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1. 发明公开

KR20070107336A METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：KR20070107336A
公开(公告)日：2007-11-07
申请号：KR20060039679
申请日：2006-05-02
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： PARK JIN HO , NAM BYEONG YUN , NAM JEONG LIM , JANG SOO LK , LEE SI HYUNG , LEE SANG HYEOP , LEE JOON JAE , KIM CHAN WON , KANG PIL KYU , JEON KYUNG YUB , KIM MI JIN
IPC分类号： H01L21/336
摘要： A method for manufacturing a semiconductor device is provided to restrict increase of electric potential within active pins which do not relate electrically by an electric field generated by gate patterns. A plurality of active pins(115a) arranged into two dimension are formed on a substrate, having a extended length toward a first direction(x). An isolation layer(120) filling a gap between the active pins are formed. Trenches having a line shape is formed to expose sidewalls of the active pins adjacent to active pins parallel to the first direction by etching partially the isolation layer, at this time protrusion parts are formed between the active pins according to the first direction. Gate patterns are formed to fill the trenches with a predetermined interval, cross the top portion of the protrusion parts and the active pins toward a second direction.
摘要翻译：提供一种制造半导体器件的方法，以限制由栅极图案产生的电场而不与电气相关的有源引脚内的电位增加。在基板上形成多个排列成二维的活动销（115a），其长度朝向第一方向（x）延伸。形成填充有源销之间的间隙的隔离层（120）。形成具有线状的沟槽形成为通过部分地蚀刻隔离层而露出与主动销相邻的活动销的侧壁平行于第一方向，此时根据第一方向在活动销之间形成突出部分。形成栅极图形以以预定间隔填充沟槽，跨越突出部分的顶部部分和活动销向第二方向。

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