会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Predictive read channel configuration
    • 预测读通道配置
    • US08248856B2
    • 2012-08-21
    • US12908295
    • 2010-10-20
    • Ryan James GossKevin Gomez
    • Ryan James GossKevin Gomez
    • G11C11/34
    • G11C7/14G11C7/04G11C11/5642G11C16/26G11C16/3418G11C16/349G11C2211/5634
    • The read channel of a solid state non-volatile memory may be configured to compensate for shifts in the threshold voltages of memory cells of the memory. A log of write time information and write temperature information from one or more write operations is stored in a data unit header. The read channel configuration, which may include reference voltages used for the read operation, is determined using the write time information and the write temperature information. Memory cells of the data unit are read using the configured read channel. A historical profile spanning multiple write operations may also be developed and used to configure the read channel.
    • 固态非易失性存储器的读通道可以被配置为补偿存储器的存储器单元的阈值电压的偏移。 来自一个或多个写入操作的写入时间信息和写入温度信息的日志被存储在数据单元头中。 可以使用写入时间信息和写入温度信息确定读取通道配置,其可以包括用于读取操作的参考电压。 使用配置的读通道读取数据单元的存储单元。 跨越多个写入操作的历史配置文件也可以被开发并用于配置读取通道。