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1. 发明申请

WO2009007003A1 METHOD FOR RECYCLING A SUBSTRATE, LAMINATED WATER FABRICATING METHOD AND SUITABLE RECYCLED DONOR SUBSTRATE 审中-公开
标题翻译：用于回收衬底的方法，层压水制造方法和适用的再循环衬底
公开(公告)号：WO2009007003A1
公开(公告)日：2009-01-15
申请号：PCT/EP2008/005107
申请日：2008-06-24
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , AULNETTE, Cécile , RADOUANE, Khalid
发明人： AULNETTE, Cécile , RADOUANE, Khalid
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02032
摘要： The invention relates to a method for recycling a substrate with a step-like residue in a first region of its surface, in particular along the edge of the substrate, which protrudes with respect to the surface of a remaining second region of the substrate, and wherein the first region comprises a modified zone, in particular an ion implanted zone, essentially in a plane corresponding to the plane of the surface of the remaining second region of the substrate and/or chamfered towards the edge of the substrate. To prevent the negative impact of contaminants in subsequent laminated wafer fabricating processes, the recycling method comprises a material removal step which is carried out such that the surface of the substrate in the first region is lying lower than the level of the modified zone before the material removal. The invention also relates to a laminated wafer fabricating method using the recycled substrate and to a recycled substrate in which the surface of a first region lies lower than the surface of the second region.
摘要翻译：本发明涉及一种用于在其表面的第一区域，特别是沿着衬底的边缘相对于衬底的剩余第二区域的表面突出的阶梯状残留物再循环衬底的方法，以及其中所述第一区域包括改性区域，特别是离子注入区域，基本上在与衬底的剩余第二区域的表面的平面相对应的平面中和/或朝向衬底的边缘倒角。为了防止随后的层压晶片制造工艺中的污染物的负面影响，回收方法包括材料去除步骤，其执行为使得第一区域中的基板的表面低于材料之前的改质区域的水平去除。本发明还涉及使用再循环基板和第一区域的表面低于第二区域的表面的再循环基板的层压晶片制造方法。

2. 发明申请

WO2008135804A1 IMPROVED PROCESS FOR PREPARING CLEANED SURFACES OF STRAINED SILICON. 审中-公开
标题翻译：用于制备应变硅的清洁表面的改进方法。
公开(公告)号：WO2008135804A1
公开(公告)日：2008-11-13
申请号：PCT/IB2007/002570
申请日：2007-05-03
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , RADOUANE, Khalid , BALDARO, Alessandro
发明人： RADOUANE, Khalid , BALDARO, Alessandro
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/31105 , H01L21/02052
摘要： The present invention relates to a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon (sSi) in contact with the SiGe layer, the sSi layer being exposed by etching of the SiGe layer, the method comprising the steps of: (a) a first selective etch of the SiGe layer, optionally followed by an oxidative cleaning step; (b) a rinsing step using deionized water; (c) drying; and (d) a second selective etch step. The present invention relates to a wafer comprising at least one surface layer of strained silicon (sSi), said surface layer of sSi having a thickness of at least 5 nanometres and at most 100 μm of at most 200 defects per wafer.
摘要翻译：本发明涉及一种处理晶片的方法，其包括至少一个硅锗表面层（SiGe）和与SiGe层接触的应变硅（sSi）层，通过蚀刻SiGe层来暴露sSi层该方法包括以下步骤：（a）SiGe层的第一选择性蚀刻，任选地随后进行氧化清洗步骤; （b）使用去离子水的漂洗步骤; （c）干燥; 和（d）第二选择性蚀刻步骤。本发明涉及包含至少一个应变硅表面层（sSi）的晶片，所述SSi表面层的厚度至少为5纳米，最多为100微米，每个晶片最多为200个缺陷。

3. 发明申请

WO2009150503A1 METHOD FOR PREPARING HYDROPHOBIC SURFACES 审中-公开
标题翻译：制备疏水表面的方法
公开(公告)号：WO2009150503A1
公开(公告)日：2009-12-17
申请号：PCT/IB2009/005791
申请日：2009-05-28
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PECLARD, Nicolas , RADOUANE, Khalid , GAUDIN, Gweltaz , RADU, Ionut , KERDILES, Sébastien
发明人： PECLARD, Nicolas , RADOUANE, Khalid , GAUDIN, Gweltaz , RADU, Ionut , KERDILES, Sébastien
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/02046 , H01L21/76254
摘要： The invention relates to a method for preparing hydrophobic surfaces which find their application in direct silicon bonding and strained material layer growth. The method comprises providing a substrate and subjecting the substrate to a mixed plasma treatment, wherein the mixed plasma comprises a reducing gas plasma, in particular H2, and an inert gas plasma, in particular Ar and/or He.
摘要翻译：本发明涉及一种用于制备疏水性表面的方法，其可用于直接硅键合和应变材料层生长。该方法包括提供衬底并对衬底进行混合等离子体处理，其中混合等离子体包括还原气体等离子体，特别是H2，以及惰性气体等离子体，特别是Ar和/或He。

4. 发明公开

EP2143135A1 IMPROVED PROCESS FOR PREPARING CLEANED SURFACES OF STRAINED SILICON 审中-公开
标题翻译：生产纯化改进方法SURFACES应变硅
公开(公告)号：EP2143135A1
公开(公告)日：2010-01-13
申请号：EP07804888.1
申请日：2007-05-03
申请人： S.O.I. TEC Silicon on Insulator Technologies
发明人： RADOUANE, Khalid , BALDARO, Alessandro
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/31105 , H01L21/02052
摘要： The present invention relates to a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon (sSi) in contact with the SiGe layer, the sSi layer being exposed by etching of the SiGe layer, the method comprising the steps of: (a) a first selective etch of the SiGe layer, optionally followed by an oxidative cleaning step; (b) a rinsing step using deionized water; (c) drying; and (d) a second selective etch step. The present invention relates to a wafer comprising at least one surface layer of strained silicon (sSi), said surface layer of sSi having a thickness of at least 5 nanometres and at most 100 μm of at most 200 defects per wafer.

5. 发明申请

WO2009086983A9 REDUCTION OF WATERMARKS IN HF TREATMENTS OF SEMICONDUCTING SUBSTRATES 审中-公开
公开(公告)号：WO2009086983A9
公开(公告)日：2009-07-16
申请号：PCT/EP2008/065771
申请日：2008-11-18
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , RADOUANE, Khalid
发明人： RADOUANE, Khalid
IPC分类号： H01L21/02 , H01L21/306
摘要： The present invention relates to processes of cleaning and preparing hydrophobic surfaces of semiconductor substrates, wherein the said semiconductor substrates are suitable for use as base substrates for epitaxial growth. In the context of cleaning the substrate with an aqueous solution containing hydrofluoric acid (HF), a strong acid with a pKa of less than 3 may be used in combination with the HF and/or rinsing whilst applying megasonic waves may be performed. The processes according to the invention allow hydrophobic surfaces to be prepared showing reduced levels of watermarks.

6. 发明申请

WO2010122023A2 METHOD TO THIN A SILICON-ON-INSULATOR SUBSTRATE 审中-公开
标题翻译：稀土绝缘子基板的方法
公开(公告)号：WO2010122023A2
公开(公告)日：2010-10-28
申请号：PCT/EP2010/055198
申请日：2010-04-20
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , REYNAUD, Patrick , ECARNOT, Ludovic , RADOUANE, Khalid
发明人： REYNAUD, Patrick , ECARNOT, Ludovic , RADOUANE, Khalid
IPC分类号： H01L21/306 , H01L21/762 , H01L21/18
CPC分类号： H01L21/30604 , H01L21/76254
摘要： The invention concerns a method to thin an initial silicon-on-insulator SOI substrate, comprising a layer (3) of silicon oxide SiO 2 buried between a silicon carrier substrate (2) and a silicon surface layer. This method is noteworthy in that it comprises the following successive steps consisting of conducting: -thermal oxidation treatment of said initial substrate, to oxidize part of said silicon surface layer, -a first, then a second cycle of etching and cleaning, the first cycle etching being performed so as fully to remove the formed thermal oxide and to lift off all the unstable parts of the edge of said initial substrate, the second cycle etch being conducted to remove from the surface of said thinned substrate the formed polluting particles (5) deposited thereupon, so as to obtain a final SOI substrate(1') whose thinned surface layer (4') forms an active layer.
摘要翻译：本发明涉及一种薄化初始绝缘体上硅SOI衬底的方法，其包括：在硅载体衬底（2）和硅表面层之间掩埋的氧化硅SiO 2层（3）。该方法值得注意的是，它包括以下连续步骤，其包括进行： - 对所述初始衬底进行热氧化处理，以氧化所述硅表面层的一部分，首先，然后进行第二循环的蚀刻和清洁，第一循环执行蚀刻以完全去除所形成的热氧化物并剥离所述初始衬底的边缘的所有不稳定部分，进行第二循环蚀刻以从所述减薄衬底的表面去除形成的污染颗粒（5）沉积在其上，以便获得其变薄的表面层（4'）形成活性层的最终SOI衬底（1'）。

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