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JP2014093530A Semiconductor storage element 有权
标题翻译：半导体存储元件
公开(公告)号：JP2014093530A
公开(公告)日：2014-05-19
申请号：JP2013228224
申请日：2013-11-01
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE JAE-KYU , KIM CHANGKYU
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C5/063 , G11C7/18 , G11C13/0002 , G11C2213/82 , H01L27/0207 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage element capable of reducing power consumption.SOLUTION: The semiconductor storage element includes unit cells which are two-dimensionally arrayed along rows and columns in one cell array block. The unit cells are divided into a plurality of cell sub-blocks and each cell sub-group can include unit cells configuring a plurality of rows. Each unit cell includes a selection element and an information storage part. Each word line is connected to gate electrodes of the selection elements of the unit cells configuring each column. Each bit line is connected to the information storage parts of the unit cells configuring a row. Each source line is electrically connected to source terminals of the selection elements of the unit cells in each cell sub-group. The source lines and bit lines are parallel with each other. An interval between a source line and a bit line adjacent to the source line is the same as an interval between adjacent bit lines.
摘要翻译：要解决的问题：提供能够降低功耗的半导体存储元件。解决方案：半导体存储元件包括在一个单元阵列块中沿着行和列二维排列的单位单元。单元单元被分成多个单元子块，并且每个单元子组可以包括构成多行的单元单元。每个单位单元包括选择元素和信息存储部分。每个字线连接到配置每列的单元电池的选择元件的栅电极。每个位线连接到配置一行的单位单元的信息存储部分。每个源极线电连接到每个电池子组中的单位电池的选择元件的源极端子。源极线和位线彼此平行。源极线和与源极线相邻的位线之间的间隔与相邻位线之间的间隔相同。

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