574A
公开(公告)日：2008-06-05
申请号：JP2007143963
申请日：2007-05-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK KEUN-WOO , BUN KOKUTETSU , CHOI PIL-MO , KIM CHUL-HO , MAENG HO-SUK , LEE SANG HOON , KIM KYUNG-HOON
IPC分类号： G09G3/36 , G02F1/133 , G02F1/1333 , G06F3/041 , G09F9/00 , G09G3/20 , G09G3/30 , H01L51/50
CPC分类号： G06F3/042 , G02F1/13338 , G02F2001/13312 , G06F3/0412
摘要： PROBLEM TO BE SOLVED: To provide a display device which is high in accuracy and gives a good feeling of touch.
SOLUTION: The display device includes a touch panel 100 which outputs a predetermined enable signal in response to external pressure, a display panel 200 including an optical sensing unit 700 which responds to external light to generate a predetermined electric signal having information on the position where the light is provided, and a panel driver 600 which forms an image corresponding to the electric signal on the display panel when the enable signal is input.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种精度高并且具有良好触摸感的显示装置。
解决方案：显示装置包括响应于外部压力输出预定使能信号的触摸面板100，显示面板200包括响应于外部光的光学感测单元700，以产生具有关于外部信号的信息的预定电信号设置光的位置，以及面板驱动器600，当输入使能信号时，面板驱动器600形成与显示面板上的电信号对应的图像。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007053356A Manufacturing method of tft substrate and tft manufactured by it 有权
标题翻译： TFT基板的制造方法及其制造的TFT
公开(公告)号：JP2007053356A
公开(公告)日：2007-03-01
申请号：JP2006209726
申请日：2006-08-01
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM IL-GON , PARK TAE-HYUNG , BUN KOKUTETSU , KIM CHUL-HO , KIM KYUNG-HOON , KIM SU-KYOUNG
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66757
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of TFT substrate excellent in process efficiency, and the TFT manufactured by it. SOLUTION: The method comprises the stages of: providing a substrate having semiconductor layer which includes low concentration doping region adjacent to each both sides of channel region, and each source/drain regions adjacent to the low concentration region; and, after forming gate insulating film and conductive film on the substrate in order, forming a gate electrode by patterning the above-mentioned conductive film. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种工艺效率优异的TFT基板及其制造的TFT的制造方法。解决方案：该方法包括以下步骤：提供具有半导体层的衬底，该衬底包括与沟道区域的每个两侧相邻的低浓度掺杂区域和与低浓度区域相邻的每个源极/漏极区域; 并且在依次在基板上形成栅绝缘膜和导电膜之后，通过图案化上述导电膜形成栅电极。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006148926A Trimming apparatus and method for digital camera 有权
标题翻译：数字摄像机的调整装置和方法
公开(公告)号：JP2006148926A
公开(公告)日：2006-06-08
申请号：JP2005336168
申请日：2005-11-21
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM KYUNG-HOON , KIM DU-IL
IPC分类号： H04N5/225 , H04N101/00
CPC分类号： H04N1/3875
摘要： PROBLEM TO BE SOLVED: To provide a trimming apparatus and method for a digital camera. SOLUTION: A trimming apparatus in a digital camera having an external window includes: (a) a black bar determiner which determines a size of a black bar used to cover a part of the external window based on ratio information of a printing paper received from a printer; (b) a picture changing unit which changes the size or position of a picture, or combination of both the size and the position of the picture, based on a user input signal to create a display picture to be displayed on the external window; and (c) a coordinate determiner which determines coordinates of the display picture based on the display picture and the size of the black bar. Thus, it is possible to fix an external window and move a picture, thereby to provide a user with a further intuitive way to select a trimming picture. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于数码相机的修剪装置和方法。解决方案：具有外部窗口的数码相机中的修剪装置包括：（a）黑条确定器，其基于打印纸的比例信息确定用于覆盖外部窗口的一部分的黑条的尺寸从打印机接收; （b）图像改变单元，其基于用户输入信号改变图像的尺寸或位置，或图像的大小和位置的组合，以创建要在外部窗口上显示的显示图像; 以及（c）基于显示图像和黑条的大小来确定显示图像的坐标的坐标确定器。因此，可以固定外部窗口并移动图片，从而为用户提供进一步直观的选择修剪图片的方式。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2008122904A Thin film transistor substrate, method for manufacturing the same, and liquid crystal display device equipped with the same 有权
标题翻译：薄膜晶体管基板，其制造方法以及配备其的液晶显示装置
公开(公告)号：JP2008122904A
公开(公告)日：2008-05-29
申请号：JP2007103001
申请日：2007-04-10
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM CHUL-HO , BUN KOKUTETSU , KIM JAE-HYUN , MAENG HO-SUK , LEE SANG HOON , KIM KYUNG-HOON , PARK KEUN-WOO
IPC分类号： G02F1/1335 , G02F1/1368
CPC分类号： G02F1/134309 , G02F1/133555 , G02F1/136213 , G02F1/1393 , G02F2001/134345 , H01L27/1214
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor substrate having an enhanced aperture ratio, and to provide a method for manufacturing the substrate and a liquid crystal display device having the substrate. SOLUTION: The thin film transistor substrate includes a plurality of gate lines 120 formed extending in one direction on a substrate, a plurality of data lines 140 formed as intersecting the gate lines, and a plurality of pixel electrodes 150 formed in pixel regions A located between the data lines, wherein each pixel region has a reflection region B formed in a region including the gate line and transmission regions C1, C2 formed in both sides interposing the reflection region. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有增加的开口率的薄膜晶体管基板，并提供一种用于制造基板的方法和具有该基板的液晶显示装置。解决方案：薄膜晶体管基板包括在基板上沿一个方向延伸形成的多条栅极线120，与栅极线相交形成的多条数据线140以及形成在像素区域中的多个像素电极150 A位于数据线之间，其中每个像素区域具有形成在包括栅极线的区域中的反射区域B和形成在插入反射区域的两侧的透射区域C1，C2。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2008129611A Display panel 有权
标题翻译：显示面板
公开(公告)号：JP2008129611A
公开(公告)日：2008-06-05
申请号：JP2007304272
申请日：2007-11-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM CHUL-HO , BUN KOKUTETSU , CHOI PIL-MO , MAENG HO-SUK , LEE SANG HOON , KIM KYUNG-HOON , PARK KEUN-WOO
IPC分类号： G02F1/1368 , G02F1/1343 , G09F9/30
CPC分类号： G02F1/134336 , G02F1/136213 , G02F2001/134345 , H01L27/12 , H01L27/124
摘要： PROBLEM TO BE SOLVED: To provide a highly luminous display panel wherein a reduction in aperture ratio is minimized while light leakage of the display panel is prevented and a flicker defect caused by a kickback voltage is not generated. SOLUTION: In the display panel having a thin film transistor plate and a common electrode display plate, the thin film transistor display plate includes gate lines formed on a substrate, storage electrode lines formed on the substrate and being parallel to the gate lines, data lines insulated from the gate lines and crossing the gate lines, a plurality of thin film transistors (TFTs) connected with the gate lines and the data lines, and pixel electrodes having a first sub-electrode connected with a TFT and a second sub-electrode formed at a side opposite the first sub-electrode with respect to a gate line, and the TFT and a gate line are disposed between the first and second sub-electrodes. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种高度发光的显示面板，其中防止显示面板的漏光而开口率的降低最小化，并且不产生由反冲电压引起的闪烁缺陷。解决方案：在具有薄膜晶体管板和公共电极显示板的显示面板中，薄膜晶体管显示板包括形成在基板上的栅极线，形成在基板上并与栅极线平行的存储电极线，与栅极线绝缘并与栅极线交叉的数据线，与栅极线和数据线连接的多个薄膜晶体管（TFT），以及具有与TFT连接的第一子电极和第二子像素的像素电极 - 电极，其相对于栅极线形成在与第一子电极相对的一侧，并且TFT和栅极线设置在第一和第二子电极之间。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007047785A Level shifter and display device having the same 审中-公开
标题翻译：水平移位器和显示装置
公开(公告)号：JP2007047785A
公开(公告)日：2007-02-22
申请号：JP2006213593
申请日：2006-08-04
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK TAE-HYUNG , BUN KOKUTETSU , KIM IL-GON , KIM CHUL-HO , MAENG HO-SUK , KIM KYUNG-HOON
IPC分类号： G09G3/36 , G02F1/133 , G09G3/20
CPC分类号： H03K3/356165
摘要： PROBLEM TO BE SOLVED: To provide a level shifter having a single input terminal for driving a liquid crystal panel with low electric power consumption and a display device having the same.
SOLUTION: The level shifter has a first transistor including a gate electrode connected to a first power supply voltage and a source electrode receiving the supply of an input signal through an input terminal; a second transistor including a drain electrode connected to the first power supply voltage through a first node, and connected to the drain electrode of the first transistor; a third transistor including a source electrode connected to a second power supply voltage, a drain electrode connected to the gate electrode of the second transistor through a second node and a gate electrode receiving the supply of the input signal through an input terminal; a fourth transistor including a source electrode connected to the first power supply voltage, a gate electrode connected to the drain electrode of the first transistor through a first node and a source electrode connected to the drain electrode of the third transistor through the second node; and an inverter inverting the signal of the second node and outputting the same through an output terminal.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种电平移位器，具有用于驱动具有低功耗的液晶面板的单个输入端子和具有该电平移位器的显示装置。解决方案：电平移位器具有第一晶体管，其包括连接到第一电源电压的栅极电极和通过输入端子接收输入信号的源极的源极电极; 第二晶体管，包括通过第一节点连接到第一电源电压并连接到第一晶体管的漏电极的漏电极; 第三晶体管，包括连接到第二电源电压的源电极，通过第二节点连接到第二晶体管的栅电极的漏极和通过输入端接收输入信号的栅电极; 第四晶体管，包括连接到第一电源电压的源电极，通过第一节点连接到第一晶体管的漏电极的栅电极和通过第二节点连接到第三晶体管的漏电极的源电极; 以及逆变器，反相第二节点的信号并通过输出端输出。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007004160A Array substrate and display device having the same 审中-公开
标题翻译：阵列基板和显示装置
公开(公告)号：JP2007004160A
公开(公告)日：2007-01-11
申请号：JP2006166861
申请日：2006-06-16
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM KYUNG-HOON , KIM IL-GON , MOON KOOK-CHUL , PARK TAE-HYUNG , KIM CHUL-HO , PARK GYUNG-SOON
IPC分类号： G02F1/1345 , G02F1/1368
CPC分类号： G02F1/136204 , G02F2001/13456 , G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2330/04
摘要： PROBLEM TO BE SOLVED: To provide an array substrate that is protected from static electricity and a display device equipped with the same. SOLUTION: A display device is equipped with a gate circuit part that outputs gate signals to the gate lines, first signal wiring formed adjacent to the gate circuit part to transmit a starting signal that initiates driving of the gate circuit part, second signal wiring formed at the side of the first signal wiring to transmit a control signal which controls the output of the gate circuit part, and first connection wiring which electrically connects the gate circuit part and the second signal wiring and intersects the first signal wiring. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供防止静电的阵列基板和配备该阵列基板的显示装置。解决方案：显示装置配备有向栅极线输出栅极信号的栅极电路部分，与栅极电路部分相邻形成的第一信号布线，以传输启动栅极电路部分的驱动的起始信号，第二信号形成在第一信号布线一侧的布线，以传输控制门电路部分的输出的控制信号;以及第一连接布线，其将栅极电路部分和第二信号布线电连接并与第一信号布线相交。版权所有（C）2007，JPO＆INPIT

8. 发明专利

DE69621684D1 未知
公开(公告)号：DE69621684D1
公开(公告)日：2002-07-18
申请号：DE69621684
申请日：1996-03-22
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM KYUNG-HOON , PARK YOUNG-WOOK , YOO CHA-YOUNG
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： A capacitor of a highly integrated semiconductor device and a manufacturing method therefor are provided. In the highly integrated semiconductor device, an HSG polysilicon layer pattern (46a) is formed having a multitude of hemispherical grains (50a) (HSG) on the top and side surfaces of the storage electrode. Electrode separation is performed by selectively removing a silicide layer (52) that has been formed of a sacrificial metal layer (38) after the HSG step. The HSG polysilicon layer pattern does not have to be etched so that HSG polysilicon layer pattern (50a) on the top and side surfaces of conductive layer pattern (46a) remains intact.

9. 发明专利

DE19636288B4 未知
公开(公告)号：DE19636288B4
公开(公告)日：2004-02-12
申请号：DE19636288
申请日：1996-09-06
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： YI WHI-KUN , MOON DAI-SIK , KIM SUNG-KYEONG , KIM KYUNG-HOON
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213
摘要： A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.

10. 发明专利

GB2341725B Method for fabricating a capacitor utilizing hemispherical grain silicon 未知
公开(公告)号：GB2341725B
公开(公告)日：2003-07-23
申请号：GB9909306
申请日：1999-04-22
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM KYUNG-HOON , KIM SUNG-TAE
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242 , H01L21/3205
摘要： The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.

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